Area Efficient Comp
Area Efficient Comp
2
:W
2,m
=CMP( T
I
4n+3
I=4n
). (2).
The
3
-type cells in Group 3are very similar to
2
-type
cells, but ithas more logic levels, different inputs. A
3
-
type cell doesnt provide any comparison functionality.
These cells only limit the fan-in and fan-out irrespective
of operand bitwidth.Group 3 provides functionality
similar to group 2to continue or terminate the bitwise
comparison activity. If the comparison is terminated,
group 3 signals group 4 to set the left bus and right bus
bits to 0 for all bits of least significance.For 0 n N/4
1, there is a total of N/4
3
-type cells per level, with cell
function as
3
:W
3,m
=CMP( W
2,I
n
I=0
). (3).
Group 4 consists of -type cells. The outputs of these
cells control the selection line of -type cells in group 5.
The comparison outcomes from group 1 gives
information about the more significant bits to the -type
cells,which compute (0 x N 1)
:Z
k
= W
3, x/ 4-1Tx
I
i
x-1
=4x/ 4-1
. (4).
In the -type cells the number of inputs increases from
left to right in each partition, finishes with a fan-in of five.
Thus, the -type cells in group 4 determine whether group
5 propagates the bitwise comparison codes. The N -type
cells in group 5 produce the outputs to left and right bit
bus. One input of -type cell is (A
x
, B
x
) and the other is
hardwired to 00. The select control input is based on the
-type cell output from group 4. The 2-bits can be defined
as the left-bit code (A
x
) and the right-bit code (B
x
). All
left-bit codes and all right-bit codes combine to form the
left bus and the right bus, respectively. The output of -
type cells
x
1,0
denotes the greater-than, less-than, or
equal to final comparison decision
f
x
1,0
_
00, for A
x
=B
x
01, for A
x
<B
x
10, for A
x
>B
x
(5).
Essentially, the 2-b code
x
1,0
can be realized by OR-ing
all left bits and all right bits separately, as shown in the
decision module (Figs. 1 and 2), using an OR-gate
network in the form of NOR-NAND gates yielding a
more optimum gate structure
Area Efficient Digital Comparator Design Using Pseudo nMOS and
M.R. Thansekhar and N. Balaji (Eds.): ICIET14 1438
I0
1,]
1
= f
x
1
4j+3
x=4j
(6). R0
1,]
0
= f
x
0
4j+3
x=4j
(7).
Fig. 3. Implementation details of the comparison resolution module (groups 1 through 5) and the decision module [5].
The power 1 and 0 in (6) and (7) denote the addition
of the left and right bits, respectively, and the suffix 1
denotes the first level of OR-logic in the decision module
that receives data directly from group 5.
IV. RESULTS AND DISCUSSION
This section analyzes the area (in number of
transistors), operating speed, and power requirements of
our proposed comparator architecture and calculates the
number of logic levels required for an N-bit comparator
based on simple logic gates.
A. Area Calculation
The total number of cells required is derived and use
Table 4.1 to translate the cell counts into transistors for an
N-bit comparator. Based on (1)(7), the number of E
CRM
cells required for the comparison resolution module and
the numbers of E
DM
cells in the decision module is,
respectively
E
CRM
=(N) +(
N
4
2
) +( log16N
N
4
3
) +(N ) +
(N ). (8).
E
DM
=2 N
x
/ 4
Iog4N
x=1
(9).
Table III shows the total number of cells and the required
number of levels per group for various comparator
bitwidths based on (8) and (9). The cell counts in Table III,
along with the number of transistors per cell type (Table
II), allow us to derive the total number of transistors for
various bitwidths (Table IV). The results show an
approximate linear growth in comparator size as a function
of bitwidth.
B. Input-Output Delay
This section analyzes the critical path delay of the
proposed comparator with N-bit inputs. The delay
DELAY
CRM
for the comparison resolution module is
Area Efficient Digital Comparator Design Using Pseudo nMOS and
M.R. Thansekhar and N. Balaji (Eds.): ICIET14 1439
TABLE III
TOTAL NUMBER OF CELLS AND CIRCUIT LEVELS IN EACH GROUP FOR VARIOUS COMPARATOR BITWIDTHS.
Size of the
Comparator
Group 1 Group 2 Group 3 Group 4 Group 5
Cells Levels Cells Levels Cells Levels Cells Levels Cells Levels
16-b 16 1 4
2
1 4
3
1 16 1 16 1
32-b 32 1 8
2
1 8
3
1 32 1 32 1
64-b 64 1 16
2
1 16
3
1 64 1 64 1
TABLE IV
TOTAL NUMBER OF TRANSISTORS FOR VARIOUS COMPARATOR BITWIDTHS.
DELAY
CRM
=D
group1
+D
group2
+D
group3
+D
group4
+
D
group5
.(10).
All terms, except the third, on the right-hand side of (10)
entail a single gate delay D
U
, resulting in
DELAY
CRM
=D
U
+D
U
+( log
16
(N) )D
U
+D
U
+D
U
=4D
U
+( log16 (N) ) D
U
(11).
The delay DELAY
DM
for the decision modules NOR-
NAND gate network is
DELAY
DM
=(log
4
(N)) D
U
. (12).
The total comparator delay DELAY
T
from input to output
for an N-bit comparator is
D
T
=4D
U
+( log
16
(N) ) D
U
+( log
4
(N) )D
U
. (13).
Fig. 4.Maximuminput-output delay versus input bitwidth.
The maximum total input-to-output delay versus input
bitwidth for the proposed comparator is shown in Fig. 4.
The graph (Fig.4) shows that the delay is increased
linearly with respect to the comparator bit size. This
comparator offers a 33% speed advantage over the design
in [15] and 59% speed advantage over the design in [13].
V. RESULT COMPARISON
To evaluate the functionality and performance of this
comparator, the complete design is simulated with various
inputs using the T-Spice simulator with 0.15m-TSMC
digital CMOS technology. The worst case delay of this
comparator is calculated by turn on the maximum number
of cells, including all the lower significant cells. Here the
objective is to increase the operating speedand reduce the
transistor counts. Themaximum measured cell delay was
0.0847 ns for the -type cell with a maximum fan-in
offive and a maximum fan-out of one. This comparator is
evaluated with conventional CMOS comparator design,
whose structures represent recently proposed topologies
and circuits targeted for high-speed operation and power
savings. Simulation results for 64-b comparator and
reported results for conventional CMOS comparator
design and proposed comparator design are shown in
Table V. The maximum total input-to-output delay versus
input bitwidth for our comparator is shown in Fig. 4. The
simulation results closely match the analytical model in
Table IV.
0 10 20 30 40 50 60 70
0.4
0.5
0.6
0.7
0.8
0.9
1
Comparator bit size (bits)
I
n
p
u
t
-
o
u
t
p
u
t
d
e
l
a
y
(
n
s
)
Size of the
Comparator
Number of Transistors
Group 1 Group 2 Group 3 Group 4 Group 5 Total
16-b 16 6 4 5 4 5 16 16 16 10 552
32-b 32 6 8 5 4 5 32 16 32 10 1084
64-b 64 6 16 5 4 5 64 16 64 10 2148
Area Efficient Digital Comparator Design Using Pseudo nMOS and
M.R. Thansekhar and N. Balaji (Eds.): ICIET14 1440
TABLE V
RESULTS COMPARISON BETWEEN EXISTING AND PROPOSED DESIGN.
Comparator Type
(Technology)
Transistor Count Maximum Input-
Output Delay
Salehet al. [5]
(150nm)
4000
(64-bit)
0.86ns
Proposed
comparator (150
nm)
2210
(64-bit)
0.89ns
VI. CONCLUSION
This work proposed a high-speed, low-power and area-
efficient comparator using parallel prefix structure
consisting of the comparison resolution module and the
decision module. These modules are designed using
simple logic gateswith a maximum fan-in of 5 and fan-out
of 4, independent of the input bitwidth. The cells used in
this comparator are designed using pass transistor logic
and pseudo nMOS logic. These logic styles reduce the
number of transistors required in the design. Leveraging
the parallel prefix tree structure for the comparator design
is novel in that this design performs the comparison
operation from the MSB to the LSB, using parallel
operation. In this design, all cells are locally
interconnected, which avoids the need for large cell
drivers, thus balancing all cells to a uniform transistor
size. This comparator is designed in Tanner EDA tool
using 180nm digital CMOS technology and simulated
using T-Spice simulation tool.
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