IRF730

IRF730
N-CHANNEL 400V - 0.75 - 5.5A TO-220

PowerMESHII MOSFET
TYPE
IRF730
VDSS
RDS(on)
ID
400 V
<1
5.5 A
TYPICAL RDS(on) = 0.75

EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
3
1
DESCRIPTION
The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS

Symbol
Value
Unit
Drain-source Voltage (VGS = 0)
400
Drain-gate Voltage (RGS = 20 k)
400
Gate- source Voltage
20
ID
Drain Current (continuos) at TC = 25C
5.5
ID
Drain Current (continuos) at TC = 100C
3.5
Drain Current (pulsed)
22
Total Dissipation at TC = 25C
100
Derating Factor
0.8
W/C
VDS
VDGR
VGS
IDM ()
PTOT
dv/dt(1)
Tstg
Tj
Parameter
Peak Diode Recovery voltage slope

Storage Temperature
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
V/ns
65 to 150
150
(1)ISD 5.5A, di/dt 90A/s, VDD V(BR)DSS, T j TJMAX.
March 2001
1/8
This datasheet has been downloaded from http://www.digchip.com at this page
IRF730
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1.25
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
C/W
Maximum Lead Temperature For Soldering Purpose
300
Tl
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)
5.5
EAS
Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)
300
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 A, VGS = 0
Zero Gate Voltage

Drain Current (VGS = 0)
VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
Min.
Typ.
Max.
400
Unit
V
VDS = Max Rating, TC = 125 C
50
100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3 A
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,

VGS = 10V
Min.
Typ.
Max.
Unit
0.75
5.5
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Crss
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2.9
Max.
Unit
S
530
pF
Output Capacitance
90
pF
Reverse Transfer
Capacitance
15
pF
IRF730
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD = 200V, ID = 3 A
RG = 4.7 VGS = 10V
(see test circuit, Figure 3)
VDD = 320V, ID =5.5A,
VGS = 10V
Typ.
Max.
Unit
11
ns
15
ns
18
4
8.5
24
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
td(off)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
8
12
23
Vclamp =320V, ID = 7 A
RG = 4.7, VGS = 10V
ns
ns
ns
SOURCE DRAIN DIODE

Symbol
Max.
Unit
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
24
VSD (1)
Forward On Voltage
ISD = 5.5 A, VGS = 0
1.6
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current
ISD = 7 A, di/dt = 100A/s,

VDD = 100V, Tj = 150C
ISD
trr
Qrr
IRRM
Parameter
Test Conditions
Min.
Typ.
280
1.4
10
ns
C
A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/8
IRF730
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
IRF730
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
IRF730
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For

Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
6/8
IRF730
TO-220 MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L4
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
IRF730
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
8/8

IRF730

Uploaded by

Copyright:

Available Formats

IRF730

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

IRF730

Uploaded by

Copyright:

Available Formats

IRF730

N-CHANNEL 400V - 0.75 - 5.5A TO-220

TYPICAL RDS(on) = 0.75

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 k)

Gate- source Voltage

Drain Current (continuos) at TC = 25C

Drain Current (continuos) at TC = 100C

Drain Current (pulsed)

Total Dissipation at TC = 25C

Peak Diode Recovery voltage slope

() Pulse width limited by safe operating area

(1)ISD 5.5A, di/dt 90A/s, VDD V(BR)DSS, T j TJMAX.

This datasheet has been downloaded from http://www.digchip.com at this page

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

Avalanche Current, Repetitive or Not-Repetitive

Single Pulse Avalanche Energy

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

Zero Gate Voltage

VDS = Max Rating

VDS = Max Rating, TC = 125 C

Gate Threshold Voltage

VDS = VGS, ID = 250A

On State Drain Current

VDS > ID(on) x RDS(on)max,

SOURCE DRAIN DIODE

Source-drain Current (pulsed)

ISD = 5.5 A, VGS = 0

Reverse Recovery Time

ISD = 7 A, di/dt = 100A/s,

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

Safe Operating Area

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

TO-220 MECHANICAL DATA

You might also like