Data Sheet Tic 253 N

TIC253 SERIES
SILICON TRIACS
Copyright 1997, Power Innovations Limited, UK
High Current Triacs
20 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
150 A Peak Current
Max IGT of 50 mA (Quadrants 1 - 3)
DECEMBER 1971 - REVISED MARCH 1997
SOT-93 PACKAGE
(TOP VIEW)
MT1
MT2
3
Pin 2 is in electrical contact with the mounting base.
MDC2AD
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
TIC253D
TIC253M
Repetitive peak off-state voltage (see Note 1)
TIC253S
UNIT
400
600
VDRM
700
TIC253N
800
IT(RMS)
20
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
150
Peak gate current
IGM
Operating case temperature range
TC
-40 to +110
Storage temperature range
Tstg
-40 to +125
TL
230
Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2)
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at
the rate of 500 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25C case temperature (unless otherwise noted)

PARAMETER
IDRM
IGTM
VGTM
VTM
IH
MIN
TEST CONDITIONS
Repetitive peak
VD = Rated VDRM
off-state current
IG = 0
TYP
TC = 110C
MAX
UNIT
mA
Vsupply = +12 V
RL = 10
tp(g) > 20 s
50
Peak gate trigger
Vsupply = +12 V
RL = 10
tp(g) > 20 s
-15
-50
current
Vsupply = -12 V
RL = 10
tp(g) > 20 s
-16
-50
Vsupply = -12 V
RL = 10
tp(g) > 20 s
28
Vsupply = +12 V
RL = 10
tp(g) > 20 s
0.7
Peak gate trigger
Vsupply = +12 V
RL = 10
tp(g) > 20 s
-0.7
-2
voltage
Vsupply = -12 V
RL = 10
tp(g) > 20 s
-0.8
-2
Vsupply = -12 V
RL = 10
tp(g) > 20 s
0.8
ITM = 28.2 A
IG = 50 mA
(see Note 4)
1.4
1.7
Vsupply = +12 V
IG = 0
Init ITM = 100 mA
40
Vsupply = -12 V
IG = 0
Init ITM = -100 mA
-13
-40
Peak on-state voltage

Holding current
mA
V
mA
All voltages are with respect to Main Terminal 1.

NOTE 4: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TIC253 SERIES
SILICON TRIACS
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)

PARAMETER
IL
Vsupply = +12 V
Latching current
off-state voltage
dv/dt(c)
di/dt
TYP
VD = Rated VD
MAX
UNIT
20
(see Note 5)
Vsupply = -12 V
Critical rate of rise of
dv/dt
MIN
TEST CONDITIONS
mA
-20
IG = 0
TC = 110C
Critical rise of
VD = Rated VD
TC = 80C
commutation voltage
di/dt = 0.5 IT(RMS)/ms
IT = 1.4 IT(RMS)
Critical rate of rise of
VD = Rated VD
on -state current
diG/dt = 50 mA/s
IGT = 50 mA
TC = 110C
450
V/s
V/s
200
A/s
All voltages are with respect to Main Terminal 1.

NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
RJC
Junction to case thermal resistance
RJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1.52
C/W
36
C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT

vs
IGT - Gate Trigger Current - mA
100
10
01
-60
Vsupply IGTM
+
+
+
+
-40
-20
VAA = 12 V
20
40
60
ALL QUADRANTS
001
VAA = 12 V
RL = 10
tp(g) = 20 s
tp(g) = 20 s
80
100
120
Figure 1.
TC10AB
01
RL = 10
TC - Case Temperature - C
PRODUCT
CASE TEMPERATURE
TC10AA
VGT - Gate Trigger Voltage - V
CASE TEMPERATURE
1000
GATE TRIGGER VOLTAGE

vs
INFORMATION
0001
-60
-40
-20
20
40
60
80
Figure 2.
100
120
TIC253 SERIES
SILICON TRIACS
TYPICAL CHARACTERISTICS
GATE FORWARD VOLTAGE

vs
GATE FORWARD CURRENT
HOLDING CURRENT
vs
CASE TEMPERATURE
TC10AD
10
01
-60
Vsupply
VAA = 12 V
+
-
IG = 0
Initiating ITM = 100 mA
-40
-20
20
40
60
80
100
TC10AC
10
VGF - Gate Forward Voltage - V
IH - Holding Current - mA
100
MAX
TYP
MIN
01
IA = 0
TC = 25 C
QUADRANT 1
001
0001
120
001
01
10
IGF - Gate Forward Current - A
Figure 3.
Figure 4.
LATCHING CURRENT
vs
CASE TEMPERATURE
TC10AE
IL - Latching Current - mA
1000
100
10
Vsupply IGTM
+
+
1
-60
-40
+
+
VAA = 12 V
-20
20
40
60
80
100
120
Figure 5.
PRODUCT
INFORMATION
TIC253 SERIES
SILICON TRIACS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
INFORMATION
MDXXAW
TIC253 SERIES
SILICON TRIACS
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
PRODUCT
INFORMATION

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TIC253 SERIES

High Current Triacs

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

150 A Peak Current

Max IGT of 50 mA (Quadrants 1 - 3)

DECEMBER 1971 - REVISED MARCH 1997

Repetitive peak off-state voltage (see Note 1)

Peak on-state surge current full-sine-wave (see Note 3)

Peak gate current

Operating case temperature range

Storage temperature range

Lead temperature 1.6 mm from case for 10 seconds

electrical characteristics at 25C case temperature (unless otherwise noted)

Peak gate trigger

Peak gate trigger

Init ITM = 100 mA

Init ITM = -100 mA

Peak on-state voltage

All voltages are with respect to Main Terminal 1.

Information is current as of publication date. Products conform to specifications in accordance

electrical characteristics at 25C case temperature (unless otherwise noted) (continued)

Critical rate of rise of

di/dt = 0.5 IT(RMS)/ms

Critical rate of rise of

All voltages are with respect to Main Terminal 1.

Junction to case thermal resistance

Junction to free air thermal resistance

GATE TRIGGER CURRENT

IGT - Gate Trigger Current - mA

VGT - Gate Trigger Voltage - V

GATE TRIGGER VOLTAGE

GATE FORWARD VOLTAGE

VGF - Gate Forward Voltage - V

IGF - Gate Forward Current - A

ALL LINEAR DIMENSIONS IN MILLIMETERS

Copyright 1997, Power Innovations Limited

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