AO4614
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4614 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4614
is Pb-free (meets ROHS & Sony 259
specifications). AO4614L is a Green
Product ordering option. AO4614 and
AO4614L are electrically identical.
n-channel
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON)
< 31m (VGS=10V)
< 45m (VGS=4.5V)
p-channel
-40V
-5A (VGS = -10V)
RDS(ON)
< 45m (VGS = -10V)
< 63m (VGS = -4.5V)
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70C
B
TA=25C
Power Dissipation
20
20
-5
ID
-4
IDM
20
-20
1.28
1.28
-55 to 150
-55 to 150
TA=25C
Continuous Drain
Current A
TA=70C
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
Max p-channel
-40
Symbol
RJA
RJL
RJA
RJL
Device
n-ch
n-ch
n-ch
Typ
48
74
35
p-ch
p-ch
p-ch
48
74
35
Units
V
V
A
W
C
Max Units
62.5 C/W
110 C/W
50 C/W
62.5
110
50
C/W
C/W
C/W
AO4614
N Channel Electrical Characteristics (T J=25C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, V GS=0V
1
TJ=55C
Gate-Body leakage current
VDS=0V, VGS= 20V
Gate Threshold Voltage
VDS=VGS ID=250A
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, I D=6A
TJ=125C
Static Drain-Source On-Resistance
VGS=4.5V, I D=5A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Units
V
VDS=32V, VGS=0V
VGS(th)
IS
Max
40
IGSS
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, I D=6A
100
nA
2.3
23.2
31
36
48
32.6
45
22
0.77
m
m
S
404
pF
95
pF
37
pF
2.7
8.3
nC
4.2
nC
1.3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.3
nC
tD(on)
Turn-On DelayTime
4.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=3.3,
RGEN=3
3.3
ns
15.6
ns
ns
20.5
14.5
ns
nC
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/s
Qrr
Body Diode Reverse Recovery Charge
IF=6A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V
20
5V
25
VDS=5V
4.5V
15
4V
ID(A)
ID (A)
20
15
125C
10
10
VGS=3.5V
5
0
0
25C
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
50
1.8
Normalized On-Resistance
RDS(ON) (m)
40
VGS=4.5V
30
VGS=10V
VGS=10V
ID=6A
1.6
VGS=4.5V
ID=5A
1.4
1.2
1
20
0
10
15
20
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
100
125
150
175
1.0E+01
80
ID=6A
70
1.0E+00
60
125C
1.0E-01
50
IS (A)
RDS(ON) (m)
75
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
125C
40
1.0E-02
25C
1.0E-03
30
20
1.0E-04
25C
10
2
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-05
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
800
VDS=20V
ID= 6A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
Crss
200
0
0
10
10
100.0
40
10s
10.0
100s
10ms
1ms
1s
10s
TJ(Max)=150C
TA=25C
0.1s
0
0.001
10
100
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZJA Normalized Transient
Thermal Resistance
20
10
VDS (Volts)
10
TJ(Max)=150C
TA=25C
DC
0.1
0.1
40
30
Power (W)
ID (Amps)
RDS(ON)
limited
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1.0
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4614
P-Channel Electrical Characteristics (T J=25C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-10mA, V GS=0V
-40
-1
-5
Gate-Body leakage current
VDS=0V, VGS=20V
Gate Threshold Voltage
VDS=VGS ID=-250A
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
100
nA
-3
34.7
45
52
65
VGS=-4.5V, I D=-2A
50.6
63
VDS=-5V, ID=-4.8A
12
TJ=125C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
-1.9
VGS=-10V, I D=-5A
Coss
Units
V
TJ=55C
IGSS
IS
Max
VDS=-32V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, I D=-5A
A
m
m
S
-0.75
-1
-3.2
657
pF
143
pF
63
pF
6.5
13.6
nC
6.8
nC
1.8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.9
nC
tD(on)
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=-10V, VDS=-20V, RL=4,
RGEN=3
6.7
ns
26
ns
11.2
ns
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/s
22.3
Body Diode Reverse Recovery Charge
IF=-5A, dI/dt=100A/s
15.2
ns
nC
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any agiven
givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thett10s
10sthermal
thermalresistance
resistancerating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
30
-5V
-10V
25
VDS=-5V
-4.5V
-6V
20
-4V
15
15
-ID(A)
-ID (A)
20
-3.5V
10
10
VGS=-3V
25C
0
0
125C
1.5
-VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4.5
Normalized On-Resistance
1.8
55
RDS(ON) (m)
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
60
VGS=-4.5V
50
45
40
VGS=-10V
35
30
VGS=-10V
ID=-5A
1.6
1.4
VGS=-4.5V
ID=-4A
1.2
1
0.8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
160
140
1.0E+00
ID=-5
120
125C
1.0E-01
125C
100
-IS (A)
RDS(ON) (m)
80
60
1.0E-02
1.0E-03
1.0E-04
40
25C
20
2
25C
1.0E-05
5
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
1.0
AO4614
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1000
VDS=-20V
ID=-5A
800
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
600
400
Coss
0
0
10
15
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100s
1ms
0.1s
10s
30
40
10ms
1s
TJ(Max)=150C
TA=25C
30
Power (W)
-ID (Amps)
RDS(ON)
limited
20
10
10s
DC
0.1
0.1
20
40
TJ(Max)=150C, TA=25C
1.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
Crss
200
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
