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ListofsemiconductormaterialsWikipedia,thefreeencyclopedia

Listofsemiconductormaterials
FromWikipedia,thefreeencyclopedia

Semiconductormaterialsarenominallysmallbandgapinsulators.Thedefiningpropertyofasemiconductor
materialisthatitcanbedopedwithimpuritiesthatalteritselectronicpropertiesinacontrollableway.
Becauseoftheirapplicationinthecomputerandphotovoltaicindustryindevicessuchastransistors,lasers
andsolarcellsthesearchfornewsemiconductormaterialsandtheimprovementofexistingmaterialsisan
importantfieldofstudyinmaterialsscience.
Mostcommonlyusedsemiconductormaterialsarecrystallineinorganicsolids.Thesematerialsareclassified
accordingtotheperiodictablegroupsoftheirconstituentatoms.
Differentsemiconductormaterialsdifferintheirproperties.Thus,incomparisonwithsilicon,compound
semiconductorshavebothadvantagesanddisadvantages.Forexample,galliumarsenide(GaAs)hassixtimes
higherelectronmobilitythansilicon,whichallowsfasteroperationwiderbandgap,whichallowsoperationof
powerdevicesathighertemperatures,andgiveslowerthermalnoisetolowpowerdevicesatroomtemperature
itsdirectbandgapgivesitmorefavorableoptoelectronicpropertiesthantheindirectbandgapofsiliconitcan
bealloyedtoternaryandquaternarycompositions,withadjustablebandgapwidth,allowinglightemissionat
chosenwavelengths,andallowinge.g.matchingtowavelengthswithlowestlossesinopticalfibers.GaAscan
bealsogrowninasemiinsulatingform,whichissuitableasalatticematchinginsulatingsubstrateforGaAs
devices.Conversely,siliconisrobust,cheap,andeasytoprocess,whereasGaAsisbrittleandexpensive,and
insulationlayerscannotbecreatedbyjustgrowinganoxidelayerGaAsisthereforeusedonlywheresiliconis
notsufficient.[1]
Byalloyingmultiplecompounds,somesemiconductormaterialsaretunable,e.g.,inbandgaporlattice
constant.Theresultisternary,quaternary,orevenquinarycompositions.Ternarycompositionsallowadjusting
thebandgapwithintherangeoftheinvolvedbinarycompoundshowever,incaseofcombinationofdirectand
indirectbandgapmaterialsthereisaratiowhereindirectbandgapprevails,limitingtherangeusablefor
optoelectronicse.g.AlGaAsLEDsarelimitedto660nmbythis.Latticeconstantsofthecompoundsalsotend
tobedifferent,andthelatticemismatchagainstthesubstrate,dependentonthemixingratio,causesdefectsin
amountsdependentonthemismatchmagnitudethisinfluencestheratioofachievableradiative/nonradiative
recombinationsanddeterminestheluminousefficiencyofthedevice.Quaternaryandhighercompositions
allowadjustingsimultaneouslythebandgapandthelatticeconstant,allowingincreasingradiantefficiencyat
widerrangeofwavelengthsforexampleAlGaInPisusedforLEDs.Materialstransparenttothegenerated
wavelengthoflightareadvantageous,asthisallowsmoreefficientextractionofphotonsfromthebulkofthe
material.Thatis,insuchtransparentmaterials,lightproductionisnotlimitedtojustthesurface.Indexof
refractionisalsocompositiondependentandinfluencestheextractionefficiencyofphotonsfromthe
material.[2]

Contents
1Typesofsemiconductormaterials
2Tableofsemiconductormaterials
3Tableofsemiconductoralloysystems
4Seealso
5References

Typesofsemiconductormaterials
GroupIVelementalsemiconductors
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GroupIVcompoundsemiconductors
GroupVIelementalsemiconductors
IIIVsemiconductors(Seealso:Template:IIIVcompounds):Crystallizingwithhighdegreeof
stoichiometry,mostcanbeobtainedasbothntypeandptype.Manyhavehighcarriermobilitiesand
directenergygaps,makingthemusefulforoptoelectronics.
IIVIsemiconductors:usuallyptype,exceptZnTeandZnOwhichisntype
IVIIsemiconductors
IVVIsemiconductors
IVVIsemiconductors
VVIsemiconductors
IIVsemiconductors
IIIIVI2semiconductors
Oxides
Layeredsemiconductors
Magneticsemiconductors
Organicsemiconductors
Chargetransfercomplexes
Others

Tableofsemiconductormaterials
Group

IV

IV

Elem.

Material

Diamond

Silicon

Formula

Si

Band
gap
(eV)

5.47[3][4]

1.12[3][4]

Gaptype

Description

indirect

Excellentthermal
conductivity.
Superiormechanical
andoptical
properties.
Extremelyhigh
mechanicalquality
factor.[5]

indirect

Usedinconventional
crystallinesilicon(c
Si)solarcells,andin
itsamorphousform
asamorphoussilicon
(aSi)inthinfilm
solarcells.Most
common
semiconductor
materialin
photovoltaics
dominates
worldwidePV
MARKET easy
tofabricategood
electricaland
mechanical
properties.Forms
highqualitythermal
oxideforinsulation
purposes.
Usedinearlyradar
detectiondiodesand

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firsttransistors
requireslowerpurity
thansilicon.A
substrateforhigh
efficiency
multijunction
photovoltaiccells.
Verysimilarlattice
constanttogallium
arsenide.High
puritycrystalsused
forgamma
spectroscopy.May
growwhiskers,
whichimpair
reliabilityofsome
devices.

0.67[3][4]

indirect

Graytin,Sn Sn

0.00,[6]
0.08[7]

indirect

Lowtemperature
allotrope(diamond
cubiclattice).

Silicon
carbide,3C
SiC

SiC

2.3[3]

indirect

usedforearlyyellow
LEDs

IV

Silicon
carbide,4H
SiC

SiC

3.3[3]

indirect

IV

Silicon
carbide,6H
SiC

SiC

3.0[3]

indirect

VI

Sulfur,S

S8

2.6[8]

VI

Grayselenium Se

1.74

VI

Tellurium

0.33

IIIV

Boronnitride,
BN
cubic

6.36[9]

indirect

potentiallyusefulfor
ultravioletLEDs

IIIV

Boronnitride,
BN
hexagonal

5.96[9]

quasidirect

potentiallyusefulfor
ultravioletLEDs

IIIV

Boronnitride
nanotube

BN

~5.5

IIIV

Boron
phosphide

BP

Boron
arsenide

Boron
arsenide

IV

Germanium

IV

IV

IIIV

IIIV

Ge

Te

BAs

B12As2

1.5

3.47

usedforearlyblue
LEDs

Usedinselenium
rectifiers.

indirect

indirect

Resistanttoradiation
damage,possible
applicationsin
betavoltaics.

indirect

Resistanttoradiation
damage,possible
applicationsin
betavoltaics.
Piezoelectric.Not
usedonitsownasa
semiconductorAlN

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IIIV

Aluminium
nitride

IIIV

Aluminium
phosphide

AlP

2.45[4]

indirect

IIIV

Aluminium
arsenide

AlAs

2.16[4]

indirect

IIIV

Aluminium
antimonide

AlSb

1.6/2.2[4]

indirect/direct

IIIV

IIIV

Gallium
nitride

Gallium
phosphide

AlN

6.28[3]

direct

GaN

GaP

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3.44[3][4]

2.26[3][4]

closeGaAlN
possiblyusablefor
ultravioletLEDs.
Inefficientemission
at210nmwas
achievedonAlN.

direct

problematictobe
dopedtoptype,p
dopingwithMgand
annealingallowed
firsthighefficiency
blueLEDs[2]and
bluelasers.Very
sensitivetoESD.
Insensitiveto
ionizingradiation,
suitablefor
spacecraftsolar
panels.GaN
transistorscan
operateathigher
voltagesandhigher
temperaturesthan
GaAs,usedin
microwavepower
amplifiers.When
dopedwithe.g.
manganese,becomes
amagnetic
semiconductor.

indirect

Usedinearlylowto
mediumbrightness
cheap
red/orange/green
LEDs.Used
standaloneorwith
GaAsP.Transparent
foryellowandred
light,usedas
substrateforGaAsP
red/yellowLEDs.
DopedwithSorTe
forntype,withZn
forptype.PureGaP
emitsgreen,
nitrogendopedGaP
emitsyellowgreen,
ZnOdopedGaP
emitsred.
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IIIV

IIIV

IIIV

IIIV

IIIV

ListofsemiconductormaterialsWikipedia,thefreeencyclopedia

Gallium
arsenide

Gallium
antimonide

GaAs

GaSb

Indiumnitride InN

Indium
phosphide

Indium
arsenide

InP

InAs

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1.43[3][4]

0.726[3][4]

0.7[3]

1.35[3]

0.36[3]

direct

secondmost
commoninuseafter
silicon,commonly
usedassubstratefor
otherIIIV
semiconductors,e.g.
InGaAsand
GaInNAs.Brittle.
Lowerholemobility
thanSi,Ptype
CMOStransistors
unfeasible.High
impuritydensity,
difficulttofabricate
smallstructures.
UsedfornearIR
LEDs,fast
electronics,and
highefficiencysolar
cells.Verysimilar
latticeconstantto
germanium,canbe
grownon
germanium
substrates.

direct

Usedforinfrared
detectorsandLEDs
and
thermophotovoltaics.
DopednwithTe,p
withZn.

direct

Possibleuseinsolar
cells,butptype
dopingdifficult.
Usedfrequentlyas
alloys.

direct

Commonlyusedas
substratefor
epitaxialInGaAs.
Superiorelectron
velocity,usedin
highpowerand
highfrequency
applications.Usedin
optoelectronics.

direct

Usedforinfrared
detectorsfor1
3.8m,cooledor
uncooled.High
electronmobility.
InAsdotsinInGaAs
matrixcanserveas
quantumdots.
Quantumdotsmay
beformedfroma
monolayerofInAs
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onInPorGaAs.
Strongphoto
Demberemitter,
usedasaterahertz
radiationsource.

IIIV

IIVI

IIVI

Indium
antimonide

Cadmium
selenide

Cadmium
sulfide

InSb

CdSe

CdS

0.17[3]

1.74[4]

2.42[4]

direct

Usedininfrared
detectorsand
thermalimaging
sensors,high
quantumefficiency,
lowstability,require
cooling,usedin
militarylongrange
thermalimager
systems.AlInSb
InSbAlInSb
structureusedas
quantumwell.Very
highelectron
mobility,electron
velocityandballistic
length.Transistors
canoperatebelow
0.5Vandabove
200GHz.Terahertz
frequenciesmaybe
achievable.

direct

Nanoparticlesused
asquantumdots.
Intrinsicntype,
difficulttodopep
type,butcanbep
typedopedwith
nitrogen.Possible
usein
optoelectronics.
Testedforhigh
efficiencysolar
cells.

direct

Usedin
photoresistorsand
solarcells
CdS/Cu2Swasthe
firstefficientsolar
cell.Usedinsolar
cellswithCdTe.
Commonas
quantumdots.
Crystalscanactas
solidstatelasers.
Electroluminescent.
Whendoped,canact
asaphosphor.
Usedinsolarcells
withCdS.Usedin
thinfilmsolarcells

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IIVI

IIVI,
oxide

IIVI

IIVI

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Cadmium
telluride

Zincoxide

Zincselenide

Zincsulfide

CdTe

ZnO

ZnSe

ZnS

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1.49[4]

3.37[4]

2.7[4]

direct

andothercadmium
telluride
photovoltaicsless
efficientthan
crystallinesilicon
butcheaper.High
electroopticeffect,
usedinelectrooptic
modulators.
Fluorescentat
790nm.
Nanoparticlesusable
asquantumdots.

direct

Photocatalytic.
Bandwidthtunable
from3to4eVby
alloyingwith
magnesiumoxide
andcadmiumoxide.
Intrinsicntype,p
typedopingis
difficult.Heavy
aluminium,indium,
orgalliumdoping
yieldstransparent
conductivecoatings
ZnO:Alisusedas
windowcoatings
transparentinvisible
andreflectivein
infraredregionand
asconductivefilms
inLCDdisplaysand
solarpanelsasa
replacementof
indiumtinoxide.
Resistanttoradiation
damage.Possible
useinLEDsand
laserdiodes.
Possibleusein
randomlasers.

direct

Usedforbluelasers
andLEDs.Easyto
ntypedoping,p
typedopingis
difficultbutcanbe
donewithe.g.
nitrogen.Common
opticalmaterialin
infraredoptics.

3.54/3.91[4] direct

Bandgap3.54eV
(cubic),3.91
(hexagonal).Canbe
dopedbothntype
andptype.Common
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scintillator/phosphor
whensuitably
doped.

IIVI

Zinctelluride

ZnTe

2.25[4]

direct

IVII

Cuprous
chloride

CuCl

3.4[10]

direct

IVI

IVVI

IVVI

IVVI

Coppersulfide Cu2S

Leadselenide PbSe

Lead(II)
sulfide

PbS

Leadtelluride PbTe

1.2

0.27

Canbegrownon
AlSb,GaSb,InAs,
andPbSe.Usedin
solarcells,
compomentsof
microwave
generators,blue
LEDsandlasers.
Usedin
electrooptics.
Togetherwith
lithiumniobateused
togenerateterahertz
radiation.

direct

ptype,Cu2S/CdS
wasthefirstefficient
thinfilmsolarcell

direct

Usedininfrared
detectorsforthermal
imaging.
Nanocrystalsusable
asquantumdots.
Goodhigh
temperature
thermoelectric
material.

0.37

Mineralgalena,first
semiconductorin
practicaluse,usedin
cat'swhisker
detectorsthe
detectorsareslow
duetohighdielectric
constantofPbS.
Oldestmaterialused
ininfrareddetectors.
Atroomtemperature
candetectSWIR,
longerwavelengths
requirecooling.

0.32

Lowthermal
conductivity,good
thermoelectric
materialatelevated
temperaturefor
thermoelectric
generators.
Tinsulde(SnS)isa
semiconductorwith
directopticalband

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gapof1.3eVand
absorption
coefcientabove104
cm1forphoton
energiesabove1.3
eV.Itisaptype
semiconductor
direct/indirect whoseelectrical
propertiescanbe
tailoredbydoping
andstructural
modicationandhas
emergedasoneof
thesimple,nontoxic
andaffordable
materialforthin
lmssolarcells
sinceadecade.

IVVI

Tinsulfide

SnS

1.3/1.0[11]

IVVI

Tinsulfide

SnS2

2.2

IVVI

Tintelluride

SnTe

Complexband
structure.

IVVI

Leadtin
telluride

PbSnTe

Usedininfrared
detectorsandfor
thermalimaging.

IVVI

Thalliumtin
telluride

Tl2SnTe5

Thallium
germanium
telluride

Tl2GeTe5

IVVI

VVI,
layered

Bismuth
telluride

Bi2Te3

IIV

Cadmium
phosphide

Cd3P2

Efficient
thermoelectric
materialnearroom
temperaturewhen
alloyedwith
seleniumor
antimony.Narrow
gaplayered
semiconductor.High
electrical
conductivity,low
thermal
conductivity.
Topological
insulator.

Ntypeintrinsic
semiconductor.Very
highelectron
mobility.Usedin
infrareddetectors,
photodetectors,
dynamicthinfilm
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IIV

Cadmium
arsenide

IIV

Cadmium
antimonide

Cd3Sb2

IIV

Zinc
phosphide

Zn3P2

IIV

Zincarsenide

Zn3As2

Cd3As2

IIV

Zinc
antimonide

Zn3Sb2

Oxide

Titanium
dioxide,
anatase

TiO2

Oxide

2
2

Oxide

pressuresensors,and
magnetoresistors.
Recent
measurements
suggestthat3D
Cd3As2isactuallya
zerobandgapDirac
semimetalinwhich
electronsbehave
relativisticallyasin
graphene.[12]

0.14

Usedininfrared
detectorsand
thermalimagers,
transistors,and
magnetoresistors.
3.2

indirect

photocatalytic,n
type

Titanium
TiO2
dioxide,rutile

3.02

direct

photocatalytic,n
type

Titanium
dioxide,
brookite

2.96

[13]

TiO2

Oxide

Copper(I)
oxide

Cu2O

2.17[14]

Oneofthemost
studied
semiconductors.
Manyapplications
andeffectsfirst
demonstratedwithit.
Formerlyusedin
rectifierdiodes,
beforesilicon.

Oxide

Copper(II)
oxide

CuO

1.2

Ptype
semiconductor.

1.3

HighSeebeck
coefficient,resistant
tohightemperatures,
promising
thermoelectricand
thermophotovoltaic
applications.
Formerlyusedin
URDOXresistors,
conductingathigh
temperature.
Resistanttoradiation
damage.

Oxide

Uranium
dioxide

UO2

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Uranium
trioxide

UO3

Oxide

Bismuth
trioxide

Bi2O3

Oxide

Tindioxide

SnO2

Oxide

Oxide

Oxide

Barium
titanate

Strontium
titanate

BaTiO3

SrTiO3

Ionicconductor,
applicationsinfuel
cells.
3.7

Oxygendeficientn
typesemiconductor.
Usedingassensors.

Ferroelectric,
piezoelectric.Used
insomeuncooled
thermalimagers.
Usedinnonlinear
optics.

3.3

Ferroelectric,
piezoelectric.Used
invaristors.
Conductivewhen
niobiumdoped.

Oxide

Lithium
niobate

LiNbO3

Ferroelectric,
piezoelectric,shows
Pockelseffect.Wide
usesinelectrooptics
andphotonics.

Oxide

Lanthanum
copperoxide

La2CuO4

superconductive
whendopedwith
bariumorstrontium

Layered

Lead(II)
iodide

PbI2

Layered

Molybdenum
disulfide

MoS2

Layered

Gallium
selenide

GaSe

Layered

Tinsulfide

SnS

Layered

Bismuth
sulfide

Bi2S3

Magnetic,
diluted
3
[15]
(DMS)

Gallium
manganese
arsenide

GaMnAs

Magnetic,
diluted
3
(DMS)

Indium
manganese
arsenide

InMnAs

Magnetic,
diluted
3
(DMS)

Cadmium
manganese
telluride

CdMnTe

Magnetic,
diluted
3
(DMS)

Lead
manganese
telluride

PbMnTe

Magnetic 4

Lanthanum
calcium

La0.7Ca0.3MnO3

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2.1

indirect

Photoconductor.
Usesinnonlinear
optics.

colossal
magnetoresistance
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manganate
Magnetic 2

Iron(II)oxide FeO

Magnetic 2

Nickel(II)
oxide

NiO

Magnetic 2

Europium(II)
oxide

EuO

ferromagnetic

Magnetic 2

Europium(II)
sulfide

EuS

ferromagnetic

Magnetic 2

Chromium(III) CrBr
3
bromide

other

Copper
indium
selenide,CIS

other

Silvergallium AgGaS
2
sulfide

other

Zincsilicon
phosphide

ZnSiP2

other

Arsenic
sulfide
Orpiment

As2S3

semiconductivein
bothcrystallineand
glassystate

other

Arsenic
sulfide
Realgar

As4S4

semiconductivein
bothcrystallineand
glassystate
Usedininfrared
detectorsfor1
5m.Usedin
infraredastronomy.
Highstability,low
drift,usedfor
measurements.Low
quantumefficiency.

CuInSe2

other

Platinum
silicide

PtSi

other

Bismuth(III)
iodide

BiI3

other

Mercury(II)
iodide

antiferromagnetic

direct
nonlinearoptical
properties

Usedinsome
gammarayandx
raydetectorsand
imagingsystems
operatingatroom
temperature.Usedas
arealtimexray
imagesensor.

Thallium(I)
bromide

TlBr

other

Silversulfide

Ag2S

Irondisulfide

direct[16][17]

HgI2

3.64.0
eV

Usedinsome
gammarayandx
raydetectorsand
imagingsystems
operatingatroom
temperature.

other

other

antiferromagnetic

FeS2

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0.9[18]

0.95

Mineralpyrite.Used
inlatercat'swhisker
detectors,
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investigatedforsolar
cells.

other

other

other

Copperzinc
tinsulfide,
CZTS

Cu2ZnSnS4

1.49

Copperzinc
Cu1.18Zn0.40Sb1.90S7.2 2.2[19]
antimony
sulfide,CZAS

Coppertin
sulfide,CTS

Cu2SnS3

0.91

direct

Cu2ZnSnS4is
derivedfromCIGS,
replacingthe
Indium/Galliumwith
earthabundant
Zinc/Tin.

direct

Copperzinc
antimonysulfideis
derivedfromcopper
antimonysulfide
(CAS),afamatinite
classofcompound.

direct

Cu2SnS3isptype
semiconductorandit
canbeusedinthin
filmsolarcell
application.

Tableofsemiconductoralloysystems
Thefollowingsemiconductingsystemscanbetunedtosomeextent,andrepresentnotasinglematerialbuta
classofmaterials.

Group

Elem.

Material
class

Formula

IV

Silicon
Si1xGex
germanium

IV

Silicontin

IIIV

Si1xSnx

Aluminium
AlxGa1xAs
gallium
arsenide

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Band
gap
(eV)
lower

upper

Gaptype

Description

0.67

1.11[3]

indirect

adjustablebandgap,
allowsconstructionof
heterojunctionstructures.
Certainthicknessesof
superlatticeshavedirect
bandgap.[20]

1.0

1.11

indirect

Adjustablebandgap.[21]

1.42

2.16[3]

directbandgapforx<0.4
(correspondingto1.42
1.95eV)canbelattice
matchedtoGaAs
substrateoverentire
compositionrangetends
tooxidizendopingwith
Si,Se,Tepdopingwith
Zn,C,Be,Mg.[2]Canbe
direct/indirect usedforinfraredlaser
diodes.Usedasabarrier
layerinGaAsdevicesto
confineelectronstoGaAs
(seee.g.QWIP).AlGaAs
withcompositioncloseto
AlAsisalmost
transparenttosunlight.
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UsedinGaAs/AlGaAs
solarcells.

IIIV

IIIV

Indium
gallium
arsenide

Indium
gallium
phosphide

InxGa1xAs

InxGa1xP

IIIV

Aluminium
AlxIn1xAs
indium
arsenide

IIIV

Aluminium
AlxIn1xSb
indium
antimonide

Gallium
arsenide
nitride

IIIV

Gallium
arsenide
phosphide

IIIV

Gallium
arsenide
GaAsSb
antimonide

IIIV

0.36

Welldevelopedmaterial.
Canbelatticematchedto
InPsubstrates.Usein
infraredtechnologyand
thermophotovoltaics.
Indiumcontent
determineschargecarrier
density.Forx=0.015,
InGaAsperfectlylattice
matchesgermaniumcan
beusedinmultijunction
photovoltaiccells.Used
ininfraredsensors,
avalanchephotodiodes,
laserdiodes,opticalfiber
communicationdetectors,
andshortwavelength
infraredcameras.

1.43

direct

2.26

usedforHEMTandHBT
structuresandhigh
efficiencymultijunction
solarcellsfore.g.
direct/indirect satellites.Ga0.5In0.5Pis
almostlatticematchedto
GaAs,withAlGaInused
forquantumwellsforred
lasers.

2.16

Bufferlayerin
metamorphicHEMT
transistors,adjusting
latticeconstantbetween
GaAssubstrateand
direct/indirect
GaInAschannel.Can
formlayered
heterostructuresactingas
quantumwells,ine.g.
quantumcascadelasers.

1.43

2.26

Usedinred,orangeand
yellowLEDs.Often
direct/indirect
grownonGaP.Canbe
dopedwithnitrogen.

0.7

1.42[3]

direct

1.35

0.36

GaAsN

GaAsP

Usedinbluelaserdiodes,
ultravioletLEDs(down
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IIIV

Aluminium
AlGaN
gallium
nitride

3.44

6.28

direct

IIIV

Aluminium
gallium
AlGaP
phosphide

2.26

2.45

indirect

Usedinsomegreen
LEDs.

direct

InxGa1xN,xusually
between0.020.3(0.02
fornearUV,0.1for
390nm,0.2for420nm,
0.3for440nm).Canbe
grownepitaxiallyon
sapphire,SiCwafersor
silicon.Usedinmodern
blueandgreenLEDs,
InGaNquantumwellsare
effectiveemittersfrom
greentoultraviolet.
Insensitivetoradiation
damage,possibleusein
satellitesolarcells.
Insensitivetodefects,
toleranttolattice
mismatchdamage.High
heatcapacity.

IIIV

IIIV

IIIV

IIIV

IIIV

Indium
gallium
nitride

Indium
arsenide
InAsSb
antimonide

Indium
gallium
InGaSb
antimonide

InGaN

Aluminium
gallium
AlGaInP
indium
phosphide

3.4

to250nm),and
AlGaN/GaNHEMTs.
Canbegrownon
sapphire.Usedin
heterojunctionswithAlN
andGaN.

alsoInAlGaP,InGaAlP,
AlInGaPforlattice
matchingtoGaAs
substratestheInmole
fractionisfixedatabout
0.48,theAl/Garatiois
adjustedtoachieveband
gapsbetweenabout1.9
direct/indirect and2.35eVdirector
indirectbandgaps
dependingonthe
Al/Ga/Inratiosusedfor
waveengthsbetween
560650nmtendsto
formorderedphases
duringdeposition,which
hastobeprevented[2]

Aluminium
gallium
AlGaAsP
arsenide

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phosphide
IIIV

IIIV

IIIV

IIIV

IIIV

IIIV

IIIV

IIIV

IIIV

IIIV

IIVI

Indium
gallium
arsenide
phosphide

Indium
gallium
InGaAsSb
arsenide
antimonide

Usein
thermophotovoltaics.

Indium
arsenide
InAsSbP
antimonide
phosphide

Usein
thermophotovoltaics.

Aluminium
indium
AlInAsP
arsenide
phosphide

Aluminium
gallium
AlGaAsN
arsenide
nitride

Indium
gallium
arsenide
nitride

Indium
aluminium
InAlAsN
arsenide
nitride

Gallium
arsenide
GaAsSbN
antimonide
nitride

Gallium
indium
nitride
GaInNAsSb
arsenide
antimonide

Gallium
indium
arsenide
GaInAsSbP
antimonide
phosphide

Cadmium
zinc
telluride,
CZT

InGaAsP

InGaAsN

CdZnTe

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CanbegrownonInAs,
GaSb,andother
substrates.Canbelattice
matchedbyvarying
composition.Possibly
usableformidinfrared
LEDs.

1.4

2.2

direct

Efficientsolidstatexray
andgammaraydetector,
canoperateatroom
temperature.High
electroopticcoefficient.
Usedinsolarcells.Can
beusedtogenerateand
detectterahertzradiation.
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Canbeusedasasubstrate
forepitaxialgrowthof
HgCdTe.

IIVI

IIVI

IIVI

other

Mercury
cadmium
telluride

HgCdTe

Mercury
zinc
telluride

HgZnTe

Mercury
zinc
selenide

HgZnSe

Copper
indium
gallium
selenide,
CIGS

Cu(In,Ga)Se2 1

1.5

Knownas"MerCad".
Extensiveuseinsensitive
cooledinfraredimaging
sensors,infrared
astronomy,andinfrared
detectors.Alloyof
mercurytelluride(a
semimetal,zeroband
gap)andCdTe.High
electronmobility.The
onlycommonmaterial
capableofoperatingin
both35mand12
15matmospheric
windows.Canbegrown
onCdZnTe.

2.25

Usedininfrared
detectors,infrared
imagingsensors,and
infraredastronomy.
Bettermechanicaland
thermalpropertiesthan
HgCdTebutmore
difficulttocontrolthe
composition.More
difficulttoformcomplex
heterostructures.

1.7

direct

CuInxGa1xSe2.
Polycrystalline.Usedin
thinfilmsolarcells.

Seealso
Heterojunction
Organicsemiconductors
Semiconductorcharacterizationtechniques

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