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PRELIMINARY

MX29LV008T/B
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
Extended single - supply voltage range 2.7V to 3.6V
1,048,576 x 8
Single power supply operation
- 3.0V only operation for read, erase and program
operation
Fast access time: 70/90ns
Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
Command register architecture
- Byte Programming (7us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.

Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Low VCC write inhibit is equal to or less than 2.3V
Package type:
- 40-pin TSOP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash

GENERAL DESCRIPTION
The MX29LV008T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV008T/B
is packaged in 40-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM
programmers.

during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29LV008T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.

The standard MX29LV008T/B offers access time as fast

as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the MX29LV008T/B has separate chip enable (CE) and
output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The
MX29LV008T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels

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MX29LV008T/B
PIN CONFIGURATIONS
40 TSOP (Standard Type) (10mm x 20mm)
A16
A15
A14
A13
A12
A11
A9
A8
WE
RESET
NC
RY/BY
A18
A7
A6
A5
A4
A3
A2
A1

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20

MX29LV008T/B

40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21

A17
GND
NC
A19
A10
Q7
Q6
Q5
Q4
VCC
VCC
NC
Q3
Q2
Q1
Q0
OE
GND
CE
A0

PIN DESCRIPTION
SYMBOL

PIN NAME

A0~A19

Address Input

Q0~Q7

Data Input/Output

CE

Chip Enable Input

WE

Write Enable Input

RESET

Hardware Reset Pin

OE

Output Enable Input

RY/BY

Ready/Busy Output

VCC

Power Supply Pin (2.7V~3.6V)

GND

Ground Pin

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MX29LV008T/B
BLOCK STRUCTURE
Table 1: MX29LV008T SECTOR ARCHITECTURE
Sector

Sector Size

Address range

Sector Address
A19 A18 A17 A16 A15 A14 A13

SA0

64Kbytes

00000h-0FFFFh

SA1

64Kbytes

10000h-1FFFFh

SA2

64Kbytes

20000h-2FFFFh

SA3

64Kbytes

30000h-3FFFFh

SA4

64Kbytes

40000h-4FFFFh

SA5

64Kbytes

50000h-5FFFFh

SA6

64Kbytes

60000h-6FFFFh

SA7

64Kbytes

70000h-7FFFFh

SA8

64Kbytes

80000h-8FFFFh

SA9

64Kbytes

90000h-9FFFFh

SA10

64Kbytes

A0000h-AFFFFh

SA11

64Kbytes

B0000h-BFFFFh

SA12

64Kbytes

C0000h-CFFFFh

SA13

64Kbytes

D0000h-DFFFFh

SA14

64Kbytes

E0000h-EFFFFh

SA15

32Kbytes

F0000h-F7FFFh

SA16

8Kbytes

F8000h-F9FFFh

SA17

8Kbytes

FA000h-FBFFFh

SA18

16kbytes

FC000h-FFFFFh

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MX29LV008T/B
Table 2: MX29LV008B SECTOR ARCHITECTURE
Sector

Sector Size

Address range

Sector Address
A19 A18 A17 A16 A15 A14 A13

SA0

16Kbytes

00000h-03FFFh

SA1

8Kbytes

04000h-05FFFh

SA2

8Kbytes

06000h-07FFFh

SA3

32Kbytes

08000h-0FFFFh

SA4

64Kbytes

10000h-1FFFFh

SA5

64Kbytes

20000h-2FFFFh

SA6

64Kbytes

30000h-3FFFFh

SA7

64Kbytes

40000h-4FFFFh

SA8

64Kbytes

50000h-5FFFFh

SA9

64Kbytes

60000h-6FFFFh

SA10

64Kbytes

70000h-7FFFFh

SA11

64Kbytes

80000h-8FFFFh

SA12

64Kbytes

90000h-9FFFFh

SA13

64Kbytes

A0000h-AFFFFh

SA14

64Kbytes

B0000h-BFFFFh

SA15

64Kbytes

C0000h-CFFFFh

SA16

64Kbytes

D0000h-DFFFFh

SA17

64Kbytes

E0000h-EFFFFh

SA18

64kbytes

F0000h-FFFFFh

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MX29LV008T/B
BLOCK DIAGRAM

CE
OE
WE
RESET

CONTROL
INPUT

HIGH VOLTAGE

LOGIC

LATCH

BUFFER

Y-DECODER

AND

X-DECODER

ADDRESS
A0-A19

PROGRAM/ERASE

WRITE
STATE
MACHINE
(WSM)

STATE
REGISTER

MX29LV008T/B

FLASH
ARRAY
Y-PASS GATE

SENSE
AMPLIFIER

PGM
DATA
HV

ARRAY
SOURCE
HV

COMMAND
DATA
DECODER

COMMAND
DATA LATCH

PROGRAM
DATA LATCH

Q0-Q7

I/O BUFFER

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MX29LV008T/B
AUTOMATIC PROGRAMMING

AUTOMATIC ERASE ALGORITHM

The MX29LV008T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV008T/B is less than 10 seconds.

MXIC's Automatic Erase algorithm requires the user to

write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the
status of the erasing operation.

AUTOMATIC PROGRAMMING ALGORITHM

Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whichever happens first.

MXIC's Automatic Programming algorithm requires the

user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program verification, and counts the number of sequences.
The device provides an unlock bypass mode with faster
programming. Only two write cycles are needed to program a word or byte, instead of four. A status bit similar
to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as
to the status of the programming operation. Refer to write
operation status, table 7, for more information on these
status bits.

MXIC's Flash technology combines years of EPROM

experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV008T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.

AUTOMATIC CHIP ERASE

The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase
are controlled internally within the device.

AUTOMATIC SELECT
AUTOMATIC SECTOR ERASE

The auto select mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the device to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9 and other address pin A6, A1 and A0 as referring
to Table 3. In addition, to access the automatic select
codes in-system, the host can issue the automatic se-

The MX29LV008T/B is sector(s) erasable using MXIC's

Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.

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MX29LV008T/B
lect command through the command register without
requiring VID, as shown in table4.
To verify whether or not sector being protected, the sector address must appear on the appropriate highest order address bit (see Table 1 and Table 2). The rest of
address bits, as shown in table3, are don't care. Once
all necessary bits have been set as required, the programming equipment may read the corresponding identifier code on Q7~Q0.

TABLE 3. MX29LV008T/B AUTO SELECT MODE OPERATION

Description

Read Silicon ID

CE

OE

WE

A19

A12

A13

A10

A9

A8

A6

A5

A1

A0

A7

Q7~Q0

A2

VID

C2H

VID

3EH

VID

37H

Manfacturer Code
Read Silicon ID
(Top Boot Block)
Device ID
(Bottom Boot Block)
01H
Sector Protection
Verification

SA

VID

(protected)
00H
(unprotected)

NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High

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MX29LV008T/B
TABLE 4. MX29LV008T/B COMMAND DEFINITIONS
First Bus
Bus Cycle

Command

Cycle Addr

Second Bus
Cycle

Data Addr

Third Bus
Cycle

Fourth Bus
Cycle

Data Addr

Data Addr

Data

Reset

XXXH F0H

Read

RA

Read Silicon Top Boot

555H AAH 2AAH

55H

555H

90H ADI

DDI

ID

555H AAH 2AAH

55H

555H

90H ADI

DDI

555H AAH 2AAH

55H

555H

90H (SA)

00H

Bottom Boot

Sector Protect

Fifth Bus
Cycle
Addr

Sixth Bus
Cycle
Data Addr

Data

RD

Verify

x02H

01H

Porgram

555H AAH 2AAH

55H

555H

A0H PA

PD

Chip Erase

555H AAH 2AAH

55H

555H

80H 555H AAH

2AAH 55H

555H 10H

Sector Erase

555H AAH 2AAH

55H

555H

80H 555H AAH

2AAH 55H

SA

Sector Erase Suspend

XXXH B0H

Sector Erase Resume

XXXH 30H

30H

Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, 3E/37 (Top/Bottom Boot) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2.PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.
3.Address A19-A11 are don't cares for unlock and command cycles.
4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it
means the sector is still not being protected.

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MX29LV008T/B
COMMAND DEFINITIONS
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.

Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 4 defines the valid register command
TABLE 5. MX29LV008T/B BUS OPERATION

ADDRESS
DESCRIPTION

CE

OE

WE

RESET

A19 A12

A9

A13 A10

A8

A6

A7

A5

A1

A0

Q0~Q7

A2

Read

AIN

Dout

Write

AIN

DIN(3)

Reset

High Z

Temproary Sector Unprotect

VID

Output Disable

High Z

Standby

Vcc0.3V

Vcc0.3V

High Z

Sector Protect

VID

SA

DIN

Sector Unprotect

VID

DIN

Sector Protection Verify

SA

VID

CODE(5)

AIN

DIN

NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 4 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H means unprotected.
Code=01H means protected.
6. A19~A13=Sector address for sector protect.
7.The sector protect and chip unprotect functions may also be implemented via programming equipment.

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MX29LV008T/B
REQUIREMENTS FOR READING ARRAY
DATA

Refer to the Autoselect Mode and Autoselect Command

Sequence section for more information.

To read array data from the outputs, the system must

drive the CE and OE pins to VIL. CE is the power control
and selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH.

ICC2 in the DC Characteristics table represents the

active current specification for the write mode. The "AC
Characteristics" section contains timing specification
table and timing diagrams for write operations.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory contect
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.

STANDBY MODE
When using both pins of CE and RESET, the device
enter CMOS Standby with both pins held at Vcc 0.3V.
IF CE and RESET are held at VIH, but not within the
range of VCC 0.3V, the device will still be in the standby
mode, but the standby current will be larger. During Auto
Algorithm operation, Vcc active current (Icc2) is required
even CE = "H" until the operation is complated. The device can be read with standard access time (tCE) from
either of these standby modes, before it is ready to read
data.

WRITE COMMANDS/COMMAND
SEQUENCES
To program data to the device or erase sectors of memory
, the sysytem must drive WE and CE to VIL, and OE to
VIH.

OUTPUT DISABLE
With the OE input at a logic high level (VIH), output from
the devices are disabled. This will cause the output pins
to be in a high impedance state.

The device features an Unlock Bypass mode to facilitate

faster programming. Once the device enters the Unlock
Bypass mode, only two write cycles are required to
program a byte, instead of four. The "byte Program
Command Sequence" section has details on
programming data to the device using both standard and
Unlock Bypass command sequences.

RESET OPERATION
The RESET pin provides a hardware method of resetting
the device to reading array data. When the RESET pin is
driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET pluse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
reinitated once the device is ready to accept another
command sequence, to ensure data integrity

An erase operation can erase one sector, multiple sectors

, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector.
The "Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data."section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.

Current is reduced for the duration of the RESET pulse.

When RESET is held at VSS0.3V, the device draws
CMOS standby current (ICC4). If RESET is held at VIL
but not within VSS0.3V, the standby current will be
greater.

After the system writes the autoselect command

sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
reqister (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.

The RESET pin may be tied to system reset circuitry. A

system reset would that also reset the Flash memory,
enabling the system to read the boot-up firm-ware from

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MX29LV008T/B
the Flash memory.

SET-UP AUTOMATIC CHIP/SECTOR ERASE

COMMANDS

If RESET is asserted during a program or erase

operation, the RY/BY pin remains a "0" (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
sysytem can thus monitor RY/BY to determine whether
the reset operation is complete. If RESET is asserted
when a program or erase operation is commpleted within
a time of tREADY (not during Embedded Algorithms).
The system can read data tRH after the RESET pin
returns to VIH.

Chip erase is a six-bus cycle operation. There are two

"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H
or sector erase command 30H.
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to provide any
control or timing during these operations.

Refer to the AC Characteristics tables for RESET

parameters and to Figure 20 for the timing diagram.

READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.

When using the Automatic Chip Erase algorithm, note

that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).

If program-fail or erase-fail happen, the write of F0H will

reset the device to abort the operation. A valid command must then be written to place the device in the
desired state.

If the Erase operation was unsuccessful, the data on

Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.
The automatic erase begins on the rising edge of the
last WE or CE pulse, whichever happens first in the
command sequence and terminates when the data on
Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns
to the Read mode.

SILICON-ID READ COMMAND

Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage(VID). However, multiplexing high voltage
onto address lines is not generally desired system design practice.
The MX29LV008T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read silicon
ID command sequence into the command register. Following the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H. A read
cycle with A1=VIL, A0=VIH returns the device code of
3EH for MX29LV008T, 37H for MX29LV008B.

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MX29LV008T/B
TABLE 6. SILICON ID CODE
Pins
Manufacture code
Device code
for MX29LV008T
Device code
for MX29LV008B
Sector Protection
Verification

A0
VIL
VIH

A1
VIL
VIL

Q7
1
0

Q6
1
0

Q5
0
1

Q4
0
1

Q3
0
1

Q2
0
1

Q1
1
1

Q0
0
0

Code(Hex)
C2H
3EH

VIH

VIL

37H

X
X

VIH
VIH

0
0

0
0

0
0

0
0

0
0

0
0

0
0

1
0

01H (Protected)
00H (Unprotected)

READING ARRAY DATA

RESET COMMAND

The device is automatically set to reading array data

after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.

Writing the reset command to the device resets the

device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.

After the device accepts an Erase Suspend command,

the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See rase Suspend/Erase
Resume Commands for more infor-mation on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.

The reset command may be written between the sequence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins,however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command must be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to reading
array data (also applies during Erase Suspend).

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MX29LV008T/B
mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to respond to Erase Resume, program data to , or read data
from any sector not selected for erasure.

SECTOR ERASE COMMANDS

The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.

The system can determine the status of the program

operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend program operation is complete, the system can once again
read array data within non-suspended sectors.

When using the Automatic sector Erase algorithm, note

that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later, while the command(data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.

ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.

WORD/BYTE PROGRAM COMMAND SEQUENCE

The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 1 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.

ERASE SUSPEND
This command only has meaning while the state machine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend Com-

Any commands written to the device during the Em-

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MX29LV008T/B
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operat ion. The Byte Program command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.

scribed for the Automatic Program algorithm: the erase

function changes all the bits in a sector to "1" prior to
this, the device outputs the "complement, or "0". The
system must provide an address within any of the sectors selected for erasure to read valid status information
on Q7.

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" , or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".

After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchr onously with Q0-Q6 while Output Enable (OE) is asserted low.

WRITE OPERSTION STATUS

The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY. Table 10 and the following subsections describe the
functions of these bits. Q7, RY/BY, and DQ6 each offer
a method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.

RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY status is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence. Since RY/BY
is an open-drain output, several RY/BY pins can be tied
together in parallel with a pull-up resistor to Vcc.

Q7: Data Polling

The Data Polling bit, Q7, indicates to the host sys-tem
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data
Polling is valid after the rising edge of the final WE pulse
in the program or erase command sequence.

If the output is low (Busy), the device is actively erasing

or programming. (This includes programming in the Erase
Suspend mode.)If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.

During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming during Er ase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program
address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data.

Table 7 shows the outputs for RY/BY during write operation.

Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence(prior to the program or erase operation), and during the sector timeout.

During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put de-

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MX29LV008T/B
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6
stops toggling.

are required for sectors and mode information. Refer to

Table 7 to compare outputs for Q2 and Q6.

After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.

Whenever the system initially begins reading toggle bit

status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.

Reading Toggle Bits Q6/ Q2

The system can use Q6 and Q2 together to determine

whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. However, the system must also use Q2
to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7.

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfuly completed the program or erase operation. If it is still toggling, the device did not complete the
operation successfully, and the system must write the
reset command to return to reading array data.

If a program address falls within a protected sector, Q6

toggles for approximately 2 us after the program command sequence is written, then returns to reading array
data.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm is complete.

The remaining scenario is that system initially determines

that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.

Table 7 shows the outputs for Toggle Bit I on Q6.

Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively eraseing (that is,
the Automatic Erase alorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.

Q5
Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.

Q2 toggles when the system reads at addresses within

those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits

If this time-out condition occurs during sector erase op-

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MX29LV008T/B
eration, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.

If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.

If this time-out condition occurs during the chip erase

operation, it specifies that the entire chip is bad or combination of sectors are bad.

Table 7. WRITE OPERATION STATUS

Status
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)

Q7
(Note1)

Q6

Q5
Q3
(Note2)

Q2

RY/BY

Q7

Toggle

N/A

No
Toggle

Toggle

Toggle

No
Toggle

N/A Toggle

Data

Data

Q7

Toggle

N/A

N/A

Q7

Toggle

N/A

No
Toggle

Toggle

Toggle

Q7

Toggle

N/A

N/A

In Progress
Erase Suspended Mode

Erase Suspend Read

(Non-Erase Suspended Sector)
Erase Suspend Program

Byte Program in Auto Program Algorithm

Exceeded
Time Limits

Auto Erase Algorithm

Erase Suspend Program

Data Data Data

Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.

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MX29LV008T/B
Q3
Sector Erase Timer

POWER SUPPLY DECOUPLING

In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.

After the completion of the initial sector erase command

sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling
and Toggle Bit are valid after the initial sector erase command sequence.

POWER-UP SEQUENCE
The MX29LV008T/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.

If Data Polling or the Toggle Bit indicates the device has

been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.

TEMPORARY SECTOR UNPROTECT

This feature allows temporary unprotection of previously
protected sector to change data in-system. The Temporary Sector Unprotect mode is activated by setting the
RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET pin,all the previously protected sectors are protected again.

DATA PROTECTION
SECTOR PROTECTION

The MX29LV008T/B is designed to offer protection

against accidental erasure or programming caused by
spurious system level signals that may exist during power
transition. During power up the device automatically resets the state machine in the Read mode. In addition,
with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific command sequences. The device also
incorporates several features to prevent inadvertent write
cycles resulting from VCC power-up and power-down transition or system noise.

The MX29LV008T/B features hardware sector protection. This feature will disable both program and erase
operations for these sectors protected. To activate this
mode, the programming equipment must force VID on
address pin A9 and OE (suggest VID = 12V). Programming of the protection circuitry begins on the falling edge
of the WE pulse and is terminated on the rising edge.
Please refer to sector protect algorithm and waveform.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=VIH,
A0=VIL, A6=VIL, it will produce a logical "1" code at
device output Q0 for a protected sector. Otherwise the
device will produce 00H for the unprotected sector. In
this mode, the addresses,except for A1, are don't care.
Address locations with A1 = VIL are reserved to read
manufacturer and device codes.(Read Silicon ID)

WRITE PULSE "GLITCH" PROTECTION

Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.

LOGICAL INHIBIT
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector.

Writing is inhibited by holding any one of OE = VIL, CE

= VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.

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MX29LV008T/B
CHIP UNPROTECT
The MX29LV008T/B also features the chip unprotect
mode, so that all sectors are unprotected after chip
unprotect is completed to incorporate any changes in the
code. It is recommended to protect all sectors before
activating chip unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.
Refer to chip unprotect algorithm and waveform for the
chip unprotect algorithm. The unprotection mechanism
begins on the falling edge of the WE pulse and is
terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.

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MX29LV008T/B
ABSOLUTE MAXIMUM RATINGS

OPERATING RATINGS

Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA

Commercial (C) Devices

Ambient Temperature (TA ). . . . . . . . . . . . 0C to +70C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . . . . -40C to +85C
VCC Supply Voltages
VCC for regulated voltage range . . . . . +3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V

Operating ranges define those limits between which the

functionality of the device is guaranteed.

Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to
20 ns.
2. Minimum DC input voltage on pins A9, OE, and
RESET is -0.5 V. During voltage transitions, A9, OE,
and RESET may overshoot VSS to -2.0 V for periods
of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Rat-ings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.

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MX29LV008T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL

PARAMETER

CIN1
CIN2
COUT

MIN.

TYP

MAX.

UNIT

CONDITIONS

Input Capacitance

pF

VIN = 0V

Control Pin Capacitance

12

pF

VIN = 0V

Output Capacitance

12

pF

VOUT = 0V

READ OPERATION
Table 8. DC CHARACTERISTICS TA = 0oC TO 70oC, VCC = 2.7V ~ 3.6V
Symbol

PARAMETER

ILI

MIN.

TYP

MAX.

UNIT

CONDITIONS

Input Leakage Current

uA

VIN = VSS to VCC

ILIT

A9 Input Leakage Current

35

uA

VCC=VCC max; A9=12.5V

ILO

Output Leakage Current

uA

VOUT = VSS to VCC, VCC=VCC max

ICC1

VCC Active Read Current

12

mA

CE=VIL, OE=VIH

mA

@5MHz
@1MHz

ICC2

VCC Active write Current

15

30

mA

CE=VIL, OE=VIH

ICC3

VCC Standby Current

0.2

uA

CE; RESET=VCC 0.3V

ICC4

VCC Standby Current

0.2

uA

RESET=VSS 0.3V

0.2

uA

VIH=VCC 0.3V;VIL=VSS 0.3V

-0.5

0.8

0.7xVCC

VCC+ 0.3

11.5

12.5

VCC=3.3V

0.45

IOL = 4.0mA, VCC= VCC min

During Reset
ICC5

Automative sleep mode

VIL

Input Low Voltage(Note 1)

VIH

Input High Voltage

VID

Voltage for Automative

Select and Temporary
Sector Unprotect

VOL

Output Low Voltage

VOH1

Output High Voltage(TTL)

VOH2

Output High Voltage

0.85xVCC

IOH = -2mA, VCC=VCC min

VCC-0.4

IOH = -100uA, VCC min

(CMOS)
VLKO

Low VCC Lock-out

2.3

2.5

Voltage
NOTES:
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.

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MX29LV008T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 2.7V~3.6V
Table 9. READ OPERATIONS
29LV008T/B-70 29LV008T/B-90
SYMBOL

PARAMETER

tRC

MAX. MIN.

MAX.

UNIT

Read Cycle Time (Note 1)

70

90

ns

tACC

Address to Output Delay

70

90

ns

CE=OE=VIL

tCE

CE to Output Delay

70

90

ns

OE=VIL

tOE

OE to Output Delay

30

35

ns

CE=VIL

tDF

OE High to Output Float (Note1)

30

ns

CE=VIL

tOEH

Output Enable

Read

ns

Hold Time

Toggle and Data Polling

10

10

ns

ns

tOH

MIN.

Address to Output hold

25

CONDITIONS

CE=OE=VIL

NOTE:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves the
open circuit condition and data is no longer driven.

TEST CONDITIONS:
Input pulse levels: 0V/3.0V.
Input rise and fall times is equal to or less than 5ns.
Output load: 1 TTL gate + 100pF (Including scope and
jig), for 29LV008T/B-90. 1 TTL gate + 30pF (Including
scope and jig) for 29LV008T/B-70.
Reference levels for measuring timing: 1.5V.

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MX29LV008T/B
SWITCHING TEST CIRCUITS

2.7K ohm

DEVICE UNDER

+3.3V

TEST

CL

6.2K ohm

DIODES=IN3064
OR EQUIVALENT

CL=100pF Including jig capacitance (30pF for MX29LV008T/B-70)

SWITCHING TEST WAVEFORMS

3.0V
1.5V

INPUT

TEST POINTS

1.5V

OUTPUT

0V

AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.

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MX29LV008T/B
Figure 1. READ TIMING WAVEFORMS

tRC
VIH

Addresses

ADD Valid
VIL
tACC
tCE

CE

VIH
VIL

WE

VIH
VIL

tOE

tOEH

tDF

VIH

OE
VIL
tACC

Outputs

VOH

HIGH Z

tOH

DATA Valid

HIGH Z

VOL

VIH

RESET

VIL

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MX29LV008T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 2.7V~3.6V
Table 10. Erase/Program Operations
29LV008T/B-70

29LV008T/B-90
MIN.

SYMBOL

PARAMETER

MIN.

MAX.

MAX.

UNIT

tWC

Write Cycle Time (Note 1)

70

90

ns

tAS

Address Setup Time

ns

tAH

Address Hold Time

45

45

ns

tDS

Data Setup Time

35

45

ns

tDH

Data Hold Time

ns

tOES

Output Enable Setup Time

ns

tGHWL

Read Recovery Time Before Write

ns

(OE High to WE Low)

tCS

CE Setup Time

ns

tCH

CE Hold Time

ns

tWP

Write Pulse Width

35

35

ns

tWPH

Write Pulse Width High

30

30

ns

tWHWH1

Programming Operation (Note 2)

9 (TYP.)

9 (TYP.)

us

tWHWH2

Sector Erase Operation (Note 2)

0.7(TYP.)

0.7(TYP.)

sec

tVCS

VCC Setup Time (Note 1)

50

50

us

tRB

Recovery Time from RY/BY

ns

tBUSY

Program/Erase Vaild to RY/BY Delay

90

90

ns

NOTES:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

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MX29LV008T/B
AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 2.7V~3.6V
Table 11. Alternate CE Controlled Erase/Program Operations
29LV008T/B-70

29LV008T/B-90
MIN.

SYMBOL

PARAMETER

MIN.

MAX.

MAX.

UNIT

tWC

Write Cycle Time (Note 1)

70

70

ns

tAS

Address Setup Time

ns

tAH

Address Hold Time

45

45

ns

tDS

Data Setup Time

35

45

ns

tDH

Data Hold Time

ns

tOES

Output Enable Setup Time

ns

tGHEL

Read Recovery Time Before Write

ns

tWS

WE Setup Time

ns

tWH

WE Hold Time

ns

tCP

CE Pulse Width

35

35

ns

tCPH

CE Pulse Width High

30

30

ns

tWHWH1

Programming Operation(note2)

9(Typ.)

9(Typ.)

us

tWHWH2

Sector Erase Operation (note2)

0.7(Typ.)

0.7(Typ.)

sec

NOTE:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

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MX29LV008T/B
Figure 2. COMMAND WRITE TIMING WAVEFORM

VCC

Addresses

3V

VIH

ADD Valid
VIL
tAH

tAS

WE

VIH
VIL

tOES

tWPH

tWP
tCWC

CE

VIH
VIL
tCS

OE

tCH

VIH
VIL

tDS

tDH

VIH

Data

DIN
VIL

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MX29LV008T/B
AUTOMATIC PROGRAMMING TIMING WAVEFORM
after automatic programming starts. Device outputs
DATA during programming and DATA after programming
on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling,
timing waveform)

One byte data is programmed. Verify in fast algorithm

and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking

Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM

Program Command Sequence(last two cycle)
tWC

555h

Address

Read Status Data (last two cycle)

tAS

PA

PA

PA

tAH

CE
tCH
tGHWL

OE

tWHWH1

tWP

WE

tCS

tWPH
tDS tDH

A0h

Status

PD

DOUT

Data
tBUSY

tRB

RY/BY

tVCS

VCC

NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address

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MX29LV008T/B
Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data A0H Address 555H

Write Program Data/Address

Data Poll
from system

Increment
Address

No
Verify Word Ok ?

YES

No
Last Address ?

YES

Auto Program Completed

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MX29LV008T/B
Figure 5. CE CONTROLLED PROGRAM TIMING WAVEFORM

555 for program

2AA for erase

PA for program
SA for sector erase
555 for chip erase

Data Polling
Address

PA
tWC

tAS
tAH

tWH

WE
tGHEL

OE
tCP
tWHWH1 or 2

CE

tWS

tCPH
tDS

tBUSY
tDH

DQ7 DOUT
Data
tRH

A0 for program
55 for erase

PD for program
30 for sector erase
10 for chip erase

RESET

RY/BY

NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.

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MX29LV008T/B
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after auto-

matic erase starts. Device outputs 0 during erasure

and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)

Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM

Erase Command Sequence(last two cycle)
tWC

2AAh

Address

Read Status Data

tAS

VA

555h

VA

tAH

CE
tCH
tGHWL

OE

tWHWH2

tWP

WE

tCS

tWPH
tDS tDH

55h

In
Progress Complete

10h

Data
tBUSY

tRB

RY/BY

tVCS

VCC

NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").

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MX29LV008T/B
Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 80H Address 555H

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 10H Address 555H

Data Pall from System

NO

Data=FFh ?

YES

Auto Chip Erase Completed

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MX29LV008T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit check-

ing after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)

Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM

Erase Command Sequence(last two cycle)

tWC

2AAh

Address

Read Status Data

tAS

VA

SA

VA

tAH

CE
tCH
tGHWL

OE

tWHWH2

tWP

WE

tCS

tWPH
tDS tDH

55h

In
Progress Complete

30h

Data
tBUSY

tRB

RY/BY

tVCS

VCC

NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").

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MX29LV008T/B
Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 80H Address 555H

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data 30H Sector Address

Last Sector
to Erase

NO

YES
Data Poll from System

Data=FFh

NO

YES

Auto Sector Erase Completed

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MX29LV008T/B
Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART

START

Write Data B0H

NO

ERASE SUSPEND

Toggle Bit checking Q6

not toggled
YES
Read Array or
Program

Reading or
Programming End

NO

YES
Write Data 30H

ERASE RESUME
Continue Erase

Another
Erase Suspend ?

NO

YES

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MX29LV008T/B
Figure 11. SECTOR PROTECT/UNPROTECT TIMING WAVEFORM
VID
VIH

RESET

SA, A6
A1, A0

Valid*

Valid*

Sector Protect or Sector Unprotect

Data

60h
1us

60h

Valid*

Verify
40h

Status

Sector Protect =150us

Sector Unprotect =15ms

CE

WE

OE

Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0.

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MX29LV008T/B
Figure 12. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID

START

PLSCNT=1

RESET=VID

Wait 1us

First Write
Cycle=60H

No

Temporary Sector
Unprotect Mode

Yes
Set up sector address

Write 60H to sector address

with A6=0, A1=1, A0=0

Wait 150us

Verify sector protect :

write 40H with A6=0,
A1=1, A0=0

Increment PLSCNT

Reset PLSCNT=1

Read from sector address

No

PLSCNT=25?

No
Data=01H ?

Yes
Device failed

Yes

Protect another
sector?

Yes

No
Remove VID from RESET

Write reset command

Sector protect complete

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MX29LV008T/B
Figure 13. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID

START

PLSCNT=1

RESET=VID

Wait 1us

First Write
Cycle=60H ?

No

Temporary Sector
Unprotect Mode

Yes

All sector
protected?

No

Protect all sectors

Yes
Set up first sector address

Sector unprotect :
write 60H with
A6=1, A1=1, A0=0

Wait 50ms

Verify sector unprotect

write 40H to sector address

Increment PLSCNT

with A6=1, A1=1, A0=0

Read from sector address

with A6=1, A1=1, A0=0
No

PLSCNT=1000?

No

Yes
Device failed

Set up next sector address

Data=00H ?

Yes

Last sector
verified?

Yes

No
Remove VID from RESET

Write reset command

Sector unprotect complete

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MX29LV008T/B
Figure 14. TIMING WAVEFORM FOR CHIP UNPROTECTION

A1

12V
Vcc 3V
A9
tVLHT

A6

Verify

12V
Vcc 3V
OE
tVLHT

tVLHT
tWPP 2

WE
tOESP

CE

Data

00H

F0H

tOE

A18-A12

Sector Address

Notes: tVLHT (Voltage transition time)=4us min.

tWPP1 (Write pulse width for sector protect)=100ns min.
tWPP2 (Write pulse width for sector unprotect)=100ns min.
tOESP (OE setup time to WE active)=4us min.

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MX29LV008T/B
Figure 15. CHIP UNPROTECTION ALGORITHM

START

Protect All Sectors

PLSCNT=1

Set OE=A9=VID
CE=VIL,A6=1

Activate WE Pulse

Time Out 50ms

Increment
PLSCNT

Set OE=CE=VIL
A9=VID,A1=1

Set Up First Sector Addr

Read Data from Device

No

Data=00H?

Increment
Sector Addr

No
PLSCNT=1000?

Yes

Yes
No

All sectors have

been verified?

Device Failed

Yes
Remove VID from A9
Write Reset Command

Chip Unprotect
Complete

* It is recommended before unprotect whole chip, all sectors should be protected in advance.

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MX29LV008T/B
WRITE OPERATION STATUS
Figure 16. DATA POLLING ALGORITHM

Start

Read Q7~Q0
Add.=VA(1)

Yes

Q7 = Data ?

No
No

Q5 = 1 ?

Yes
Read Q7~Q0
Add.=VA

Yes

Q7 = Data ?
(2)
No
FAIL

Pass

NOTE : 1.VA=Valid address for programming

2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.

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MX29LV008T/B
Figure 17. TOGGLE BIT ALOGRITHM

Start

Read Q7-Q0

Read Q7-Q0

Toggle Bit Q6 =
Toggle ?

(Note 1)

NO

YES

NO
Q5= 1?

YES

Read Q7~Q0 Twice

(Note 1,2)

NO

Toggle bit Q6=

Toggle?

YES

Program/Erase Operation
Not Complete,Write
Reset Command

Program/Erase
operation Complete

Note:1.Read toggle bit twice to determine whether or not it is toggling.

2. Recheck toggle bit because it may stop toggling as Q5 change to "1".

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MX29LV008T/B
Figure 18. Data Polling Timings (During Automatic Algorithms)
tRC

Address

VA

VA

VA

tACC
tCE

CE
tCH
tOE

OE
tOEH

tDF

WE
tOH

DQ7

Complement

Complement

True

Valid Data

Q0-Q6

Status Data

Status Data

True

Valid Data

High Z

High Z

tBUSY

RY/BY

NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.

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MX29LV008T/B
Figure 19. Toggle Bit Timings (During Automatic Algorithms)

tRC

VA

VA

Address

VA

VA

tACC
tCE

CE
tCH
tOE

OE
tDF

tOEH

WE
tOH

High Z

Q6/Q2

Valid Status

Valid Data

(second read)

(stops toggling)

Valid Status
(first raed)

Valid Data

tBUSY

RY/BY

NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.

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MX29LV008T/B
Table 11. AC CHARACTERISTICS
Parameter Std

Description

Test Setup All Speed Options Unit

tREADY1

RESET PIN Low (During Automatic Algorithms)

MAX

20

us

MAX

500

ns

to Read or Write (See Note)

tREADY2

RESET PIN Low (NOT During Automatic

Algorithms) to Read or Write (See Note)

tRP

RESET Pulse Width (During Automatic Algorithms)

MIN

500

ns

tRH

RESET High Time Before Read(See Note)

MIN

50

ns

tRB

RY/BY Recovery Time(to CE, OE go low)

MIN

ns

Note:Not 100% tested

Figure 20. RESET TIMING WAVFORM

RY/BY

CE, OE
tRH

RESET
tRP
tReady2

Reset Timing NOT during Automatic Algorithms

tReady1

RY/BY
tRB

CE, OE

RESET
tRP

Reset Timing during Automatic Algorithms

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MX29LV008T/B
Table 12. TEMPORARY SECTOR UNPROTECT
Parameter Std.

Description

Test Setup

AllSpeed Options Unit

tVIDR

VID Rise and Fall Time (See Note)

Min

500

ns

tRSP

RESET Setup Time for Temporary Sector Unprotect

Min

us

Note:
Not 100% tested

FIgure 21. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM

12V

RESET
0 or Vcc

0 or Vcc
Program or Erase Command Sequence

tVIDR

tVIDR

CE

WE
tRSP

RY/BY

Figure 22. Q6 vs Q2 for Erase and Erase Suspend Operations

Enter Embedded
Erasing

Erase
Suspend

Enter Erase
Suspend Program

Erase

WE

Erase
Resume
Erase
Suspend
Program

Erase Suspend
Read

Erase

Erase
Complete

Q6

Q2

NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended

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MX29LV008T/B
Figure 23. TEMPORARY SECTOR UNPROTECT ALGORITHM

Start

RESET = VID (Note 1)

Perform Erase or Program Operation
Operation Completed
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)

Note : 1. All protected sectors are temporary unprotected.

VID=11.5V~12.5V
2. All previously protected sectors are protected again.

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MX29LV008T/B
Figure 24. ID CODE READ TIMING WAVEFORM
VCC

3V

ADD

VID
VIH

A9

VIL

ADD
A0

VIH
VIL
tACC

tACC

VIH

A1
VIL

ADD
A2-A8
A10-A19
CE

VIH
VIL

VIH
VIL

WE

VIH

tCE

VIL

OE

VIH

tOE

VIL

tDF
tOH

tOH

VIH

DATA
Q0-Q7

DATA OUT

DATA OUT

VIL

DAH/5BH

C2H

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MX29LV008T/B
ERASE AND PROGRAMMING PERFORMANCE(1)
LIMITS
TYP.(2)

MAX.(3)

UNITS

Sector Erase Time

0.7

15

sec

Chip Erase Time

14

Byte Programming Time

300

us

27

sec

PARAMETER

Chip Programming Time

MIN.

Byte Mode

Erase/Program Cycles

Note:

sec

100,000

Cycles

1.Not 100% Tested, Excludes external system level over head.

2.Typical values measured at 25C, 3V.
3.Maximum values measured at 25C, 2.7V.

LATCHUP CHARACTERISTICS
MIN.

MAX.

Input Voltage with respect to GND on all pins except I/O pins

-1.0V

12.5V

Input Voltage with respect to GND on all I/O pins

-1.0V

Vcc + 1.0V

-100mA

+100mA

Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.

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MX29LV008T/B
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.

ACCESS TIME

OPERATING CURRENT

STANDBY CURRENT

(ns)

MAX.(mA)

MAX.(uA)

MX29LV008TTC-70

70

30

40 Pin TSOP

MX29LV008TTC-90

90

30

40 Pin TSOP

MX29LV008BTC-70

70

30

40 Pin TSOP

MX29LV008BTC-90

90

30

40 Pin TSOP

MX29LV008TTI-70

70

30

40 Pin TSOP

MX29LV008TTI-90

90

30

40 Pin TSOP

MX29LV008BTI-70

70

30

40 Pin TSOP

MX29LV008BTI-90

90

30

40 Pin TSOP

P/N:PM0718

PACKAGE

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MX29LV008T/B
PACKAGE INFORMATION
40-PIN PLASTIC TSOP

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MX29LV008T/B
REVISION HISTORY
Revision No. Description
1.0
Changed heading as "PRELIMINARY"
Correct mis-typing

Page
Date
P1
JUL/31/2001
P5,10~12,19,20
22,24,47
P24

Change tBUSY spec from 90us to ns

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MX29LV008T/B

MACRONIX INTERNATIONAL CO., LTD.

HEADQUARTERS:
TEL:+886-3-578-6688
FAX:+886-3-563-2888

EUROPE OFFICE:
TEL:+32-2-456-8020
FAX:+32-2-456-8021

JAPAN OFFICE:
TEL:+81-44-246-9100
FAX:+81-44-246-9105

SINGAPORE OFFICE:
TEL:+65-348-8385
FAX:+65-348-8096

TAIPEI OFFICE:
TEL:+886-2-2509-3300
FAX:+886-2-2509-2200

MACRONIX AMERICA, INC.

TEL:+1-408-453-8088
FAX:+1-408-453-8488

CHICAGO OFFICE:
TEL:+1-847-963-1900
FAX:+1-847-963-1909

http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.

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