• Er pretanjan Submitted By

sir
Submitted Manish kumar
to
RM6901

Reg 10906909

Btech Ece

2nd sem
 Contents

History

what is schotty diode

construction

revere recovery time

application

Limitationshotty diode circuits

diode configurations and packing

conclusion

Designation
 History

Schottky diode

In 1938 Walter Schottky, the son of German

mathematician Friedrich Schottky, explained the
manner in which a junction comprised of specific
combinations of metals and a doped
semiconductor material can rectify. The Schottky
diode is the result of this work
.
 What is schottky diode

Schottky diodes are semiconductor devices

which have a metal-semiconductor
transition as their basic structure and whose
basic electronic properties are defined by
this transition. Diodes are a fundamental
electronic building block. Their ability to
restrict current flow to substantially one
direction is a critical property relied upon in
virtually every electronic circuit
manufactured, from the smallest power
supply to the largest industrial process
controller. on voltages because of the lower
barrier height of the rectifying metal-to-
semiconductor junction and have faster
switching speeds because they are primarily
majority carrier devices.
 Construction

A Schottky diode uses a metal-semiconductor

junction as a Schottky barrier (instead of a
semiconductor-semiconductor junction as in
conventional diodes). This Schottky barrier
results in both very fast switching times and
low forward voltage drop
 Reverse recovery time

The most important difference between p-n and Schottky diode is

reverse recovery time, when the diode switches from non-conducting
to conducting state and vice versa. Where in a p-n diode the reverse
recovery time can be in the order of hundreds of nanoseconds and less
than 100 ns for fast diodes, Schottky diodes do not have a recovery
time, as there is nothing to recover from. The switching time is ~100
ps for the small signal diodes, and up to tens of nanoseconds for
special high-capacity power diodes. With p-n junction switching,
there is also a reverse recovery current, which in high-power
semiconductors brings increased EMI noise. With Schottky diodes
switching essentially instantly with only slight capacitive loading, this
is much less of a concern.

It is often said that the Schottky diode is a "majority carrier"

semiconductor device. This means that if the semiconductor body is
doped n-type, only the n-type carriers (mobile electrons) play a
significant role in normal operation of the device. The majority
carriers are quickly injected into the conduction band of the metal
contact on the other side of the diode to become free moving
electrons. Therefore no slow, random recombination of n- and p- type
carriers is involved, so that this diode can cease conduction faster than
an ordinary p-n rectifier diode. This property in turn allows a smaller
device area, which also makes for a faster transition. This is another
reason why Schottky diodes are useful in switch-mode power
converters; the high speed of the diode means that the circuit can
operate at frequencies in the range 200 kHz to 2 MHz, allowing the
use of small inductors and capacitors with greater efficiency than
would be possible with other diode types. Small-area Schottky diodes
are the heart of RF detectors and mixers, which often operate up to 50
GHz
 Limitations

The most evident limitations of Schottky diodes are the

relatively low reverse voltage rating for silicon-metal
Schottky diodes, 50 V and below, and a relatively high
reverse leakage current. The reverse leakage current,
increasing with temperature, leads to a thermal instability
issue. This often limits the useful reverse voltage to well
below the actual rating, but the diodes are improving. The
voltage ratings are now at 200 V
 Application

The Schottky barrier diodes are widely used in the

electronics industry finding many uses as diode
rectifier. Its unique properties enable it to be used in a
number of applications where other diodes would not be
able to provide the same level of performance. In
particular it is used in areas including:
 RF mixer and detector diode
 Power rectifier
 Power OR circuits
 Solar cell applications
 Clamp diode - especially with its use in LS TTL
Schottky Diode Circuits
 Diode Configurations and
Packaging

Modern RF and microwave systems often must be

manufactured at low cost without compromising
performance. Schottky diodes in surface mount
packages have proliferated as a result. Many of
these packages, such as those from the JEDEC
SOD and SOT families, offer a reasonably good
combination of low cost and RF performance, in
some cases for signal frequency as high as 10
GHz. Examples of such diodes are the SMS1546,
SMS7621 and SMS7630 family of detector diodes,
which are available in the SOT-23, SOT-143,
SOD-323, SC-70 and SC-79 packages, as well as
a very small land grid array package. Examples of
mixer diodes in surface mount plastic packages
include SMS3922, SMS3923 and SMS3924
families, also available in the packages listed
above, as well as in the SC-88 package.

These packages facilitate the assembly of the

diode to a printed circuit board, afford some
protection to the die from ambient conditions such
as humidity, and also facilitate the assembly of
diode arrays, such as series pairs, for use in
circuits that require more than one diode for proper
operation. These advantages do not come without
a cost; the internal bond wires that are utilized to
make connections, as well as the lead frames or
other internal metal conductors, present parasitic
inductance that is in series with the diode
junctions. In addition to this parasitic inductance,
there is also parasitic package capacitance that
typically is in parallel with the diode junctions.
These parasitic reactances cause the RF
performance to increasingly deviate from the ideal
performance as signal frequency increases.
The equivalent circuit for a single junction diode in
a package , the series inductance will reduce the
amount of input signal voltage across the diode
junction. The parallel package capacitance shunts
some of the signal current around the diode
junction. These two reactances also interact with
each other to produce a parallel resonant circuit
which also will behave in a manner that deviates
substantially from that of the die by itself.

For high frequency applications in which package

parasitic reactances are particularly troublesome,
two other die configurations have been developed
which allow the die to be connected to an external
circuit without the need for a diode package.
These configurations are known as beam lead
diodes and flip chip diodes.
 Conclusion

The Schottky junction is widely utilized in

frequency mixing and RF power detection circuits,
due to the nearly ideal performance of Schottky
diodes.

Several variations of Schottky diodes are available

which can be categorized by primarily by barrier
height, which is a property of the doping applied to
a semiconductor layer and metal which is
deposited on this material.