This document discusses modeling a Darlington transistor in PSpice. It begins by introducing PSpice and its use for circuit simulation. It then describes modeling the TIP120 Darlington transistor by extracting parameters from its datasheet into a PSpice model using the Model Editor. Simulation results are shown that match the transistor's characteristics like current gain and saturation voltage. The document concludes that PSpice is a useful tool for circuit analysis when accurate device models and parameters are used.
This document discusses modeling a Darlington transistor in PSpice. It begins by introducing PSpice and its use for circuit simulation. It then describes modeling the TIP120 Darlington transistor by extracting parameters from its datasheet into a PSpice model using the Model Editor. Simulation results are shown that match the transistor's characteristics like current gain and saturation voltage. The document concludes that PSpice is a useful tool for circuit analysis when accurate device models and parameters are used.
This document discusses modeling a Darlington transistor in PSpice. It begins by introducing PSpice and its use for circuit simulation. It then describes modeling the TIP120 Darlington transistor by extracting parameters from its datasheet into a PSpice model using the Model Editor. Simulation results are shown that match the transistor's characteristics like current gain and saturation voltage. The document concludes that PSpice is a useful tool for circuit analysis when accurate device models and parameters are used.
This document discusses modeling a Darlington transistor in PSpice. It begins by introducing PSpice and its use for circuit simulation. It then describes modeling the TIP120 Darlington transistor by extracting parameters from its datasheet into a PSpice model using the Model Editor. Simulation results are shown that match the transistor's characteristics like current gain and saturation voltage. The document concludes that PSpice is a useful tool for circuit analysis when accurate device models and parameters are used.
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Darlington transistor modeling and
simulation of the PSpice
O INTRODUCTION SPICE is a powerful general-purpose analog and mixed-mode circuit simulator, which is mainly used to verify the circuit design to predict the circuit functions. This is particularly important for the integrated circuit. Is for this reason that the University of California at Berkeley in the electronic research laboratory SPlCE available, as the meaning of its name: Simulation Progranl for Integrated Circuits Empha-sis. PSpice is a PC version of SPICE (from OrCAD Corp.of Cadence Design Systems, Inc.). Although initially used for IC design, but due to the design of low-cost computing, as well as the promotion of stability, a growing number of circuit and system designers have been aware of the advantages of analog circuit simulation. In this way, the device model of active devices can be asked to re-consider, so many semiconductor companies have to provide appropriate SPICE model as a part of technical support functions. PSpice has embedded algorithms or models used to describe the functions of many devices. A series of model parameters used to describe the function of the embedded model. We can model through the application of PSpice syntax set up a model of all or any parameters to define a model based on embedded devices. 1 Darlington transistor modeling of PSpice PSpice Model Editor is a model extractor, the process used in the simulation of PSpice A / D models have a definition. Characteristics described in the model most commonly used method is a device characteristic of each input data sheet information. We are satisfied with the characteristics of each, we can use Model Editor estimate (or extract) the corresponding model parameters and produce characteristic curve chart. This is known as the molding process. Usually, we always repeat this process until we get satisfactory results and save them. Model Editor to generate model-base, model base that contains the appropriate model and the definition of sub-circuit. Darlington transistors (often referred to as a Darlington pair) is a semiconductor device, which consists of two bipolar transistors, so the first current amplifier and then to enlarge the second time to enlarge further. The overall current gain equal to the two individual gains multiplied together: Darlington current gain of, hFE = hFEl hFE2 (hFFl and are separate hFE2 gain transistor, where hFE = I (CdllectorCurrent) / IBaseCurrent) This Darlington transistor has a very high gain, such as 10000, so only a very small base current can be guided around the transistor Harrington. A Darlington transistor performance as a very high current gain as a separate transistor. It has three pins (B, c and E), this equivalent to a standard three-pin single transistor. The largest collector current Ic (max) equivalent to T2 of the Ic (max), T2 in the next Figure l the second transistor. When a Darlington transistor to switch off, the map used to reduce the conversion delay resistance.
Modeling a Darlington transistor, we check the data sheet TIPl20 chip for reference. As we mentioned above, we have from the device data sheet information input through the model editor conversion, can be converted to use PSpice syntax for setting the parameters of the model model group, or generated by PSpice SUBCKT syntax branch circuit netlist, and then save these definitions to model libraries, so that when the need for PSpice simulation model of the time to be able to search. Model definition is complete, we can think that the creation of a Darlington components, as shown in Figure 2:
Picture not clear? Click here to view the image (larger). Darlington 2 PSpice for the simulation of a typical transistor characteristics TIPl20 To analyze the characteristics of a typical TIPl20, we have adopted the equivalent circuit of Figure 1, where TIPl20 data in accordance with Table Rl = 8K, R2 = O. 12K. Since the Darlington transistor is often used to enlarge small signals so weak signals can clearly be another circuit, or computer / microprocessor to detect, to assess the current gain (hFE) characteristics. PSpice simulation results shown in figure 3.
Picture not clear? Click here to view the image (larger). At the same time, electrical properties of the collector current vs. Input current at different collector emitter saturation voltage of a state, the collector - emitter saturation voltage and collector current relationship between the simulation results are shown in Figure 4 Figure 5. The simulation results show and very TIPl20 match the data sheet.
Picture not clear? Click here to view the image (larger). 3 Conclusion TIPl20 extracted from the above model and PSplce. PSpice simulation results show that we can come to the conclusion, PSpice program for electrical engineering industry is really a very useful research tool. It allows us to simulation of single components and electronic circuits, the circuit for a large number of different verification and analysis of circuit performance prediction. It is such a flexible and generally are so stable, so many engineers to use it as a "software oscilloscope."
Picture not clear? Click here to view the image (larger). However, SPICE simulation results is satisfactory, to a large extent depend on the simulation model and device parameter components. The rapid development of the electronics industry technology, but also the differences in device characteristics of such a large, so only the default parameters are not effectively reflect the characteristics of the device. If in a SPICE simulation of the application of the wrong device or model parameter, then the power of all computers on the wasted, as an old proverb: "the importation of garbage, the output is garbage."