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Experiment No. 1 - Electronics

1. The document describes procedures to characterize the electrical properties of silicon and germanium diodes, including measuring forward and reverse bias characteristics, calculating saturation current, and determining DC and AC resistance. Tests are performed using a DMM, DC power supply, and various resistor values. 2. Key results are plotted on graphs and tables, showing the forward bias voltage-current relationship and differences between silicon and germanium diode characteristics, such as higher turn-on voltage for silicon. The saturation current and resistances are also calculated and compared between the two materials. 3. In conclusion, the germanium curve has a lower turn-on voltage as expected. The saturation current is higher for germanium,

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Rhea Daluddung Sanchez
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122 views6 pages

Experiment No. 1 - Electronics

1. The document describes procedures to characterize the electrical properties of silicon and germanium diodes, including measuring forward and reverse bias characteristics, calculating saturation current, and determining DC and AC resistance. Tests are performed using a DMM, DC power supply, and various resistor values. 2. Key results are plotted on graphs and tables, showing the forward bias voltage-current relationship and differences between silicon and germanium diode characteristics, such as higher turn-on voltage for silicon. The saturation current and resistances are also calculated and compared between the two materials. 3. In conclusion, the germanium curve has a lower turn-on voltage as expected. The saturation current is higher for germanium,

Uploaded by

Rhea Daluddung Sanchez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 6

1

OBJECTIVE
To calculate, compare, draw, and measure the characteristics of a silicon and germanium diode.

TOOLS AND EQUIPMENTS REQUIRED
DMM (Digital Multi Meter)
DC Power Supply
1k x1
1M x1
Silicon Diode x1
Germanium Diode x1


PROCEDURE

PART 1. Diode Test

a) Diode Testing Scale
The diode-testing scale of a DMM can be used to determine the operating condition of a diode.
With one polarity, the DMM should provide offset voltage of the diode, while the reverse connection
should result is an OL response to support the open-circuit approximation.

Using the connections shown in fig. 1.2, the constant-current source of about 2 mA internal to the
meter will forward bias the junction, and a voltage about 0.7 V (700mV) will be obtained for silicon and
0.3 V (300mV) for germanium. If the leads are reserved, an OL indication will be obtained.


If a low reading (less than 1 V) is obtained in both directions, the junction is shorted. If an OL
indication is obtained in both direction, junction is open.

Perform the tests of table 1.1 for silicon and germanium diodes.

Table 1.1

Test Si Ge
Forward
Reverse


2

I
D
= (mA)
I
D
= (mA)
I
D
= (mA)
I
D
= (mA)
PART 2. Forward-bias Diode Characteristics

In this part of the experiment we will obtain sufficient data to plot the forward-bias characteristics of
the silicon and germanium diodes on fig. 1.4

a) Construct the network of fig.1.3 with the supply (E) set at 0 V. Record the measured value of
the resistor.


b) Increase the supply voltage E until V
R
(not E) reads 0.1 V. Then measure V
D
and insert its voltage
in Table 1.3. Calculate the value of the corresponding current ID using the equation shown in
Table 1.3

TABLE 1.3
V
D
versus I
D
for silicon diode
V
R
(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
D
(V)
_V
R
_
R
meas



V
R
(V) 0.9 1 2 3 4 5
V
D
(V)
_V
R
_
R
meas



c) Replace the silicon diode by a germanium diode and complete table 1.4

TABLE 1.4
V
D
versus I
D
for germanium diode
V
R
(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
D
(V)
_V
R
_
R
meas



V
R
(V) 0.9 1 2 3 4 5
V
D
(V)
_V
R
_
R
meas


3

d) On fig 1.4, plot I
D
versus V
D
for the silicon and germanium diodes. Complete the curves by
extending the lower region of each curve to the intersection of axis at I
D
= 0 mA and V
D
= 0 V.
Label each curve and clearly indicate data points.


























Figure 1.4

PART 3. Reverse Bias

a) In fig. 1.5 a reverse-bias condition has been established. Since the reverse saturation current
will be relatively small, a large resistance of 1 M is required if the voltage across R is to be of
measureable amplitude. Construct the circuit of fig. 1.5 and record the measured value of R on
the diagram.



b) Measure the voltage V
R
. Calculate the reverse saturation current from I
S
= V
R
/ (R
meas
//R
m
). The
internal resistance R
m
of the DMM is included because of the large magnitude of the resistance
4

R. Your Instructor will provide the internal resistance of DMM for your calculations. If
unavailable, use a typical value of 10 M.

R
m
= _____________________
V
R
= _____________________
I
S
= _____________________


c) Repeat Part 3 (b) for the germanium diode.
V
R
= _____________________
I
S
= _____________________


d) Determine the DC resistance levels for the silicon diodes using the equation
R
DC



R
DC
(Calculated) (Si) = ____________________
R
DC
(Calculated) (Ge) = ___________________
PART 4. DC Resistance

a) Using the Si curve of fig 1.5, determine the diode voltage at the diode current levels indicated in
table 1.5. Then determine the DC resistance at each current level. Show all calculations.

I
D
(mA) V
D
R
DC

0.2
1
5
10

b) Repeat part 4 (a) for germanium and complete table 1.6

I
D
(mA) V
D
R
DC

0.2
1
5
10


5

PART 5. AC Resistance

a) Using the equation r
D

, determine the AC resistance of silicon diode at I


D
= 9mA using the
curve at figure 1.4. Show your all work.




r
D
(calculated) = __________________________




b) Determine the AC resistance at I
D
= 9mA using the equation r
D

for the silicon diode.


Show your all work.



r
D
(calculated) = __________________________


Compare the results at parts 5(a) and 5(b)









c) Repeat part 5(a) for I
D
= 2mA for the silicon diode.


r
D
(calculated) = __________________________





d) Repeat part 5(a) for I
D
= 2mA for the germanium diode.



r
D
(calculated) = __________________________



6

CONCLUSION
Write in 2-3 sentences at maximum.
Compare the two curves on fig 1.4. How do the two curves differ? What are their similarities?








Compare I
S
levels of silicon and germanium diodes. Are the results are as expected?










Does DC resistance change as the current increase? How? Why?

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