30 Eth 06
30 Eth 06
30 Eth 06
D 08/01
30ETH06
30ETH06S
30ETH06-1
Hyperfast Rectifier
Features
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Max
Units
600
@ TC = 103C
30
@ TJ = 25C
200
VRRM
IF(AV)
IFSM
TJ, TSTG
- 65 to 175
Case Styles
30ETH06
30ETH06S
30ETH06-1
Base
Cathode
Base
Cathode
Cathode
TO-220AC
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Anode
D2PAK
Anode
N/C
Anode
N/C
TO-262
1
Breakdown Voltage,
Blocking Voltage
VF
Forward Voltage
IR
IR = 100A
2.0
2.6
IF = 30A, TJ = 25C
1.34 1.75
IF = 30A, TJ = 150C
0.3
50
VR = VR Rated
60
500
TJ = 150C, VR = VR Rated
CT
Junction Capacitance
33
pF
VR = 600V
LS
Series Inductance
8.0
nH
28
35
31
77
IRRM
3.5
7.7
Qrr
65
345
ns
IF = 30A
VR = 200V
TJ = 125C
A
TJ = 25C
nC
TJ = 25C
TJ = 125C
TJ = 125C
Typ
Max
Units
TJ
Parameters
Max. Junction Temperature Range
- 65
175
TStg
- 65
175
RthJC
RthJA
RthCS
"
Wt
Per Leg
0.7
1.1
Per Leg
70
0.2
Weight
2.0
0.07
(oz)
6.0
12
Kg-cm
5.0
10
lbf.in
Mounting Torque
C/W
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1000
100
Tj = 175C
150C
100
125C
10
100C
1
0.1
25C
0.01
0.001
0.0001
0
100
200
300
400
500
600
1000
Junction Capacitance - C T (pF)
1000
T = 175C
J
10
T = 150C
J
T = 25C
J
T J = 25C
100
10
0.5
1.5
2.5
3.5
100
200
300
400
500
600
10
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.001
0.00001
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
10
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90
Average Power Loss ( Watts )
180
160
140
DC
120
Square wave (D = 0.50)
100 Rated Vr applied
see note (3)
80
RMS Limit
70
60
DC
50
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
40
30
20
10
0
80
0
5 10 15 20 25 30 35 40 45
5 10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
90
1200
V R = 200V
T J = 125C
T J = 25C
IF = 30 A
IF = 15 A
80
1000
70
800
Qrr ( nC )
trr ( ns)
60
50
40
30
IF = 30 A
IF = 15 A
600
400
20
200
10
V R = 200V
T J = 125C
T J = 25C
0
100
1000
di F /dt (A/s )
0
100
1000
di F /dt (A/s )
Fig. 8 - Typical Stored Charge vs. di F /dt
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VR = 200V
0.01
L = 70H
D.U.T.
diF /dt
dif/dt
ADJUST
D
IRFP250
trr
IF
tb
ta
Q rr
I RRM
0.5 I RRM
di(rec)M/dt
0.75 I RRM
1
diFf /dt
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Outline Table
10.54 (0.41)
MAX.
1.32 (0.05)
3.78 (0.15)
3.54 (0.14)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
1
1.22 (0.05)
DIA.
Base
Cathode
6.48 (0.25)
6.23 (0.24)
2
1
14.09 (0.55)
3.96 (0.16)
13.47 (0.53)
3.55 (0.14)
Cathode
Anode
0.10 (0.004)
2.89 (0.11)
1.15 (0.04)
0.94 (0.04)
2.64 (0.10)
0.69 (0.03)
4.57 (0.18)
4.32 (0.17)
N/C
Anode
NC
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Outline Table
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
Base
Cathode
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
15.49 (0.61)
93
14.73 (0.58)
5.28 (0.21)
2.61 (0.10)
4.78 (0.19)
2.32 (0.09)
0.55 (0.02)
8.89 (0.35)
3X
6.18 (0.24)
REF.
1.40 (0.055)
1.14 (0.045)
2X
0.46 (0.02)
0.93 (0.37)
0.69 (0.27)
N/C
Anode
11.43 (0.45)
3
4.57 (0.18)
8.89 (0.35)
4.32 (0.17)
2
17.78 (0.70)
3.81 (0.15)
2.08 (0.08)
2X
2.54 (0.10)
2X
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30
06
-1
= Single Diode
= TO-220, D2Pak
= HyperFast Recovery
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 08/01
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