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LT Spice Experiments

1. The document describes solutions to four VLSI lab assignment questions involving extracting transistor threshold voltages, estimating transconductance, simulating a CMOS inverter, and studying the effect of varying the ratio of NMOS to PMOS widths on the inverter characteristics. 2. Steps are provided to simulate transistor I-V characteristics, calculate threshold voltages and transconductance, design a CMOS inverter, and sweep the ratio of NMOS to PMOS widths to analyze the transfer characteristics. 3. Key results are reported such as the threshold voltages of NMOS and PMOS, transconductance plots, inverter transfer curves and transient response, and how the inverter switching threshold decreases with increasing ratio of N

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Sachin George Thomas
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907 views15 pages

LT Spice Experiments

1. The document describes solutions to four VLSI lab assignment questions involving extracting transistor threshold voltages, estimating transconductance, simulating a CMOS inverter, and studying the effect of varying the ratio of NMOS to PMOS widths on the inverter characteristics. 2. Steps are provided to simulate transistor I-V characteristics, calculate threshold voltages and transconductance, design a CMOS inverter, and sweep the ratio of NMOS to PMOS widths to analyze the transfer characteristics. 3. Key results are reported such as the threshold voltages of NMOS and PMOS, transconductance plots, inverter transfer curves and transient response, and how the inverter switching threshold decreases with increasing ratio of N

Uploaded by

Sachin George Thomas
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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VLSI LAB ASSIGNMENT QUESTIONS

1. Extract the Vt of NMOS and PMOS transistor from Vgs Vs Id


characteristics and estimate the variation in Vt with variation in Vbs. The
variation is between +Vdd and Vdd and establish a relation between Vbs
and Vt.
Solution:
Vt of NMOS
CIRCUIT DIAGRAM

STEPS
(1) Choose nMOS and right click and pick New MOSFET tab and select
IRLML6346.
(2) Select voltage sources for Vgs and Vdd.
(3) Set DC value of 5V to Vdd.
(4) From simulate tab, select edit simulation Cmd .

(5) On DC sweep tab select 1st source as V2 with start value :0, stop value :5
and increment 0.1.
(6) Run the file.
OUTPUT
(1) Right click on plot and select Id from add trace.
(2) Place the cursor on the plot at the point where Id starts to increase from zero.

RESULT:
Vt of NMOS obtained is 1.053V

Vt of PMOS
The same procedure can be repeated for finding Vt of PMOS
CIRCUIT DIAGRAM

RESULT :

Vt of PMOS obtained is -0.905V .


Relation between Vt and Vbs of NMOS
(1) Choose nMOS4.
(2) Select voltage sources for Vgs, Vbs and Vdd.
(3) Set DC value of 3V to Vdd.
(4) From simulate tab, select edit simulation Cmd .
(5) On DC sweep tab select 1st source to sweep as V2 with start value :-3, stop
value :5 and increment 0.1. Select 2nd source to sweep as V1 with start value
:-3, stop value :3 and increment 1.
(6) Run the file.
CIRCUIT DIAGRAM

OUTPUT
(1) Right click on plot and select Id from add trace.
(2) Place the cursor on the plot at the point where Id starts to increase from zero.
RESULT:
Vt varies as -2.7, -1.7, -0.7, 0.25, 1.25, 2.25 V as Vbs is varied from -3 to 3
in steps of 1V.

Relation between Vt and Vbs of PMOS


(1) Choose pMOS4.
(2) Select voltage sources for Vgs, Vbs and Vdd.
(3) Set DC value of -3V to Vdd.
(4) From simulate tab, select edit simulation Cmd .
(5) On DC sweep tab select 1st source to sweep as V1 with start value :-3, stop
value :5 and increment 0.01. Select 2nd source to sweep as V2 with start
value :-3, stop value :3 and increment 1.
(6) Run the file.
CIRCUIT DIAGRAM

OUTPUT
(1) Right click on plot and select Id from add trace.
(2) Place the cursor on the plot at the point where Id starts to increase from zero.

RESULT:
Vt varies as -2.2, -1.2, -0.2, 0.6, 1.6, 2.6 V as Vbs is varied from -3 to 3 in
steps of 1V.

2. Estimate and plot transconductance of nmos and pmos transistors for Vds
and Vgs variations.
Solution:
Transconductance of nmos
Circuit Diagram

Steps:
(1) Choose nmos-IRLML6346.
(2) Connect two voltage sources for gate and drain respectively.
(3) Set Vds=3V and vary Vgs from 0 to 1.3V.
(4) Obtain the plot-Id vs Vgs.
(5) Plot transconductance using the same plot by using the formula
( )
=
(
)
(6) Now set Vgs=1.3V and vary Vds.
(7) Plot Id vs Vds graph and obtain transconductance.

Output:
gm_Vgs

gm_Vds

Transconductance of pmos
Circuit Diagram

Steps:
(1) Choose pmos-IRF7404.
(2) Connect two voltage sources for gate and drain respectively.
(3) Set Vds=-20V and vary Vgs from -5 to 0V.
(4) Obtain the plot-Id vs Vgs.
(5) Plot transconductance using the same plot by using the formula
=

( )
(
)

(6) Now set Vgs=-2.5V and vary Vds.


Plot Id vs Vds graph and obtain transconductance.

Outputs:
gm_Vds

gm_Vgs

(3) Design a CMOS inverter and simulate the circuit.


Solution :
CIRCUIT DIAGRAM

STEPS
(1) Choose nmos , pmos, voltage sources for Vin and Vdd and wire them as
shown in the circuit diagram.
(2) Set DC value of 5V to Vdd.
(3) From simulate tab, select edit simulation Cmd.
(4) On DC sweep tab select 1st source as V1 with start value :0, stop value :5
and increment 0.01.
(5) Run the file to obtain transfer characteristics of the inverter.
(6) Transfer characteristics can be obtained by placing the probe on the output
node.
(7) To obtain the transient response, from simulate tab, select edit simulation
Cmd.
(8) On transient tab give stop time 10, time to start saving data 0 and maximum
time step 1.
(9) Give a pulse input to V1 by right clicking on V1,selecting advanced options
and selecting pulse input. Give Von as 5, Ton as 0.5, Tperiod as 1 and
Ncycles as 7.

(10)
Run the file. Add traces of V[n002] and V[n004] to observe transient
characteristics.

TRANSFER CHARACTERISTICS

TRANSIENT RESPONSE

RESULT :
A CMOS inverter circuit has been designed and simulated and the transfer
characteristics and transient response are observed.

4. Change the n/ p ratio from 1,210 and study the CMOS characteristics
(Vout/Vin).
Solution :
CIRCUIT DIAGRAM

STEPS
(1) Choose nmos4 , pmos4, voltage sources for Vin and Vdd and wire them as
shown in the circuit diagram.
(2) Set DC value of 5V to Vdd.
(3) From simulate tab, select edit simulation Cmd.
(4) On DC sweep tab select 1st source as V1 with start value :0, stop value :5
and increment 0.01.
(5) Right click on nmos4 and set length to 1 and width as {X}.
(6) Right click on pmos4 and set length to 1 and width to 1.
(7) In the spice directive type .step PARAM X 1u 10u 1u to swipe the width of
nmos4 from 1 to 10 thereby changing the n/ p ratio from 1,210.
(8) Run the file to obtain the transfer characteristics for various values of n/ p.

RESULT:
The transfer characteristics of inverter for values of n/ p ranging from
1,2.10 has been plotted and the switching threshold of the inverter which
was approx. 2.5V is found to reduce as n/ p is increased from 1 to 10.

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