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A Practical Method For Measurement of High-Power LEDs

This document presents a new method for measuring high-power LEDs that addresses limitations of existing standards. The method sets the heat sink temperature to achieve a desired junction temperature for the LED. A pulse current is applied to measure the forward voltage, then optical properties are measured at steady-state under DC current. This allows measurement of LED performance at any junction temperature. Results from pulse and DC measurements under the same conditions were found to match closely, validating the approach. The method could be adopted in standards like IESNA and CIE to provide an approved technique for characterizing high-power LEDs under different thermal conditions.

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196 views14 pages

A Practical Method For Measurement of High-Power LEDs

This document presents a new method for measuring high-power LEDs that addresses limitations of existing standards. The method sets the heat sink temperature to achieve a desired junction temperature for the LED. A pulse current is applied to measure the forward voltage, then optical properties are measured at steady-state under DC current. This allows measurement of LED performance at any junction temperature. Results from pulse and DC measurements under the same conditions were found to match closely, validating the approach. The method could be adopted in standards like IESNA and CIE to provide an approved technique for characterizing high-power LEDs under different thermal conditions.

Uploaded by

berker_yurtseven
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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CORM 2008, Rensselaer Polytechnic Institute (RPI), Troy, NY, June 9-12, 2008

New practical method


for measurement of high-power LEDs

Yuqin Zong and Yoshi Ohno


National Institute of Standards and Technology
Gaithersburg, Maryland

Temperature Dependence of a High-power LED


1.10

10000

S1 at 350 mA dc forward current

9500

1.05

9000
8500
0.95

8000

0.90

7500
7000

0.85

6500
0.80

Voltage (V)

6000

Luminous Flux (lm)

0.75

5500

CCT (K)
0.70

5000
5

15

25

35

45

55

65

Heat Sink Temperature (C)

75

85

95

CCT (K)

Voltage and Flux


normalized to T=25 C

1.00

Temperature issue in High-Power LED Measurements

However, SSL product manufacturers use LEDs typically


at much higher operating temperature.

Gaps to fill
LED manufacturers: Pulse measurement at Ta=Tj=25C
(Cold LED condition)

Lighting industry (traditional lamp manufacturers, Luminaire


manufacturers, testing laboratories):
DC measurement at Ta=25C.(LED thermal condition not defined)
(Condition in LM-79, CIE 127 does not apply to high-power LEDs)

LEDs in ANY conditions (Tj of 10C ~ 100C) need


to be measured.

Existing Measurement Standards


CIE 127:2007
LED devices/packages

does not address issues on


high power LEDs
CIE TC2-46, TC2-58
CIE R2-36

We need a new, practical method


for high-power LED measurements

Simple Approach for High-Power LED Measurement

Use a metal-core PC board

Mount to a temperature-controlled
heat sink (10 - 100 C).

Measure high power LEDs at a full


DC current at thermal equilibrium,
or at short pulse.

Selection of the Temperature Reference


- Heat sink temperature
- Pin temperature
- Case temperature
- Board temperature
.

Not always available,


Not always reproducible,
Not always comparable,
Extra cost for the probe,
.

Junction temperature (Tj) is the physical quantity of


an LED that reproduces exactly the LED operating
condition universally, anywhere.

How to set, measure, and control the Tj?

The New Practice Method

Set the heat sink


temp. to desired Tj
and stabilize it.

Apply pulse
current, and
measure VF,j

Feedback control
of heat sink
temperature

Optical quantities
measurement at Tj
(in DC mode)

Rated current
VF,j

VF,j
VF

a few min.

a few sec.
Tj

VF,j

a few min.

LED Heating Curves


Un-mounted
1.02

1.01

1.01

1.00

1.00

Relative Value

Relative Value

1.02

0.99
0.98
LED I
LED Vf
DET Sig

0.97

0.99
0.98
0.97
0.96

0.96
0.95
0.000

LED I
LED Vf
DET Sig

0.95
0.010

0.020

0.030

0.040

0.050

0.060

0.070

0.080

0.090

0.100

10

20

Time (s)

40

60

1.02
1.01

1.00

1.00

Relative Value

1.01

0.99
0.98
LED I

0.97

0.99
0.98
0.97

LED I

0.96

LED Vf
DET Sig

LED Vf
DET Sig

0.96
0.95
0.000

50

Mounted on a temperature-controller heat sink

1.02

Relative Value

30
Time (s)

0.95

0.010

0.020

0.030

0.040

0.050
Time (s)

0.060

0.070

0.080

0.090

0.100

10

20

30
Time (s)

40

50

60

Comparison of DC and Pulse Results under the same Vf


Ratio of DC to pulse
1.05
1.04
1.03
1.02

DC/Pulse

A phosphor-based
white LED:
If = 350 (mA),
Vf = 3.672 (V)

1.01
1.00
0.99
0.98

0.97
0.96
0.95
400

450

500

550

600

650

700

Wavelength (nm)

Chromaticity x (DC-Pulse)

-0.0001

Chromaticity y (DC-Pulse)

0.0001

Chromaticity u (DC-Pulse)

0.0001

Chromaticity v (DC-Pulse)

0.0002

CCT (K) (DC-Pulse)

-3.1

Color Rendering Index (Ra) (DC-Pulse)

0.04

Luminous flux (DC/Pulse)

1.0002

Radiant flux (DC/Pulse)

0.9998

Pulse: before thermal equilibrium.


DC: after thermal equilibrium.

Pulse and DC measurements yield


the same results!!

Application of This Method


- IESNA, to develop a LM-xx Approved Method
for Photometric Measurement of High Power LEDs.
Develop a draft in ANSI SSL WG, then forward to the
SSL subcommittee in IESNA Testing Procedures
Committee.

- CIE
-

Summary
We have developed a new, practical method for measurement
of high-power LEDs.
The reference condition is the LED junction temperature,
which makes mounting method and thermal resistance
between the LED and heat sink to be irrelevant to the result.
LED can be measured at any junction temperature.
Pulses are used ONLY to determine the electrical forward
voltage. Optical quantities are measured (typically slow and
more difficult) in a normal DC operating condition.
Can also be used for measuring LED arrays.
The whole measurement process can be fully automated.

ACKNOWLEDGMENTS
Thank Dr. Cameron Miller, the DOE, Cree, Nichia,
and Seoul Semiconductor,

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