ZO4 o 9 MF

Z04xxxF
SENSITIVE GATE TRIACS

FEATURES
IT(RMS) = 4A
VDRM = 400V to 800V
IGT 3mA to 25mA
A1
A2
DESCRIPTION
The Z04xxxF series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where high gate sensitivity or high
switching performances are required (like touch
dimmers, fan, electrovalue control,...).
TO202-3
(Plastic)
ABSOLUTE RATINGS (limiting values)

Symbol
IT(RMS)
ITSM
I2 t
dI/dt
Tstg
Tj
Tl
Parameter
Value
Unit
Tc= 75 C
Ta= 25 C
0.95
tp = 8.3 ms
22
tp = 10 ms
20
I2t Value for fusing
tp = 10 ms
A2s
Critical rate of rise of on-state current

IG = 50 mA
diG /dt = 0.1 A/s.
Repetitive
F = 50 Hz
10
A/s
Non
Repetitive
50
RMS on-state current

(360 conductionangle)
Non repetitive surge peak on-state current
(Tj initial = 25C )
Storage and operating junction temperature range

Maximum lead temperature for soldering during 10s at
4.5mm from case
Symbol
VDRM
VRRM
August 1998 Ed : 1A
- 40, + 150
- 40, + 125
260
Voltage
Parameter
Repetitive peak off-state voltage
Tj = 125C
Unit
400
600
800
1/4
Z04xxxF
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
100
C/W
Rth(j-c)
Junction to case for D.C
10
C/W
Rth(j-c)
Junction to case for A.C 360conduction angle (F=50Hz)
7.5
C/W
GATE CHARACTERISTICS
PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 s)
VGD = 0.2Vmin. (VD=VDRM RL=3.3k Tj= 125C)
IGM = 1.2 A max. (tp = 20 s)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Sensitivity
Quadrant
IGT
VD=12V (DC) RL=33
Tj= 25C
I-II-III-IV
MAX
VGT
VD=12V (DC) RL=33
Tj= 25C
I-II-III-IV
MAX
IH *
IT= 50 mA Gate open
Tj= 25C
IG= 1.2 IGT
Tj= 25C
IL
05
09
10
10
25
1.5
mA
V
MAX
10
25
mA
I-III-IV
MAX
10
15
25
mA
II
MAX
12
15
25
50
VTM *
ITM= 5.5A tp= 380s
Tj= 25C
MAX
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25C
MAX
Tj= 110C
MAX
200
VD=67%VDRM
Gate open
Tj= 110C
MIN
10
20
100
(dI/dt)c = 1.3 A/ms
Tj= 110C
MIN
0.5
(dI/dt)c = 1.8 A/ms
Tj= 110C
MIN
dV/dt *
(dV/dt)c *
ORDERING INFORMATION
04
05
F
PACKAGE :
F=TO202-3
TRIAC TOP GLASS

CURRENT
SENSITIVITY
200
VOLTAGE
V/s
V/s
* For either polarity of electrode A2 voltage with reference to electrodeA 1
2/4
Unit
02
V/s
Z04xxxF
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperature
(Tamb and Tcase).
Tcase (oC)
P (W)
P(W)
7
180
= 120
o
= 90
o
-85
-95
= 60
-105
0
0
Rth(j-c)
= 30
-75
= 180
T(RMS)
-115
Rth(j-a)
(A)
Fig.3 : RMS on-state current versus case temperature.
Tamb ( C)
0
0
20
40
60
80
100
120
-125
140
Fig.4 : Relative variation of thermal impedance

junction to ambient versus pulse duration.
I T(RMS) (A)
Zth(j-a)/Rth(j-a)
1.00
0.8
0.6
o
= 180
0.10
0.4
0.2
Tamb(oC)
0
0
tp( s)
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.5 : Relativevariation of gate trigger current and

holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
o
Ih[Tj=25 C]
1E-2
1E-1
1 E +0
1 E +1
1E +2 5 E +2
Fig.6 : Non repetitive surge peak on-state current

versus number of cycles.
ITSM(A)
20
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.01
1E-3
Tj initial = 25 C
15
Igt
10
Ih
5
Number of cycles
Tj(oC)
-40
-20
20
40
60
80
100
120 140
0
1
10
100
1000
3/4
Z04xxxF
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-statecharacteristics(maximum values).
I TM (A)
100
100
Tj initial = 25oC
Tj initial
o
25 C
10
I TSM
10
Tj max
Tj max
Vto =0.98 V
Rt =0.180
1
It
2
VTM (V)
tp (ms)
1
1
10
0.1
0
0.5
1.5
2.5
3.5
4.5
PACKAGE MECHANICAL DATA

TO202-3 (Plastic)
DIMENSIONS
REF.
A
C
O
F
H
N1
N
Millimeters
Typ.
Max.
Inches
Typ.
Max.
10.1
0.398
A
C
7.3
0.287
10.5
0.413
E
F
7.4
0.290
0.51
0.020
J
M
1.5
4.5
0.059
0.177
N
N1
2.54
O
P
1.5
0.059
5.3
0.209
0.100
1.4
0.7
0.055
0.028
Marking : type number

Weight : 1 g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of
use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics

1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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Z04xxxF

SENSITIVE GATE TRIACS

ABSOLUTE RATINGS (limiting values)

I2t Value for fusing

Critical rate of rise of on-state current

RMS on-state current

Storage and operating junction temperature range

Junction to case for D.C

Junction to case for A.C 360conduction angle (F=50Hz)

IGM = 1.2 A max. (tp = 20 s)

VD=12V (DC) RL=33

VD=12V (DC) RL=33

IT= 50 mA Gate open

IG= 1.2 IGT

ITM= 5.5A tp= 380s

(dI/dt)c = 1.3 A/ms

(dI/dt)c = 1.8 A/ms

TRIAC TOP GLASS

* For either polarity of electrode A2 voltage with reference to electrodeA 1

Fig.2 : Correlation between maximum RMS power

Fig.3 : RMS on-state current versus case temperature.

Fig.4 : Relative variation of thermal impedance

10 20 30 40 50 60 70 80 90 100 110 120 130

Fig.5 : Relativevariation of gate trigger current and

Fig.6 : Non repetitive surge peak on-state current

Fig.8 : On-statecharacteristics(maximum values).

PACKAGE MECHANICAL DATA

Marking : type number

The ST logo is a registered trademark of STMicroelectronics

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