Bolomoters Running Backward 2006
Bolomoters Running Backward 2006
Bolomoters Running Backward 2006
1. INTRODUCTION
Uncooled micro-bolometer technology is now ubiquitous in the infrared sensor world. Ever-improving radiometric
performance and the emergence of multiple component- and system-level producers has turned this niche thermal
imaging market segment into a growing and competitive marketplace. Utilizing 3-D bridge structures to suspend
individual resistor elements above a CMOS readout array, modern microbolometers typically require a combination of
licensed and proprietary MEMS materials, fabrication processes, and design techniques. To enable the advancement of
next-generation thermal imaging devices, microbolometer R&D continues at a rapid pace, with smaller and higherperformance MEMS pixel technologies at the cutting-edge.
IR scene projection (IRSP) development began in the 1970s, with early filaments and Bly cells eventually replaced with
*
resistive arrays based on the same core microbolometer MEMS pixel technology originally developed for IR sensing
applications. Resistive arrays provide a unique IR simulation capability, due to their combination of wide radiometric
dynamic range and high thermal resolution. Now commonly used in a variety of hardware-in-the-loop (HWIL) test
applications, resistive array based IR scene projection (IRSP) systems have benefited greatly from the development of
microbolometer technology. Interestingly, IRSP technology has now reached the point at which unique innovations in
MEMS pixel design and fabrication are flowing back into the IR world, with applications and potential benefits in both
sensor and projector communities.
Figure 1 Typical Resistive Emitter Pixel Architecture (left) & Electronic Drive Scheme (right)
Microbolometer and resistive emitter arrays usually require thermal stabilization, although for different reasons. Selfheating and/or thermal drift in microbolometer arrays results in image artifacts, and thereby limits radiometric
performance. As we will discuss in more detail later, the large drive currents employed in running resistive arrays to
useful simulated IR temperatures give rise to very high levels of array power dissipation and spatial power density. For
reasons associated with both elimination of image artifacts and prevention of overheating/damage to the scene projector,
resistive emitter arrays are generally liquid-cooled.
The optical interfaces to bolometer and emitter arrays are similar in that they both require specific optics with sufficient
transmission, low aberration and distortion, high MTF, etc. Microbolometer optical systems are typically designed to
strike a balance between performance, mass, cost, and other constraints associated with development of highperformance, compact EO systems. IR scene projection optics, on the other hand, are usually driven by the need for the
IRSP system to introduce minimal degradation into the imagery, with mass and cost often considered secondary to
performance. As such, the worlds of sensor and projector optics share much of the same basic technical emphasis, with
a dramatically different emphasis on size, weight, and cost. As we will discuss later, novel designs incorporating
modularity and zoom functions are facilitating the development of sensors and projectors alike. Figure 2a shows a
typical emitter pixel and projected image, while Figure 2b shows a typical mircobolometer pixel and core imagery.
Figure 2a Resistive Emitter Pixel (left) & Projected MWIR Image (right)
(courtesy of Santa Barbara Infrared)
While most microbolometer arrays convert photons into analog video signals, emitter arrays convert 16-bit digital scene
data into an array of unique analog current levels applied to each emitter. Although the sensor community is
increasingly incorporating A/D conversion into ROIC designs, IRSP arrays have included on-chip, 14- or 15-bit DACs
since the 1990s. This early shift to an all-digital data interface was driven by the difficulty of optimizing the analog
interface between a high frame rate emitter array and a remotely located DAC (or even multi-DAC) subsystem.
Latency compensation is often implemented as a set of real-time azimuth/elevation/rotation parameters sent from the
simulation processor to a point near the output of the IRSP data path, enabling x, y, and rotation to updated based on
current UUT attitude.
2.3. IRSP Performance Drivers
(or, Scene projector performance: How much is enough?)
For modern IRSP systems, array format is often required to be at least 10242 in order to support the more stressing test
applications. Pixel size has held constant at approximately 50 m, due largely to concerns associated with LWIR
output/diffraction and pixel fill factor. Frame update rates are typically supported in the range of 20-400 Hz, thereby
allowing simulation at integer multiple of the UUT frame rate and minimizing spatial-temporal sampling artifacts. Both
snapshot and raster update modes allow optimum synchronization with both scanning and staring sensors under test.
The maximum apparent (simulated) temperature of production IRSP systems is currently in the range of 700-800 K
(MWIR) and 500-600 K (LWIR). Development is already underway to extend the upper end of the simulated
temperature range to at least 2500 K the effective temperature of a late M-class star! While maximum apparent
temperatures are rising, some HWIL applications such as space-based interceptor T&E require minimum simulated
temperatures in the cryogenic regime. This of course requires an array specifically designed to operate with very low
substrate temperature, yet with top-end radiant output comparable to traditional systems.
Typically, each pixels radiance rise/fall time must be less than approximately 5 ms, and scene-dependent cross talk must
be less than 1-3%. Operability must be greater than 99%, and cluster defects maintained to an acceptable level. Pixel
substitution and interpolation functions available to sensors offer nothing to improve imagery projected by IRSP systems
no photons at a given emitter location means no radiant output, period. IRSP operability is thus a tremendous
challenge, exacerbated by increasing array formats and the inherent difficulty of fabricating MEMS devices
monolithically onto CMOS wafers.
Figure 5 illustrates the chronology of resistive array development for IR scene projection. The history of resistive arrays
began with the early 128 x 128 Electro-Optek device, and evolved to the 1282, 5122, and 10242 offerings from BAe and
the 1282, 5122, and 672 x 544 (DIRSP) configurations produced by Honeywell. After purchasing an exclusive license to
the Honeywell MEMS/emitter technology in 2001, Santa Barbara Infrared is now the industry leader in IRSP, with 5122
cryogenic 5122, and 10242 systems in production, and a wide-format 768 x 1536 system in development.
C(T )
dTphys
4
4
= I 2 R(T )" G(T )[Tphys " Tsub ]" g[Tphys " Tbg ]
dt
[1]
As (a) the thermal derivative goes to zero and (b) the device is operated in a temperature regime limited by conductive
losses (i.e. real world temperatures for current microbolometers
and emitters), we are left with the fundamental steady!
!
state equation relating pixel power to conductive losses:
[2]
For an emitter driven to a given physical temperature per equation [1] or [2], the pixels simulated (apparent)
temperature may be computed by solving for the variable Tapp in the following equation:
!" 2
"2
# B (T
"
"1
app
[3]
"1
where 1 and 2 are the lower and upper spectral band edges, B(T) is the spectral radiant emittance (Planck function), ff
is the pixels optical fill factor, OPT is the transmission of the projection optics and package window(s), and () is the
pixels spectral emissivity.
! The design of emitters as with microbolometers is complicated by the fact that critical
material parameters such as heat capacity and thermal conductance are sensitive to process variations. Emitter design is
further complicated by the fact that (a) multiple parameters depend upon instantaneous physical temperature and (b)
each pixel must operate over a temperature range of 700-800 K.
courtesy of BAe
In addition to handling the extreme temperature environment required for IRSP, emitters must also provide a high degree
of physical robustness, good radiometric stability, and high array operability. As with bolometers, a successful emitter
design and material set must provide high IR emissivity (absorption), suitable thermal conductance to substrate, and low
pixel heat capacity. Who said it would be easy?
Figure 7 1024 x 1024 Scene Projection Core (left) & Thermal Distribution Across Array (right)
(courtesy of Santa Barbara Infrared)
As temperature requirements become more stressing and emerging sensors demand higher-resolution emitter array
formats it is clear that these thermal and electrical design solutions must continue to improve for future IRSP systems.
5. SENSOR/PROJECTOR SYNERGY
(or, Two Niche Communities Are Better than One)
The continuing arms race between sensors and test systems has historically resulted in the cross-pollination of key
MEMS, electronics, and optics technologies. Next-generation FLIRs, trackers, visible imagers, and laser range finders
are contributing advancements to the scene projector realm and vice versa, as illustrated in Figure 8.
Pixel uniformity, operability, and device architecture are evolving for both microbolometers and emitters. New highspeed digital video processing technologies are enabling new sensor and projector capabilities. Improvements in optical
system design are facilitating the efficient development of new sensors, and improving the flexibility of IR scene
projectors. Together, these complementary developments will continue to benefit both sensors and projectors.
5.1. Pixel Uniformity & Operability
(or, Why is nobody else trying to make 2 x 2-inch bolo arrays?)
The monolithic MEMS fabrication processes used in microbolometer and emitter production are complex, sensitive, and
costly. Fabrication time is generally on the order of 3-6 months, with many adjustment and tuning steps involved.
Although many MEMS technology licensees work to improve and optimize the core process(es), numerous variability
and defect mechanisms give rise to uniformity and operability limitations which in turn drive yield, cost, and lead time.
Non-uniformity correction (NUC) is applied in both sensors and projectors to improve spatial uniformity at the expense
of dynamic range. However, the sophisticated pixel substitution and interpolation functions routinely implemented in
modern sensors are simply not possible in the projector domain no output, no projected pixel!
Figure 11 Hyperspectral Data Cube (left) & High-Resolution IRSP Imagery (right)
collimator. Full zoom capability provides maximum flexibility to match the projected image to the UUT with ease of
re-configuration and minimal re-alignment time. Figures 12a and 12b illustrate modular and zoom architectures
High-resolution UUTs are being addressed by emitter arrays of 768 x 1536 pixels, and beyond. 3rd-gen FLIRs and
broadband imaging suites are currently supported by optically combined IRSPs, with photonic crystals, laser diode
arrays, and other simulation technologies in development. Hyperspectral sensors have spawned a series of novel
arbitrary spectrum generators, capable of projecting distinct tuned spectra for each pixel location in a line image, with
area projection under development. Extended dynamic range sensors are currently addressed by resistive arrays
combined with discrete, scanned laser spots. For the future, technologies such as laser diode/VCSEL arrays and UVVIS-IR plasmas are in development. Laser-driven projection of sub-image pixel clusters formed and steered by 2-D
analog mirror-based MEMS arrays will enable high frame rate simulation for emerging UUTs. 3-D imaging/LADAR
simulation poses one of the most difficult scene projection challenges, although a variety of approaches are being
explored including laser diode and VCSEL arrays with vertically integrated electronic control, leveraging ongoing
developments in the sensor realm.
SUMMARY
Resistive arrays for IR scene projection evolved from the early days of microbolometer development, and currently offer
a unique IR simulation capability. While bolometers and emitters are limited by the same thermal and physical
constraints, MEMS advancements are pushing both bolometer and emitter technologies forward. The cross-pollination
of electronic and optical technologies and architectures further increases the pace of development and the feasibility of
the most challenging sensor and projector solutions. This trend will surely continue, to the benefit of sensor and
simulation system developers worldwide.
ACKNOWLEDGMENTS
The authors gratefully acknowledge the consultation and assistance of Santa Barbara Infrared, RTI International,
Raytheon Vision Systems, StingRay Optics, the Tri-Services IRSS P3I Program, Air Force Research Lab, Missile
Defense Agency, Dr. Owen Williams, Mr. Tom Joyner, and Sophie the cat.
REFERENCES
1.
O. Williams, G. Goldsmith, & R. Stockbridge, History of Resistor Array Infrared Projectors: Hindsight is Always
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2.
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4.
S. Solomon, R. Ginn, S. Campbell, M. Jalali, G. Goldsmith II, High Temperature Materials for Resistive IRSPs,
Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XI, Proceedings SPIE (2006).
5.
D. Murphy, M. Ray, A. Kennedy, J. Wyles, C. Hewitt, R. Wyles, E. Gordon, T. Sessler, S. Baur, D. Van Lue, S.
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