DEPARTMENT OF ECE

1
UNIT-V&VI
Construction: - 3mm
25 m

E C E C
P N P N P N 1mm



B E B


P N
Silicon diode N 5 m 0.3mm



C


NPN







Potential barrier at the
junctions of unbiased transistor.



Biasing.





Currents in a Transistor.
I
E
= I
C
+ I
B
and I
C
I
E

I
CEO
= Collector current when base is open circuit
(Reverse saturation current of B C junction) A
I
CEO
= ( ) 1
CBO
I + = Collector current when Emitter is open circuited
(very less current due to junction barriers) A.
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DEPARTMENT OF ECE
2
I
EO
= Emitter base reverse (biased) saturation current when collector is
open circuited.
COMMON BASE CONFIGURATION: -


Current gain() = Collector current
/ emitter current =
C
E
I
I

Varies from 0.9 to 0.95.



COMMON EMITTER CONFIGURATION:

Current gain
( )


= =

C
B
I Collector Current
Base Current I

varies from 10 to 200 or 80.




COMMON COLLECTOR CONFIGURATION: -

Used for impedance
matching

CC Current gain =

E
B
I
I

Input Output

Similarly we can get ii) =
CBO
B
Ic I
I

iii)
C B CEO
I I I = +
iv) I
CEO
= (1+) I
CBO
v)
1 1
. I + . I
1 1
E CBO B
I

=


RELATION BETWEEN , &
a) We know I
E
= I
C
+ I
B
, But I
C
= I
E
.
I
E
= & I
E
+ I
B

I
E
- I
E
= I
B
or I
B
= I
E
(1 - )
Dividing both sides by ,
B E
c
C C
I I
I
I I

=

(1 - )
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DEPARTMENT OF ECE
3
Or ( )
1 1
1
1
or



= =

(b)
C E B
B B B
I I I
I I I

= +

OR 1
E
B
I
I

= +

Or 1
C E
C B
I I
I I


= +

OR 1
C E
C B
I I
I I
= +



Or
1
. 1 or =
1

= +
+

(c)
E
B
I
I

, Substituting I
B
= I
E
- I
C
.

,
E
E C
I
I I

=

by diving N & 0 on R.H.S, by I
E
.

/ 1
/ / 1
E E
E E C E
I I
I I I I

= =


Putting the value of = / + 1.

1
1
1

+

1 1
( ) 1
1
1
1
or

+
= = = +
+
+

1
( ) 1
1
or

= = +

INPUT & OUTPUT CHARACTERISTICS OF CB CONFIGURATION.






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DEPARTMENT OF ECE
4
I
E
(mA)

I
E
(mA) V
CB
= IV I
E

4 - V
CB
=0 5mA
3 - 4mA
2 - 3mA
1 - 2mA
1mA
0mA
0.5 0.6 V
EB
(VoHz) 1 2 3 4 5 V
CB
(volt)
Input characteristics. O/P Characteristics.

CE CONFIGURATION





C.C.CONFIGURATION:


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DEPARTMENT OF ECE
5
EARLY EFFECT OR BASE WIDTH MODULATION.
(IN CB CONFIGURATION)

As V
CC
made to increase the reverse bias, the space charge width between
collector and base tends to increase. This results in decrease of effective width of the
base. This dependence of base width on collector voltage is known as Early Effect. This
decrease of effective base width has three consequences.

(i) There is less chance of recombination in base region and Ic increases causing
to increase with increase in V
CB
.
(ii) The charge gradient is increased with in the base and current of minority
carries injected across emitter junction increases.
(iii) For extremely large Vcs, the effective base width becomes zero causing
voltage breaks down in the transistor. This phenomenon is called the Punch
through.
Drain
D
JFET CONSTRUCTION: G
D Gate
a) N Channel JFET
b) P Channel JFET D S
G G Source

S
S
D
BIASING OF JFET +

P -
N
S



DRAIN CHARACTERISTICS: -
OHMIC REGION:- Drain current increases With drain voltage



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DEPARTMENT OF ECE
6
PINCH OFF VOLTAGE(V
P
):
V
DS
for which maximumdrain current is there.
Further increase in V
DS
will not increase I
D
.

PINCH OFF REGION: -
Where drain current is saturated.

BREAK DOWN VOLTAGE: -
V
DS
where JFET breaks down
V
GS
cut off Where I
B
becomes zero, irrespective of V
DS
.
V
P
= V
GS
cut off

CHARACTERISTICS OF JFET
MUTUAL CONDUCTANCE OR TRANS CONDUCTANCE OF FET (g
m
)
D
m
GS
I
g
V

when V
DC
kept constant.
It is the ratio of small change in the drain current to the corresponding small
change in gate voltage when drain voltage is kept constant.
b) Drain resistance ( )
DS
d
D
V
I

, V
GS
kept constant
c) Amplification factor
DC
GS
V
V

, I
D
kept constant.
Q.1) In common base connection I
E
= 1mA, I
C
= 0.95 mA calculate value of I
B
.
(JNTU 2000)
I
B
= I
E
I
C
= 1 0.95 = 0.05mA.
Q2) In a CB configuration current amplification factor is 0.90 and emitter current is
1mA. Determine base current.
= 0.9, I
E
= 1mA
=
C
E
I
I
; I
C
= .I
E
= 0.9 x 1 = 0.9mA
I
B
= I
E
I
C
= 1 0.9 = 0.1mA.

Q3) A BJT has I
B
= 10 A, = .99 and I
CBO
= 1 A what is collector current.
Solution:
I
C
= I
B
+ (1+) I
CBO

B =
0.99 0.99
1 1 0.99 0.01
99

= = =
I
C
= 99 x 10 + (1 + 99)1
= 990 + 100 = 1090 A = 1.09 mA.






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DEPARTMENT OF ECE
7
Q4) A transistor operating in CB configuration has I
C
= 2.98mA, I
E
= 3.0mA and
I
co
= 0.01mA. What current will flow in collector circuit of that transistor when
connected in C
E
configuration and base current is 30A. (May,2006)
Given :
CB = I
C
= 2.98mA, I
E
= 3.0mA =
2.98
3.0
0.99 =
I
CO
= 0.01mA.
CE = I
B
= 30 A I
C
= ? I
C
= I
B


0.99 .99
99
1 1 0.99 0.01

= = = =


I
C
= I
B
+ ( + 1) Ico.
= 99 x 30 x 10
-6
+ (100)0.01 x 10
-3

= 2.97 x 10
-3
+ 1 x 10
-3
= 3.97mA


Q 5) Given an NPN transistor for which = 0.98, Ico = 2A I
EO
= 1.6A. A
CE

configuration is used and V
CC
= 122 and R
C
= 4.0K. What is the min. base current
required in order that transistor enter in to saturation region.

Given = 0.98, I
CO
= I
CB
= 2A,
I
EO
= I
CEO
= 1.6A.
V
CC
12 VC
E
= V
CC
= 12V,
R
L
= 4.0K I
B
= ? (In saturation)


Solution:-
Where Transistor is in saturation V
CE
= 0.2 (Assumed)
V
RL
= 12 0.2 = 11.8 Volts.

3
3
11.8
2.95 10 2.95
4 10
RL
c
L
V
I mA
R

= = = =

We know
Ic = I
B
+ (+1) I
CBO


0.98 .98
49
1 1 0.98 0.02

= = = =


2.95 x 10-3 = 49 IB + (49+1) 2 x 10-6
2950A = 49I
B
+100A
49I
B
= (2950 100)A = 2850 A
I
B
=
2850
49
58.16 A =

Q 6) When a reverse gate voltage is 12V, gate current is 1mA. Determine the
resistance between gate & source. (JNTU 2000)

3
12
12
1 10
V
R k
I

= = =

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DEPARTMENT OF ECE
8
Q 7) When reverse Gate voltage changes from 4.0 to 3.9V, the drain current changes
from 1.3 to 1.6 mA. Find the Trans conductance.

Solution:
Given V
GS
= 4.0 3.9 = 0.1 V
I
D
= 1.6 1.3 = 0.3 mA
g
m
= ?
3
3
0.3 10
3 10
0.1
D
m
GS
I
g mho
V

= = =

Q 8) A FET has a drain current of 4mA. If I
DSS
= 8mA and V
GS
off = -6V. Find values
of V
GS
and V
P
. (Nov. 2001)
Given I
DS
= 4 mA
I
DSS
= 8mA
V
GS off
= - 6V.


Solution: -
(i) V
P
= V
GS
off = -6V = 6V.
(ii)
2
1
GS
DS DSC
P
V
I I
V
| |
=
|
\


2
3 3
4 10 8 10 1
6
GS
V

| |
=
|
\



2
1 1
1 1
2 6 6
2
GS GS
V V
or
| |
= =
|
\

or
6
6
( )0.707 1 ;
( ) 1 0.707 0.293
6 0.293 1.758 .
G
S
GS
V
V
GS
or
or
V Volts
=
= =
= =


SATURATION DRAIN CURRENT (I
DSS
)


2
1
| |
=
|
\
GS
DS DSS
P
V
I I
V

2
DS DSS
m
P
I I
g
V
=
g
mo
is g
m
when V
GS
= 0


2
1
DSS GS
mo m mo
P P
I V
g andg g
V V
| |
= =
|
\



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DEPARTMENT OF ECE
9
COMPARISON OF BJT AND FET

1) FET is uni polar device current I
D
is due to majority (Where as BJT is
Bipolar) charge carries only.

2) FET is less noisy as there are no junctions(in conduction channel) FET

3) FET Input impedance is very high (100 m) (due to reverse bias)

4) FET is voltage controlled device, BJT is current controlled device

5) FETs are easy to fabricate

6) FET performance does not change much with temperature. FET has Ve
temp. Coefficient, BJT has +Ve temp. coefficient.

7) FET has higher switching speeds

8) FET is useful for small signal operation only

9) BJT is cheaper than FET.


MOS FET (Metal Oxide Semiconductor Field Effect Transistor)



N regions are highly doped
P regions are lightly doped.
Both N regions (D & S) are repeated by 1 mil. (10
-3
inch) or So.

A thin insulating layer is over the surface. This is Si 0
2
( a metal oxide) layer that
curves entire channel region given and a gate of metal (AP) is formed over the Si 0
2

layer.

Biasing: -
D Gate is kept positive w.r.t source. And
attracts electrons (or induces negative
Charge in the channel opposite to
G gate) This region acts like a capacitor
with Si0
2
layer acts as insulator between
two plates of the capacitor.
S

Due to this induced negative region a temporarily N Channel is created from
Drain to source or N channel is enhanced. Therefore it is called as Enhancement
MOSFET.

Gate leakage current is in the order of 10
-12
Amps. Hence input impedance is very
(10
10
to 10
15
ohms).
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DEPARTMENT OF ECE
10

Depletion Mode.


Volt Ampere characteristics of MOSFET (or) Output characteristics of MOS FET


Precautions of Handling MOS FET

- MOS FET may be damaged due to high voltage or static change. Thin Si0
2
layer get
damaged which is between Gate and Channel.

- Static voltage up to 300V may develop across a man if he uses high resistance soled
shoes.

- MOS FET are protected by shorting ring that is rapped around all the four terminals.

- Technician handling the MOS FET are required to use shorting strap to discharge
static charge.

Q) Explain the working principle of UJT with its characteristics (May 06, 07).
Unit Junction Transistor Symbol Equivalent Circuit

It has only one PN junction. Therefore it is called as Unit Junction Transistor.
- Arrow indicates direction of convectional circuit
- Inter Base resistance (R
BB
) = R
B1
+ R
B2
.
N channel exists.
Gate is kept negative wrt source.
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DEPARTMENT OF ECE
11
- Intrinsic stand off ratio
1 2
=
BI
B B
R
R R

+
and ranges from 0.56 to .75.
- Voltage drop across
1
V
B BB
R = which reverse biases PN junction.



Working Principle

- UJT remains cut off till emitter voltage is greater than V
BB.

-
- When V
E
> V
BB
, large number of holes are injected into the N region.
-
- These holes are repelled by terminal B
2
(being +Ve biased) and collected by
B
1
.
-
- Accumulation of holes in E to B
1
region reduced the resistance in this section
leading to increase in current I
E
.
-
- UJT has a stable firing voltage V
P
= V
BB
+ V
d
= voltage across R
B1
+ V
d
.
- (R
B1
) / (R
B1
+ R
B2
) . V
BB
.













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DEPARTMENT OF ECE
12
UJT RELAXATION OSCILLATOR.




Ve Saw tooth wave


VV

0 T1 T2 T3 T4

- UJT is used to generate
saw tooth waveform V
BB

- R
1
and R
2
are external
resistors(not R
B1
& R
B2
)
- By changing C
E
and R
E

we can change the frequency VB
2

of oscillation.
- 1
E E
t
R C
C BB
V V e

| |
= |
|
\

- 1
E E
t
R C
P BB BB
V V V e
| |
= = |
|
\
VB
1

or 1
t
RECE
n e

| |
=
|
\
, taking log e both sides t = R
E
C
E
log
e
(1/1-n)
or t = 2.303 R
E
C
E
log10 (1/1-n)
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DEPARTMENT OF ECE
13
- Frequency of Oscillation
10
1 1
1
2.3 log
1
E E
f
t
R C
n
= =

Q1) A silicon UJT has an inter base resistance R
BB
= 10k and R
B1
= 6k with
I
E
= 0. If V
BB
= 20V and V
E
< V
P
find UJT current (c) and V
P
(Dec.2003)

R
BB
= 10K; T current (c) =
20
2
10
BB
BB
V
mA
R K
= =
V
P
= V
RB1
+ V
d
= 6K x 2mA + 0.7V = 12.7Volts


Q2) If = 0.8 and V
BB
= 15V and V
d
= 0.7V, find the value of V
P
. (June 2005)

Solution:
V
P
= V
BB
+ V
d
= 0.8 x 15 + 0.7 = 12.7 Volts

Q 3) A UJT has a firing potential of 20V. It is connected across the capacitor of a
series RC circuit with R = 100K and C = 1000 Pf supplied by a source 40V DC.
Calculate the time period of saw tooth wave form generated.

Solution: -
V
C
= V
BB
1
C
t
R
e

| |

|
\

V
C
= 20V, V
BB
= 40V, R = 100K, C = 1000Pf.

5 12
10 1000 10
4
1
20 40 1 1
2 10
t
t
e or e

| |

= =
|
|
\

Or
4
10
1
1
2
t
e

= or
4
10
1 1 2 1 2
t
e

= =

4 4
10 log log 1 2 10 0.693
e
e
t e or t = =

6
4 4
0.693 .693 10
sec 69.3 sec.
10 10
t

= = =

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DEPARTMENT OF ECE
14
SILICON CONTROLLED RECTIFIER:
Construction Symbol
1) Iit is a four layer three Anode (A) A
Terminal device
P1
2) Leakage current in silicon is
very small compared Germanium N1

P2 G

N2 C


Cathode


a)cut off region
b)negative Resistance region

Biasing of SCR.


CHARACTERISTICS OF SCR.

3) SCR acts as a switch when it is forward biased.
4) When gate is open i.e., I
G
= 0, and anode voltage is applied junctions P
1
N
1
and
P
2
N
2
are forward biased where N
1
P
2
is reverse biased. Only small reverse
current flows.

5) If we increase anode voltage further, at one stage anode current increases
suddenly and voltage across the SCR falls to holding voltage VH.

6) Once SCR fires (conducts), it will remain in conduction till the current through
the device is reduced less than IH, adding current by reducing applied voltage (to
less than holding voltage) close to zero.
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DEPARTMENT OF ECE
15
7) The firing angle can be varied by varying the Gate voltage. With very large
positive (gate current break over may occur at very low voltage and SCR works as
if it is a normal PN diode.


TWO TRANSISTOR VERSION OF SCR.


-T
1
is PNP and T
2
is NPN.
I
b1
= I
A
I
e1
= I
A
-
1
I
A
= I
A
(1 -
1
) - (1)
I
b1
= I
c2
and I
c2
=
2
I
k
- (2)
I
b1
= I
A
(1 -
1
) =
2
I
K
- (3)

We know I
k
= I
A
+ Ig. ( I
A
= I
C1
+ I
b1
) - (4)
Putting the value of I
k
from eqn. (4) in eqn. (3)
I
A
(1 -
1
) -
2
(I
A
+ Ig)
I
A
(1 -
1
) =
2
(I
A
+ Ig)
I
A
(1 -
1
-
2
) =
2
Ig. Or
( )
2
1 2
1
g
A
I
I


| |
=
|
|
+
\
-(5)
Equation 5 indicates that if(1 + 2) = 1, I
A
=

- SCR is also called as Thirster
- Latching current (I
L
) the min. current required to fire the device
- Holding current (I
H
) min. current to keep the SCR conductivity
- Voltage safety factor
2 .
f
PIV
V
RMS of operating voltage
=
Value of V
f
is 2 to 2.7.


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DEPARTMENT OF ECE
16
SCR Half wave Rectifier.



SCR does not conduct during negative half cycle (like normal PN diode)
- Firing angle depends on gate voltage
- Conduction angle is ( - )

Average DC output
0
1
sin .
2
av m
V V wt dwt

[ ]
[ ]
( )
( )
0
1
cos
2
1
cos cos
2
1
1 cos
2
1 cos
2
m
m
m
m
V wt
V
V
V

=
=
= (

= +

RMS VOLTAGE: V
RMS
is given by ( )
1/ 2
1
sin 2
2
m
RMS
V
V

(
= +
(






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DEPARTMENT OF ECE
17
SCR FULL WAVE RECTIFIER





( ) 1 cos
DC
Vm
V

= +

Q) An SCR FWR is connected to 250V. 50 Hz mains to supply ac voltage to resistive
load of 10 for firing angle of 90. Find DC output voltage and load current.
(May, 2000)

Solution: -
Given V
RMS
= 230V, R
L
= 10, = 90
V
DC
= ? I
L
= ?

( )
max
2
1
RMS
m
DC
V
V
V
V Cos

=
= +

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DEPARTMENT OF ECE
18
Or V
max
= V
RMS
2 = 2502 = 353.6 volts

( )
353.6
1 cos90 112.6
112.6
11.26
10
DC
L
L
volts
V
I Amps
R

+ =
= = =


Q 2) A sinusoidal voltage V = 200 sin 314 t is applied to an SCR whose forward break
down voltage is 150V. Determine the time during which SCR remain off.


(Dec. 2001)
Solution: - Vo
Given V
1
= 150V, V
m
= 200V
W = 314 = ? t = ? Vm
V1
1
sin
m
V V = or
1
150 3
sin
200 4
m
V
V
= = =
1
sin 3/ 4 48.6

= = t
T = 1/f f = ? w = 2f = 314 or f = 314/2 = 50Hz.
T= 1/50 = 0.02sec = 20 m. sec.
t =
48.6
360 360
20 2.7 sec T m

= =

Q 3) A half wave rectifier employing SCR is adjusted to have a gate current of 1mA
and its forward breakdown voltage is 150V. If a sinusoidal voltage of 400V peak is
applied, determine.

i) Firing angle (ii) Average output voltage
iii) Average current for a load resistance of 200
iv) Power output. (Nov. 2002)

Given
V
1
= 150V, V
m
= 400V, = ? V
DC
= ? I
DC
= ? P
DC
= ? R
L
= 200

Solution: -


V
1
= V
m
sin, or Sin = V
1
/ V
m
= 150/400 = 3/8 = 0.375.
= Sin
-1
0.375 = 22.
( )
400 400
1 cos (1 cos 22 ) (1.927) 122.6
2 2 2
m
DC
V
V volts

= + = + = =

122.6
0.613 .
200
. 122.6 0.613 75.15 .
DC
DC
L
DC DC DC
V
I Amps
R
P V I Watts
= = =
= = =

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DEPARTMENT OF ECE
19

Color Construction Typical FWD Voltage (V)
Amber Al In Ga P 2.1
Blue Ga N 5.0
Green Ga P 2.2
Orange Ga As P 2.0
Red Ga As P 1.8
White Ga N 4.1
Yellow Al In Ga P 2.1
_________________________________________________________________

- Reverse break down voltage of LED is very less 3 to 5 volts
- LEDs are used for displays, including seven-segment display.


PHOTO DIODES:
Biasing Symbol

P N P N
A K


- Photo diode is always reverse biased

- When light falls on reverse biased junction, electrons are liberated and an EMF is
available at the terminals, which leads to current through external load.

W = hf Joules

1 Lumen = 1.496 x 10
-10
watts

- Current will be zero only for a

- positive voltage V
T
.

- Current luminous flux

application signal detector,
alarm systems.

COMPARISON OF CB, CE, CC CONFIGURATIONS:
Q) Summarize salient features of characteristics of BJT operating in CE, CB, CC
configurations. (August 07)
(Auth: EDC by Salivahanam : P 112)
S. No. Property CB CE CC
1 Input Resistance Low (100) Moderate(750) High (750k)
2 Output resistance High (450k) Moderate (45k) Low (75)
3 Current gain 1 High High
4 Voltage gain 150 500 < 1
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DEPARTMENT OF ECE
20
5 Phase shift between
input and output
voltages
0 or 360 180 0 or 360
6 Applications High frequency
circuits
AF circuits Impedance
matching.
Q 1b) Calculate the values of I
E
,
dc
and
dc
for a transistor with Ic = 13A, I
B
=200mA,
I
CBO
= 6A. Also determine the new level of Ic which will result in reducing I
B
=
100mA. (August 07)

Solution: -
Given Ic = 13 A find Ic, when I
B
= 100 mA
I
B
= 200mA PART I
I
CBO
= 6A I
E
= ?
dc
= ?
dc
= ?
PART I
When I
B
= 200mA I
c
cannot be 13 A.
as Ic = X. I
B
.
Assume Ic = 13 Amperes
Then
dc
=
C
B
I
I
= 13/200 x 10
3
= 65
I
E
= I
C
+ I
B
or I
E
= 13+0.2 Amperes.= 13.2 Amperes
We can also use the formulae
1 1
,
1 1
E CBO
I I IB

= +


Which will also result I
c
13.2 Amperes.

13
0.985
13.2
C
dc
E
I
I
= = =
PART II
I
C
=
dc.
I
B
= 65 x 200 x 10
-3
= 6.5 Amperes

5. a) A transistor operating in CB configuration has I
c
= 2.98 mA in
I
E
- =3.00mA and Ico = 0.01mA. What current will flow in the collector
circuit of the transistor when connected in CE configuration with base
current of 30A (May 2006)

Solution: To find
Given I
c
= 2.98 mA If I
B
= 30 A, I
c
= ?
I
E
= 3 mA
I
co
= 0.01 mA
I
c
= I
B
+ (+1) ICO and ,
1
C
E
I
I

= =

=
2.98
3.0
0.99 =
0.99
1 0.99
99
1

= = =

I
c
99 x 30 x 10
-6
+ (99+1) x 0.01 x 10
-3
= 3970A = 3.97 mA.


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DEPARTMENT OF ECE
21

5(b) The reverse saturation current in a transistor is 8A. If the transistor
common base current gain is 0.979, calculate the collector and emitter
current for 40A base current.
(May 2006)


Solution: To find
Given I
CO
= I
CBO
= 8A I
C
& I
E
for I
B
= 40A
= 0.979

1 1 1 1
; 47.62
1 1 1 1 0.979
E CBO B
I I I
d
= + = =



6 6 6
47.62 8 10 47.62 40 10 2285 10 2285
E
I A

= + = =
Ic = I
E
I
B
= 2285 40 = 2245 A.

Q 6b) Given an NPN transistor for which = 0.98, I
CO
= 2A and I
EO
= 1.6A. A
common emitter connection is used and V
CC
= 12V and R
L
= 4.0K. what is the
minimum base current required in order that transistor enter into saturation region.
(Nov. 05)
Solution:
Given d = 0.98 To Find
I
CO
= 2A I
B
for I
csat

I
EO
= 1.6A
V
CC
= 12V
R
L
= 4.0 K.

When the transistor is in saturation Ic = I
csat
and V
CE
of ideal transistor = 0
volts.
12
3
4000
cc
csat
L
V
I mA
R
= = =
0.98
49
1 1 0.98
B
Ic
I and

= = = =


3
3 10
0.061
49
B
I mA

= = Or 61A.


Q 9b) The current gain of a transistor in CE circuit is 49. Calculate CE gain and find
base current where the emitter current in 3mA.

Solution

Given = 49 To find = ?
I
B
for I
E
= 3mA.
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DEPARTMENT OF ECE
22
49
0.98
1 1 49
d

= = =
+ +

I
E
= (+1) I
B
or
3
3 10
60
1 1 49
E
B
I
I A

= = =
+ +


Q 1b) In the circuit shown if Ic = 2mA and V
CE
= 3V. Calculate R
1
and R
3
.
May 07, Aug. 06, 07)

Solution: -

I
C
= 2mA and =100

3
2 10
200
100
B
Ic
I A

= = =
I
E
= I
C
+I
B
= 2mA+20A
= 2020A IB
V
E
= I
E
.R
4
= 2020 x 10
-6
x 500
V
E
= 1.01 volts
V
B
= V
E
+ V
BE
= 1.01 + 0.6 = 1.61 volts
V
B
= V
R2
= 1.61 volts
3
2
1.61
0.161 161
10 10
B
V
I mA A
R

= = =

V
R1
= V
CC
V
R2
= 15 - 1.61 = 13.39 volts
( )
1
1
6 6
13.39 13.39
73.97
161 20 10 181 10
R
B
V
R k
I I

= = = =
+ +

R
1
= 7397 k
V
R3
= V
CC
V
CE
V
E
= 15 3 1.01 = 10.99 volts
3
3 3
3
10.99
5.49
2 10
5.49 .
C
VR
R k
I
R k

= = =

=


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DEPARTMENT OF ECE
23
Q 3) For the JFET shown in the circuit with the voltage divider bias as shown below,
calculate V
G
, V
S
, V
D
and V
D
s if VGS = - 2V (Sep. 2006)
Solution:

Rd 500
( )
. 2
1 2
15 4 15
3.75
12 4 4
DD
G
V R K
V V
R R k

= = = =
+ +
12K R
1
Id
Since gate current is negligible voltage drop G S
Across RG = 0 4K R
2
R
3
1K
V
GS
= V
G
I
DRS
.
- 2V = 3.75 I
DRS

I
dRs
= 3.75 + 2 = 5.75V = Vs.
Id = 5.75/1R = 5.75mA
Voltage drop across RL = I
DRL
.


+15V.
500
= 5.75 x 10-3 x 500 = 2.875V R
G
I
D

V
DS
= V
DD
I
DRL
I
DRS

= 15 2.875 5.75 = 6.375 volts Vds Vd
V
D
= V
DD
I
DRL
= 15 2.875 = 12.125V 3.75V V
G
+ 1K Vs

COMPARISON OF MOS FET WITH JFET

1) In JFET, the transverse electric field across the reverse biased P N junction
controls the conductivity of he channel. In FET Transverse electric field is
induced across the insulating layer.
2) Input impedance of MOS FET is much higher (10
10
to 10
15
) compared to
that of JFET (10
8
) because gate is insulated from channel.
3) The output characteristics of JFET are flatter than that of MOS FET because
drain resistance of JFET is much higher than MOS FET.
4) JFET is operated in depletion mode only where as MOSFET can be operated
in depletion and enhancement mode.
5) MOSFET are easier to fabricate than JFET
6) MOSFETs are easily get damaged due to static change
7) In MOSFET source and drain can be interchanged
8) CMOSFETs discipates very low power
9) MOS FETs are widely used in VLSI.


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