H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection,
High BVCER Voltage
Features
CTR at IF = 10 mA, BVCER = 10 V: 20 %
Good CTR Linearly with Forward Current
Low CTR Degradation
Very High Collector-Emitter Breakdown Voltage
- H11D1/H11D2, BVCER = 300 V
- H11D3/H11D4, BVCER = 200 V
Isolation Test Voltage: 5300 VRMS
Low Coupling Capacitance
High Common Mode Transient Immunity
Package with Base Connection
Agency Approvals
UL - File No. E52744 System Code H or J
DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
BSI IEC60950 IEC60965
FIMKO
Applications
Telecommunications
Replace Relays
Description
The H11D1/ H11D2/ H11D3/ H11D4 are optocouplers with very high BVCER. They are intended for
telecommunications applications or any DC application requiring a high blocking voltage.
6 B
5 C
NC
4 E
i179004
The H11D1/ H11D2 are identical and the H11D3/
H11D4 are identical.
Order Information
Part
Remarks
H11D1
CTR > 20 %, DIP-6
H11D2
CTR > 20 %, DIP-6
H11D3
CTR > 20 %, DIP-6
H11D4
CTR > 20 %, DIP-6
H11D1-X007
CTR > 20 %, SMD-6 (option 7)
H11D1-X009
CTR > 20 %, SMD-6 (option 9)
H11D2-X007
CTR > 20 %, SMD-6 (option 7)
H11D3-X007
CTR > 20 %, SMD-6 (option 7)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Document Number 83611
Rev. 1.3, 16-Apr-04
t 10 s
Symbol
Value
Unit
VR
6.0
V
mA
IF
60
IFSM
2.5
Pdiss
100
mW
www.vishay.com
1
H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
Output
Parameter
Test condition
Collector-emitter voltage
Part
Symbol
Value
Unit
H11D1
VCE
300
H11D2
VCE
300
H11D3
VCE
200
H11D4
VCE
200
H11D1
VCBO
300
H11D2
VCBO
300
H11D3
VCBO
200
H11D4
VCBO
200
VBEO
7.0
Collector current
IC
100
mA
Power dissipation
Pdiss
300
mW
Collector-base voltage
Emitter-base voltage
Coupler
Parameter
Test condition
Symbol
Value
Unit
VISO
5300
VRMS
Insulation thickness between
emitter and detector
0.4
mm
Creepage distance
7.0
mm
Clearance distance
7.0
mm
Comparative tracking index (per
DIN IEC 112/VDE 0303, part 1)
175
Isolation test voltage (between
emitter and detector, refer to
climate DIN 50014, part 2,
Nov. 74)
Isolation resistance
VIO = 500 V, Tamb = 25 C
RIO
1012
VIO = 500 V, Tamb = 100 C
RIO
11
10
Storage temperature range
Tstg
- 55 to + 150
Operating temperature range
Tamb
- 55 to + 100
Tj
100
Tsld
260
Junction temperature
Soldering temperature
max. 10 sec., dip soldering:
distance to seating plane
1.5 mm
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Forward voltage
IF = 10 mA
VF
Reverse voltage
IR = 10 A
VR
Min
Typ.
Max
1.1
1.5
6.0
Unit
V
V
VR = 6.0 V
IR
0.01
VR = 0 V, f = 1.0 MHz
CO
25
pF
Rthja
750
K/W
Thermal resistance
www.vishay.com
2
10
Reverse current
Capacitance
Document Number 83611
Rev. 1.3, 16-Apr-04
H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
Output
Parameter
Test condition
Collector-emitter breakdown
voltage
ICE = 1.0 mA, RBE = 1.0 M
Part
Symbol
Min
H11D1
BVCER
300
Typ.
Max
Unit
V
H11D2
BVCER
300
H11D3
BVCER
200
H11D4
BVCER
200
BVEBO
7.0
Emitter-base breakdown
voltage
IEB = 100 A
Collector-emitter capacitance
VCE = 10 V, f = 1.0 MHz
CCE
7.0
Collector - base capacitance
VCB = 10 V, f = 1.0 MHz
CCB
8.0
pF
Emitter - base capacitance
VEB = 5.0 V, f = 1.0 MHz
CEB
38
pF
Rth
250
K/W
Thermal resistance
pF
Coupler
Parameter
Test condition
Part
Coupling capacitance
Symbol
Min
Typ.
Current Transfer Ratio
IF = 10 mA, VCE = 10 V,
RBE = 1.0 M
IC/IF
Collector-emitter, saturation
voltage
IF = 10 mA, IC = 0.5 mA,
RBE = 1.0 M
VCEsat
Collector-emitter leakage
current
VCE = 200 V, RBE = 1.0 M
VCE = 300 V, RBE = 1.0 M,
TA = 100 C
Max
0.6
CC
Unit
pF
20
%
0.25
0.4
V
nA
H11D1
ICER
100
H11D2
ICER
100
nA
H11D1
ICER
250
H11D2
ICER
250
Current Transfer Ratio
Parameter
Test condition
IF = 10 mA, VCE = 10 V,
RBE = 1.0 M
Current Transfer Ratio
Symbol
Min
CTR
20
Min
Typ.
Max
Unit
%
Switching Characteristics
Switching times measurement-test circuit and waveforms
Test condition
Symbol
Turn-on time
Parameter
IC = 2.0 mA (to be adjusted by varying IF),
RL = 100 , VCC = 10 V
ton
5.0
Rise time
IC = 2.0 mA (to be adjusted by varying IF),
RL = 100 , VCC = 10 V
tr
2.5
Turn-off time
IC = 2.0 mA (to be adjusted by varying IF),
RL = 100 , VCC = 10 V
toff
6.0
Fall time
IC = 2.0 mA (to be adjusted by varying IF),
RL = 100 , VCC = 10 V
tf
5.5
Document Number 83611
Rev. 1.3, 16-Apr-04
Typ.
Max
Unit
www.vishay.com
3
H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.2
30
25
0.8
20
0.6
15
I CE /mA
NTCR
ICE = f (VCE, IF)
0.4
VCE =10 V,
normalized to IF = 10 mA,
NCTR = f (IF)
0.2
10
10-4
10-2
10-3 I /A
F
ih11d1_02
0
10-2
10-1
ih11d1_05
Fig. 1 Current Transfer Ratio (typ.)
10-1
100
101
102
Fig. 4 Output Characteristics
1.2
100
VCE /V
VF = f (IF, TA)
f=1.0 MHz,
CCE=f (VCE)
CCB=f (VCB), CEB=f (VEB)
90
80
70
VF /V
1.1
60
50
40
CXX /pF
1.0
30
20
10
0.9
ih11d1_03
10 -1
0
I F /mA
10
2
5 mA 10
10 1
Fig. 2 Diode Forward Voltage (typ.)
ih11d1_06
0
10-2
10-1
VXX /V
100
101
102
Fig. 5 Transistor Capacitances (typ.)
20
10-6
ICE = f (VCE, IB)
17.5
IF=0, RBE=1.0 M,
ICER=f(VCE)
10-7
15
10-8
12.5
10-9
7.5
CCER /A
I CE /mA
10
-11
10
2.5
0
10-2
ih11d1_04
10-1
VCE /V
Fig. 3 Output Characteristics
www.vishay.com
4
-10
10
100
101
10-120
102
ih11d1_07
25
50
75
100
125
150
175
200
VCE /V
Fig. 6 Collector-Emitter Leakage Current (typ.)
Document Number 83611
Rev. 1.3, 16-Apr-04
H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
400
100
IF = f (TA)
90
Ptot = f (TA)
350
80
300
70
250
60
200
Ptot /mW
IF /mA
50
40
30
150
100
20
50
10
0
0
0
10
20
ih11d1_08
30
40
TA /C
50
60
70
80
90
100
10
20
ih11d1_09
30
40
TA /C
50
60
70
80
90
100
Fig. 8 Permissible Power Dissipation
Fig. 7 Permissible Loss Diode
Input
0
IF
toff
ton
RL
IC
47
tpdoff
tpdon
VCC
VO
GND
td
Output
10%
tr
ts
tr
10%
50%
50%
90%
90%
ih11d1 _01
Fig. 9 Switching Times Measurement-Test Circuit and Waveform
Document Number 83611
Rev. 1.3, 16-Apr-04
www.vishay.com
5
H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4
typ.
.018 (0.45)
.022 (0.55)
18
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
39
.010 (.25)
typ.
.300.347
(7.628.81)
.114 (2.90)
.130 (3.0)
i178004
Option 7
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
TYP.
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
www.vishay.com
6
.0098 (.249)
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15 max.
18494
Document Number 83611
Rev. 1.3, 16-Apr-04
H11D1/ H11D2/ H11D3/ H11D4
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83611
Rev. 1.3, 16-Apr-04
www.vishay.com
7
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
