Sound Fader Control Circuit
Sound Fader Control Circuit
Sound Fader Control Circuit
DATA SHEET
TEA6320
Sound fader control circuit
Preliminary specification
Supersedes data of September 1992
File under Integrated Circuits, IC01
1995 Dec 19
Philips Semiconductors
Preliminary specification
TEA6320
FEATURES
Source selector for four stereo and one mono inputs
Interface for noise reduction circuits
Interface for external equalizer
Volume, balance and fader control
Special loudness characteristic automatically controlled
in combination with volume setting
GENERAL DESCRIPTION
The sound fader control circuit TEA6320 is an I2C-bus
controlled stereo preamplifier for car radio hi-fi sound
applications.
PARAMETER
VCC
supply voltage
ICC
supply current
Vo(rms)
Gv
CONDITIONS
MIN.
TYP.
MAX.
UNIT
7.5
8.5
9.5
VCC = 8.5 V
26
mA
2000
mV
voltage gain
86
+20
dB
Gstep(vol)
dB
Gbass
bass control
15
+15
dB
Gtreble
treble control
12
+12
dB
Gstep(treble)
1.5
dB
(S+N)/N
VO = 2.0 V; Gv = 0 dB;
unweighted
105
dB
RR100
ripple rejection
76
dB
cs
channel separation
250 Hz f 10 kHz; Gv = 0 dB
90
96
dB
ORDERING INFORMATION
TYPE
NUMBER
TEA6320
TEA6320T
1995 Dec 19
PACKAGE
NAME
SDIP32
SO32
DESCRIPTION
VERSION
SOT232-1
SOT287-1
20 k
CKVL 220 nF
100 F
Vref
VCC
10
MUTE
12
21
31
MUTE
FUNCTION
ZERO CROSS
DETECTOR
POWER
SUPPLY
GND
10 nF
150 nF
VOLUME I
+20 to 31 dB
LOUDNESS
LEFT
47 F
19
BASS
LEFT
TREBLE
LEFT
15 dB
12 dB
VOLUME II
0 to 55 dB
BALANCE
FADER REAR
output
left
VOLUME II
0 to 55 dB
BALANCE
FADER FRONT
9 x 220 nF
Philips Semiconductors
5.6 nF
Cm
33 nF
BLOCK DIAGRAM
1995 Dec 19
2.2 k
8.2 nF
16
32
15
input
left
source
I2C-BUS
RECEIVER
LOGIC
13
SCL
SDA
11
SOURCE
input
mono
source
14
SELECTOR
VOLUME I
+20 to 31 dB
LOUDNESS
RIGHT
22
BASS
RIGHT
TREBLE
RIGHT
15 dB
12 dB
VOLUME II
0 to 55 dB
BALANCE
FADER FRONT
output
right
20
input
right
source
18
TEA6320
17
23
25
26
24
27
VOLUME II
0 to 55 dB
BALANCE
FADER REAR
30
28
MED421
150 nF
8.2 nF 20 k
TEA6320
2.2 k
5.6 nF
33 nF
Preliminary specification
CKVL 220 nF
CKIN
29
Philips Semiconductors
Preliminary specification
TEA6320
PINNING
SYMBOL PIN
DESCRIPTION
SDA
GND
ground
OUTLR
OUTLF
TL
B2L
handbook, halfpage
SDA
32 SCL
GND
31 VCC
OUTLR
30 OUTRR
OUTLF
29 OUTRF
B1L
IVL
TL
28 TR
ILL
B2L
27 B2R
QSL
10
B1L
26 B1R
IDL
11
MUTE
12
mute control
IVL
ICL
13
IMO
14
QSL 10
23 QSR
IBL
15
IDL 11
22 IDR
IAL
16
MUTE 12
21 Vref
IAR
17
ICL 13
20 ICR
IBR
18
IMO 14
19 CAP
CAP
19
ICR
20
IBL 15
18 IBR
Vref
21
IAL 16
17 IAR
IDR
22
QSR
23
ILR
24
IVR
25
B1R
26
B2R
27
TR
28
OUTRF
29
OUTRR
30
VCC
31
supply voltage
SCL
32
1995 Dec 19
25 IVR
TEA6320
ILL
24 ILR
MED422
Philips Semiconductors
Preliminary specification
TEA6320
and TL and TR are inputs for inserting an external
equalizer.
FUNCTIONAL DESCRIPTION
The source selector selects one of 4 stereo inputs or the
mono input. The maximum input signal voltage is
Vi(rms) = 2 V. The outputs of the source selector and the
inputs of the following volume control parts are available at
pins 8 and 10 for the left channel and pins 23 and 25 for
the right channel. This offers the possibility of interfacing a
noise reduction system.
The basic step width of bass and treble control is 3 dB. The
intermediate steps are obtained by switching 1.5 dB boost
and 1.5 dB attenuation steps.
Philips Semiconductors
Preliminary specification
TEA6320
The hardware mute function is favourable for use in Radio
Data System (RDS) applications. The zero crossing mute
avoids modulation plops. This feature is an advantage for
mute during changing presets and/or sources (e.g. traffic
announcement during cassette playback).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
10
Vn
VCC
Tamb
40
+85
Tstg
storage temperature
65
+150
Ves
electrostatic handling
note 1
Note
1. Human body model: C = 100 pF; R = 1.5 k; V 2 kV. Charge device model: C = 200 pF; R = 0 ; V 500 V.
1995 Dec 19
Philips Semiconductors
Preliminary specification
TEA6320
CHARACTERISTICS
VCC = 8.5 V; RS = 600 ; RL = 10 k; CL = 2.5 nF; AC coupled; f = 1 kHz; Tamb = 25 C; gain control Gv = 0 dB; bass
linear; treble linear; fader off; balance in mid position; loudness off; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
7.5
8.5
9.5
ICC
supply current
26
33
mA
VDC
3.83
4.25
4.68
Vref
Gv(max)
Vo(rms)
4.25
RS = 0 ; RL =
19
20
21
dB
2000
mV
start of clipping
THD = 1%
2300
mV
RL = 2 k; CL = 10 nF;
THD = 1%
2000
mV
200
mV
60
Hz
30
Hz
20000
Hz
Vi(rms)
input sensitivity
Vo = 2000 mV; Gv = 20 dB
fro
roll-off frequency
17
Hz
90
96
dB
Vi = 100 mV; Gv = 20 dB
0.1
cs
channel separation
Vi = 2 V; frequency range
250 Hz to 10 kHz
THD
frequency range
20 Hz to 12.5 kHz
RR
(S+N)/N
ripple rejection
Vi = 1 V; Gv = 0 dB
0.05
0.15
Vi = 2 V; Gv = 0 dB
0.1
Vi = 2 V; Gv = 10 dB
0.1
f = 100 Hz
70
76
dB
f = 40 Hz to 12.5 kHz
66
dB
unweighted;
20 Hz to 20 kHz (RMS);
Vo = 2.0 V; see Figs 6 and 7
105
dB
Gv = 0 dB
95
dB
Gv = 12 dB
88
dB
Gv = 20 dB
81
dB
1995 Dec 19
Philips Semiconductors
Preliminary specification
SYMBOL
TEA6320
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pno(rms)
10
nW
ct
crosstalk
V bus ( p p )
20 log -------------------------- between bus
V o ( rms )
note 2
110
dB
25
35
45
input impedance
f = 1 kHz
105
dB
f = 12.5 kHz
95
dB
Vi(rms)
2.15
1.8
Voffset
10
mV
Zo
output impedance
80
120
RL
10
CL
2500
pF
Gv
dB
100
150
200
25
33
40
Zo
output impedance
80
120
RL
CL
10
nF
RDCL
4.7
Vi(rms)
2.15
Vno
110
220
Gv = 0 dB
33
50
Gv = 66 dB
13
22
10
106
dB
86
dB
step resolution
dB
0.5
dB
mute position
CRtot
Gstep
1995 Dec 19
Philips Semiconductors
Preliminary specification
SYMBOL
TEA6320
PARAMETER
Ga
Gt
MUTEatt
Voffset
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gv = +20 to 50 dB
dB
Gv = 51 to 66 dB
dB
Gv = +20 to 50 dB
dB
mute attenuation
see Fig.10
100
110
dB
Gv = 0 to 66 dB
0.2
10
mV
Gv = 20 to 0 dB
15
mV
10
mV
51
dB
Gv
voltage gain
31
+20
dB
Gstep
step resolution
dB
LBmax
f = 40 Hz
17
dB
f = 10 kHz
4.5
dB
14
15
16
dB
Bass control
Gbass
Gstep
Voffset
f = 40 Hz
maximum attenuation
f = 40 Hz
14
15
16
dB
f = 40 Hz
1.5
dB
f = 40 Hz
0.5
dB
20
mV
11
12
13
dB
Treble control
Gtreble
Gstep
Voffset
f = 15 kHz
maximum attenuation
f = 15 kHz
11
12
13
dB
maximum boost
f > 15 kHz
15
dB
f = 15 kHz
1.5
dB
f = 15 kHz
0.5
dB
10
mV
53.5
55
56.5
dB
Gstep
step resolution
dB
1.5
dB
1995 Dec 19
Philips Semiconductors
Preliminary specification
SYMBOL
TEA6320
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1.45
VswLOW
input level
1.0
Ii
input current
300
Vsw
mute active
VswLOW = 1 V
saturation voltage
VCC
td(mute)
0.5
ms
discharge current
0.3
0.6
1.2
Ich
charge current
300
150
VswDEL
2.2
td
delay time
100
ms
Vwind
30
40
mV
V19
0.7
Cm = 10 nF
Power-on reset (when reset is active the GMU-bit (general mute) is set and the I2C-bus receiver is in
reset position)
VCC
2.5
end of reset
5.2
6.5
7.2
4.2
5.5
6.2
9.5
ViL
0.3
+1.5
IiH
10
+10
IiL
10
+10
VoL
0.4
IL = 3 mA
10
Philips Semiconductors
Preliminary specification
TEA6320
I2C-BUS PROTOCOL
I2C-bus format
S(1)
SLAVE ADDRESS(2)
A(3)
SUBADDRESS(4)
A(3)
DATA(5)
A(3)
P(6)
Notes
1. S = START condition.
2. SLAVE ADDRESS (MAD) = 1000 0000.
3. A = acknowledge, generated by the slave.
4. SUBADDRESS (SAD), see Table 1.
5. DATA, see Table 1; if more than 1 byte of DATA is transmitted, then auto-increment of the significant subaddress is
performed.
6. P = STOP condition.
Table 1
FUNCTION
LSB
BIT
7
2(1)
1(1)
0(1)
Volume/loudness
FFR
FFL
FRR
FRL
Bass
BA
Treble
TR
Switch
Note
1. Significant subaddress.
1995 Dec 19
11
Philips Semiconductors
Preliminary specification
TEA6320
FUNCTION
LSB
BIT
7
ZCM(1)
LOFF(2)
V5(3)
V4(3)
V3(3)
V2(3)
V1(3)
V0(3)
Volume/loudness
FFR
X(4)
X(4)
FFL
X(4)
X(4)
FFL5(6)
FFL4(6)
FFL3(6)
FFL2(6)
FFL1(6)
FFL0(6)
FRR
X(4)
X(4)
FRR5(7)
FRR4(7)
FRR3(7)
FRR2(7)
FRR1(7)
FRR0(7)
FRL
X(4)
X(4)
FRL5(8)
FRL4(8)
FRL3(8)
FRL2(8)
FRL1(8)
FRL0(8)
Bass
BA
X(4)
X(4)
X(4)
BA4(9)
BA3(9)
BA2(9)
BA1(9)
BA0(9)
Treble
TR
X(4)
X(4)
X(4)
TR4(10)
TR3(10)
TR2(10)
TR1(10)
TR0(10)
Switch
GMU(11)
X(4)
X(4)
X(4)
X(4)
SC2(12)
SC1(12)
SC0(12)
Notes
1. Zero crossing mode.
2. Switch loudness on/off.
3. Volume control.
4. Dont care bits (logic 1 during testing).
5. Fader control front right.
6. Fader control front left.
7. Fader control rear right.
8. Fader control rear left.
9. Bass control.
10. Treble control.
11. Mute control for all outputs (general mute).
12. Source selector control.
1995 Dec 19
12
Philips Semiconductors
Preliminary specification
TEA6320
Volume I setting
Gv
(dB)
DATA
V5
V4
V3
V2
V1
V0
Loudness on: the increment of the loudness characteristics is linear at every volume step in the range from
+20 to 11 dB
+20
+19
+18
+17
+16
+15
+14
+13
+12
+11
+10
+9
+8
+7
+6
+5
+4
+3
+2
+1
10
11
1995 Dec 19
13
Philips Semiconductors
Preliminary specification
Gv
(dB)
TEA6320
DATA
V5
V4
V3
V2
V1
V0
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
29
30
31
28
29
30
31
28
29
30
31
1995 Dec 19
14
Philips Semiconductors
Preliminary specification
TEA6320
FRR4
FRR3
FRR2
FRR1
FRR0
FRL5
FRL4
FRL3
FRL2
FRL1
FRL0
FFL5
FFL4
FFL3
FFL2
FFL1
FFL0
FFR5
FFR4
FFR3
FFR2
FFR1
FFR0
Gv
(dB)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
1995 Dec 19
15
Philips Semiconductors
Preliminary specification
TEA6320
DATA
FRR5
FRR4
FRR3
FRR2
FRR1
FRR0
FRL5
FRL4
FRL3
FRL2
FRL1
FRL0
FFL5
FFL4
FFL3
FFL2
FFL1
FFL0
FFR5
FFR4
FFR3
FFR2
FFR1
FFR0
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
Gv
(dB)
55
mute
mute
mute
mute
mute
mute
mute
mute
Note
1. For a particular range the data is always the same, only the subaddress changes.
1995 Dec 19
16
Philips Semiconductors
Preliminary specification
TEA6320
Bass setting
DATA
Gbass
(dB)
BA4
BA3
BA2
BA1
BA0
+15.0
+13.5
+15.0
+13.5
+15.0
+13.5
+12.0
+10.5
+9.0
+7.5
+6.0
+4.5
+3.0
+1.5
0(1)
0(2)
1.5
3.0
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
13.5
15.0
note 3
note 3
note 3
notes 3 and 4
Notes
1. Recommended data word for step 0 dB.
2. Result of 1.5 dB boost and 1.5 dB attenuation.
3. The last four bass control data words mute the bass response.
4. The last bass control and treble control data words (00000) enable the external equalizer connection.
1995 Dec 19
17
Philips Semiconductors
Preliminary specification
TEA6320
Treble setting
DATA
Gtreble
(dB)
TR4
TR3
TR2
TR1
TR0
+12.0
+10.5
+12.0
+10.5
+12.0
+10.5
+12.0
+10.5
+9.0
+7.5
+6.0
+4.5
+3.0
+1.5
0(1)
0(2)
1.5
3.0
4.5
6.0
7.5
9.0
10.5
12.0
note 3
note 3
note 3
note 3
note 3
note 3
note 3
notes 3 and 4
Notes
1. Recommended data word for step 0 dB.
2. Result of 1.5 dB boost and 1.5 dB attenuation.
3. The last eight treble control data words select treble output.
4. The last treble control and bass control data words (00000) enable the external equalizer connection.
1995 Dec 19
18
Philips Semiconductors
Preliminary specification
TEA6320
Loudness setting
Table 9
CHARACTERISTIC
DATA LOFF
With loudness
Linear
Table 8
DATA
FUNCTION
Selected input
DATA
FUNCTION
SC2
SC1
SC0
X(1)
X(1)
Note
1. X = dont care bits (logic 1 during testing).
1995 Dec 19
Mute mode
19
GMU
ZCM
Direct mute
Philips Semiconductors
Preliminary specification
TEA6320
MED423
18
Gbass
(dB)
12
12
18
10
10 2
10 3
f (Hz)
10 4
MED424
15
Gtreble
(dB)
10
10
15
10 2
10 3
10 4
1995 Dec 19
20
f (Hz)
10 5
Philips Semiconductors
Preliminary specification
TEA6320
MED425
handbook,20
full pagewidth
Gv
(dB)
10
10
20
30
40
10
10 2
10 3
10 4
f (Hz)
10 5
MED426
100
S/N
(dB)
(1)
90
(2)
(3)
80
70
60
50
10 4
10 3
10 2
10 1
(1) Vi = 2.0 V.
(2) Vi = 0.5 V.
(3) Vi = 0.2 V.
1995 Dec 19
21
Po (W)
10
Philips Semiconductors
Preliminary specification
TEA6320
MED427
110
S/N
(dB)
(1)
100
(2)
90
(3)
80
70
60
10 4
10 3
10 2
10 1
Po (W)
10
MED428
200
noise
(V)
150
100
(1)
50
(2)
0
70
50
30
10
Stereo/mono inputs.
(1) Loudness on.
(2) Loudness off.
1995 Dec 19
22
10
gain (dB)
30
Philips Semiconductors
Preliminary specification
TEA6320
MED429
60
(dB)
80
100
120
140
20
50
10 2
200
500
10 3
Fig.9 Muting.
1995 Dec 19
23
2 x 10 3
5 x 10 3
10 4
2 x 10 4
f (Hz)
Philips Semiconductors
Preliminary specification
TEA6320
mute pin 12
TEA6320
U
(V)
ID = 0.6 A
Cm = 10 nF
I
(A)
VCC
8.5
150
100 ms
zero crossing
mute start
end of delay
t (ms)
hard mute
on
hard mute
off
1995 Dec 19
24
Philips Semiconductors
Preliminary specification
TEA6320
POWER STAGE
handbook, halfpage
TEA6320
G = 20 dB
VI(min) = 200 mV
Vo = 2 V for P(max)
P(max) = 100 W at 4
MBE899
a.
POWER STAGE
handbook, halfpage
TEA6320
G = 26 dB
VI(min) = 200 mV
Vo = 1 V for P(max)
P(max) = 100 W at 4
MED431
b.
a. Gain volume I = 20 dB (Gv(max)); gain volume II = 0 dB; fader and balance range = 55 dB.
b. Gain volume I = 20 dB (Gv(max)); gain volume II = 6 dB global setting; fader and balance range now 49 dB, previously 55 dB.
1995 Dec 19
25
Philips Semiconductors
Preliminary specification
TEA6320
VP
+8.5 V to
oscilloscope
VCC
8.5 V
470 F
4.7 k
inputs
31
16
15
13
11
14
17
18
20
22
3
4
TEA6320
outputs to
oscilloscope
29
30
9 220 nF
19
21
47
F
9 600
4 4.7 F
100
F
4 10 k
MED432
MED433
10
(V)
8
(1)
6
4
(2)
0
0
(1) VCC.
(2) VO.
1995 Dec 19
26
t (s)
Philips Semiconductors
Preliminary specification
TEA6320
220 nF
33 nF
5.6 nF
10 nF
100 F
21 10
VCC = 8.5 V
12
31
0.1 F
10 k
32
SCL
SDA
2
TEA6320
1000 F
19
VP
47 F
0.2 V (RMS)
600
220 nF
output right
output left
front and rear
23
25
26
27
4.7 F
VO
28
MED434
220 nF
5.6 nF
33 nF
220 nF
33 nF
5.6 nF
10 nF
100 F
21 10
VCC = 8.5 V
12
31
0.1 F
470 F
32
SCL
SDA
2
TEA6320
Vp
19
47 F
input A to D right and left
220 nF
Vi
600
220 nF
output left
output right
front and rear
23
25
220 nF
26
27
33 nF
28
5.6 nF
MED435
27
4.7 F
VO
Philips Semiconductors
Preliminary specification
TEA6320
MED436
V
4
(1)
3
2
1
0
1
(2)
t1
t2
(3)
2
3
4
1995 Dec 19
28
Philips Semiconductors
Preliminary specification
TEA6320
handbook, halfpage
CKVL
0 dB
8
V1
R1
33 k
Gv
------20
C1
10
R3 = R1 -------------------- . With Gv = 21 dB and R1 = 33 k,
G
V2
R2
R3
------20
MED437
1 10
R3 = 3.2 k is generated.
For the low-pass filter characteristic the value of the
external capacitor C1 can be determined by setting a
specific boost for a defined frequency and referring the
gain to Gv at fref as indicated above.
Gv
------20
( R1 + R3 ) 10 R3
1
--------------------- = ------------------------------------------------------------Gv
j ( C1 )
------20
1 10
For example: 3 dB boost at f = 1 kHz
Gv = Gv(ref) + 3 dB = 18 dB; f = 1 kHz and C1 = 100 nF.
If a loudness characteristic with additional high frequency
boost is desired, an additional high-pass section has to be
included in the external filter circuit as indicated in the
block diagram. A filter configuration that provides
AC coupling avoids offset voltage problems.
1995 Dec 19
29
Philips Semiconductors
Preliminary specification
TEA6320
3
4.25 V
+
1
5V
1.8 k
80
MBE900
MBE901
5
+
4.25 V
6
4.25 V
+
80
2.4 k
MBE902
MBE903
1995 Dec 19
30
Philips Semiconductors
Preliminary specification
TEA6320
7
4.25 V
4.25 V
+
4.16 k
9.4 k
150 k
4.25 V
4.25 V
MED438
MBE904
+
4.25 V
+
10
4.25 V
80
1.12 k
MBE905
MBE906
1995 Dec 19
31
Philips Semiconductors
Preliminary specification
TEA6320
12
11
4.25 V
1.3 k
8.5 V
constant
2.2 V
maximum
200A
35 k
0.6 A
constant
4.25 V
4.5 k
MBE907
MBE908
19
4.7 k
8.4 V
300
+
3.4 k
5 k
4.25 V
21
3.4 k
MHA063
Fig.28 Pin 19: filtering for supply; pin 21: reference voltage.
31
32
5V
MED440
MBE909
1995 Dec 19
1.8 k
32
Philips Semiconductors
Preliminary specification
TEA6320
PACKAGE OUTLINES
SDIP32: plastic shrink dual in-line package; 32 leads (400 mil)
SOT232-1
ME
seating plane
A2 A
A1
c
e
(e 1)
w M
b1
MH
b
17
32
pin 1 index
E
16
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
min.
A2
max.
b1
D (1)
E (1)
e1
ME
MH
Z (1)
max.
mm
4.7
0.51
3.8
1.3
0.8
0.53
0.40
0.32
0.23
29.4
28.5
9.1
8.7
1.778
10.16
3.2
2.8
10.7
10.2
12.2
10.5
0.18
1.6
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
92-11-17
95-02-04
SOT232-1
1995 Dec 19
EUROPEAN
PROJECTION
33
Philips Semiconductors
Preliminary specification
TEA6320
SOT287-1
A
X
c
y
HE
v M A
Z
17
32
Q
A2
(A 3)
A1
pin 1 index
Lp
L
16
detail X
w M
bp
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
D (1)
E (1)
HE
Lp
Z (1)
mm
2.65
0.3
0.1
2.45
2.25
0.25
0.49
0.36
0.27
0.18
20.7
20.3
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.2
1.0
0.25
0.25
0.1
0.95
0.55
inches
0.10
0.012 0.096
0.004 0.086
0.01
0.02
0.01
0.011
0.007
0.81
0.80
0.30
0.29
0.050
0.419
0.394
0.055
0.043
0.016
0.047
0.039
0.01
0.01
0.004
0.037
0.022
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-01-25
97-05-22
SOT287-1
1995 Dec 19
EUROPEAN
PROJECTION
34
Philips Semiconductors
Preliminary specification
TEA6320
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 C.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
SDIP
SOLDERING BY DIPPING OR BY WAVE
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1995 Dec 19
35
Philips Semiconductors
Preliminary specification
TEA6320
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
PURCHASE OF PHILIPS I2C COMPONENTS
Purchase of Philips I2C components conveys a license under the Philips I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.
1995 Dec 19
36
Philips Semiconductors
Preliminary specification
TEA6320
NOTES
1995 Dec 19
37
Philips Semiconductors
Preliminary specification
TEA6320
NOTES
1995 Dec 19
38
Philips Semiconductors
Preliminary specification
TEA6320
NOTES
1995 Dec 19
39
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