CS20 12io1

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2002 IXYS All rights reserved

1 - 3
CS 20
Symbol Test Conditions Maximum Ratings
I
T(RMS)
T
VJ
= T
VJM
30 A
I
T(AV)M
T
case
= 85C; 180 sine 19 A
I
TSM
T
VJ
= 45C; t = 10 ms (50 Hz), sine 200 A
V
R
= 0 V t = 8.3 ms (60 Hz), sine 215 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 180 A
V
R
= 0 V t = 8.3 ms (60 Hz), sine 195 A
It T
VJ
= 45C t = 10 ms (50 Hz), sine 200 A
2
s
V
R
= 0 V t = 8.3 ms (60 Hz), sine 195 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 162 A
2
s
V
R
= 0 V t = 8.3 ms (60 Hz), sine 158 A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 40 A 150 A/ms
f = 50 Hz, t
P
=200 ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A non repetitive, I
T
= I
T(AV)M
500 A/ms
di
G
/dt = 0.3 A/ms
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000 V/ms
R
GK
= ; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
= 30 ms 10 W
I
T
= I
T(AV)M
t
P
= 300 ms 5 W
P
GAV
0.5 W
V
RGM
10 V
T
VJ
-40...+125 C
T
VJM
125 C
T
stg
-40...+125 C
M
d
Mounting torque M3 0.8...1.2 Nm
Weight 6 g
Features
G
Thyristor for line frequency
G
International standard package
JEDEC TO-247
G
Planar passivated chip
G
Long-term stability of blocking
currents and voltages
G
Epoxy meets UL 94V-0
Applications
G
Motor control
G
Power converter
G
AC power controller
G
Switch-mode and resonant mode
power supplies
G
Light and temperature control
Advantages
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
Space and weight savings
G
Simple mounting
G
Improved temperature and power
cycling
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Phase Control Thyristor V
RRM
= 1200-1600 V
I
T(RMS)
= 30 A
I
T(AV)M
= 19 A
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V
1200 1200 CS 20-12io1
1400 1400 CS 20-14io1
1600 1600 CS 20-16io1
A C
G
A
G
C
TO-247 AD
C = Cathode, A = Anode, G = Gate
TAB = Anode
(TAB)
2
3
5
2002 IXYS All rights reserved
2 - 3
CS 20
Symbol Test Conditions Characteristic Values
I
R
, I
D
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
2 mA
V
T
I
T
= 25 A; T
VJ
= 25C 2.1 V
V
T0
For power-loss calculations only (T
VJ
= 125C) 1.1 V
r
T
40 mW
V
GT
V
D
= 6 V; T
VJ
= 25C 1.0 V
T
VJ
= -40C 1.2 V
I
GT
V
D
= 6 V; T
VJ
= 25C 65 mA
T
VJ
= -40C 80 mA
T
VJ
= 125C 50 mA
V
GD
T
VJ
= T
VJM
; V
D
= 2/3 V
DRM
0.2 V
I
GD
5 mA
I
L
T
VJ
= 25C; t
P
= 10 ms 150 mA
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
= 100 mA
t
gd
T
VJ
= 25C; V
D
= 1/2 V
DRM
2 ms
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
R
thJC
DC current 0.62 K/W
R
thJH
DC current 0.82 K/W
a Max. acceleration, 50 Hz 50 m/s
2
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
10 100 1000
1
10
100
1000
s
t
gd
I
G
1 10 100 1000 10000
0.1
1
10
I
G
V
G
mA
V
4
2
1
5
6
mA
typ. Limit
3
T
VJ
= 25C
I
GD
, T
VJ
=125C
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1: I
GT
, T
VJ
= 125C
2: I
GT
, T
VJ
= 25C
3: I
GT
, T
VJ
= -40C
TO-247 AD and ISOPLUS 247
TM
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D* 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
* ISOPLUS 247
TM
without hole
2002 IXYS All rights reserved
3 - 3
CS 20
0 5 10 15 20 25
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150
0.001 0.01 0.1 1
0
50
100
150
200
0 1 2 3
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100
0.0
0.5
1.0
I
TSM
I
T
A
V
T
t
s
P
T
W
I
T(AV)M
A
T
amb
C
t
s
Z
thJC
K/W
V
A
2 3 4 5 6 7 8 9 1 10
100
1000
I
2
t
t
A
2
s
I
T(AV)M
T
case
A
0 20 40 60 80 100 120
0
5
10
15
20
25
30
35
C
ms
Fig. 8 Transient thermal impedance junction to case
Fig. 3 Forward characteristics Fig. 4 Surge overload current
I
TSM
: crest value, t: duration
Fig. 5 I
2
t versus time (1-10 ms)
Fig. 6 Power dissipation versus forward current and ambient temperature Fig. 7 Max. forward current at case
temperature
T
VJ
= 125C
T
VJ
= 45C
50Hz, 80%V
RRM
T
VJ
= 125C
DC
180sin
120
60
30
R
thHA
:
1 K/W
2 K/W
3 K/W
5 K/W
7.5 K/W
15 K/W
T
VJ
= 45C
DC
180sin
120
60
30
30
60
120
180
DC
V
R
= 0 V
150
200
300
T
VJ
= 25C
T
VJ
= 125C
R
thJC
for various conduction angles d:
d R
thJC
(K/W)
DC 0.62
180 0.71
120 0.748
60 0.793
30 0.817
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.206 0.013
2 0.362 0.118
3 0.052 1.488
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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