Planar Transmission Line Method For Characterization
Planar Transmission Line Method For Characterization
PLANAR TRANSMISSION LINE METHOD FOR CHARACTERIZATION OF PRINTED CIRCUIT BOARD DIELECTRICS
J. Zhang
CISCO Systems, Inc.
CA, USA
M. Y. Koledintseva
Missouri University of Science & Technology
Rolla, MO, USA
G. Antonini
Department of Electrical Engineering
University of LAquila
Poggio di Roio, 67040 AQ, Italy
J. L. Drewniak
Missouri University of Science & Technology
Rolla, MO 65401, USA
A. Orlandi
Department of Electrical Engineering
University of LAquila
Poggio di Roio, 67040 AQ, Italy
K. N. Rozanov
Institute for Theoretical and Applied Electromagnetics
Russian Academy of Sciences
Moscow 125412, Russia
Corresponding author: M. Y. Koledintseva ([email protected]).
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permittivity and loss tangent) used in the full-wave model come from a
PCB vendor with only one or two frequency points. However, dielectric
representations with either one or two frequency points for a PCB
substrate are not sufficient for accurate full-wave simulations, since
complex permittivity of a PCB substrate may vary substantially over
the wide frequency range. Besides, dielectric representation with only
one or two points may result in causality issues in full-wave modeling,
which causes the divergence problem in time-domain simulations.
Numerous techniques are known for characterization of dielectric
properties over different frequency bands [413]. Each technique
benefits a different type of materials over a certain frequency range.
The resonance techniques widely used in the past several decades to
characterize dielectric materials are accurate, but are narrowband [4
6]. Reference [7] extends the resonance techniques to a wideband
application by designing a complex structure on a PCB to cover
multi-resonant frequency points. The dielectric properties at the
corresponding frequency points are tuned by matching the numeric
resonant peak to the measurements. The procedure is complicated, and
the numerical tuning is cumbersome. In addition, this approach does
not measure complex permittivity of a material in the frequency range
of interest, since dielectric loss cannot be obtained. As for the coaxial
line techniques, they are good for measuring wideband properties
of materials homogeneously distributed over the cross-section of the
line [8], but they are not suitable for layered materials. Besides, it is
difficult to de-embed port effects in this type of techniques. Though
it is possible to retrieve dielectric constant and loss tangent of layered
materials directly from measurements using an impedance analyzer,
this technique is available only at low frequencies with a relatively
narrow frequency span [11].
A short-pulse propagation time-domain technique is used to obtain
dielectric properties for PCB substrate materials in wide range up
to 30 GHz [12]. However, this procedure is complex, while practical
manufacturing capabilities and an inherent signal-to-noise ratio of
time-domain measurement limit application possibilities as well. A
technique for wideband extraction of one-term Debye or Lorentizian
behavior of permittivity for PCB substrates directly from frequencydomain S-parameter measurement has been proposed in [13]. It is
based on using different planar transmission line structures, and is
applied to extraction of dielectric properties up to 5 GHz. Another
approach to extract dielectric properties [14] is based on measuring
dielectric loss and conductor loss for transmission lines, and it was also
tested up to 5 GHz. For an FR-4 material, the approximation of its
permittivity by single-term Debye frequency dependence at frequencies
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n
X
i=1
je
i
,
1 + ji 0
(1)
271
arccos h A D
=
.
(2)
l
if the network is asymmetrical in the general case [33].
The accuracy of the permittivity extraction strongly depends on
the accuracy of the measured raw S-parameters, length of the line l,
and correct separation of dielectric loss d from conductor loss c ,
since total loss is = c + d . If a zero Through-Reflect-Line (TRL)
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|cm ce |
,
max |cm |
d =
|dm de |
,
max dm
and =
| m e |
.
max | m |
(4)
273
range of 240400, and the median value of 320 has been chosen as the
optimal population size. The cross-over parameter is chozen as 75%.
Another way to simulate dielectric loss and conductor loss is to
assume that the dielectric part is proportional
to frequency (d ),
(6)
= a + b .
The coefficients a and b can be retrieved using another genetic
algorithm to approximate the dependence () retrieved from Sparameter measurements. If surface roughness is included in conductor
loss, the frequency dependence of total loss is more complex than (6),
and roughness
may contribute to dielectric -term as well as smooth
conductor -term, and higher powers of frequency [35]. How to
correctly split conductor loss contributions from dielectric loss in a
rough conductor is a serious separate problem, and it is beyond the
scope of the present paper.
3. FORMULATION FOR PLANAR TRANSMISSION
LINES
Analytical or semi-empirical formulas known from literature are used
for conversion of complex propagation constant to dielectric parameters
of parallel-plate, stripline, and microstrip structures. Though these
models are generally approximate, they are accurate enough for
dielectric parameter extraction in the frequency range of interest,
where TEM (or quasi-TEM) propagation takes place. Limitations
of parameter extraction for the transmission line structures under
consideration are discussed.
It should be mentioned that though the types of lines, other than
those with TEM (quasi-TEM) modes, have not been considered in this
particular paper, the presented methodology can be extended to the
other regular waveguide structures. It is important that and are
extracted through measurements, and an adequate model correlating
these propagation parameters with dielectric properties of the media
under study should be available [36, 37].
3.1. Parallel-plate Structure
A parallel-plate structure shown in Fig. 1 is the simplest transmission
line. For the TM0 mode in the parallel-plate waveguide, Ez = 0,
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Zhang et al.
= 0 0 r 0r
(7)
where r = 1 is the relative permeability of the non-magnetic substrate
material, and 0r is the real part of r in (1), which is an interim value
during the GA extraction. If conductors of the parallel-plate line are
smooth, and if there is the only TEM mode propagating, then the
conductor loss is [39]
Rs
c =
,
(8)
d
q
p
where = 120 0r is the TEM wave impedance, Rs = 0 /(2c ) is
r
275
tan
00
, where tan = r0 .
2
r
(9)
d = 0 0 0r 4 1 + (tan )2 sin(/2).
(10)
At the same time, the propagation constant will be calculated as
p
p
= 0 0 0r 4 1 + (tan )2 cos(/2).
(11)
These formulas are derived from the rigorous expressions for complex
propagation constant for TEM wave propagating in a dielectric
medium.
3.2. Microstrip Transmission Line
The calculation of and for a microstrip line (Fig. 2), is analogous
to that for the parallel-plate geometry.
Strictly speaking, the
electromagnetic field in a microstrip is a hybrid TE-TM mode, and
wave propagation is not completely contained within a substrate.
However, it can be considered as a quasi-TEM mode for the structures
with electrically thin dielectric substrates (h/diel 1). The phase
term for the microstrip line filled with a comparatively low-loss
dielectric is
p
= 0 0 0e ,
(12)
where the effective permittivity 0e is used instead of real part of
permittivity 0r for the substrate dielectric. The expression for effective
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Zhang et al.
0 0 0e 1
0
d =
0 r tan ,
p
(15)
2
0e r 1
00
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Zhang et al.
4.56
Parallel-plate
Microstrip
4.54
4.5
'
4.52
4.48
4.46
4.42
0.1
0.5
Parallel-plate
Microstrip
0.4
Frequency (GHz)
0.3
0.2
'' including
r
e
4.44
0.1
0.1
0
5
Frequency (GHz)
s
4.504
4.530
4.420
4.398
(ps)
46.37
57.22
e (mS/m)
2.531
2.351
279
0
-2
-1
-2
-6
|S21| (dB)
|S 21 | (dB)
-4
-8
-3
-10
-4
-12
-5
-14
-16
FDTD modeled
Measured
0.5
1.5
2
2.5
3
3.5
Frequency (GHz)
FDTD modeled
Measured
4
4.5
Figure 5.
|S21 | comparison
between the measurement and
the full-wave modeling for the
parallel-plate transmission line.
-6
0.5
1.5
2
2.5
3
3.5
Frequency (GHz)
4.5
Figure 6.
|S21 | comparison
between the measurement and
the full-wave modeling for the
microstrip transmission line.
microstrip lines. The SMAs are modeled as thin-wires [44], and the
surface impedance boundary condition algorithm is used to model the
conductor loss [45]. Figs. 5 and 6 show that the maximum difference
between the FDTD simulated and measured |S21 | for both the parallelplate structure and the microstrip structure in the frequency range
from 100 MHz to 5 GHz is less than 1 dB. The SMA port effects
are partially included in the extracted Debye parameters, and this
may lead to discrepancy between the full-wave modeling and the
measurements.
4.2. Stripline
A TRL calibration pattern and a test line for the study of stripline
structure are designed in an 8-layer PCB on layer 5 with solid reference
plane on layers 4 and 6. Three line standards are built to support three
different frequency bands of 200 MHz930 MHz, 930 MHz4.3 GHz, and
4.3 GHz20 GHz. The PCB board dimensions are 264 mm (length)
248 mm (width) 2.69 mm (thickness). The total length of the
stripline after moving the TRL calibration reference plane back into
the test line is 202.6 mm. The cross-sectional dimensions of the test
line, referring to Fig. 3, are t = 0.03 mm, b = 0.75 mm, w = 0.32 mm,
d = 7.3 mm and s = 0.007 mm. The frequency range of interest is
from 200 MHz to 20 GHz. According to [46, 47], the calculated cut-off
frequency of the first higher-order mode of the stripline is 82 GHz, and
the stripline supports TEM wave propagation over the entire frequency
range of interest.
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Zhang et al.
s2
4.068
1 (ps)
82.12
2 (ps)
5.712
3.95
e (mS/m)
1.136
4.25
Stripline
4.2
r'
4.15
4.1
4.05
4
Stripline 0.2
r''
0.15
0.1
0.1
1
Frequency (GHz)
10
0.05
20
281
substrate material are given in Table 2, and the real and the imaginary
parts of the extracted permittivity are plotted in Fig. 7.
These Debye parameters are used in a full-wave simulation tool,
which is the CST Microwave Studio realized on the finite integration
technique (FIT) [48]. The magnitude and phase of S21 obtained
by the numerical simulation and measurements are shown in Figs. 8
and 9, respectively. The maximum difference of the |S21 | is less than
0.7 dB over the frequency range up to 20 GHz, and the phases almost
coincide. This comparison validates the correctness of the extracted
Debye parameters and confirms that the proposed method works well.
In this extraction, the port effects are removed.
0
200
-2
150
100
S21 phase ( o )
|S21| (dB)
-4
-6
-8
-10
-12
-14
FIT Modeled
Measured
50
0
-50
-100
FIT Modeled
Measured
2
4
6
-150
8
10
12
14
Frequency (GHz)
16
18
20
Figure 8.
|S21 | comparison
between the measurement and
the full-wave modeling for the
stripline structure.
-200
8
10
12
14
Frequency (GHz)
16
18
20
5. CONCLUSIONS
The presented approach to extract Debye parameters for dispersive
dielectric substrates in planar transmission line structures is based
on approximating complex propagation constant by tuning the
Debye parameters in the analytical/empirical models for a dielectric.
Dielectric and conductor loss, obtained from measured S-parameters,
serve as target data to be approximated in a genetic algorithm.
Parameter extraction for both one- and two-term Debye dependencies
has been tested in the study.
Full-wave FDTD/FIT modeling
that used the extracted Debye terms and the measurements were
compared, and good agreement was achieved. The proposed approach
is straightforward and convenient to use. However, the accuracy of the
extracted Debye parameters is directly related to the accuracy of the
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Zhang et al.
S-parameters measurement, which can be seen from the 5-GHz and the
20-GHz test cases. In the 5-GHz case (parallel-plate and microstrip),
port effects are partially embedded in the extracted Debye parameters,
and the maximum difference between the measured and the full-wave
modeled |S21 | is of 1 dB. For the 20-GHz case (stripline), port effects are
de-embedded from the Debye parameters, and the maximum difference
seen is 0.7 dB up to 20 GHz for |S21 |.
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