Decimal Matrix Code For Enhanced Memory Reliability Against Multiple Cell Upsets
Decimal Matrix Code For Enhanced Memory Reliability Against Multiple Cell Upsets
Abstract: Transient multiple cell upsets MCUs are becoming major issues in their liability of
memories exposed to radiation environment. To prevent MCUs from causing data corruption,
more complex error correction codes(ECCs) are widely used to protect memory, but the main
problem is that they would require higher delay over head. Moreover, the encoder-reuse
technique (ERT) is proposed to minimize the area over head of extra circuits without disturbing
the whole encoding and decoding processes. The main issue is that they are double error
correction codes and the error correction capabilities are not improved in all cases. In this paper,
novel decimal matrix code (DMC) based on divide-symbol is proposed to enhance memory
reliability with lower delay over head. The proposed DMC is compared to well known codes
such as existing Hamming codes, Punctured different set PDS codes. The only drawback is that,
it requires more redundant bits for memory protection. The obtained results show that the mean
time to failure (MTTF) of the proposed scheme is 452.9%, 154.6% and 122.6% of Hamming,
MC, and PDS, respectively. Recently, matrix codes (MCs) based on Hamming codes have been
proposed for memory protection. The proposed DMC utilizes decimal algorithm to obtain the
maximum error detection capability. ERT uses DMC encoder itself to be part of the decoder. At
the same time, the delay overhead of the proposed scheme is 73.1%, 69.0% and 26.2% of
Hamming, MC and PDS respectively.
Keywords: Decimal algorithm, error correction codes (ECCs), mean time to failure (MTTF),
memory, multiple cells upsets(MCUs).
I.
INTRODUCTION
II.P ROPOSEDDMC
Corrector
Locator
Syndrome
(HandS)
0
information
H4H3H2H1H0=H4H3H2H1H H4H3H2H1H0 must be recomputed from the received
(5)
the original set of redundant
bits D and compared to
(6)
S0 =V0V0
bits in order to obtain the syndrome bits H and S. The
And similarly for the rest vertical syndrome bits, error locator uses H and S to detect and locate which
bits some error occur in. Finally the error can be
whererepresents decimal integer subtraction.
corrected by inverting values of error bits.
When H4H3H2H1H0 and S3S0 are equal to zero,
(17)
(18)
Then
the
horizontal
syndrome
H4H3H2H1H0 can be obtained
=1001+0110
=01111.
III.
bits
H4H3H2H1H0=H4H3H2H1H H04H3H2H1H0
=0111101111
=00000
This result means that no errors occur in
symbols 0 and 2 and memory will suffer a failure.
However, this case is rare.
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Reliability Estimation:
The reliability of our proposed code can be
analyzed in terms of the mean time to failure
(MTTF). It is assumed that MCUs arrive at
memories following a Poisson distribution.
MTTF is given by MTTF=J(t). dt
Table II shows MTTFs of different codes for
different event arrival rate . In this table, we can
see that the proposed scheme has higher MTTF
bymore than 122.6%, 154.6%, and 452.9%
compared to PDS [9], MC [15], and Hamming,
respectively
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Overheads Analysis:
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
Authors Profile
Miss.
T.
DHIVYA
pursuing Master degree in
VLSI Design from Sri
Eshwar
College
of
Engineering, Coimbatore.
Area of interests are Low
Power VLSI and Testing
of VLSI.
Mr. M. MOHANKUMAR
is Assistant professor at Sri
Eshwar
College
of
Engineering,
Coimbatore.
His Specialization area is
VLSI
Design.
Mr. SWAMINATHAN
VEERAPANDIAN
is
working
as
network
executive
in
Tata
Communications Ltd. His
specialization area is
Networking Systems.
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