EE2005 - Tutorial Homework Assignment 9 Solution
EE2005 - Tutorial Homework Assignment 9 Solution
the gain is unity and there is no positive zero in the transfer function.
(5 marks)
s
+1
1
2
50
kHz
(
)
H s =
s
s
+1
+1
2 300 Hz
2 300 kHz
2. Consider the amplifier shown in Fig. 9-2. Assume the BJT has =100, VA=100V.
Use the following model to verify your simulation results:
.model nbjt NPN is=3.3e-15 bf=100 rb=62.5 tf=1n cje=0.45p cjc=2p itf=1m xtf=5 vtf=10 vaf=100
(a) Design RE so that the small signal AC gain (AV=vo/vs) is 10.
(2 marks)
(4 marks)
(b) Design CS, CL and CB so that the fL is 200Hz.
(c) Create the netlist for the circuit below.
(2 marks)
(d) What is your simulated AV and fL?
(2 marks)
(e) Supposed Q1 is replaced with MOSFET M1 with the following device characteristics,
Kn=2mA/V2, VTHN=0.5V, and no body effect.
(2 marks)
What would be the required Ibias in order to maintain the same AV?
(f) Comment on the effect of CB on fL for part (e).
(3 marks)
10V
10V
RE
R1
100k
CL
Rx
vo
RL
Q1
CB
100k
R2
100k
RS
50
CS
Ibias
vs
100A
Rin
Fig. 9-2
IC
(a) g
= 4mA / V
m , Q1 =
VT
AV =
ro , Q1 =
VA
= 1M
IC
Rin =
1
g m , Q1
ro , Q1 + RE // RL
1
= 250
//
R RL g m , Q1
ro , Q1 + E
vo
Rin
Rin
=
g m , Q1 (RE // Rx // RL )
g m , Q1RE = 10 RE = 3k
vs Rin + RS
Rin + RS
1
(b)
2f L = b1 =
CL
CS
CB
= 2 200 Hz
CS
CS
dominant
C L and C B can be chosen such that CL , CB >> CS , for example 10 times larger
As Req , CL , Req , CB >> Req , CS , pick C L = C B = 10 F will meet the above criteria
(c)
*hw9 question 2
vs A 0 AC 1
Rs A B 50
Cs B C 2.65u
Ibias C 0 100u
Q1 D E C nbjt
R1 F E 100k
R2 E 0 100k
CB E 0 10u
RE F D 3k
CL D G 10u
RL G 0 100k
VDD F 0 10
.model nbjt NPN is=3.3e-15 bf=100 rb=62.5 tf=1n cje=0.45p cjc=2p itf=1m xtf=5
+vtf=10 vaf=100
.ac dec 10 0.1 100meg
.probe
.end
(d)
(e)
g m , M 1 = 4 K n I D = 4 mA / V I D = 2mA
(f) If it is mosfet, the CB will not affect the fL because it is not in the signal path and has no
contribution to b1.
3. Write down the transfer function that has the following gain response.
is no positive zero in your transfer function.
H (s ) = 31.6
(s + 2 200) (s + 2 1k )
(s 2 400k + 1)
(s 2 30k + 1)
4. Consider the amplifier shown in Fig. 9-4. Assume the MOSFET has Kn=100A/V2,
VTHN=0.5V, Cgs=2pF, Cgd=0.5pF and no body effect.
(a) Design RREF and RB so that the small signal AC gain (AV=vo/vs) is -6.
(b) Design CL so that the fL is 50Hz.
(c) Can Miller Theorem be applied for fU estimation and what is the fU?
(d) Create the netlist for this circuit.
(e) What is your simulated AV and fL?
Use PSPICE and the following model to verify your results.
.model Nsimple_mos NMOS level=1 w=289u l=30u vto=0.5 tox=100n lambda=0.0
+cgdo=1.73n
15V
RE
RS
1k
CL
10k
CS
v1
M2
10F
vo
RL
15V
RREF
200k
RB
vs
M1
Fig. 9-4
(a)
RREF =
15 3.65
= 11.4k
992 A
(b)
b1 =
1
CL
CS
1
ReqCLCL
CL
= 2f L = 2 50 Hz
Q CS = CS ReqCS 1s negligible
2f L CL = 15.2nF
(c)
Reqi RS // RB 1k
Reqo = RE // RL = 9.5k
2 ( Cgd + Cgs )
= 15.5MHz
*hw9 question 4
vs A 0 AC 1
Rs A B 1k
Cs B C 10u
RB C G 100k
M2 E C 0 0 nsimple_mos
RE E D 10k
M1 G G 0 0 nsimple_mos
RREF D G 11.4k
CL E H 15.2n
RL H 0 200k
vdd D 0 15
.model nsimple_mos nmos level=1 w=289u l=30u vto=0.5 tox=100n lambda=0 +cgdo=1.73n
.ac dec 10 0.1 100meg
.probe
.end
(d)
Simulated Gain=15.48dB, fL=50.48Hz, fU=17.154MHz
5. Determine Ho, initial phase and final phase for the following transfer functions:
i)
3.14 10 7 s
H (s ) =
= 10
Ho=10.
(s + 2 10k )
1
s
+ 1
2 500 k
ii)
H (s ) =
1.88 10 8 (s + 2 40k )
(s + 2 300k )(s + 2 20k )
200
+ 1
2 40k
=
s
s
+ 1
+ 1
2 300k
2 20k
Ho=200
Initial phase=0, final phase=-90 deg
iii)
H (s ) =
2.37 1014 s 2
(s + 2 3M )(s + 2 100k )(s + 2 4k )(s + 2 20k )
= 20
s2
1
s
(s + 2 4k )(s + 2 20k ) s
+ 1
+ 1
2 100k
2 3M
Ho=20
Initial phase=180 deg, final phase=-180 deg
6. Consider the amplifier shown in Fig. 9-6. Assume the BJT has =100, VA=100V.
(f) Design RE so that the small signal AC gain (AV=vo/vs) is 100.
(g) Design CS, CL and CB so that the fL is 50Hz.
(h) This circuit would not function as it is. Describe what the problem is and suggest a way
to fix the problem without affecting (a) and (b).
10V
10V
RE
R1
CL
20k
RL
Q1
CB
100k
R2
20k
RS
50
CS
Ibias
500A
vs
Fig. 9-6
vo
(a)
gm =
IC
= 20m
VT
Rin
1
= 50
gm
AV =
Rin
g m (RE // RL ) = 100
Rin + RS
ro = 200k r = 5k
RE // RL = 10k R E = 11k
(b)
Q b1 =
= 2 50 C S = 31.8F
C S RS +
g
m
CL
CB
b1
100
CL = C L (RE + RL ) C L = 2.87 F
CB = C B {R1 // R2 //[r (1 + g m RS )]} C B = 64F
(c)