Order this document
by MGP20N40CL/D
SEMICONDUCTOR TECHNICAL DATA
20 AMPERES
VOLTAGE CLAMPED
NCHANNEL IGBT
Vce(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features GateEmitter ESD protection, GateCollector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
Temperature Compensated GateDrain Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability
G
G
C
Rge
CASE 221A06, Style 9
TO220AB
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
CLAMPED
Vdc
CollectorGate Voltage
VCGR
CLAMPED
Vdc
VGE
CLAMPED
Vdc
IC
20
Adc
ICR
12
Apk
PD
150
Watts
ESD
3.5
kV
TJ, Tstg
55 to 175
RqJC
RqJA
1.0
62.5
C/W
TL
275
GateEmitter Voltage
Collector Current Continuous @ TC = 25C
Reversed Collector Current pulse width
t 100 ms
Total Power Dissipation @ TC = 25C (TO220)
Electrostatic Voltage GateEmitter
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case (TO220)
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds
10 lbfin (1.13 Nm)
Mounting Torque, 632 or M3 screw
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse CollectorEmitter Avalanche Energy
@ Starting TJ = 25C
@ Starting TJ = 150C
EAS
mJ
550
150
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 1
TMOS
Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
MGP20N40CL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
370
405
430
500
100
Unit
OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(IClamp = 10 mA, TJ = 40 to 150C)
BVCES
Zero Gate Voltage Collector Current
(VCE = 350 V, VGE = 0 V, TJ = 150C)
(VCE = 15 V, VGE = 0 V, TJ = 150C)
ICES
Resistance GateEmitter (TJ = 40 to 150C)
RGE
10k
16k
30k
GateEmitter Breakdown Voltage (IG = 2 mA)
BVGES
11
13
15
"V
ICES
50
mA
BVCER
26
40
120
1.0
0.75
1.7
2.2
1.8
1.1
1.4
1.4
1.4
1.9
1.8
gfs
10
18
pF
CollectorEmitter Reverse Leakage (VCE = 15 V, TJ = 150C)
CollectorEmitter Reversed Breakdown Voltage (IE = 75 mA)
Vdc
mA
W
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150C)
VGE(th)
CollectorEmitter OnVoltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150C)
VCE(on)
Forward Transconductance (VCE
u 5.0 V, IC = 10 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
Ciss
2800
Coss
200
Crss
25
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
GateEmitter Charge
Qg
45
80
Qgs
8.0
Qgd
20
( CC = 320 V,, IC = 20 A,,
(V
L = 200 mH, RG = 1 KW)
td(off)
14
tf
4.0
((VCC = 14 V,, IC = 20 A,,
L = 200 mH, RG = 1 KW)
td(on)
2.0
tr
6.0
(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)
GateCollector Charge
TurnOff Delay Time
Fall Time
TurnOn Delay Time
Rise Time
nC
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N40CL
TYPICAL ELECTRICAL CHARACTERISTICS
40
VGE = 10 V
I C , COLLECTOR CURRENT (AMPS)
TJ = 25C
30
4V
20
10
3V
0
I C , COLLECTOR CURRENT (AMPS)
20
3V
10
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25C
Figure 2. Output Characteristics, TJ = 125C
VCE = 10 V
30
20
TJ = 125C
25C
10
4V
40
TJ = 125C
5V
30
10
VCE , COLLECTORTOEMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (AMPS)
40
5V
VGE = 10 V
10
2.2
VGE = 5 V
2.0
IC = 20 A
1.8
15 A
1.6
10 A
1.4
1.2
1.0
50
50
100
VGE, GATETOEMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Transfer Characteristics
Figure 4. CollectortoEmitter Saturation
Voltage versus Junction Temperature
150
10000
TJ = 25C
C, CAPACITANCE (pF)
VGE = 0 V
Ciss
1000
Coss
100
Crss
10
1.0
25
50
75
100
125
150
175
200
COLLECTORTOEMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Motorola TMOS Power MOSFET Transistor Device Data
Qg
6
Qgs
Qgd
20
10
30
20
20
TF
10
1000
2000
10
3000
4000
Figure 7. Total Switching Losses
versus Gate Temperature
30
Td(off)
20
3
VDD = 320 V
VGE = 5 V
TJ = 25C
IC = 20 A
TF
10
1000
2000
3000
4000
2
1
0
5000
26
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
IC = 20 A
24
22
Td(off)
20
Eoff
18
16
14
TF
12
25
50
75
100
RG, GATE RESISTANCE (OHMS)
TC, CASE TEMPERATURE (C)
Figure 8. Total Switching Losses
versus Gate Resistance
Figure 9. Total Switching Losses
versus Case Temperature
Eoff
15
Td(off)
10
15
10
SWITCHING TIME ( m S)
20
4
125
20
25
VCC = 320 V
VGE = 5 V
RG = 1000 W
L = 200 mH
TJ = 125C
0
5000
SWITCHING TIME ( m S)
SWITCHING TIME ( m S)
TOTAL SWITCHING ENERGY LOSSES (mJ)
30
40
30
Figure 6. GatetoEmitter and
CollectortoEmitter Voltage vs Total Charge
Eoff
20
Td(off)
RG, GATE RESISTANCE (OHMS)
25
TOTAL SWITCHING ENERGY LOSSES (mJ)
40
40
50
Eoff
Qg, TOTAL GATE CHARGE (nC)
40
60
VDD = 320 V
VGE = 5 V
TJ = 125C
IC = 20 A
50
TOTAL SWITCHING ENERGY LOSSES (mJ)
60
LATCH CURRENT (AMPS)
TJ = 25C
IC = 20 A
50
3 mH
16
12
10 mH
8.0
4.0
TF
5
TOTAL SWITCHING ENERGY LOSSES (mJ)
SWITCHING TIME ( mS)
VGE, GATETOEMITTER VOLTAGE (VOLTS)
MGP20N40CL
10
15
5
20
25
50
75
100
125
IC, COLLECTORTOEMITTER CURRENT (AMPS)
TEMPERATURE (C)
Figure 10. Total Switching Losses
versus Collector Current
Figure 11. Latch Current versus Temperature
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N40CL
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E 05
1.0E 04
1.0E 03
1.0E 02
RJC(t) = r(t) RJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)
1.0E 01
1.0E+00
1.0E+01
t, TIME (s)
Figure 12. Thermal Response
PACKAGE DIMENSIONS
T
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
F
T
Q
1 2 3
STYLE 9:
PIN 1.
2.
3.
4.
H
K
Z
L
G
D
N
GATE
COLLECTOR
EMITTER
COLLECTOR
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
2.04
CASE 221A06
(TO220AB)
ISSUE Y
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N40CL
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals
must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 3036752140 or 18004412447
JAPAN: Nippon Motorola Ltd.; TatsumiSPDJLDC, 6F SeibuButsuryuCenter,
3142 Tatsumi KotoKu, Tokyo 135, Japan. 81335218315
INTERNET: http://DesignNET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
MGP20N40CL/D
Motorola TMOS Power MOSFET Transistor
Device Data
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
