University Questions

(Chapter 1)

1. Draw the electric equivalent circuit for the high frequency capacitor. (2M)

2. Compute the high frequency impedance of a 20 PF capacitor in terms of F (frequency). Whose
dielectric medium consists ofan aluminium oxide (Al
2
0
3
) processing a series loss tangent of
10
- 4
and whose leads are 1.25 cm with cu = 64.51 X 106 ohm
-l
m
-l
. (4M)

3. Write notes on Chip resistors, chip capactiors and surface mounted inductors. (10M)

4. Compute the skin depth for copper ,aluminium at 1GHz and 10 GHz and find the resistance of
a 10 cm woire with diameter of 1mm, cu = 64.51 X 10
6
S/ m,Al = 40 X 10
6
S/ m. (6M)

5. Explain RF behaviour of high frequency resistor, capacitor and inductors. (10M)

6. Write short note on Chip components. (5M)

7. Explain what Skin depth is. (3M)

8. Calculate the skin depth for copper and aluminum at 0.86 and 1.2GHz.Also find the resistance
of an8cm Wire with diameter of l.5mm. cu = 64.51 X 10
6
S/ m,Al = 40 X 10
6
S/ m. (7M)

9. The leads of a resistor in an RF circuit are treated as straight aluminium wires (Al = 40 X 10
6

S/ m) of AWG size 14 cd = 64 mil) and of total length of 5 cm.
(i) Compute the DC resistance
(ii) Find the AC resistance and inductance at 100 MHz, 1 GHz, and 10 GHz operating
frequencies. (6M)

10. A typical PCB substrate consists of Al
2
O
3
with a relative dielectric constant of 10 and a loss
tangent of 0.0004 at 10 GHz.Find the conductivity of substrate. (5M)


11. Draw the electric equivalent circuit for the high frequency capacitor with characteristics. (3M)

12. Compute the high frequency impedance of a 20 PF capacitor in terms of F (frequency). Whose
dielectric medium consists ofan aluminium oxide (Al
2
0
3
) processing a series loss tangent of 10
-
4
and whose leads are 1.25 cm with AWG 26 copper wire.cu = 64.516 X 10
6
ohm
-l
m
-l
. (7M)






(Chapter 2)

1. Compute the transmission line parameters for a parallel plate transmission line.
Given-
diet
= 0.125 m s/m, cond = 64.5 16 x 10
6
ohm
-1
m
-1
, W = 6 mm, Er = 2.25.
r
= 1
d = 1 mm, f = 1 GHz (6M)

2. Consider a load Z
L
= 60 + j 20 ohms connected to a lossy transmission line. Z
0
= (0.1+ j
200)/ (0.05 + j 0.003). Determine the reflection coefficent and SWR at load. (4M)

3. For the following transmission line system compute input power and power delivered to
the load (10M)



4. Draw the lumped element circuit model for the transmission line.Derive the expression
for the voltage and current travelling waves. (4M)

5. With the help of suitable derivation, explain power considerations for a transmission line.
(8M)

6. For a transmission line circuit involving source and load terminations of Z
G
=60 and Z
L

= 50 respectively and Z
O
= 75, compute the input power and power delivered to the
load. Assume length of line to be /4 with sourceof V
G
= 8V. (10M)

7. Expalin the equivalent circuit of the transmission line. (05 M)

8. Derive the input impedance equation of transmission line of length l (05 M)

9. Using the input impedance equation of transmission line, derive the input impedance
equation for the shorted and open circuit transmission line and draw their voltage ,current
and impedance waveforms. (10M)

10. Starting with the basic definition for the Standing Wave ratio (SWR):-

|

|
|

|
|

|


Show that it can be expressed as

|

|
|

|
(5M)
11. A radio transmitter is capable of producing 3Woutput power. The transmitter is
connected to an antenna having characteristic impedanceof 75. The connection is made
using lossless co-axial cable with 50 characteristic impedance. Calculate the power
delivered to antenna is the source impedance is 45 and the cable length is 11. (10M)

12. Write short note on microstirp transmission line (5M)

13. A 100 microtrip line is connected to a 75 line. Determine ,SWR,percentage power
reflected, return loss,percentage power transmiteed and insertion loss (10M)

14. Draw equivalent circuit representation of two wire transmission line. Explain primary and
secondary parameters for the same (5M)

Show that return loss and insertion loss can be xepressed in terms of volatge standing
wave ratio as-(10M)

15. The characteristic impedance of a coaxial cable is 75 and assumed lossless. If the load
is short circuit. Find the input impedance if cable is 2 wavelength, 0.75 wavelength, 0.5
wavelength and one wavelength in length. (10M)

16. Derive power considerstion for the transmission line when
i. Load and source impedance are matched.
ii. Load impedance is matched and sourcs impedance is mismatched. (10M)

















(Chapter 3)

1. Define smith chart, compressed smith chart, VSWR, Reflection coefficient,
Characteristic impedance. (5M)

2. A transmission line of characteristic impedance Z
0
=50 and d= 0.18 is terminated in a
load impedance of Z
L
= (25-j30) .Find the reflection coefficient, input impedance at
distance d and VSWR by using Z-Smith chart. (10M)

3. Plot the following Impedance points on the smith chart? Zo = 50. (23 +j 42),
(12 -j 109), (72 +j 42.5) and (115-j 22) . Calculate their equivalent admittance
using smith chart? (8M)

4. Calculate the input impedance of the Transmission line using equations and the smith
Chart, for Zo= 50, Z
L
= (110+j 22), r= 1.0, length of the line =20 cm and operating
frequency equal to 1.8GHz (12M)

5. How the capacitors and inductors are realized using the sections of transmission line?
Explain the same using the smith charts? (6M)

6. An unknown load impedance is connected to a 0.3 long, 50 lossless tansmission
line.The SWR and the phase of the reflection coefficientmeasured at the input of line are
2.0 and -20
0
respectively.Using smith chart,determine the input and load impedance
(10M)

7. A load impedance of (40 + j 70) ohms terminates a 100 ohms transmission line i.e. 0.3
long. Find the reflection coefficient of the load, the reflection coefficient at the input to
the line, the input impedance, the SWR in the line and the return loss. (6M)

8. Consider the case of matching a 73 load to a 50 ohm line by means of a /4
transformer. Assume the matching is achieved for a center frequency of f
c
= 2 GHz. Plot
the SWR for the frequency range 1/3 f/f
c
3. (10M)

9. A transmission line of characteristic impedance Z
0
=50 and d= 0.15 is terminated in a
load impedance of Z
L
= (25-j30) . Find the reflection coefficient, input impedance at
distance d and VSWR by using Z-Smith chart. (10M)

10. Identify the following normalized impedances and convert into admittances. Using Smith
Chart. Also find corresponding reflection coefficients and SWR (10M)
a. Z = 0.1 + j 0.7
b. Z = 0.2 - j 0.7
c. Z = 0.5


















(Chapter 4)


1. Explain the following parameters- (10M)
a. Insertion loss
b. Ripple
c. Bandwidth
d. Shield factor and
e. Rejection.

2. Design a low-pass filter whose input and output are matched to 50 impedance with cut-
off frequency of 3GHz, equi-ripple of 0.5dB and rejection of atleast 40dB at
approximately twice the cut-ooff frequenct. Assume a dielectric material that results in a
phase velocity of 60% of the speed of light. (12M)

3. Explain the role of scattering paprameters and its properties at RF and microwaves.(10M)

4. explain the following terms related to filter design:
Insertion loss, Ripple factor, bandwidth (6M)

5. Expalin why ideal filter response cannot be realized (4M)

6. Design the Butterworth high pass filter having cutoff frequency of 250 MHz and 15dB
response at 200 MHz. (10M)

7. What are Kuroda identities? How they are used in realization of RF filters. (10M)

8. Design a prototype low-pass Butterworth filter that will provide atleast 20 dB attenuation
at the frequency of f = 2 f3dB. Compute and plot the amplitude response for 0 to 5 GHz.
(10 M)

9. Plot the insertion loss of a low pass Chebyshev filter that has 6 dB ripple in the
passband and at least 50 dB attenuation at f = 2 f cut-off. (10 M)

10. An N=3 Chebyshey bandpass filter is to be designed with a 3dB passband ripple for a
communication link.The centre frequency is at 2.4GHz and the filter has meet a
bandwidth requirement of 20%. The filter has to be inserted into 50 characteristic line
impedance. Find inductive and capacitive elements. Show the attenuation response from
1 to 4 GHz. (12M)
11. Prove the first three Kurodas identity by computing the appropriate ABCD matrices.
(10M)
12. Write short note on butterworth filter. (5M)

13. Find the attenuation of 4-element, 2.5dB ripple, low pass Chebyshev fiter at

(10M)
14. Explain Richards transformation and Kurodas identity.How are they used in realization
of RF filter. (10M)

15. Define unit element and find the ABCD parameters for the following circuit using the
Kurodas identity. (10M)







16. A two-port transistorized network have the following scattering matrix:
[] [

]

determine wheteher the transistorized network is reciprocal and lossless. If port 2 is
terminated with a matched load, What is the return loss seen at port1? If port 2 is
terminated with short circuit ,what is the return loss seen at port 1? (10M)















Unit element
Z
1

Y
c
=S/Z
2










(Chapter 5)
1. Explain the current flow in pn junction and give the expression for I
diff
in terms of
diffusion constant and V
diff
in terms of doping concentration. (4M)

2. Explain Schottky contact with the help of Energy Band diagram for metal and
semiconductor do not interact and metal semiconductor contact. (10M)

3. Explain the different types of diode models (RF) and differentiare them with respect to
the junction capacitance, band energy and conductance. (10M)

4. Explain the construction and operation of HEMT and RF field effect transistor. (10M)

5. Write short note on HEMT (5M)

6. Expalin what are Schottky Contacts (4M)

7. A BJT is encapsulated in a plastic housing and mounted on a heat sink (R
tha
=3.75
0
C/W)
under these conditions the total power dissipation is supposed to be 20W. At an ambient
temperature of 20
0
C. What rating has the enginner to choose for the BJT casing if the
maximum juction temperature should not excced 175
0
C. (10M)

8. An abrupt pn- junction made of S
i
has the acceptor and donor concentrations of N
A
= 10
18

cm
-3
and N
D
=5*10
15
cm
-3
, respectively. Assuming that the device operates at room
temperature ,dtermine:
a. The barrier voltage
b. The spacecharge widthin the p and n type semiconductor
c. The peak electric field across the junction.
d. the junction capacitance for a cross sectiona area of 10
-4
cm
2
and a relative
dielectric constant of
r
=11.7 (12M)

9. For GaAs we find at T=300
0
K the effective densities of state N
c
=4.7*10
17
cm
-3
, N
v
=
7*10
18
cm
-3
assuming that the band ghap energy of 1.42eV remains constant, Find the
intrinsic carrier concentration at room temperature, compute n
i
at T= 400
0
K. (5M)

10. An abrupt pn- junction made of Si has the accep-tor and donor concentrations of N
A
=
10
18
cm
-3
and N
D
=5*10
15
cm
-3
, respectively.assumong that the device operates at room
temperature ,determine:
a. The barrier voltage
b. The spacecharge widthin the p and n type semiconductor (10M)

11. Explain Schottky diode with cross sectional view and circuit model. (8M)

12. Explain construction and functionality of HEMT (10M)

13. Explain physical properties of semiconductors (5M)




























(Chapter 6)
1. Show the RF small signal circuit model and equivalent model using Miller Effect. Find
the values of CM
1
and CM
2
in terms of Cbe, Vceand Vbc. (10M)

2. Write short note on
a. Small signal BJT model
b. large signal FET model
c. AC parameters of BJT (15M)

3. Define and derive AC parameters for BJT and FETs (10M)

4. Explain simplified Ebers-Moll model for the forward active mode of transistor. (5M)

5. Obtain the h-parameter representation for a BJT in common base configuration,
neglecting base,emitter and collector resistances.(r
B
, r
E
and r
C
) (10M)

6. For the simplified FET model shown determine the capacitances Cgs and Cgd as well as
g
m
. Show that for low frequency operation it is sufficient to record the drain current and
gate-source voltage under short circuit output condition. (10M)



7. Draw the small signal h-parameter representation of BJT and find the values of r,
C, ro and gm. Given

= 6 mA,

VAN = 30 V, V
T
= 0.026 V,
f
T
=37GHz. (10M)