Quantum Hall Effect Today: V. J. Goldman
Quantum Hall Effect Today: V. J. Goldman
Quantum Hall Effect Today: V. J. Goldman
Abstract
I present a brief survey of important recent developments in the quantum Hall effect. The review covers both
fractional and integer regimes, from an experimentalists perspective. The topics include direct measurements of
fractional charge, composite fermion Fermi surface, spin textures, and edge state (chiral Luttinger liquid) dynamics.
Key words: quantum Hall effect; integer; fractional
E-mail: [email protected]
=1
= 1/3
T = 14 mK
electrons
0
quasiparticles
-2.0
0.0
Global Gate Voltage (V)
2.0
Fig. 1. The quantum antidot electrometer. Tunneling conductance peaks occur each time the occupation of the antidot changes by one particle: an electron for the IQH and a
quasiparticle for the FQH regime. The charge of the particle is proportional to the global gate voltage; it takes same
voltage to attract three quasiparticles as one electron.[16]
Fig. 2. Relative change of propagation velocity vs. CF effective magnetic field for 8.5 GHz SAW. The dashed line
is a model fit including inhomogeneous broadening.[20]
25 mK
+V
3.0
=1/2
2.0
-V
Vbias
9.2
9.0
1.0
Current
Amp
35 mK
n+GaAs
2DEG AlGaAs
0.0
-0.1
0.0
0.1
0.2
cause edge confining potential prevents localization of electron states by disorder, and applied
current is carried in a sample by the delocalized
1D edge states.[6,3] Dissipationless conduction by
edge states has been established in experimental
observation of dramatic nonlocal resistance in
macroscopic QH samples.[24,25] The direction of
circulation of edge excitations is determined by
the applied magnetic field, and the theoretical picture of QH edge is based on chiral Luttinger liquid (LL) models.[26,3] LL theories make several dramatic predictions for edges of the FQHE
at = f . For example, for f = 13 the width of
2
a resonant tunneling peak should scale as T 3
in the low voltage Ohmic regime eV < 2kB T , in
contrast to the familiar Fermi liquid T 1 scaling.
The range of applicability of the LL behavior is
not well known however; a T 1 dependence was
reported in experiments on e/3 quasiparticle resonant tunneling.[27]
Another dramatic prediction of LL theories is
that for electron tunneling into a FQHE at = f ,
at high bias eV > 2kB T the tunneling current
is non-Ohmic, with a power law dependence I
i
the exponent is predicted to
V . For f = 2pi1
be = 2p + 1 for plus, and = 2p + 1 2i for
minus in the denominator, shown in Fig. 4. The
experiment was performed on a cleaved edge 2D
heterostructure overgrown by a metallic n+ GaAs
on top of an AlGaAs barrier.[28] I V measurements found power law tunneling, however with
a continuously increasing function of 1/. This behavior is not understood at present, in particular,
why varies on a QH plateau and what plays role
of edge states in gapless regions, as near = 21 .
6. Spin textures. In the picture of independent
spins, each Landau level is split into spin up and
spin down levels, so that electrons are fully spin polarized for < 1, completely unpolarized at even
filling and partially polarized otherwise. Electronelectron interaction, however, is spin-dependent,
which leads to spin-dependent correlations of the
many electron states. This effect is particularly
strong in GaAs, where the band g-factor is small,
0.44. The resulting spin depolarization depends self
consistently on , which affects the Coulomb correlations, as was studied in recent photoluminescence experiments.[29] Since spin Zeeman energy
responds to total magnetic field, while the filling
of 2D electrons is determined only by the normal
component of B, certain QH states undergo phase
transitions from un- or partially-spin polarized to
fully polarized in tilted B.[30]
Evidence for even more exotic topological spin
textures [3] has been reported in recent experiments. In double electron layer samples interlayer spin-dependent correlations can be nearly
as strong as intra layer correlations, even when
tunneling between layers is small. A remarkable
softening of long wavelength intersubband spin
excitations, Fig. 5, was observed at = 2.[31]
This occurs when each layer has only one spinsplit Landau level occupied. Probed by resonant
inelastic light scattering, these spin density wave
excitations soften to as much as 0.1 of the B = 0
values. Even though further studies are required,
these observations indicate magnetoroton instability precursor to a phase transition to an ordered
spin phase, such as quantum antiferromagnets,
long predicted for coupled QHE systems.
In single electron layers at 1 electrons
are fully spin polarized for large g-factors or in
the limit B . For small g-factors topolog-
Fig. 5. The width and the energy of the spin-density excitation (SDE) in a double layer sample. SDE is a linear
combination of Sz = 0 transitions, dashed lines; the spin
flip excitations are |Sz | = 1. Ez is the Zeeman splitting,
and SAS is the symmetric-antisymmetric gap.[31]
10
K (kHz)
15
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
References
[3] For reviews see: The Quantum Hall Effect, 2nd Ed.
(Edited by R. E. Prange and S. M. Girvin) Springer,
NY (1990); Perspectives in Quantum Hall Effects,
(Edited by S. Das Sarma and A. Pinczuk) Wiley, NY
(1997); The Quantum Hall Effects, T. Chakraborty
and P. Pietilainen, Springer series in Solid State
Sciences 85 (1995); S. M. Girvin, The Quantum Hall
Effect, Les Houches Lecture Notes (1998).
[4] http://www.nobel.se/prize/index.html