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    Irf 7101

    Uploaded by

    petrovi482
    MOSFET datashet planar

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Irf 7101

    Uploaded by

    petrovi482
    126 views9 pages
    MOSFET datashet planar

    Original Title

    irf7101

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    MOSFET datashet planar

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    126 views9 pages

    Irf 7101

    Uploaded by

    petrovi482
    MOSFET datashet planar

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 9

    PD - 95162

    IRF7101PbF
    Adavanced Process Technology
    l Ultra Low On-Resistance
    l Dual N-Channel MOSFET
    l Surface Mount
    l Available in Tape & Reel
    l Dynamic dv/dt Rating
    l Fast Switching
    l Lead-Free
    Description

    HEXFET Power MOSFET

    S1

    D1

    G1

    D1

    S2

    D2

    G2

    D2

    VDSS = 20V
    RDS(on) = 0.10
    ID = 3.5A

    Top View

    Fourth Generation HEXFETs from International


    Rectifier utilize advanced processing techniques to
    achieve the lowest possible on-resistance per silicon
    area. This benefit, combined with the fast switching
    speed and ruggedized device design that HEXFET
    Power MOSFETs are well known for, provides the
    designer with an extremely efficient device for use in
    a wide variety of applications.
    The SO-8 has been modified through a customized
    leadframe for enhanced thermal characteristics and
    dual-die capability making it ideal in a variety of power
    applications. With these improvements, multiple
    devices can be used in an application with dramatically
    reduced board space. The package is designed for
    vapor phase, infra red, or wave soldering techniques.
    Power dissipation of greater than 0.8W is possible in
    a typical PCB mount application.

    SO-8

    Absolute Maximum Ratings


    ID @ TA = 25C
    ID @ TA = 100C
    IDM
    PD @TC = 25C
    VGS
    dv/dt
    TJ, TSTG

    Parameter

    Max.

    Continuous Drain Current, VGS @ 10V


    Continuous Drain Current, VGS @ 10V
    Pulsed Drain Current
    Power Dissipation
    Linear Derating Factor
    Gate-to-Source Voltage
    Peak Diode Recovery dv/dt
    Junction and Storage Temperature Range
    Sodering Temperature, for 10 seconds

    3.5
    2.3
    14
    2.0
    0.016
    12
    3.0
    -55 to + 150
    300(1.6mm from case)

    Units
    A
    W
    W/C
    V
    V/nS
    C

    Thermal Resistance Ratings


    Parameter

    RJA

    Maximum Junction-to-Ambient

    Min.

    Typ.

    Max

    62.5

    Units
    C/W
    10/6/04

    IRF7101PbF
    Electrical Characteristics @ TJ = 25C (unless otherwise specified)

    Gate-to-Source Forward Leakage


    Gate-to-Source Reverse Leakage
    Total Gate Charge
    Gate-to-Source Charge
    Gate-to-Drain ("Miller") Charge
    Turn-On Delay Time
    Rise Time
    Turn-Off Delay Time
    Fall Time

    Min.
    20

    1.0
    1.1

    Typ.

    0.025

    7.0
    10
    24
    30

    LD

    Internal Drain Inductance

    4.0

    LS

    Internal Source Inductance

    6.0

    Ciss
    Coss
    C rss

    Input Capacitance
    Output Capacitance
    Reverse Transfer Capacitance

    320
    250
    75

    V(BR)DSS
    V(BR)DSS/TJ

    Parameter
    Drain-to-Source Breakdown Voltage
    Breakdown Voltage Temp. Coefficient

    RDS(ON)

    Static Drain-to-Source On-Resistance

    VGS(th)
    g fs

    Gate Threshold Voltage


    Forward Transconductance

    IDSS

    Drain-to-Source Leakage Current

    IGSS
    Qg
    Q gs
    Qgd
    td(on)
    tr
    td(off)
    tf

    Max. Units
    Conditions

    V
    VGS = 0V, ID = 250A
    V/C Reference to 25C, ID = 1mA
    0.10
    VGS = 10V, ID = 1.8A

    0.15
    VGS = 4.5V, ID = 1.0A
    3.0
    V
    VDS = VGS, ID = 250A

    S
    VDS = 15V, ID = 3.5A
    2.0
    VDS = 20V, VGS = 0V
    A
    250
    VDS = 16V, V GS = 0V, TJ = 125 C
    100
    VGS = 12V
    nA
    -100
    VGS = - 12V
    15
    ID = 1.8A
    2.0
    nC VDS = 16V
    3.6
    VGS = 10V

    VDD = 10V

    ID = 1.8A
    ns

    RG = 8.2

    RD = 26
    D

    nH

    pF

    Between lead,6mm(0.25in.)
    from package and center
    of die contact
    VGS = 0V
    VDS = 15V
    = 1.0MHz

    Source-Drain Ratings and Characteristics


    IS
    I SM

    VSD
    t rr
    Q rr
    ton

    Parameter
    Continuous Source Current
    (Body Diode)
    Pulsed Source Current
    (Body Diode)
    Diode Forward Voltage
    Reverse Recovery Time
    Reverse RecoveryCharge
    Forward Turn-On Time

    Min. Typ. Max. Units

    Conditions
    D
    MOSFET symbol
    2.0
    showing the
    A
    G
    integral reverse
    14
    p-n junction diode.
    S
    1.2
    V
    TJ = 25C, IS = 1.7A, VGS = 0V
    36
    54
    ns
    TJ = 25C, IF = 1.7A
    41
    62
    nC di/dt = 100A/s
    Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

    Notes:

    Repetitive rating; pulse width limited by

    Pulse width 300s; duty cycle 2%.

    ISD 3.5A, di/dt 90A/s, VDD V(BR)DSS,

    Surface mounted on FR-4 board, t 10sec.

    max. junction temperature.

    TJ 150C

    IRF7101PbF

    C,

    IRF7101PbF

    IRF7101PbF

    Thermal Response (Z thJA )

    100

    D = 0.50
    0.20
    10

    0.10
    0.05
    0.02

    PDM

    0.01

    t1

    SINGLE PULSE
    (THERMAL RESPONSE)

    t2
    Notes:
    1. Duty factor D = t 1 / t 2
    2. Peak T J = P DM x Z thJA + TA

    0.1
    0.0001

    0.001

    10

    0.01

    0.1

    10

    t1, Rectangular Pulse Duration (sec)

    Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

    100

    IRF7101PbF

    RD

    V DS

    VDS
    90%

    VGS

    D.U.T.

    RG

    - V DD

    10%
    VGS

    10V
    Pulse Width 1 s
    Duty Factor 0.1 %

    td(on)

    Fig 11a. Switching Time Test Circuit

    tr

    t d(off)

    tf

    Fig 11b. Switching Time Waveforms

    Current Regulator
    Same Type as D.U.T.

    50K

    QG

    .2F

    12V

    10V

    .3F

    D.U.T.

    QGS

    +
    V
    - DS

    QGD

    VG

    VGS
    3mA

    IG

    ID

    Charge

    Current Sampling Resistors

    Fig 12a. Gate Charge Test Circuit

    Fig 12b. Basic Gate Charge Waveform

    IRF7101PbF
    Peak Diode Recovery dv/dt Test Circuit
    +

    D.U.T

    Circuit Layout Considerations


    Low Stray Inductance
    Ground Plane
    Low Leakage Inductance
    Current Transformer

    RG

    Driver Gate Drive


    P.W.

    dv/dt controlled by R G
    Driver same type as D.U.T.
    ISD controlled by Duty Factor "D"
    D.U.T. - Device Under Test

    Period

    D=

    VDD

    P.W.
    Period
    VGS=10V

    D.U.T. ISD Waveform


    Reverse
    Recovery
    Current

    Body Diode Forward


    Current
    di/dt
    D.U.T. VDS Waveform
    Diode Recovery
    dv/dt

    Re-Applied
    Voltage

    Body Diode

    VDD

    Forward Drop

    Inductor Curent
    Ripple 5%

    * VGS = 5V for Logic Level Devices


    Fig 13. For N-Channel HEXFETS

    ISD

    IRF7101PbF
    SO-8 Package Outline
    Dimensions are shown in milimeters (inches)
    D

    DIM

    B
    5

    H
    0.25 [.010]

    MIN

    .0532

    .0688

    1.35

    1.75

    A1 .0040

    .0098

    0.10

    0.25

    e1

    8X b
    0.25 [.010]

    MAX

    .013

    .020

    0.33

    0.51

    .0075

    .0098

    0.19

    0.25

    .189

    .1968

    4.80

    5.00

    .1497

    .1574

    3.80

    4.00

    .050 BASIC

    1.27 BASIC

    e1

    6X

    MILLIMET ERS

    MAX

    INCHES
    MIN

    .025 BASIC

    0.635 BAS IC

    .2284

    .2440

    5.80

    6.20

    .0099

    .0196

    0.25

    0.50

    .016

    .050

    0.40

    1.27

    K x 45
    C

    y
    0.10 [.004]

    A1

    8X L

    8X c

    C A B

    FOOT PRINT

    NOT ES :
    1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.

    8X 0.72 [.028]

    2. CONT ROLLING DIMENS ION: MILLIMETER


    3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
    4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
    5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
    MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
    6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
    MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].

    6.46 [.255]

    7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O


    A S UBS T RAT E.
    3X 1.27 [.050]

    8X 1.78 [.070]

    SO-8 Part Marking Information (Lead-Free)


    EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

    INT ERNAT IONAL


    RECT IFIER
    LOGO

    XXXX
    F 7101

    DAT E CODE (YWW)


    P = DES IGNAT ES LEAD-FREE
    PRODUCT (OPTIONAL)
    Y = LAST DIGIT OF T HE YEAR
    WW = WEEK
    A = AS SEMBLY S IT E CODE
    LOT CODE
    PART NUMBER

    IRF7101PbF
    SO-8 Tape and Reel
    Dimensions are shown in milimeters (inches)
    TERMINAL NUMBER 1

    12.3 ( .484 )
    11.7 ( .461 )

    8.1 ( .318 )
    7.9 ( .312 )

    FEED DIRECTION

    NOTES:
    1. CONTROLLING DIMENSION : MILLIMETER.
    2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
    3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

    330.00
    (12.992)
    MAX.

    14.40 ( .566 )
    12.40 ( .488 )
    NOTES :
    1. CONTROLLING DIMENSION : MILLIMETER.
    2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

    Data and specifications subject to change without notice.


    This product has been designed and qualified for the Consumer market.
    Qualifications Standards can be found on IRs Web site.

    IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
    TAC Fax: (310) 252-7903
    Visit us at www.irf.com for sales contact information.10/04

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