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    BEC Expt 03 BJT

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    SavithaGn
    This document describes an experiment to characterize the input and output characteristics of a BJT transistor in common emitter configuration. The input characteristics are obtained by measuring the base current (IB) and base-emitter voltage (VBE) at constant collector-emitter voltages (VCE). The output characteristics are obtained by measuring the collector current (IC) and collector-emitter voltage (VCE) at constant base currents (IB). Input resistance, reverse voltage gain, output resistance and forward current gain are calculated from the characteristic curves. Observations on the nature of the curves and specifications of the BJT are noted.

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    BEC Expt 03 BJT

    Uploaded by

    SavithaGn
    110 views5 pages
    This document describes an experiment to characterize the input and output characteristics of a BJT transistor in common emitter configuration. The input characteristics are obtained by measuring the base current (IB) and base-emitter voltage (VBE) at constant collector-emitter voltages (VCE). The output characteristics are obtained by measuring the collector current (IC) and collector-emitter voltage (VCE) at constant base currents (IB). Input resistance, reverse voltage gain, output resistance and forward current gain are calculated from the characteristic curves. Observations on the nature of the curves and specifications of the BJT are noted.

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    BEC_Expt_03_BJT

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    This document describes an experiment to characterize the input and output characteristics of a BJT transistor in common emitter configuration. The input characteristics are obtained by measuring the base current (IB) and base-emitter voltage (VBE) at constant collector-emitter voltages (VCE). The output characteristics are obtained by measuring the collector current (IC) and collector-emitter voltage (VCE) at constant base currents (IB). Input resistance, reverse voltage gain, output resistance and forward current gain are calculated from the characteristic curves. Observations on the nature of the curves and specifications of the BJT are noted.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    110 views5 pages

    BEC Expt 03 BJT

    Uploaded by

    SavithaGn
    This document describes an experiment to characterize the input and output characteristics of a BJT transistor in common emitter configuration. The input characteristics are obtained by measuring the base current (IB) and base-emitter voltage (VBE) at constant collector-emitter voltages (VCE). The output characteristics are obtained by measuring the collector current (IC) and collector-emitter voltage (VCE) at constant base currents (IB). Input resistance, reverse voltage gain, output resistance and forward current gain are calculated from the characteristic curves. Observations on the nature of the curves and specifications of the BJT are noted.

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    © All Rights Reserved
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    of 5

    Experiment 3

    Basic Electronic Circuits


    IIIT Chittoor

    Characteristics of BJT transistor in common emitter


    configuration
    The basic circuit diagram for studying characteristics of BJT is shown in the Fig. 3.1.
    The input voltage is applied between base and emitter terminals and the output voltage
    is measured between collector and emitter terminals. Here emitter region of the
    transistor is common to both input and output and hence the name common emitter
    configuration. While performing the experiment do not exceed the ratings of the
    transistor. This may lead to damage the transistor. Connect voltmeter and ammeter or
    multimeters with correct polarities as shown in the circuit diagram

    Input characteristics are obtained between the input current and input voltage keeping
    the output voltage (VCE) constant.
    1. Connect the circuit as shown in Fig 3.1
    2. Keep output voltage VCE = 0 V by varying VCC.
    3. Varying VBB gradually, note down base current IB and base-emitter
    voltage VBE.
    4. Vary in steps of 0.1 V from 0 V to 1.2 V.
    5. Repeat above procedure (step 3) for VCE = 5V.Tabulate readings in Table 3.1
    6. Plot the graph between VBE and IB for constant VCE values.

    IB

    Fig. 3.1: Circuit for plotting input characteristics of BJT in CE configuration

    VCE = 0V
    VBE (V)

    IB (A)

    VCE = 5V
    VBE (V)

    IB (A)

    Table 3.1: Experimental data for VBE vs. IB for different values of VCE

    To obtain input resistance find

    VBE and

    IB for a constant VCE on one of the input

    characteristic
    Input impedance = hie = Ri

    VBE
    (VCE is constant) =
    I B

    Reverse voltage gain = hre

    VBE
    (IB = constant) =
    VCE

    Fig. 3.2: Input characteristics of BJT in CE configuration

    Output characteristics are plotted between the output voltage (VCE) and output current
    (IC) at constant input current.

    1. Connect the circuit as shown in the Fig 3.3.


    2. Keep base current IB = 20 A by varying VBB.
    3. Varying VCC gradually in steps of 1V up to 12V and note down collector
    current IC and Collector-Emitter Voltage (VCE).
    4. Repeat above procedure (step 3) for IB =20 A,40 A, 60 A. Tabulate readings
    in Table 3.2
    5. Plot the graph between VCE and IC for different values of IB.

    Fig 3.3: Circuit for plotting input characteristics of BJT in CE configuration

    VBB(Volts)

    IB = 40A

    IB = 20A
    VCE(V)

    IC(mA)

    VCE(V)

    IC(mA)

    IB = 60A
    VCE(V)

    IC(mA)

    Table 3.2: Experimental data for VcE vs. IC for different values of IB

    To obtain output resistance find

    IC and

    VCB at a constant IB.on one of the output

    characteristics
    Output admittance

    I C
    1
    = Ro =
    (IB is constant) =
    hoe
    VCE

    Forward current gain = h fe

    I C
    (VCE = constant) =
    I B

    Fig. 3.4: output characteristics of BJT in CE configuration

    Observations:
    1. Comment on the nature of input characteristics
    2. What is the range of input and output resistances of a BJT working in
    CE mode
    3. What is the current gain of the transistor

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