K. R.

Sarma

Flexible Active Matrix Organic Light Emitting Diode

(AM OLED) Displays
Kalluri R. Sarma, Jerry Roush, John Schmidt, Charles Chanley, Sonia Dodd
Honeywell International
21111 N. 19th Avenue, Phoenix, AZ 85027
[email protected]
media, and d) thin film encapsulation / barrier layers for
the protection of the OLED devices from oxygen and
moisture in the ambient, for enhanced device life time.

Abstract: Flexible displays are of high current interest

for a variety of applications. In this paper we will first
discuss recent developments in the enabling technologies
for flexible displays - flexible substrates, TFT
backplanes, display media, and thin film encapsulation.
We will then discuss our current development efforts in
low-temperature (150oC) a-Si TFT backplanes
fabricated on PEN plastic substrates. Finally, we will
describe our efforts on the design, fabrication and
successful demonstration of flexible AM OLED displays
fabricated using a-Si TFT backplanes on PEN plastic
substrates using thin film encapsulation.

Previously, we reported on the basic feasibility of

fabricating an active matrix TFT backplane and AM
OLED display on a flexible PEN plastic substrate using
a 150oC a-Si TFT process [3-5]. In this paper, we will
first discuss the recent status of the developments in the
enabling technologies for flexible displays. We will then
discuss our continuing efforts on development of lowtemperature a-Si TFT backplanes on flexible PEN
backplanes involving the design, fabrication and
demonstration of flexible AM OLED displays with thin
film encapsulation.

Keywords: Flexible display; low-temperature a-Si

TFT; flexible AM OLED; plastic substrate; thin film
encapsulation

Flexible AMOLED Enabling Technologies

Introduction
The current high interest in the development of flexible
displays for the commercial and military applications
can be evidenced from the multiple conferences on
flexible displays (such as the USDC Flexible Display
and Microelectronics Conference [1], Intertech Flexible
Display and Electronic conference [2]), various R&D
Centers and Consortia focused on flexible display
development (such the ASU/ARL Flexible Display
center, FlexiDis), and numerous publications on flexible
displays in technical Journals. Flexible display
development is also benefiting from the developmental
efforts in large area macroelectronics aimed at
applications other than displays and vice versa.

Flexible Substrates:
Thin metal foils such as stainless steel, and thin polymer
substrate materials can be used as flexible substrates.
Metal foil substrates offer the advantages of higher
process temperature capability (for TFT fabrication),
dimensional stability (no shrinkage of the substrate due
to the temperature cycles associated with the TFT
fabrication), and being impervious to oxygen and
moisture. The limitations of the metal foil substrates
include: requiring top emission OLED device
architecture due to the opaqueness of the substrate, and
poor surface smoothness characteristics. Use of metal
foil substrates requires consideration of the capacitive
coupling (parasitic capacitance) of the substrate to the
backplane. The smoothness of the metal foil substrates
must be increased by either polishing (for example by
using chemical-mechanical polishing, CMP), or by
applying additional surface smoothing layers, to achieve
acceptable yield of the TFT and OLED devices to be
fabricated. The backside of the metal substrate must be
protected from the process chemicals during the
backplane fabrication. Note that a metal foil substrate,
by itself, is a good barrier (for oxygen and moisture) and
it does not require an additional barrier layer. However,
the display fabricated using the metal foil substrate
would still require a good barrier layer to be applied on
top of the OLED structure.

Flexible displays fabricated using plastic or metal foil

substrates have a potential for being very thin, light
weight, highly rugged with greatly minimized propensity
for breakage, and amenable to low-cost roll-to-roll
manufacturing. OLED display media offers the
advantage of being a rugged solid state structure for
flexible displays. It also offers other potential advantages
such as lower-power, superior image quality, and low
cost compared to the current LCD displays. Flexible AM
OLED displays can enable many unique applications,
due to their inherent ruggedness, and unique form factors
of conformability and rollability during use,
transportation and storage.
Several enabling technologies must be developed to
realize flexible displays. These technologies include: a)
flexible substrates with the required characteristics and
the associated substrate processes, b) TFT (thin film
transistor) backplane, and display drive electronics
designs and processes compatible with the selected
flexible substrate, c) flexible display compatible display

A transparent plastic substrate has the advantage of

being compatible with both the bottom emitting and the
top emitting OLED device architectures. A transparent
plastic substrates is also compatible with transmissive
and transflective AM LCD displays, thereby making
them suitable for a broader range of applications. Also,

337

Proc. of ASID 06, 8-12 Oct, New Delhi

K R Sarma
PEN with time as a function of relative humidity, RH, at
20oC ambient temperature. Note that every 100ppm of
moisture absorption results in a dimensional change of
about 45ppm. To eliminate the dimensional changes
associated with moisture absorption / de-sorption during
TFT processing, we developed a moisture barrier
deposition process. After the substrate pre-stabilization,
and prior to the TFT array fabrication, a plasma
deposited SiNx film was deposited on both sides of the
PEN substrate. The SiNx film maintains the substrates
dimensional stability by eliminating moisture absorption
during the TFT array fabrication processes, and the
associated dimensional changes that occur with moisture
absorption.

some plastic substrate materials, such as polyethylene

naphthalate (PEN) films (Teonex brand Q65) [6-7],
are fully compatible with the TFT fabrication chemistry.
The major limitations of the available plastic substrates
include: limited process temperature capability, lack of
dimensional stability (during TFT processing involving
high temperatures), and differences in the linear thermal
coefficient of expansion (TCE) between the plastic
substrate and the TFT thin films. TCE mismatch is an
issue for stainless steel substrates as well, particularly if
higher process temperatures are utilized.

TFT Backplane Technology

TFT backplane technology is a crucial enabler for the
fabrication of
flexible AM OLED displays. The
conventional glass substrate based TFT process cannot
be used with the flexible plastic substrates, primarily
because of the low-process temperature constraint.
Because of the limitations of lower process temperature,
lack of dimensional stability, and the thermal stresses
due to the TCE mismatch between the TFT thin films
and the substrate, new low temperature plastic
compatible TFT processes must be developed. There are
two main approaches for producing plastic backplanes:

Figure 1. Moisture absorption of PEN

Based on a combination of considerations including:
high optical transmission in the visible range (>87%),
low moisture pickup, reasonable dimensional stability,
reasonable surface smoothness, compatibility with TFT
process chemistry, and the reasonable TCE match with
the TFT thin films, we have selected polyethylene
naphthalate (PEN) substrates (Q65) [7] for our
development program. This substrate allows a TFT
fabrication temperature of 150oC. It should be noted that
while PEN (Q65) is superior to other available plastic
substrates with respect to moisture pickup, dimensional
stability, and smoothness etc., substantial improvements
are still needed in these characteristics for AM OLED
display applications.

1. Conventional
(high
temperature)
TFT
fabrication on a rigid glass substrate, followed by
transfer of the TFT circuit (backplane) on to a
flexible plastic substrate by adhesive bonding at a
temperature less than 150oC. This process is
referred to as Device Layer Transfer (DLT)
process.
2. Fabrication of TFT array directly on the flexible
plastic substrate. This involves fabricating polysilicon (ULTPS Ultra Low Temperature Poly
Silicon), or a-Si:H, or Organic TFT (OTFT) at a
temperature less than 150oC directly on the flexible
plastic substrate.
Two different methods are used to produce TFT
backplanes directly on flexible substrates. In one
method, the flexible substrate is first bonded to a rigid
carrier-substrate such as glass using a temporary
adhesive, for ease of handling during TFT array
fabrication. After the TFT array is fabricated, the
flexible substrate with the backplane circuit is separated
from the temporary adhesive (and the carrier substrate).
The temporary adhesive needs to be compatible with
TFT process conditions. In the second method, the TFT
array is fabricated on the flexible substrate directly,
without the use of a carrier. We adopted this second
method in our approach.

We developed a pre-stabilization process involving

annealing of the plastic substrates in vacuum at 160oC
for 4 hours to increase the dimensional stability. The
need for dimensional stability of the plastic substrate can
be illustrated when we consider the typical design rules
used in the TFT backplane fabrication. For a typical 3
m design rule used (for a contact via, as an example), a
shrinkage (mis-alignment) of more than 1.5m is
problematic. The as received heat stabilized PEN
substrate shrinks by about 0.05 % during TFT
backplane processing. This translates to a mis-alignment
of 250 m over a span of 50 mm (for a 2-inch display).
Clearly, this level of shrinkage (dimensional in-stability)
is not acceptable. With the developed pre-stabilization
process, the shrinkage during TFT backplane processing
is reduced to 1.5 m over a 60 mm span (~ 25 ppm or
0.0025 %). Also, as all other plastic materials Q65 PEN
substrate absorbs moisture resulting in a dimensional
change [8]. Figure 1 shows the moisture absorption in

Proc. of ASID 06, 8-12 Oct, New Delhi

Table I shows a comparison of the various TFT

technology options. The DLT process [9, 10] provides a
viable approach for flexible displays, when low cost is
not a consideration. This approach can provide the most
optimum TFT device performance with respect to
mobility, leakage current, stability and uniformity as the

338

K. R. Sarma
TFTs are fabricated using conventional LTPS (low
temperature polysilicon at ~ 400oC) process, and then
transferred on to the flexible plastic substrate at a low
temperature. Even single crystal silicon TFTs from a
silicon wafer can be transferred on to a plastic substrate.
While several companies have demonstrated this
approach, it is not believed to be the best solution for
low cost flexible displays.

are being investigated / developed for managing the TFT

device stability to eliminate this concern with a-Si TFTs.
Display Media Technology:
A variety of display media are being considered for
flexible display applications [1]. For a reflective display
based on modulating the reflected ambient light,
bistable display media such as electrophoretic,
cholesteric LC mode, and MEMS type displays are being
investigated. Bistable reflective displays have the
ultimate low-power potential. However, for night time
viewability, front lighting is required which increases the
display power consumption. Other general shortcomings
of this type of display media are slower display response
time, and poor color capability compared to transmissive
LCD displays and OLED displays.

The ULTPS TFT approach has the potential for

providing high mobility CMOS TFT devices suitable for
driving the OLED pixels, as well as for fabricating the
row and column drivers directly on the plastic substrate
[11]. However, low temperature (< 150o C) processes
must be developed for depositing a high quality gate
dielectric. Also, hydrogen plasma passivation is required
for achieving the desired TFT performance with low
leakage current and threshold voltage stability and
uniformity. Important progress continues to be made on
this approach. Organic TFTs (OTFT) provide the
ultimate potential for very low cost manufacturing.
Impressive progress continues to be made on this
approach [12,13], and TFT performance (mobility,
threshold voltage, and leakage current) adequate for
driving an OLED pixel has been demonstrated.
However, this technology is still developing and is not
believed to be sufficiently mature for the present
development effort.

AM OLED (Active matrix organic light emitting diode

display) technology offers a significant potential for
realizing rugged, full color, lightweight, low power and
low cost flexible displays. AM OLED technology based
on rigid glass substrates is advancing rapidly. Small size
(~2inch diagonal) displays are currently used in
products such as mobile phones. AM OLED technology
continues to make progress towards realizing superior,
low-power and low-cost large size (e.g. 40-inch) for
applications such as TV [15].
Thin Film Encapsulation:
Since the plastic substrates are not impermeable enough
to protect the OLEDs, a barrier layer must be added to
the substrate. Further whether using a plastic substrate or
a stainless steel substrate, the top side of the OLED must
be protected with an impermeable encapsulation layer.
For protection of an OLED display the barrier layer must
have a permeability less than 1e-6 gm/m2/day for
moisture and 1e-5 mL/m2/day for oxygen. Vitex [16] has
developed an elegant approach for the barrier layer as
shown in Figure 2. In this approach the barrier layer
consists of a multi-layer stack of inorganic barrier films
and organic compliant films as shown in Figure 2. In
this scheme, the inorganic films serve as a barrier film
for oxygen and moisture, organic layers serve the
planarization/smoothing function, and multi-layers
provide redundancy against pin hole defects in the
barrier films. The Vitex films are transparent in the
visible region and are compatible with top emission
OLED displays. We have selected and used Vitex
barrier layers in our flexible AM OLED demonstration
displays discussed in the next section.

Table I. Comparison of the available TFT options

Circuit Type
Device
Performance
- Mobility
- Off-Current
- Uniformity
- Stability
Cost
Maturity

Device
Layer
Transfer
CMOS

Poly-Silicon
(ULTPS)
CMOS

Excellent
Excellent
Good
Excellent
High
Low

Good
OK
Issue
Issue
Medium
Low

a-Si:H

Organic TFT

NMOS

PMOS

OK for Pixel OK for Pixel

Excellent
OK
Good
OK
Issue
Issue !!
Low
Very Low ?
Medium
Very Low

The a-Si TFTs used in the current commercial AM

LCDs, are fabricated at a typical process temperature of
300C. However, PEN plastic substrate requires a-Si
TFTs to be processed at 150C. Low temperature a-Si
TFT processes have been developed recently [e.g. 3, 14].
These processes produce TFTs with mobility, threshold
voltage and leakage current comparable to devices
processed at 300C. Low temperature a-Si TFT provides
adequate TFT device performance for OLED pixels
requiring drive currents in the A range that are typical
of the state of the art OLED materials and device
structures. The combination of low cost potential,
adequate device performance, and mature existing
manufacturing infrastructure, makes a-Si the preferred
technology option. However, one issue with low
temperature a-Si TFT is the long-term stability of these
devices under expected AM OLED operating conditions.
In particular, threshold voltage, Vt, stability of the drive
TFT is one area of concern. Several potential solutions

Figure 2. Vitex Barrier comprising a multi-layer

stack of organic and inorganic films [16]

339

Proc. of ASID 06, 8-12 Oct, New Delhi

K R Sarma
Flexible AM OLED with Thin Film Encapsulation
Based on the 150oC a-Si TFT process developed earlier
[3], we developed and optimized a 7mask TFT
backplane process using the PEN plastic substrate. The
process is similar to that of conventional high
temperature CHP (Channel Passivated) type a-Si TFT
process. However, the process recipes for the TFT thin
film depositions, particularly for the a-Si and SiNx
dielectric layers are optimized for a 150oC process, to
achieve mobility, and leakage current characteristics
comparable to the high temperature processed TFTs
[3,13]. Further, the mask and process design details are
optimized by taking into consideration the expected level
of plastic substrate shrinkage during the TFT process,
and thin film stresses due to CTE mismatch. As an
example, the ITO pixel electrode process has been
implemented as a lift-off process as opposed to an etchtype process to reduce the thin film stress and to increase
the yield. Four-inch diameter, 125 m thick Q65 PEN
plastic substrates [7] are utilized for fabricating the
backplanes for the test displays. Two backplane (test
display) designs have been developed. The first design
involved a 64x64 pixel monochrome display with an 80
dpi (dots per inch) resolution to demonstrate the basic
feasibility with proof of concept test displays. The
second design involved a 160x160(x3) pixel display to
demonstrate a display with a larger size and higher
resolution, and to determine display size and resolution
limits. Figure 3 shows photographs of fully processed
160x160(x3) pixel backplanes on 4-inch diameter PEN
plastic substrates. The design included various test
structures and process control monitors placed at the
periphery of the pixel arrays.

V DD

(Drain for N-Ch TFT)

Data
Select

Cs

T drive

T scan
OLED

Storage
node

(a)
(b)
Figure 4. (a) Photograph of a fabricated pixel in a
64x64 pixel backplane, and the (b) electrical
schematic
Figure 5 shows the typical performance of a 150oC TFT
in a fabricated backplane. Figure 5a shows the transfer
characteristics for a TFT with a W/L ratio of 63m /
9m. This device shows an on-current, Ion , of 7 A, and
an off-current, Ioff , in the picoamp range. Figure 5b
shows a plot of Ids versus Vgs (=Vds) for the TFT in
saturation. This TFT shows a mobility of 0.87 cm2/v.s
and a threshold voltage, Vt, of 2.5V. These performance
characteristics are sufficient to drive an AM OLED
pixel.
Vd= 10

D13-A, 63x9

1.E-05
1.E-06
Id (amps)

1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
1.E-12
1.E-13
-10

10

20

30

Vg (volts)

a
D13-A, 63x9

(a)
(b)
Figure 3. Active matrix backplanes fabricated on
flexible PEN plastic substrate: a) 160x160x(x3)
pixel array, b) Illustrating flexural capabilities

3.0E-03
u = 0.867 cm/ vs

2.5E-03
Vth = 2.51 V

Figure 4a shows photographs of the pixel region in the

fabricated backplane illustrating the layout of the scan
and drive TFTs, and the storage capacitor in a 64x64
pixel backplane. Figure 2b shows the electrical
schematic of the pixel with 2 TFTs/pixel.

SQRT (Ids)

2.0E-03
1.5E-03
1.0E-03
5.0E-04

One of the critical requirements for successful backplane

fabrication is maintaining registration of various TFT
mask levels during processing as the substrate dimension
changes due to shrinkage and moisture absorption.
Using the substrate pre-stabilization process, and SiNx
barrier layers, we achieved acceptable dimensional
stability and layer-to-layer alignment accuracy sufficient
for fabricating functional backplanes and displays.

Proc. of ASID 06, 8-12 Oct, New Delhi

0.0E+00
-10

-5

Vg 5

10

15

20

b
Figure 5. Typical TFT Characteristics in a
fabricated backplane: a) transfer characteristics, b)
Square Ids versus Vgs (=Vds) for a TFT in saturation
340

K. R. Sarma
The display test and evaluation process initially
consisted of interconnecting the display assembly to the
drive electronics system and exercising the display with
various test images and evaluating the display
performance as the display drive voltages are optimized.
For control purposes, a-Si TFT backplanes and AM
OLED displays were fabricated on rigid glass substrates
using the same 150oC process along with the backplanes
and displays on plastic substrates.

OLED Display Fabrication

During the initial development phase, the fabricated
backplanes were integrated with the OLED display
media and laminated to a cover glass using an adhesive.
The cover glass protects the AM OLED from oxygen
and moisture in the ambient air. We fabricated test
displays using both the backplane designs. While the
160x160(x3) pixel backplane is designed for a R, G, B
color display with a 80 cgpi resolution, we chose to
fabricate a 480x160 pixel monochrome using this
backplane as a first step to validate the active matrix
design and fabrication for large size and high resolution
capabilities.
Monochrome OLED devices were
fabricated on the a-Si backplanes on the Q65 substrates,
using standard OLED materials, device structures, and
processes.

Figure 6 shows the photographs of test images in a

64x64 pixel test displays fabricated on flexible PEN
plastic substrates. Figure 7 shows the photograph of test
images on a 160x160(x3) pixel test displays we
fabricated. While these displays show a few pixel and
line defects, they were found to function as designed.
The fabricated displays are found to be capable of
displaying grayscale images and full motion video. In
general the control displays fabricated using glass
substrates were found to perform similarly except for
having fewer pixel and line defects. The surface quality
of the PEN plastic substrate was found to have a
significant impact on the quality of the displays
fabricated with respect to pixel and line defects
observed. Displays fabricated on PEN substrates with
improved surface quality exhibited significantly fewer
display defects.

Flex cables associated with the row and column drivers

are then bonded to the row and column bus pads on the
display with a heat seal connection, to complete the
display assembly.
The display assembly is then
connected to the display drive electronics system for test
and evaluation.
Separate versatile drive electronics systems are designed
to exercise and evaluate each test display. Both the test
displays utilized a conventional AM LCD COTS row
driver. Since no suitable commercial gray-scale driver
was available for a display of only 64 columns, a simple
64-channel sample and hold (S/H) circuit was devised
for the column driver. Analog VGA data is amplified
and level-shifted such that it corresponds with the
optimal operating range of the display under test. A 1:64
multiplexer switches the pixel data to the appropriate
hold amplifier; one for each column of the display. For
the 160x160(x3) pixel test display an AM LCD type
column driver is used with a chip on flex (COF)
implementation.

Figure 6.Test images in a 64x64 pixel test display

fabricated.

Results and Discussion

Table II shows the salient design features of the 64x64
pixel test display designed and fabricated. The basic
design features of the 160x160(x3) pixel test display are
similar to the ones in Table II except for a subpixel pitch
of 100m x 300m and an active display area of 48 mm
x 48 mm with an 80 cgpi resolution.
Figure 7. 160x160(x3) pixel test displays fabricated
Table II. Salient features of the 64x64 pixel test
display
Display Resolution
Color
Pixel Pitch
Active Area
Active Matrix Element
AM OLED Pixel Design
Backplane processing
Display Driving

Following the design verification by demonstration of

displays fabricated Q65 flexible PEN substrates, we
fabricated, flexible AM OLED test displays using the
same backplane designs, but used Barix thin film
encapsulation [16]. Figure 8 shows a schematic crosssection of the AM OLED display fabricated. The Barix
(barrier film) is of the order of only a few microns. Thus
the thickness of the flexible display fabricated is about
~130 microns. Figure 9 shows the photographs of a
flexible AM OLED test display fabricated along with its
flexural capabilities. The fabricated displays were found
to function essentially similar to the test displays in
Figure 6 using the glass substrate lamination. While we

64 x 64 Pixels
Monochrome Yellow
80 dpi - 300 x300 microns
19.2 mm x 19.2 mm
150 C a-Si TFT , Inverted
staggered structure, CHP type
2 TFT / Pixel, Voltage
Programmed Current Drive
7 Mask process
External Row / Column drivers

341

Proc. of ASID 06, 8-12 Oct, New Delhi

K R Sarma
had not made systematic life time measurements of the
OLED displays we fabricated, the observed lifetimes
clearly indicated the effectiveness of this approach.

Summary
We have developed a 150oC a-Si TFT process and
backplane designs for fabricating AM OLED displays on
flexible Teonex Q65 (PEN) plastic substrates.
Monochrome AM OLED test displays were fabricated
using these plastic backplanes and a thin film Barix
encapsulation layer to demonstrate flexible displays.
Test display sizes up to 2x2-inch with an equivalent
resolution of 80 cgpi are demonstrated. Appropriate
handling of the plastic substrate (backplane) was found
to be essential to minimize handling related damage
(yield loss), particularly when fabricating large area
displays. With further improvements in dimensional
stability and design enhancements such as top emission
OLED device architecture, this approach shows promise
for fabricating large area, high resolution flexible AM
OLED displays.

Figure 8. Schematic cross-section through the AM

OLED test display with thin film encapsulation

References
1. USDC 2006 Flexible Display and Microelectronics
Conference, Feb 7-9, 2006, Phoenix, Arizona.

The evaluation and characterization of the flexible

displays we fabricated highlighted handling issues for
these displays. The flexible displays can tolerate flexing
up to a critical bend radius. However, when the display
gets bent with a radius smaller than the critical radius, it
leads to cracking of the overcoat layer on the plastic
substrate, and this crack propagates through the address
bus lines. The cracked bus structures cause the displays
to exhibit intermittent line failures, gross line failures, or
large regions of non-functioning areas including
complete display failure. We have verified that by using
appropriate tooling and fixtures during display assembly
operations, these failures can be prevented. Special
bezels were designed and constructed to hold the test
displays. The bezel protects the display during assembly
and subsequent handling and testing.

2. Intertech Conference Flexible Displays and

Electronics 2005, San Francisco, CA, June 20-22, 2005
3. K.R.Sarma et al. Cockpit Displays X, Proceedings of
the SPIE 2003, pp 180-191, 2003
4. K. R. Sarma et al. Defense, Security, and Cockpit
Displays Conference, Orlando, FL, SPIE 2004
5. K. R. Sarma, Proc. Of the 2004 MRS Spring
Conference, San Francisco, CA, 2004
6. MacDonald,W.A, Mace,J.M. and Polack, N.P.,45th
Annual Technical Conference Proceedings of the
Society of Vacuum Coaters, 482, (2002)
7. Teonex is registered trademark of Teijin DuPont
Films Japan Limited and licensed to DuPont Teijin
Films U.S. Limited Partnership.
8. W. A. MacDonald, et al. in ref.[1]
9. S. Utsunomiya et al., p 864-867, SID Digest 2003.
10. A. Asano et al., pp 988-991, SID Digest 2003
11. M.G. Kane et al., in Ref[1]
12. B. Ong in Ref [1]
13. S. E. Burns et al., SID06 Digest, p74 , 2006
14. H. Gleskova, S. Wagner, Z. Suo, in Flat Panel
Display Materials - 1998 (Eds. G.N. Parsons, C.C. Tsai,
T.S. Fahlen, and C.H. Seager), Mat. Res. Soc. Symp.
Proc. 508 (1998), pp. 73-78

Figure 9. AM OLED with thin film encapsulation

While we have demonstrated the feasibility fabricating
small (48mm x 48 mm) size displays with 80-cgpi
resolution, we believe that even larger size displays and
higher display resolutions will be possible by further
improvement of the dimensional stability of the plastic
substrates.

Proc. of ASID 06, 8-12 Oct, New Delhi

15. N. Ibaraki, SID06 Digest, p 1760, 2006

16. T. Ramos, in ref [1]

342