LM4250

LM4250 Programmable Operational Amplifier

Literature Number: SNOSC17A

LM4250
Programmable Operational Amplifier
General Description

Features

The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external
master bias current setting resistor programs the input bias
current, input offset current, quiescent power consumption,
slew rate, input noise, and the gain-bandwidth product. The
device is a truly general purpose operational amplifier.
The LM4250C is identical to the LM4250 except that the
LM4250C has its performance guaranteed over a 0C to
+70C temperature range instead of the 55C to +125C
temperature range of the LM4250.

n
n
n
n
n
n
n
n

1V to 18V power supply operation

3 nA input offset current
Standby power consumption as low as 500 nW
No frequency compensation required
Programmable electrical characteristics
Offset voltage nulling capability
Can be powered by two flashlight batteries
Short circuit protection

Connection Diagrams
Metal Can Package

Dual-In-Line Package

DS009300-5

Top View
DS009300-2

Top View
X5 Difference Amplifier

500 Nano-Watt X10 Amplifier

DS009300-4
DS009300-3

Quiescent PD = 500 nW

Quiescent PD = 0.6 mW

2000 National Semiconductor Corporation

DS009300

www.national.com

LM4250 Programmable Operational Amplifier

August 2000

LM4250

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 3)
LM4250

LM4250C

18V

18V

Operating Temp. Range

55C TA +125C

0C TA +70C

Differential Input Voltage

30V
15V

30V
15V

Supply Voltage

Input Voltage (Note 2)

ISET Current
Output Short Circuit Duration

150 nA

150 nA

Continuous

Continuous

150C

100C

150C

100C

TJMAX
H-Package
N-Package
J-Package

100C

M-Package

100C

Power Dissipation at TA = 25C

H-Package (Still Air)
(400 LF/Min Air Flow)

500 mW

300 mW

1200 mW

1200 mW

N-Package
J-Package

500 mW
1000 mW

M-Package

600 mW
350 mW

Thermal Resistance (Typical) JA

H-Package (Still Air)
(400 LF/Min Air Flow)

165C/W
65C/W

N-Package
J-Package

165C/W
65C/W
130C/W

108C/W

M-Package

108C/W
190C/W

(Typical) JC
H-Package
Storage Temperature Range

21C/W

21C/W

65C to +150C

65C to +150C

Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
260C
Small Outline Package
Vapor Phase (60 seconds)
215C
Infrared (15 seconds)
220C
See AN-450 Surface Mounting Methods and Their Effect
on Product Reliability for other methods of soldering
surface mount devices.
ESD tolerance (Note 4)
800V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.
Note 2: For supply voltages less than 15V, the absolute maximum input
voltage is equal to the supply voltage.
Note 3: Refer to RETS4250X for military specifications.
Note 4: Human body model, 1.5 k in series with 100 pF.

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LM4250

Resistor Biasing
Set Current Setting Resistor to V
ISET
VS

0.1 A

0.5 A

1.0 A

5 A

10 A

1.5V
3.0V
6.0V
9.0V
12.0V
15.0V

25.6 M

5.04 M

2.5 M

492 k

244 k

55.6 M

11.0 M

5.5 M

1.09 M

544 k

116 M

23.0 M

11.5 M

2.29 M

1.14 M

176 M

35.0 M

17.5 M

3.49 M

1.74 M

236 M

47.0 M

23.5 M

4.69 M

2.34 M

296 M

59.0 M

29.5 M

5.89 M

2.94 M

Electrical Characteristics
LM4250 (55C TA +125C unless otherwise specified.) TA = TJ
VS = 1.5V
Parameter

ISET = 1 A

Conditions

Min

ISET = 10 A

Max

Min

Max

VOS

RS 100 k, TA = 25C

3 mV

5 mV

IOS

TA = 25C

3 nA

10 nA

Ibias

TA = 25C

7.5 nA

50 nA

Large Signal Voltage

RL = 100 k, TA = 25C

Gain

VO = 0.6V, RL = 10 k

40k
50k

Supply Current

TA = 25C

7.5 A

80 A

Power Consumption

TA = 25C

23 W

240 W

VOS

RS 100 k

4 mV

6 mV

TA = +125C

5 nA

10 nA

TA = 55C

3 nA

10 nA

IOS
Ibias

7.5 nA

0.6V

Input Voltage Range

Large Signal Voltage Gain

VO = 0.5V, RL = 100 k

50 nA

0.6V

30k

RL = 10 k
Output Voltage Swing

30k

0.6V

RL = 100 k

0.6V

RL = 10 k
Common Mode Rejection Ratio

RS 10 k

70 dB

Supply Voltage Rejection Ratio

RS 10 k

76 dB

Supply Current

70 dB
76 dB
8 A

90 A

VS = 15V
Parameter

Conditions

ISET = 1 A
Min

Max

ISET = 10 A
Min

Max

VOS

RS 100 k, TA = 25C

3 mV

5 mV

IOS

TA = 25C

3 nA

10 nA

Ibias

TA = 25C

7.5 nA

50 nA

Large Signal Voltage

RL = 100 k, TA = 25C

Gain

VO = 10V, RL = 10 k

Supply Current

TA = 25C

10 A

90 A

Power Consumption

TA = 25C

300 W

2.7 mW

VOS

RS 100 k

4 mV

6 mV

IOS

TA = +125C

25 nA

25 nA

TA = 55C

3 nA

10 nA

100k
100k

Ibias

7.5 nA

13.5V

Input Voltage Range

50 nA

13.5V

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LM4250

Electrical Characteristics

(Continued)
VS = 15V

Parameter

Conditions

ISET = 1 A
Min

Large Signal Voltage

VO = 10V, RL = 100 k

Gain

RL = 10 k

Output Voltage Swing

RL = 100 k

ISET = 10 A

Max

Min

Max

50k
50k

12V
12V

RL = 10 k
Common Mode Rejection Ratio

RS 10 k

70 dB

Supply Voltage Rejection Ratio

RS 10 k

76 dB

Supply Current
Power Consumption

70 dB
76 dB
11 A

100 A

330 W

3 mW

Electrical Characteristics
LM4250C (0C TA +70C unless otherwise specified.) TA = TJ
VS = 1.5V
Parameter

ISET = 1 A

Conditions

Min

ISET = 10 A

Max

Min

Max

VOS

RS 100 k, TA = 25C

5 mV

6 mV

IOS

TA = 25C

6 nA

20 nA

Ibias

TA = 25C

10 nA

75 nA

Large Signal Voltage Gain

RL = 100 k, TA = 25C

25k

VO = 0.6V, RL = 10 k
Supply Current

25k

TA = 25C

8 A

90 A

Power Consumption

TA = 25C

24 W

270 W

VOS

RS 10 k

6.5 mV

7.5 mV

IOS

8 nA

25 nA

Ibias

10 nA

80 nA

0.6V

Input Voltage Range

Large Signal Voltage

VO = 0.5V, RL = 100 k

Gain

RL = 10 k

Output Voltage Swing

0.6V

25k
25k

0.6V

RL = 100 k

0.6V

RL = 10 k
Common Mode Rejection Ratio

RS 10 k

70 dB

70 dB

Supply Voltage Rejection Ratio

RS 10 k

74 dB

74 dB

Supply Current
Power Consumption

8 A

90 A

24 W

270 W

VS = 15V
Parameter

Conditions

ISET = 1 A
Min

VOS

RS 100 k, TA = 25C

Max

ISET = 10 A
Min

Max

5 mV

6 mV

IOS

TA = 25C

6 nA

20 nA

Ibias

TA = 25C

10 nA

75 nA

Large Signal Voltage

RL = 100 k, TA = 25C

Gain

VO = 10V, RL = 10 k

Supply Current

TA = 25C

11 A

Power Consumption

TA = 25C

330 W

3 mW

VOS

RS 100 k

6.5 mV

7.5 mV

IOS

8 nA

25 nA

Ibias

10 nA

80 nA

www.national.com

60k
60k
100 A

LM4250

Electrical Characteristics

(Continued)
VS = 15V

Parameter

Conditions

ISET = 1 A
Min

Max

13.5V

Input Voltage Range

Large Signal Voltage

VO = 10V, RL = 100 k

Gain

RL = 10 k

Output Voltage Swing

RL = 100 k

ISET = 10 A
Min

Max

13.5V

50k
50k

12V
12V

RL = 10 k
Common Mode Rejection Ratio

RS 10 k

70 dB

Supply Voltage Rejection Ratio

RS 10 k

74 dB

Supply Current
Power Consumption

70 dB
74 dB
11 A

100 A

330 W

3 mW

Typical Performance Characteristics

Input Bias Current vs ISET

Input Bias Current vs

Temperature

Input Offset Current vs

Temperature

DS009300-15
DS009300-16

Unnulled Input Offset Voltage

Change vs ISET

Unnulled Input Offset Voltage

Change vs Temperature

DS009300-18

DS009300-17

Peak to Peak Output Voltage

Swing vs Load Resistance

DS009300-20
DS009300-19

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LM4250

Typical Performance Characteristics

Peak to Peak Output Voltage
Swing vs Supply Voltage

(Continued)

Quiescent Current (Iq) vs

Temperature

Quiescent Current (Iq) vs ISET

DS009300-23
DS009300-21

Slew Rate vs ISET

DS009300-22

Gain Bandwidth Product

vs ISET

Open Loop Voltage Gain

vs ISET

DS009300-24
DS009300-25

Phase Margin vs ISET

Input Noise Current (In) and

Voltage (En) vs Frequency

RSET vs ISET

DS009300-27

DS009300-29
DS009300-28

www.national.com

DS009300-26

LM4250

Typical Applications
X5 Difference Amplifier

500 Nano-Watt X10 Amplifier

DS009300-4
DS009300-3

Quiescent PD = 0.6 mW

Quiescent PD = 500 nW

Floating Input Meter Amplifier

100 nA full Scale

DS009300-8

Quiescent PD = 1.8 W
*Meter movement (0100 A, 2 k) marked for 0100 nA full scale.

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LM4250

Typical Applications

(Continued)
X100 Instrumentation Amplifier 10 W

DS009300-9

Note 5: Quiescent PD = 10 W.
Note 6: R2, R3, R4, R5, R6 and R7 are 1% resistors.
Note 7: R11 and C1 are for DC and AC common mode rejection adjustments.

RSET Connected to V

RSET Connected to Ground

DS009300-30

DS009300-11
DS009300-10

Transistor Current Sourcing

Biasing

FET Current Sourcing Biasing

DS009300-13

DS009300-12

*R1 limits ISET maximum

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Offset Null Circuit

DS009300-14

LM4250

Schematic Diagram

DS009300-1

Ordering Information
Temperature Range
Military

Commercial

55C TA +125C

0C TA +70C
LM4250CN

Package

NSC
Package
Number

8-Pin

N08E

Molded DIP
LM4250CM

8-Pin

LM4250CMX

Surface Mount

M08A

8-Pin
LM4250J-MIL

J08E

Ceramic DIP
LM4250CH

8-Pin

H08C

Metal Can

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LM4250

Physical Dimensions

inches (millimeters) unless otherwise noted

Metal Can Package (H)

Order Number LM4250CH
NS Package Number H08C

Ceramic Dual-In-Line Package (J)

Order Number LM4250J-MIL
NS Package Number J08A

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10

LM4250

Physical Dimensions

inches (millimeters) unless otherwise noted (Continued)

Small Outline Package (M)

Order Number LM4250CM or LM4250CMX
NS Package Number M08A

Molded Dual-In-Line Package (N)

Order Number LM4250CN
NS Package Number N08E

11

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LM4250 Programmable Operational Amplifier

Notes

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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

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