SPP17N80C3

SPA17N80C3
Cool MOS Power Transistor
Feature
New revolutionary high voltage technology

VDS

800

RDS(on)

0.29

ID

17

Worldwide best RDS(on) in TO 220

Ultra low gate charge

PG-TO220-3-31 PG-TO220

Periodic avalanche rated

Extreme dv/dt rated

Ultra low effective capacitances

P-TO220-3-31

Improved transconductance
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP17N80C3

PG-TO220

Q67040-S4353

17N80C3

SPA17N80C3

PG-TO220-3-31 SP000216353

17N80C3

Maximum Ratings
Parameter

Symbol

Value
SPP

Continuous drain current

Unit
SPA

ID

TC = 25 C

17

17 1)

TC = 100 C

11

11 1)

51

51

Pulsed drain current, tp limited by Tjmax

ID puls

Avalanche energy, single pulse

EAS

670

670

EAR

0.5

0.5

Avalanche current, repetitive tAR limited by Tjmax

IAR

17

17

Gate source voltage

VGS

20

20

Gate source voltage AC (f >1Hz)

VGS

30

30

Power dissipation, TC = 25C

Ptot

208

42

Operating and storage temperature

Tj , Tstg

mJ

ID=3.4A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=17A, VDD=50V

Rev. 2.6

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SPP17N80C3
SPA17N80C3
Maximum Ratings
Parameter

Symbol

Drain Source voltage slope

dv/dt

Value

Unit

50

V/ns

Values

Unit

VDS = 640 V, ID = 17 A, Tj = 125 C

Thermal Characteristics
Symbol

Parameter

min.

typ.

max.

Thermal resistance, junction - case

RthJC

0.6

Thermal resistance, junction - case, FullPAK

RthJC_FP

3.6

Thermal resistance, junction - ambient, leaded

RthJA

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

80

SMD version, device on PCB:

RthJA

@ min. footprint

62

@ 6 cm 2 cooling area 3)

35

260

Soldering temperature, wavesoldering

Tsold

K/W

1.6 mm (0.063 in.) from case for 10s 4)

Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter

Symbol

Conditions

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

Drain-Source avalanche

V(BR)DS VGS=0V, ID=17A

Values

Unit

min.

typ.

max.

800

870

2.1

3.9

breakdown voltage
Gate threshold voltage

VGS(th)

ID=1000A, VGS=VDS

Zero gate voltage drain current

I DSS

VDS=800V, V GS=0V,

Gate-source leakage current

I GSS

Drain-source on-state resistance RDS(on)

Gate input resistance

Rev. 2.6

RG

Tj=25C

0.5

25

Tj=150C

250

VGS=20V, V DS=0V

100

VGS=10V, ID=11A
Tj=25C

0.25

0.29

Tj=150C

0.78

f=1MHz, open drain

0.7

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SPP17N80C3
SPA17N80C3
Electrical Characteristics
Parameter
Transconductance

Symbol
gfs

Conditions
VDS2*ID*R DS(on)max,

Values

Unit

min.

typ.

max.

15

S
pF

ID=11A

Input capacitance

Ciss

VGS=0V, VDS=25V,

2320

Output capacitance

Coss

f=1MHz

1250

Reverse transfer capacitance

Crss

60

59

124

Effective output capacitance,5) Co(er)

VGS=0V,

energy related

VDS=0V to 480V

Effective output capacitance,6) Co(tr)

time related
Turn-on delay time

td(on)

VDD=400V, VGS=0/10V,

25

Rise time

tr

ID=17A,

15

Turn-off delay time

td(off)

RG =4.7, Tj =125C

72

82

Fall time

tf

12

46

91

177

ns

Gate Charge Characteristics

Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD=640V, ID=17A

VDD=640V, ID=17A,

nC

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=640V, ID=17A

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220C, reflow
5C

o(er)

is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

6C

o(tr)

is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Rev. 2.6

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SPP17N80C3
SPA17N80C3
Electrical Characteristics
Symbol

Parameter
Inverse diode continuous

IS

Conditions

Values

Unit

min.

typ.

max.

17

51

TC=25C

forward current
Inverse diode direct current,

I SM

pulsed
Inverse diode forward voltage

VSD

VGS =0V, IF=IS

1.2

Reverse recovery time

t rr

VR =400V, IF =IS ,

550

ns

Reverse recovery charge

Q rr

diF/dt=100A/s

15

Peak reverse recovery current

I rrm

51

Peak rate of fall of reverse

dirr /dt

1200

A/s

Tj=25C

recovery current
Typical Transient Thermal Characteristics
Symbol

Value

Unit

SPP

SPA

Rth1

0.00812

0.00812

Rth2

0.016

Rth3

Symbol

Value

Unit

SPP

SPA

Cth1

0.0003562

0.0003562

0.016

Cth2

0.001337

0.001337

0.031

0.031

Cth3

0.001831

0.001831

Rth4

0.114

0.16

Cth4

0.005033

0.005033

Rth5

0.135

0.324

Cth5

0.012

0.008657

Rth6

0.059

2.522

Cth6

0.092

0.412

Tj

K/W

R th1

R th,n

T case

Ws/K

E xternal H eatsink

P tot (t)
C th1

C th2

C th,n
T am b

Rev. 2.6

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SPP17N80C3
SPA17N80C3
1 Power dissipation

2 Power dissipation FullPAK

Ptot = f (TC)

Ptot = f (TC)

240

SPP17N80C3

45

200
35

160

Ptot

Ptot

180

140

30
25

120
20

100

15

80
60

10

40
5

20
0
0

20

40

60

80

100

120

0
0

160

20

40

60

80

100

120

TC

3 Safe operating area

4 Safe operating area FullPAK

ID = f ( VDS )

ID = f (VDS)

parameter : D = 0 , TC=25C

parameter: D = 0, TC = 25C

10

C 160
TC

10 2

10 1

10 1

ID

ID

10 0

10 -1

10 -2 0
10

Rev. 2.6

10 0

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

10

10 -1

10

10

V
VDS

Page 5

10 -2 0
10

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC

10

10

10
V
VDS

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SPA17N80C3
5 Transient thermal impedance

6 Transient thermal impedance FullPAK

ZthJC = f (tp)

ZthJC = f (tp)

parameter: D = tp/T

parameter: D = tp/t

10 1

10 1

K/W

K/W
10 0

ZthJC

ZthJC

10 0

10 -1

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -2

10 -3

10 -4 -7
10

10

-6

10

-5

10

-4

10

-3

s
tp

10 -1

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -2

10 -3

10

10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10

-1

tp

7 Typ. output characteristic

8 Typ. output characteristic

ID = f (VDS); Tj =25C

ID = f (VDS); Tj =150C

parameter: tp = 10 s, VGS

parameter: tp = 10 s, VGS
35

70

20V
10V

60

20V
10V
8V
7V

55
25

45

6.5V
6V

ID

50

ID

1
s 10

8V

20

40
7V

35

5.5V

15

30
25

6V

5V

10

20
15

4.5V
5V

10

4V

5
0
0

Rev. 2.6

10

15

20

VDS

0
0

30

Page 6

10

15

20

VDS

30

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SPA17N80C3
9 Typ. drain-source on resistance

10 Drain-source on-state resistance

RDS(on)=f(ID)

RDS(on) = f (Tj)

parameter: Tj=150C, VGS

parameter : ID = 11 A, VGS = 10 V

1.5

1.6

SPP17N80C3

RDS(on)

RDS(on)

1.3
1.2
1.1

4V 4.5V 5V

5.5V

6V

6.5V

1.2

0.8

0.9

0.6

7V
8V
10V
20V

0.8
0.7

0.4

98%
typ

0.2

0.6
0.5
0

10

15

20

25

0
-60

35

-20

20

60

100

ID

Tj

11 Typ. transfer characteristics

12 Typ. gate charge

ID = f ( VGS ); VDS 2 x ID x RDS(on)max

VGS = f (Q Gate)
parameter: ID = 17 A pulsed

parameter: tp = 10 s
65

16

50

12

VGS

45

ID

SPP17N80C3

25C

55

180

40
35

150C

0,2 VDS max

10

0,8 VDS max

30
25

20
4

15
10

5
0
0

Rev. 2.6

10

12

14

16

0
0

V 20
VGS

20

40

60

80

100

120

nC

160

QGate
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SPP17N80C3
SPA17N80C3
13 Forward characteristics of body diode

14 Avalanche SOA

IF = f (VSD)

IAR = f (tAR)

parameter: Tj , tp = 10 s

par.: Tj 150 C

10 2

SPP17N80C3

18

14

IF

IAR

10 1

12
10
8

10 0

6
Tj = 25 C typ

T j(START)=25C

Tj = 150 C typ

Tj = 25 C (98%)
2

Tj = 150 C (98%)
10 -1
0

0.4

0.8

1.2

1.6

2.4 V

T j(START)=125C

0 -3
10

10

-2

10

-1

10

10

10

s 10
tAR

VSD

15 Avalanche energy

16 Drain-source breakdown voltage

EAS = f (Tj)

V(BR)DSS = f (Tj)

par.: ID = 3.4 A, VDD = 50 V

700

980

600

940

550

920

V(BR)DSS

E AS

mJ

500
450
400

900
880
860

350

840

300

820

250

800

200

780

150
100

760

50

740

0
25

50

75

100

720
-60

150

C
Tj

Rev. 2.6

SPP17N80C3

-20

20

60

100

180

Tj
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SPP17N80C3
SPA17N80C3
17 Avalanche power losses

18 Typ. capacitances

PAR = f (f )

C = f (VDS)

parameter: EAR =0.5mJ

parameter: VGS =0V, f=1 MHz

10 5

500

pF

10 4

400

PAR

Ciss

350
300

10 3

250
10 2

200

Coss

150
10 1

100

Crss

50
0 4
10

10

10

Hz
f

10 0
0

100

200

300

400

500

600

800
V
VDS

19 Typ. Coss stored energy

Eoss=f(VDS)
18

E oss

14
12
10
8
6
4
2
0
0

Rev. 2.6

100

200

300

400

500

600

800
V
VDS

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SPP17N80C3
SPA17N80C3

Definition of diodes switching characteristics

Rev. 2.6

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SPP17N80C3
SPA17N80C3
PG-TO220-3-1, PG-TO220-3-21

Rev. 2.6

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SPP17N80C3
SPA17N80C3
PG-TO220-3-31 (FullPAK)

Rev. 2.6

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SPP17N80C3
SPA17N80C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Rev. 2.6

Page 13

2007-08-30