April 2009

2009 Fairchild Semiconductor Corporation

FDMS7670 Rev.D
www.fairchildsemi.com 1
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FDMS7670
N-Channel PowerTrench

MOSFET
30 V, 3.8 m
Features
Max r
DS(on)
=3.8 m at V
GS
=10 V, I
D
=21 A
Max r
DS(on)
=5.0 m at V
GS
=4.5 V, I
D
=17 A
Advanced Package and Silicon design for low r
DS(on)
and high
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Bottom
Power 56
Top
Pin 1

G
S
S
S
D
D
D
D
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A
=25 C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 4) 20 V
I
D
Drain Current -Continuous (Package limited) T
C
=25 C 42
A
-Continuous (Silicon limited) T
C
=25 C 105
-Continuous T
A
=25 C (Note 1a) 21
-Pulsed 150
E
AS
Single Pulse Avalanche Energy (Note 3) 144 mJ
P
D
Power Dissipation T
C
=25 C 62
W
Power Dissipation T
A
=25 C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage J unction Temperature Range -55 to +150 C
R
J C
Thermal Resistance, J unction to Case 2.0
C/W
R
J A
Thermal Resistance, J unction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7670 FDMS7670 Power 56 13 12 mm 3000 units
www.fairchildsemi.com 2
FDMS7670 Rev.D
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Electrical Characteristics T
J
=25 C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
=250 A, V
GS
=0 V 30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
=250 A, referenced to 25 C 15 mV/C
I
DSS
Zero Gate Voltage Drain Current V
DS
=24 V, V
GS
=0 V 1 A
I
GSS
Gate to Source Leakage Current, Forward V
GS
=20 V, V
DS
=0 V 100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
=V
DS
, I
D
=250 A 1.25 1.9 3.0 V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
=250 A, referenced to 25 C -7 mV/C
r
DS(on)
Static Drain to Source On Resistance
V
GS
=10 V, I
D
=21 A 2.9 3.8
m V
GS
=4.5 V, I
D
=17 A 4.1 5.0
V
GS
=10 V, I
D
=21 A, T
J
=125 C 4.0 5.3
g
FS
Forward Transconductance V
DS
=5 V, I
D
=21 A 136 S
C
iss
Input Capacitance
V
DS
=15 V, V
GS
=0 V,
f =1 MHz
3085 4105 pF
C
oss
Output Capacitance 990 1315 pF
C
rss
Reverse Transfer Capacitance 75 115 pF
R
g
Gate Resistance 1.2 2.5
t
d(on)
Turn-On Delay Time
V
DD
=15 V, I
D
=21 A,
V
GS
=10 V, R
GEN
=6
15 26 ns
t
r
Rise Time 6 12 ns
t
d(off)
Turn-Off Delay Time 31 50 ns
t
f
Fall Time 5 10 ns
Q
g
Total Gate Charge V
GS
=0 V to 10 V
V
DD
=15 V,
I
D
=21 A
40 56 nC
Q
g
Total Gate Charge V
GS
=0 V to 4.5 V 17 24 nC
Q
gs
Gate to Source Charge 9.8 nC
Q
gd
Gate to Drain Miller Charge 4.4 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
=0 V, I
S
=2.1 A (Note 2) 0.7 0.95
V
V
GS
=0 V, I
S
=21 A (Note 2) 0.8 1.1
t
rr
Reverse Recovery Time
I
F
=21 A, di/dt =100 A/s
38 61 ns
Q
rr
Reverse Recovery Charge 19 34 nC
t
a
Reverse Recovery Fall Time 14 ns
t
b
Reverse Recovery Rise Time 24 ns
S Softness (t
b
/t
a
) 1.7
t
rr
Reverse Recovery Time
I
F
=21 A, di/dt =300 A/s
32 51 ns
Q
rr
Reverse Recovery Charge 34 54 nC
Notes:
1. R
J A
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J C
is guaranteed by design while R
CA
is determined by
the user's board design.


2. Pulse Test: Pulse Width <300 s, Duty cycle <2.0%.
3. E
AS
of 144 mJ is based on starting T
J
=25 C, L =1 mH, I
AS
=17 A, V
DD
=27 V, V
GS
=10 V. 100% test at L =0.3 mH, I
AS
=22 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
a. 50 C/W when mounted on a
1 in
2
pad of 2 oz copper.
b. 125 C/W when mounted on a
minimum pad of 2 oz copper.
www.fairchildsemi.com 3
FDMS7670 Rev.D
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Typical Characteristics T
J
=25 C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0
0
30
60
90
120
150
V
GS
= 3.5 V
V
GS
= 10 V


PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
GS
= 4 V V
GS
= 5 V
V
GS
= 4.5 V
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 30 60 90 120 150
0
1
2
3
4
5
V
GS
= 3.5 V


PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
N
O
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D
R
A
I
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T
O

S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
I
D
, DRAIN CURRENT (A)
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 5 V V
GS
= 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6


I
D
= 21 A
V
GS
= 10 V
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O
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A
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I
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E
D

D
R
A
I
N

T
O

S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
2 4 6 8 10
0
3
6
9
12
15
T
J
= 125
o
C
I
D
= 21 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
S
(
o
n
)
,

D
R
A
I
N

T
O

S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E

(
m

)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1 2 3 4 5
0
30
60
90
120
150
T
J
= 150
o
C
V
DS
= 5 V


PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C T
J
= 25
o
C
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100

T
J
= -55
o
C
T
J
= 25
o
C T
J
= 150
o
C

V
GS
= 0 V
I
S
,

R
E
V
E
R
S
E

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
500
Source to Drain Diode
Forward Voltage vs Source Current
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FDMS7670 Rev.D
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Figure 7.
0 10 20 30 40
0
2
4
6
8
10
I
D
= 21 A


V
DD
= 20 V
V
DD
= 10 V
V
G
S
,

G
A
T
E

T
O

S
O
U
R
C
E

V
O
L
T
A
G
E

(
V
)
Qg, GATE CHARGE (nC)
V
DD
= 15 V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
50


f = 1 MHz
VGS = 0 V
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
5000
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01 0.1 1 10 100 1000
1
10
100
T
J
= 100
o
C


T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
A
S
,

A
V
A
L
A
N
C
H
E

C
U
R
R
E
N
T

(
A
)
40
Unclamped Inductive
Switching Capability
Figure 10.
25 50 75 100 125 150
0
20
40
60
80
100
120
V
GS
= 4.5 V
Limited by Package R
JC
= 2.0
o
C/W
V
GS
= 10 V
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
C
, CASE TEMPERATURE (
o
C)
Maximum Continuous Drain
Current vs Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
10 s
1 s
DC
100 ms
10 ms
1 ms


100 us
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
300
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 12.
10
-4
10
-3
10
-2
10
-1
1 10
100 1000
0.5
1
10
100
1000
10000
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
V
GS
= 10 V


P
(
P
K
)
,

P
E
A
K

T
R
A
N
S
I
E
N
T

P
O
W
E
R

(
W
)
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics T
J
=25 C unless otherwise noted
www.fairchildsemi.com 5
FDMS7670 Rev.D
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Figure 13.
10
-4
10
-3
10
-2
10
-1
1 10
100 1000
0.0005
0.001
0.01
0.1
1
2
SINGLE PULSE
R
JA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
N
O
R
M
A
L
I
Z
E
D

T
H
E
R
M
A
L

I
M
P
E
D
A
N
C
E
,

Z

J
A
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01 P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
J A
x R
J A
+ T
A
Junction-to-Ambient Transient Thermal Response Curve
Figure 14.
-120 -90 -60 -30 0 30 60
-5
0
5
10
15
20
25
di/dt = 300 A/s


TIME (ns)
C
U
R
R
E
N
T

(
A
)
0 30 60 90 120 150 180
-5
0
5
10
15
20
100
di/dt = 300 A/s


TIME (ns)
C
U
R
R
E
N
T

(
A
)
Body Diode Reverse
Recovery Characteristics
Figure 15.
Typical Characteristics T
J
=25 C unless otherwise noted
www.fairchildsemi.com 6
FDMS7670 Rev.D
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Dimensional Outline and Pad Layout

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FDMS7670 Rev.D 7 www.fairchildsemi.com

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Auto-SPM
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
EcoSPARK

EfficentMax
EZSWITCH *
*

Fairchild

Fairchild Semiconductor

FACT Quiet Series

FACT

FAST

FastvCore
FETBench
FlashWriter

*
FPS
F-PFS
FRFET

Global Power Resource

SM
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MillerDrive
MotionMax
Motion-SPM
OPTOLOGIC

OPTOPLANAR

PDP SPM
Power-SPM
PowerTrench

PowerXS
Programmable Active Droop
QFET

QS
Quiet Series
RapidConfigure

Saving our world, 1mW /W /kW at a time

SmartMax
SMART START
SPM

STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock
*
The Power Franchise

TinyBoost
TinyBuck
TinyLogic

TINYOPTO
TinyPower
TinyPWM
TinyWire
TriFault Detect
TRUECURRENT*
SerDes
UHC

Ultra FRFET
UniFET
VCX
VisualMax
XS
tm

tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I40