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    2N5911 Datasheet Rev B

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    ytnate
    This document provides specifications for the 2N5911/2N5912 dual N-channel JFETs from Calogic LLC. The JFETs feature tight tracking, low insertion loss, and good matching between the two channels. Electrical characteristics include a saturation drain current of 7-40mA, a common-source forward transconductance of 5000-10,000μS, and a differential gate current of less than 20nA. The JFETs are available in hermetic TO-99 and TO-78 packages and operate from -55°C to +150°C.

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    2N5911 Datasheet Rev B

    Uploaded by

    ytnate
    72 views2 pages
    This document provides specifications for the 2N5911/2N5912 dual N-channel JFETs from Calogic LLC. The JFETs feature tight tracking, low insertion loss, and good matching between the two channels. Electrical characteristics include a saturation drain current of 7-40mA, a common-source forward transconductance of 5000-10,000μS, and a differential gate current of less than 20nA. The JFETs are available in hermetic TO-99 and TO-78 packages and operate from -55°C to +150°C.

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    2n5911

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    This document provides specifications for the 2N5911/2N5912 dual N-channel JFETs from Calogic LLC. The JFETs feature tight tracking, low insertion loss, and good matching between the two channels. Electrical characteristics include a saturation drain current of 7-40mA, a common-source forward transconductance of 5000-10,000μS, and a differential gate current of less than 20nA. The JFETs are available in hermetic TO-99 and TO-78 packages and operate from -55°C to +150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    72 views2 pages

    2N5911 Datasheet Rev B

    Uploaded by

    ytnate
    This document provides specifications for the 2N5911/2N5912 dual N-channel JFETs from Calogic LLC. The JFETs feature tight tracking, low insertion loss, and good matching between the two channels. Electrical characteristics include a saturation drain current of 7-40mA, a common-source forward transconductance of 5000-10,000μS, and a differential gate current of less than 20nA. The JFETs are available in hermetic TO-99 and TO-78 packages and operate from -55°C to +150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Dual N-Channel JFET

    High Frequency Amplifier


    LLC

    2N5911 / 2N5912
    ABSOLUTE MAXIMUM RATINGS
    (TA = 25oC unless otherwise specified)

    FEATURES

    Tight Tracking
    Low Insertion Loss
    Good Matching

    Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V


    Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
    Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
    Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
    Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC

    PIN CONFIGURATION

    One Side
    367mW
    3.0mW/ oC

    Power Dissipation
    Derate above 25oC
    TO-99
    TO-78

    Both Sides
    500mW
    4.0mW/ oC

    NOTE: Stresses above those listed under "Absolute Maximum


    Ratings" may cause permanent damage to the device. These are
    stress ratings only and functional operation of the device at these or
    any other conditions above those indicated in the operational sections
    of the specifications is not implied. Exposure to absolute maximum
    rating conditions for extended periods may affect device reliability.

    ORDERING INFORMATION

    CJ1

    G2

    D2

    S2
    G1

    D1

    S1

    Part

    Package

    Temperature Range

    2N5911-12
    X2N5912

    Hermetic
    Hermetic TO-99
    TO-78
    Sorted Chips in Carriers

    -55oC to +150oC
    -55oC to +150oC

    ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)


    SYMBOL
    IGSS

    PARAMETER

    MIN

    Gate Reverse Current

    BVGSS

    Gate Reverse Breakdown Voltage

    -25

    VGS(off)

    Gate-Source Cutoff Voltage

    -1

    VGS

    Gate-Source Voltage

    IG

    -0.3

    MAX

    UNITS

    -100

    pA

    -250

    nA

    VGS = -15V, VDS = 0


    TA = 150 oC
    IG = -1A, VDS = 0

    -5

    -4

    VDS = 10V, ID = 1nA


    VDG = 10V, ID = 5mA

    -100

    pA

    -100

    nA

    40

    mA

    Gate Operating Current

    TEST CONDITIONS

    TA = 150 oC

    IDSS

    Saturation Drain Current (Pulsewidth 300s, duty cycle 3%)

    gfs

    Common-Source Forward Transconductance

    5000

    10,000

    f = 1kHz

    gfs

    Common-Source Forward Transconductance (Note 1)

    5000

    10,000

    f = 100MHz

    gos

    Common-Source Output Conductance

    100

    goss

    Common-Source Output Conductance (Note 1)

    150

    Ciss

    Common-Source Input Capacitance (Note 1)

    Crss

    Common-Source Reverse Transfer Capacitance (Note 1)

    1.2

    en

    Equivalent Short Circuit Input Noise Voltage (Note 1)

    NF

    Spot Noise Figure (Note 1)

    VDS = 10V, VGS = 0V

    f = 1kHz
    f = 100MHz
    VDG = 10V, ID = 5mA
    pF

    f = 1MHz

    20

    nV

    Hz

    f = 10kHz

    dB

    CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX

    f = 10kHz
    RG = 100k

    DS013 REV B

    2N5911 / 2N5912
    LLC

    ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)


    SYMBOL

    PARAMETER

    2N5911

    2N5912

    UNITS

    TEST CONDITIONS

    MIN MAX MIN MAX


    | IG1 -IG2 |

    Differential Gate Current

    IDSS1
    IDSS2

    Saturation Drain Current Ratio

    | VGS1 -VGS2 |

    Differential Gate-Source Voltage

    10

    15

    | VGS1 VGS2 |
    T

    Gate-Source Voltage
    Differential Drift (Measured at
    end points, TA and TB)

    20

    40

    gfs1
    gfs2

    Transconductance Ratio

    20
    0.95

    20
    0.95

    nA

    0.95

    0.95

    TA = 125oC

    VDS = 10V, VGS = 0


    (Pulsewidth 300A, duty cycle 3%)

    1
    mV

    V/ oC
    20

    VDG = 10V, ID = 5mA

    TA = 25oC
    TB = 125oC
    VDG = 10V, ID = 5mA

    40

    TA = -55oC
    TB = 25 oC

    f = 1kHz

    NOTE 1: For design reference only, not 100% tested.

    CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX

    DS013 REV B

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