IC Packaging Service

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CMP offers a Complete Packaging Service:

Ceramic / Plastic / Plastic Open Cavity

Prototyping / Low volume / Add. packaging

Wide Range of Packages

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Ceramic Packages

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Sealed or Removable Lids

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Dual
In-Line

Pin Grid
Array

CerQuad
Flat Pack.

DIL 8
DIL 14
DIL 16
DIL 18
DIL 20
DIL 24
DIL 28
DIL 40
DIL 48

PGA 68
PGA 84
PGA 100
PGA 120
PGA 144
PGA 160
PGA 180
PGA 208
PGA 224
PGA 256

CQFP 20
CQFP 28
CQFP 44
CQFP 64
CQFP 68
CQFP 84
CQFP 100
CQFP 120
CQFP 128
CQFP 144
CQFP 160
CQFP 208
CQFP 256

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Leadless
& J-Leaded
Chip Carrier
LCC 16
LCC 20
LCC 28
LCC 32
LCC 44
LCC 68
LCC 84

Small
Outline
SOIC 8
SOIC 16
SOIC 20
SOIC 24
SOIC 28

JLCC 28
JLCC 44
JLCC 52
JLCC 68
JLCC 84
CMP annual users meeting, January 10th 2008, PARIS

Plastic Packages

(1/2)
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Leaded

QFP Family
Plastic Leaded
Chip Carrier

PLCC 20
PLCC 28
PLCC 44
PLCC 68

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Metric Quad
Flat Package

MQFP 80
MQFP 100
MQFP 128
.
.
.
MQFP 240
MQFP 256

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Thin Quad
Flat Package

Low Quad
Flat Package

Small
Outline

TQFP 32
TQFP 44
TQFP 48
.
.
.
TQFP 160
TQFP 176

LQFP 32
LQFP 44
LQFP 48
.
.
.
LQFP 160
LQFP 176

SOIC 8
SOIC 14
SOIC 16
SOIC 20
SOIC 22
SOIC 24
SOIC 28

CMP annual users meeting, January 10th 2008, PARIS

Plastic Packages

(2/2)
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Thin, Array, Leadless

Thin Shrink Small

Outline Package

Plastic
Ball Grid Array

Fine pitch
Ball Grid Array

Quad Flat
No lead

TSSOP 20
TSSOP 24
TSSOP 28
TSSOP 38

PBGA 204
PBGA 217
PBGA 225
PBGA 250
PBGA 313
PBGA 352
PBGA 420
PBGA 456

FBGA 81
FBGA 108
FBGA 144
FBGA 160
FBGA 196
FBGA 208
FBGA 225
FBGA 256
FBGA 280

QFN 8
QFN 10
QFN 12
QFN 16
.
.
.
QFN 64
QFN 72
QFN 80

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Plastic Packages : Open Cavity

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STEP 1

Dummy Package

STEP 2

STEP 3

Open Cavity

Wire Bonding

STEP 4

Remolding or Lid
& Marking

Advantages:
- Open cavity packages enable smooth transfer to plastic packaging
packaging process
- Price for small quantities up to 2020-40 dies
- Open cavity process is universal and can be applied to any plastic
plastic IC package:
BGA, QFP, QFN, PLCC, SOIC, TSSOP and more
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CMP annual users meeting, January 10th 2008, PARIS

Package Guidelines

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Ceramic or Plastic ?

Prototyping:
CMP recommends to use ceramic packaging
Advantages: Price for small quantities
Removable lids
Flexible constraint (wire length, ground bonds, die thickness)
thickness)
Thermal, HighHigh-Reliability (Space qualification)

Low volume:
CMP recommends to choose the plastic package
Advantages:: Low cost from 20Advantages
20-40 packaging (open tool only)
Access to density solutions for low price (QFN, PBGA)

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CMP annual users meeting, January 10th 2008, PARIS

Pads and Padring rules

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Standard Rules

Non Standard Rules

(available on request)

76 x 76
85 x 85

55 x 55

Absolute minimum (m)

Recommended (m)
Bonding PADS pitch

10
15

10

Absolute minimum (m)

Recommended (m)

86
100

65

Bonding PAD width

Absolute minimum (m)
Recommended (m)
Bonding PADS spacing

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CMP annual users meeting, January 10th 2008, PARIS

CMP packaging process flow

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Packaging is managed by MPW run.

CMP users choose the package (CMP can help)
before the submission.
CMP propose to the users the most
convenient package. (die size vs cavity size)
CMP standardize all bonding diagrams.
CMP bonding diagram

CMP ask the users for bonding diagram

and datasheet confirmation during the wafer fabrication.
CMP order the packages to the packaging house.
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CMP annual users meeting, January 10th 2008, PARIS

Data Sheet (Ceramic & Plastic Package)

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Available Data to Customers

Package Data Sheet

Blank Bonding Diagram

Files Extension: .pdf, .dwg

Soon: Data sheets available for customers throught the web customer interface
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Packaging Technologies

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CQF

.
N
F
P, Q

Wire Bonding
Sta
Mul t c ked di e
i-Stac
s
ked
die s

e
Wa f

i ng
p
m
r Bu

Flip-Chip
Di e
B

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ump
i ng

CMP annual users meeting, January 10th 2008, PARIS

Wire bonding solutions

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Thermo-Sonic Method: Ball-Bonding

Pure and hardened Gold wires
Diameter wires from 18 m up to 50 m
Few packaging constraints

Ultra-Sonic Method : Wedge-Bonding

Aluminium wires with diameter up to 50 m
Allow high voltage applications
Interconnection density smaller

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CMP annual users meeting, January 10th 2008, PARIS

Wire bonding Limits

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Pad opening need to be about 3 times larger than the wire diameter
diameter
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Flip-Chip using Stud Bump - Die Level

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Available at die level

Standard machine for tooling
Gold wire (with Pd): 18-20 m
Minimum pitch between bumps: 65 m
Limited to 32 I/O
Die down electrical connection (over a substrate or circuit)

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CMP annual users meeting, January 10th 2008, PARIS

Flip-Chip vs Wire bonding

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FLIP CHIP

WIRE BONDING

Size reduced, smaller pitch

Higher integration (I/Os)

Moderate cost

Shorter connection length

Reliability

Efficient heat dissipation

Compatibility housings

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Package features (1/3)

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Chip Scale Package (CSP)

Density Solutions
CSP package => Naked die occupies 80% or more of the package
Electrical performance is enhanced due to shorter interconnections

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CMP annual users meeting, January 10th 2008, PARIS

Package features (2/3)

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Quad Flat No lead (QFN)

QFN advantages:
Thermal Performance
Low Inductance; High Frequency
Thin; Low Profile
Die thickness between 200 and 300 m
Mold Compound

0.9 mm

DIE

Copper Lead Frame

Lead
Silver Ground Bond pad

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Solder Plating

CMP annual users meeting, January 10th 2008, PARIS

Package features (3/3)

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Ball Grid Array (BGA)

BGA advantages:
I/O
I/Os: up to 456
Shorter interconnections (density)
1 up to 4 routable layers
High Frequency
Die thickness between 200 and 300 m

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BGA example realized with CMP (1/2)

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Ceramic BGA

Body size: 35 mm x 35 mm
420 I/Os
Thickness: 1.8 mm
Ball pitch: 1.27 mm

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BGA example realized with CMP (2/2)

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Organic BGA

Body size: 31 mm x 31 mm
304 I/Os
Pad size: 34 um x 108 um
Pad pitch: 78 um
Ball pitch: 1.27 mm

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CMP annual users meeting, January 10th 2008, PARIS

Choice of the packages per year

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50
40
30
20
10
0
2004
DIL

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PGA

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2005
LCC

2006
JLCC

QFN

2007
QFP

SOIC

BGA

CMP annual users meeting, January 10th 2008, PARIS

Packages choice evolution

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50
45
40
35
30
25
20
15
10
5
0

2004
2005
2006
2007

DIL
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PGA

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LCC

JLCC

QFN

QFP

SOIC

CMP annual users meeting, January 10th 2008, PARIS

Packaging Analysis

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Naked dies are visually inspected according to the

MIL-STD -883 norm, method 2010 condition A or B

Ceramic Bonding Checking:

Visual Inspection

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Plastic Bonding Checking:

X-Ray Test

CMP annual users meeting, January 10th 2008, PARIS

Packaging Process Flow for MPW Run

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Extracted
circuits

Visual
Inspection

Naked Dies
on Sticking film

Sawing

8 or 12 Wafer

Loading in
Waffle Pack

Packaging

Plastic
Packaging

Ceramic
Packaging

Turnaround: 2 weeks
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Back lapping

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8 wafers (200 mm): 725 m (+/

(+/-- 20
20m)
m) standard thickness
12 wafers (300 mm): 780 m (+/
(+/-- 20
20m)
m) standard thickness
Wafer level back lapping
austriamicrosystems:
0.35 m (8)
(8) => standard back lapping to 480 m
=> back lapping to 380 m on request
STMicroelectronics:
0.25 m (8)
(8) => standard back lapping to 375 m
0.12 m (12)
(12) => standard back lapping to 375 m
90 nm
nm (12)
(12) => standard back lapping to 375 m
65 nm
nm (12)
(12) => standard back lapping to 250 m
OMMIC:
ED02AH => back lapping to 100m
Die level back lapping
Down to 150 m (absolute limit 100 m)
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ElectroStatic Discharge (ESD) packing

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Conditioning & Shipment:

Antistatic Tubes:

Antistatic Bags:
Protection against the electrostatic discharge
Surface Resistance (ohms) :108-109

Antistatic Boxes:

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Others Packaging Solution

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Case by case solutions

Optical resin
Hybrid
Chip On Board (COB)
Metallic package
Conditioning of wafers and naked dies
(vacuum or nitrogen atmosphere)
Service for additional packaging from previous run

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CMP annual users meeting, January 10th 2008, PARIS