T12M5T-B SERIES

MAXIMUM RATINGS (Tj= 25 unless otherwise noticed)

Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TRIACS
12 AMPERES RMS
600 VOLTS
Rating Symbol Value Unit
Peak Repetitive Off State Voltage (1) (TJ= -40 to 110, Sine Wave, 50 to 60 Hz; Gate Open)

VDRM,
VRRM
600 Volts
On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz, TC =70 ) IT(RMS) 12 Amp
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ= 25) ITSM 90 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 33 A s
Peak Gate Power (Tc = 70 , Tp 1.0 us) PGM 16 Watt
Average Gate Power (Tc = 70 , t = 8.3 ms) PG(AV) 0.35 Watt
Operating Junction Temperature Range TJ -40 to +110
Storage Temperature Range Tstg -40 to +150
2 2
Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV. 3, Mar-2010,KTXC23
T12M5T600B

SEMICONDUCTOR
LITE-ON
FEATURES
Sensitive Gate Allows Triggering by
Microcontrollers and other
Blocking Voltage to 600 Volts
High Surge Current Capability - 90 Amperes
Glass Passivated Junctions for Reliability and
Uniformity
Maximum Values of IGT, VGT and IH Specified for
Ease of Design
Operational in Three Quadrants: Q1, Q2, and Q3
Pb Free Package
MECHANICAL DATA
Case: Molded plastic
Weight: 0.07 ounces, 2.0 grams
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
PIN ASSIGNMENT
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.

MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67 9.65
2.54 3.43
6.86 5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.67 0.40
3.53 4.09
3.56 4.83
1.14 1.40
2.92 2.03
O 1.37 1.17
H H
A
B
C
K
J
I
G
F
E
D
N
M
L
PIN
1 3 2
O
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
RthJC
RthJA
2.2
62.5
/W
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds TL 260
Peak Reptitive Forward or Reverse Blocking Current TJ=25
(VD=Rated VDRM, VRRM; Gate Open) TJ=110
IDRM
IRRM
----
----
----
----
10
2.0
uA
mA
Peak On-State Voltage
(ITM= 17A Peak @Tp 2.0 ms, Duty Cycle 2%)
VTM ---- ---- 1.85 Volts
Gate Trigger Current (VD = 12V; RL = 100 Ohms)
IGT1
IGT2
IGT3
----
----
----
1.5
2.5
2.7
5.0
5.0
5.0
mA
Gate Trigger Voltage (VD = 12 V; RL =100 Ohms)
VGT1
VGT2
VGT3
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
Volts
Holding Current (VD = 12 V, Initiating Current = 200 mA,
Gate Open)
I H ---- 2.5 10 mA
Latching Current (VD = 12 V, IG = 5 mA)
I L1
I L2
I L3
----
----
----
3.0
5.0
3.0
15
20
15
mA
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise noted; Electrical apply in both directions)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5A,
Commutating dv/dt = 10 V/us, Gate Open, TJ = 110, f = 500 Hz,
Cs = 0.01 uF, RS = 15 Ohms)
di/dt(c) 8.0 10 ---- A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 67% Rated VDRM, Exponential Waveform, RGK=1K Ohms,
TJ=110 )
dv/dt 15 40 ---- V/us
Repetitive Critical Reat of Rise of On-State Current
(IPK = 50A; PW = 40 usec; diG/dt = 1A/usec;Igt = 100mA; f= 60Hz)
di/dt ---- ---- 10 A/us
RATING AND CHARACTERISTIC CURVES
T12M5T-B SERIES
Quadrant Definitions
All polarities are referenced to MT1
Whith in -phase signal (using standard AC lines) quadrants I and III are used
RATING AND CHARACTERISTIC CURVES
T12M5T-B SERIES
RATING AND CHARACTERISTIC CURVES
T12M5T-B SERIES
-40 -25 -10 5 20 35 50 65 80 95 110
0.1
1
10
100

Figure 1. Typical Gate Trigger Current
versus Junction Temperature
I
G
T
,

G
A
T
E

T
R
I
G
G
E
R

C
U
R
R
E
N
T

(
m
A
)
TJ, JUNCTION TEMPERATURE (
o
C)
-40 -25 -10 5 20 35 50 65 80 95 110
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90

Figure 2.Typical Gate Trigger Voltage
versus Junction Temperature
V
G
T
,

G
A
T
E

T
R
I
G
G
E
R

V
O
L
T
A
G
E

(
V
O
L
T
S
)
TJ, UNCTION TEMPERATURE (
o
C)
-40 -25 -10 5 20 35 50 65 80 95 110
0.1
1
10
100

Figure 3. Typical Latching Current
versus Junction Temperature
I
L
,

L
A
T
C
H
I
N
G

C
U
R
R
E
N
T

(
m
A
)
TJ, JUNCTION TEMPERATURE (
o
C)
-40 -25 -10 5 20 35 50 65 80 95 110
0.1
1
10
100

Figure 4. Typical Holding Current
versus Junction Temperature
I
H
,

H
O
L
D
I
N
G

C
U
R
R
E
N
T

(
m
A
)
TJ, JUNCTION TEMPERATURE (
o
C)
0 2 4 6 8 10 12
60
70
80
90
100
110

Figure 5. Typical RMS Current Derating
T
C
,

C
A
S
E

T
E
M
P
E
R
A
T
U
R
E
(
o
C
)
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0 2 4 6 8 10 12
0
5
10
15
20
25

Figure 6. On-State Power Dissipation
P
(
A
V
)
,

A
V
E
R
A
G
E

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

(
W
A
T
T
S
)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Q1
Q2
Q3
Q1
Q2
Q3
Q1
Q2
Q3
MT2 Positive
MT2 Negative
DC
180
120
90
60
30
DC
180
90
30,60
RATING AND CHARACTERISTIC CURVES
T12M5T-B SERIES
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.1
1
10
100

Figure 7. Typical On-State Characteristics
I
T
,

I
N
S
T
A
N
T
A
N
E
O
U
S

O
N
-
S
T
A
T
E

C
U
R
R
E
N
T

(
A
M
P
S
)
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.1 1 10 100 1000 10000
0.01
0.1
1

Figure 8. Typical Thermal Response
r
(
t
)
,

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

R
E
S
I
S
T
A
N
C
E

(
N
O
R
M
A
L
I
Z
E
D
)
t, TIME (ms)
Typical @ TJ = 25
Maximum @ TJ = 110
Maximum @ TJ = 25
Specifications mentioned in this publication are subject to change without notice.