ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /

ISL9V3040S3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
General Description

Formerly Developmental Type 49362

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and

ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.

Applications
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications

Features

EcoSPARK devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more
information.

Space saving D-Pak package availability

SCIS Energy = 300mJ at TJ = 25oC
Logic Level Gate Drive

Package

Symbol

JEDEC TO-263AB
D-Pak

JEDEC TO-220AB
E

G
COLLECTOR

G
E
R1
GATE

JEDEC TO-252AA
D-Pak

JEDEC TO-262AA
E

R2

C
G

EMITTER

E
COLLECTOR
(FLANGE)

Device Maximum Ratings TA = 25C unless otherwise noted

Symbol
BVCER

Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)

Ratings
430

Units
V

BVECS

Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)

24

ESCIS25

At Starting TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy

300

mJ

ESCIS150

At Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy

170

mJ

IC25

Collector Current Continuous, At TC = 25C, See Fig 9

21

IC110

Collector Current Continuous, At TC = 110C, See Fig 9

17

VGEM

Gate to Emitter Voltage Continuous

10

Power Dissipation Total TC = 25C

150

Power Dissipation Derating TC > 25C

1.0

W/C

PD
TJ
TSTG
TL

Operating Junction Temperature Range

-40 to 175

Storage Junction Temperature Range

-40 to 175

C
C

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

300

Tpkg

Max Lead Temp for Soldering (Package Body for 10s)

260

ESD

Electrostatic Discharge Voltage at 100pF, 1500

kV

2003 Fairchild Semiconductor Corporation

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

April 2003

Device Marking
V3040D

Device
ISL9V3040D3S

Package
TO-252AA

Tape Width
16mm

Quantity
2500

V3040S

ISL9V3040S3S

TO-263AB

24mm

800

V3040P

ISL9V3040P3

TO-220AA

V3040S

ISL9V3040S3

TO-262AA

Electrical Characteristics TA = 25C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BVCER

Collector to Emitter Breakdown Voltage

IC = 2mA, VGE = 0,
RG = 1K, See Fig. 15
TJ = -40 to 150C

370

400

430

BVCES

Collector to Emitter Breakdown Voltage

IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150C

390

420

450

BVECS

Emitter to Collector Breakdown Voltage

IC = -75mA, VGE = 0V,

TC = 25C

30

BVGES

Gate to Emitter Breakdown Voltage

IGES = 2mA

12

14

Collector to Emitter Leakage Current

VCER = 250V, TC = 25C

RG = 1K, See T = 150C
C
Fig. 11

25

mA

mA

40

mA

70

10K

26K

ICER

IECS

Emitter to Collector Leakage Current

R1

Series Gate Resistance

R2

Gate to Emitter Resistance

VEC = 24V, See TC = 25C

Fig. 11
TC = 150C

On State Characteristics
VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 6A,
VGE = 4V

TC = 25C,
See Fig. 3

1.25

1.60

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 10A,
VGE = 4.5V

TC = 150C,
See Fig. 4

1.58

1.80

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 15A,
VGE = 4.5V

TC = 150C

1.90

2.20

17

nC

Dynamic Characteristics
QG(ON)

Gate Charge

IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14

VGE(TH)

Gate to Emitter Threshold Voltage

IC = 1.0mA,
VCE = VGE,
See Fig. 10

VGEP

Gate to Emitter Plateau Voltage

TC = 25C

1.3

2.2

TC = 150C

0.75

1.8

3.0

IC = 10A,
VCE = 12V

Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS

Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching

VCE = 14V, RL = 1,
VGE = 5V, RG = 1K
TJ = 25C, See Fig. 12

0.7

2.1

VCE = 300V, L = 500Hy,

VGE = 5V, RG = 1K
TJ = 25C, See Fig. 12

4.8

15

2.8

15

TJ = 25C, L = 3.0 mHy,

RG = 1K, VGE = 5V, See
Fig. 1 & 2

300

mJ

TO-252,TO-263,TO-220,TO262

1.0

C/W

Thermal Characteristics
RJC

Thermal Resistance Junction-Case

2003 Fairchild Semiconductor Corporation

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Package Marking and Ordering Information

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

30
RG = 1k, VGE = 5V,Vdd = 14V
25

20

15
TJ = 25C
TJ = 150C
10

5
SCIS Curves valid for Vclamp Voltages of <430V
0

30
RG = 1k, VGE = 5V,Vdd = 14V
25

20

15
TJ = 25C
10
TJ = 150C
5
SCIS Curves valid for Vclamp Voltages of <430V
0

25

50

75

100

125

150

175

200

tCLP, TIME IN CLAMP (S)

VGE = 3.7V
VGE = 4.0V

1.26

1.22
VGE = 4.5V
VGE = 5.0V

VGE = 8.0V

1.14
-75

-50

-25

25

50

75

100

125

150

1.8
ICE = 10A
1.7
VGE = 3.7V
VGE = 4.0V

1.6

1.5

1.4

VGE = 4.5V
VGE = 5.0V

1.3

VGE = 8.0V

1.2

175

-75

-50

-25

TJ, JUNCTION TEMPERATURE (C)

50

75

100

125

150

175

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

25
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

15

25

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

20

10

Figure 2. Self Clamped Inductive Switching

Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1.30

1.18

L, INDUCTANCE (mHy)

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

ICE = 6A

10

5
TJ = - 40C

25
VGE = 8.0V
VGE = 5.0V
20

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

15

10

5
TJ = 25C
0

0
0

1.0

2.0

3.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage vs

Collector Current

2003 Fairchild Semiconductor Corporation

1.0

2.0

3.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Typical Performance Curves (Continued)

VGE = 8.0V
VGE = 5.0V
20

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

15

10

5
TJ = 175C

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

25

25
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250s
20

15
TJ = 150C
10
TJ = 25C
5
TJ = -40C
0

1.0

2.0

3.0

4.0

1.0

2.0

1.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

3.0

2.5

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

4.5

Figure 8. Transfer Characteristics

25

2.2
VCE = VGE

VGE = 4.0V
20

VTH, THRESHOLD VOLTAGE (V)

ICE, DC COLLECTOR CURRENT (A)

4.0

3.5

VGE, GATE TO EMITTER VOLTAGE (V)

15

10

ICE = 1mA

2.0

1.8

1.6

1.4

1.2

1.0

0
25

50

75

100

125

150

-50

175

-25

TC, CASE TEMPERATURE (C)

25

50

75

100

125

150

175

TJ JUNCTION TEMPERATURE (C)

Figure 9. DC Collector Current vs Case

Temperature

Figure 10. Threshold Voltage vs Junction

Temperature
12

10000

ICE = 6.5A, VGE = 5V, RG = 1K

VECS = 24V

SWITCHING TIME (S)

LEAKAGE CURRENT (A)

Resistive tOFF
10

1000

100

10
VCES = 300V

Inductive tOFF
8

Resistive tON

VCES = 250V
2

0.1
-50

-25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (C)

Figure 11. Leakage Current vs Junction

Temperature

2003 Fairchild Semiconductor Corporation

175

25

50

75

100

125

150

175

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Switching Time vs Junction

Temperature

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Typical Performance Curves (Continued)

1600

8
IG(REF) = 1mA, RL = 1.25, TJ = 25C
VGE, GATE TO EMITTER VOLTAGE (V)

C, CAPACITANCE (pF)

FREQUENCY = 1 MHz

1200
CIES

800

CRES
400
COES
0

7
6
5
VCE = 12V
4
3
2

VCE = 6V

1
0

10

15

20

25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

12

16

20

24

28

32

QG, GATE CHARGE (nC)

Figure 13. Capacitance vs Collector to Emitter

Voltage

Figure 14. Gate Charge

430
BVCER, BREAKDOWN VOLTAGE (V)

ICER = 10mA
425
420
TJ = - 40C
TJ = 175C

415

TJ = 25C

410
405
400
395
390
10

100

1000

2000

3000

RG, SERIES GATE RESISTANCE (k)

ZthJC, NORMALIZED THERMAL RESPONSE

Figure 15. Breakdown Voltage vs Series Gate Resistance

100

0.5
0.2
0.1

10-1

0.05

t1

0.02

PD

0.01

t2

-2

10

DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC

SINGLE PULSE
10-3
10-6

10-5

10-4

10-3

10-2

10-1

T1, RECTANGULAR PULSE DURATION (s)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

2003 Fairchild Semiconductor Corporation

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Typical Performance Curves (Continued)

L
VCE

R
or
L

C
PULSE
GEN

RG

LOAD

C
RG = 1K

DUT

DUT

5V

VCE

Figure 17. Inductive Switching Test Circuit

Figure 18. tON and tOFF Switching Test Circuit

VCE

BVCES
tP
VCE

VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE

IAS
VDD
+

RG

VDD

DUT

E
tP
0V

IAS

0
0.01
tAV

Figure 19. Energy Test Circuit

2003 Fairchild Semiconductor Corporation

Figure 20. Energy Waveforms

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Test Circuit and Waveforms

REV 7 March 2002

th

JUNCTION

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /

ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3

RTHERM1

rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}

CTHERM2

RTHERM2

SABER Thermal Model

SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6

CTHERM1

CTHERM3

RTHERM3

RTHERM4

CTHERM4

RTHERM5

CTHERM5

RTHERM6

CTHERM6

tl

2003 Fairchild Semiconductor Corporation

CASE

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

SPICE Thermal Model

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FAST
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
E2CMOSTM
HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrench
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHER
OPTOLOGIC
SMART START
OPTOPLANAR

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2