BAT81S... BAT83S: Vishay

BAT81S...
BAT83S
Vishay Semiconductors
Small Signal Schottky Barrier Diodes

Features
D Integrated protection ring against static
discharge
D
D
D
D
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
Applications
94 9367
General purpose and switching Schottky barrier diode

HFDetector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Order Instruction
Type
Type Differentiation
BAT81S
VR = 40 V
BAT82S
VR = 50 V
BAT83S
VR = 60 V
Ordering Code
BAT81STAP
BAT81STR
BAT82STAP
BAT82STR
BAT83STAP
BAT83STR
Remarks
Ammopack
Tape and Reel
Ammopack
Tape and Reel
Ammopack
Tape and Reel
Absolute Maximum Ratings

Tj = 25_C
Parameter
Test Conditions
Reverse voltage
g
Peak forward surge current
Repetitive peak forward current
Forward current
Junction temperature
Storage temperature range
Document Number 85512

Rev. 4, 12-Feb-01
tp10ms
tp1s
Type
BAT81S
BAT82S
BAT83S
Symbol
VR
VR
VR
IFSM
IFRM
IF
Tj
Tstg
Value
40
50
60
500
150
30
125
65...+150
Unit
V
V
V
mA
mA
mA
C
C
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1 (4)
BAT81S...BAT83S
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=4 mm, TL=constant
Symbol
RthJA
Value
320
Unit
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
IF=0.1mA
IF=1mA
IF=15mA
VR=VRmax
VR=1 V, f=1MHz
Forward voltage
g
Reverse current
Diode capacitance
Type
Symbol
VF
VF
VF
IR
CD
Min
Typ
Max
330
410
1
200
1.6
Unit
mV
mV
V
nA
pF
Characteristics (Tj = 25_C unless otherwise specified)

PR Reverse Power Dissipation ( mW )
14
1000
VR = 60 V
RthJA=
540K/W
10
IF Forward Current ( A )
12
PRLimit
@100%VR
8
6
PRLimit
@80%VR
4
2
Tj = 150C
10
Tj = 25C
1
0.1
0.01
0
25
50
75
100
125
150
Tj Junction Temperature ( C )
15794
0.5
1.0
1.5
2.0
VF Forward Voltage ( V )
15796
Figure 1. Max. Reverse Power Dissipation vs.

Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
1000.0
2.0
VR = VRRM
f=1MHz
1.8
CD Diode Capacitance ( pF )
I R Reverse Current ( mA )
100
100.0
10.0
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
25
15795
50
75
100
125
Tj Junction Temperature ( C )
Figure 2. Reverse Current vs. Junction Temperature
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2 (4)
0
0.1
150
15797
1.0
10.0
100.0
VR Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage

Rev. 4, 12-Feb 01
BAT81S...BAT83S
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
94 9366
1.7 max.
Standard Glass Case

54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g

Rev. 4, 12-Feb-01
26 min.
3.9 max.
26 min.
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3 (4)
BAT81S...BAT83S
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)

Rev. 4, 12-Feb 01
This datasheet has been download from:

www.datasheetcatalog.com
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BAT81S...

Small Signal Schottky Barrier Diodes

General purpose and switching Schottky barrier diode

Absolute Maximum Ratings

Document Number 85512

Characteristics (Tj = 25_C unless otherwise specified)

Figure 1. Max. Reverse Power Dissipation vs.

Figure 3. Forward Current vs. Forward Voltage

Figure 2. Reverse Current vs. Junction Temperature

Figure 4. Diode Capacitance vs. Reverse Voltage

Document Number 85512

Standard Glass Case

Document Number 85512

Document Number 85512

This datasheet has been download from:

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