Section 6142
Section 6142
Section 6142
CGD2 V
DD
ML2
CGD4 V
DD
CDB4
ML4
CDB2
CSB2
CGD1
CSB4
CGD3
CDB1
vI
vO
CW
MS1
MS3
CGS3
CGS1
CDB3
(a)
VDD
VDD
ML2
vI
ML4
vO
MS1
MS3
CO
(b)
Figure 6.42 (a) Capacitances associated with an inverter pair. (b) Lumped-load capacitance model
for inverters.
(6.49)
422
Chapter 6
VDD = 5 V
VDD = 5 V
R
vO (0+) = 0.25 V
vO
vI
MS
Off
vI
vO
+5 V
0.25 V
+5 V
0.25 V
0V
VOL
(a)
(b)
t1
RC
t2
RC
yields
t1 = RC ln 0.9
(6.50)
yields
t2 = RC ln 0.1
(6.51)
and
tr = t2 t1 = RC ln 9 = 2.2RC
(6.52)
(6.53)
DESIGN
NOTE
The rise and fall times and propagation delays for an RC network are given by
tr = t f = 2.2RC
t P L H = t P H L = 0.69RC
423
Exercise: Find the tr and PL H for the resistively loaded inverter with C = 0.2 pF and
R = 95 k.
Exercise: Derive expressions for the fall time and high-to-low propagation delay for an
RC network.
Calculation of P H L and t f
Now consider the other switching situation, with v I = VL = 0.25 V and v O = VH = 5 V, as
displayed in Fig. 6.44. At t = 0, the input abruptly changes from v I = 0.25 V to v I = 5 V. At
t = 0+ , M S has vG S = 5 V and v DS = 5 V, so it conducts heavily and discharges the capacitance
until the value of v O reaches VL .
VDD = 5 V
R
iR
iC
vO (0 +) = 5 V
vO
iD
vI
MS
vI = 5 V
C
vI
vO
+5 V
MS
+5 V
0.25 V
t
0V
(a)
(b)
(c)
t
0
0
(d)
Chapter 6
500 A
VGS = 5 V
400 A
Current
424
iD
300 A
200 A
iC = iD iR
100 A
iR
0A
0V
1.0 V
2.0 V
3.0 V
vO
4.0 V
5.0 V
6.0 V
vO
VH
0.1 V
V90%
V50%
V = VH VL
V10%
0.1 V
VL
0
t1
t2
t3
t4
Figure 6.46 Times needed for calculation of P H L and t f for the inverter. Fall time t f = t4 t1 ;
propagation delay P H L = t3 .
425
the output has dropped by 90% of V . Thus, t f = t4 t1 . At t3 , the output is at the 50%
point, given by V50% = (VH + VL )/2, so P H L = t3 . Time t2 is also very important. At this
point v O = VD D VT N S , and this is the time at which the transistor changes from saturation
region operation to triode region operation. Thus, the differential equation that models the circuit
behavior changes at this point. This regional approach is used so often that it is referred to as
piecewise analysis.
Piecewise Analysis of P H L
Let us first focus on calculation of P H L and then calculate t f . At t = 0+ , the NMOS transistor
in Fig. 6.44(b) is operating in the saturation region, and the capacitor current is described by
KS
dvC
(vG S VT N S )2 = C
2
dt
with vC (0+ ) = VH
(6.54)
in which vG S = VH and VT N S are both constant. Thus, the drain current is constant, and the
capacitor discharges at a constant rate until the MOSFET enters the linear region of operation at
time t2 , when vC = vG S VT N S . The MOSFET enters the linear region after the capacitor voltage
drops by one threshold voltage. For these values, the time t2 required for the transistor to reach
the linear region is
t2 =
2C VT N S
VT N S
= 2RonS C
2
K S (VH VT N S )
(VH VT N S )
(6.55)
for
RonS =
1
K S (VH VT N S )
which represents the equivalent on-resistance of the NMOS switching transistor, with vG S = VD D
and v DS = 0.
Once the transistor enters the triode region, the equation characterizing the discharge changes
to
vC
dvC
K S vG S VT N S
vC = C
(6.56)
2
dt
because the v DS = vC for the MOSFET. Rearranging this equation with vG S = VH and integrating
yields
V3
V2
dvC
=
(2(VH VT N S ) vC )vC
t3
t2
KS
dt
2C
(6.57)
and
V3 = vC (t3 ) = 0.5(VH + VL )
dx
1
= ln
(a x)x
a
x a
x
(6.58)
426
Chapter 6
(6.59)
(6.60)
2VT N S
VH VT N S
1 +
= t3 = (t3 t2 ) + t2 = RonS C ln 4
V H + VL
VH VT N S
(6.61)
This is an extremely useful equation. Not only does it describe the behavior of the NMOS circuit,
but we will also see later that Eq. (6.61) characterizes the delay behavior of CMOS logic gates,
which form todays most widely used logic family.
Piecewise Analysis of t f
Fall time t f can be written as:
t f = t4 t1 = (t4 t2 ) (t2 t1 )
During the time interval t1 t2 , the MOSFET is saturated, and the current discharging the capacitor
is constant. Therefore, using
t = C
t2 t1 = C
V
I
(VH 0.1 V ) (VH VT N S )
VT N S 0.1V
= 2RonS C
Ks
VH VT N S
(VH VT N S )2
2
(6.62)
During the interval t2 to t4 , the MOSFET is operating in the triode region, and the circuit is
described by
V4
V2
dvC
=
(2(VH VT N S ) vC )vC
t2
t4
KS
dt
2C
(6.63)
based on Eqs. (6.56) and (6.57) in which the limits of integration are now defined by
V2 = vC (t2 ) = VH VT N S
and
V4 = vC (t3 ) = VH 0.9 V
(6.64)
VH 2VT N S + 0.9 V
VH 0.9 V
(6.65)
(6.66)