This document provides an overview of multi-chip module (MCM) technologies, including MCM-Ceramic, MCM-Laminated, and MCM-Deposited. It focuses on the prototyping results of MCM-Deposited (MCM-D) technology, which deposits dielectric and conductor materials in thin films. MCM-D allows for the highest connection density and is planned for use in the innermost layer of the ATLAS Pixel detector module. The MCM-D concept for this module integrates signal lines and power connections within the module using bump bonding and flip chip assembly with the sensor substrate. Key requirements for the thin film technique are a maximum process temperature of 300°
This document provides an overview of multi-chip module (MCM) technologies, including MCM-Ceramic, MCM-Laminated, and MCM-Deposited. It focuses on the prototyping results of MCM-Deposited (MCM-D) technology, which deposits dielectric and conductor materials in thin films. MCM-D allows for the highest connection density and is planned for use in the innermost layer of the ATLAS Pixel detector module. The MCM-D concept for this module integrates signal lines and power connections within the module using bump bonding and flip chip assembly with the sensor substrate. Key requirements for the thin film technique are a maximum process temperature of 300°
This document provides an overview of multi-chip module (MCM) technologies, including MCM-Ceramic, MCM-Laminated, and MCM-Deposited. It focuses on the prototyping results of MCM-Deposited (MCM-D) technology, which deposits dielectric and conductor materials in thin films. MCM-D allows for the highest connection density and is planned for use in the innermost layer of the ATLAS Pixel detector module. The MCM-D concept for this module integrates signal lines and power connections within the module using bump bonding and flip chip assembly with the sensor substrate. Key requirements for the thin film technique are a maximum process temperature of 300°
This document provides an overview of multi-chip module (MCM) technologies, including MCM-Ceramic, MCM-Laminated, and MCM-Deposited. It focuses on the prototyping results of MCM-Deposited (MCM-D) technology, which deposits dielectric and conductor materials in thin films. MCM-D allows for the highest connection density and is planned for use in the innermost layer of the ATLAS Pixel detector module. The MCM-D concept for this module integrates signal lines and power connections within the module using bump bonding and flip chip assembly with the sensor substrate. Key requirements for the thin film technique are a maximum process temperature of 300°
Nuclear Instruments and Methods in Physics Research A 473 (2001) 102106
Multi Chip Modules technologies
P. Gerlach*, C. Linder, K.-H. Becks Fachbereich Physik, Bergische Universit . aat Wuppertal, Gaussstrasse 20, D-42097 Wuppertal, Germany Abstract In the past few years, impressive progresses in electronic devices and their packaging have been achieved. High energy physicists benet from this, being able to minimise the amount of material in their Vertex-Detectors. Although the environment of Vertex-Detectors is much more controlled and stabilised than in the industry- or end-user-applications, the requirements of material-budget and device complexity are higher. This paper tries to give a short overview of the existing Multi Chip Module technologies used in Vertex-Detectors and focuses on the prototyping results of an upcoming Multi Chip Module technology, called Multi Chip Module- Deposited (MCM-D), as it is planned to be used for the innermost part of the ATLAS Pixel detector. r2001 Elsevier Science B.V. All rights reserved. Keywords: ATLAS; Bump bonding; Flip chip; MCM-D; Multi Chip Module; Thin lm; Pixel; Vertex-Detector 1. Introduction There are two developments that help a designer of a Vertex-Detector to implement an increasing number of features in the system. In the industry, the rst is known as System on a Chip (SoC), meaning that all features are implemented in one integrated circuit. This is achieved by enhancing the manufacturing process (mixed signal, BiCMOS, embedded RAM, etc.). The other way is to build the dierent function- alities in separate integrated circuits, using the appropriate process for each part (Bipolar, CMOS, PROM, RAM, NVRAM, etc.) and to build the specic device by mounting the parts needed in a single but complex package. This package provides the necessary connections be- tween the parts and the outer world. For Vertex-Detectors, the requirements on the modules are quite dierent to the normal industry ones. Cooling issues, for example, are well known in industry, but the temperature and power consumption ranges and the need for material reduction leads to completely dierent solutions. For the planned high energy physics experiments, additional requirements like radiation hardness have to be faced, which are more or less unknown in other elds. Protection against environmental impacts may be reduced to a minimum in Vertex- Detectors, causing one to talk about hybridisation instead of packaging. Although encapsulation is not needed in Vertex- Detector environments, the number of hybrids to be built and installed in the planned high energy physics experiments are orders of magnitudes higher than in the existing ones. Here, the production process and handling issues become *Corresponding author. E-mail address: [email protected], gerlach@whep. uni-wuppertal.de (P. Gerlach). 0168-9002/01/$ - see front matter r 2001 Elsevier Science B.V. All rights reserved. PII: S 0 1 6 8 - 9 0 0 2 ( 0 1 ) 0 1 1 2 8 - 7 crucial for the projects. In addition, the rising frequ- encies that were used require a dened behaviour of the connecting lines, meaning that the thickness of dielectrics and the width of signal lines have to be very well controlled. This leads to the challenge of improving all the connections within the module, the modules intra-connections, to a robust system with a high quality frequency behaviour. 2. Multi Chip Module techniques There are two widespread MCM techniques well known in the industry, the MCM-Ceramic and the MCM-Laminated. Driven by the rising needs of telecommunication devices, a third one called MCM-Deposited is currently reaching a high volume production state. 2.1. MCM-Ceramic The MCM-Ceramic (sometimes called MCM- Coered) provides the most robust modules, demonstrated by its usage in car-engine environ- ments. Three types of this technology are used: Thick Film, High Temperature Coered Ceramic (HTCC) and Low Temperature Coered Ceramic (LTCC). As dielectric materials, Al 2 O 3 ; AlN or glass and as conductors, Tg, Cu or Au are used. The main diculty is the shrinkage of the material during the ring process, resulting in a dicult dimensional control and the impossibility of building ground-planes due to warpage. On the other hand, more than 50-layer substrates are built using this technique. 2.2. MCM-Laminated Here, the layers are built separately and laminated together. This allows rigid and exible modules to be built. Enhanced lamination steps allow through holes, to connect non-adjacent conductor layers. Copper is used as conductor and as dielectric materials Kapton 1 and Upilex 2 dominate the market; both are available in a plurality of mutants. Common to both is the absorption of moisture in the range of 12 wt%, resulting in a rising dielectric constant e r : This advanced and exible technique with a large number of manufacturers will be used in many planned high energy physics projects, as it may be found in these proceedings. 2.3. MCM-Deposited The MCM-Deposited provides the highest con- nection density by depositing dielectric and con- ductor materials on a substrate. This is done using thin lm processing techniques. Al or Cu is used as conductor material. Copper may be deposited in two dierent methods. A subtractive method is to sputter the desired thickness of the layer. It is structured afterwards by masked etching. An additive method uses a thin sputtered seed-layer as plating base. The layer thickness is achieved by electro-plating the struc- tures needed. Only the seed-layer has to be etched afterwards. The nal metallisation of the top layer may be tuned to the mounting technique. As an example, for solder bump-bonding it may be Ni:P with an Au cover. The three mainly available dielectric materials are shown in Table 1. Some of them are photo- sensitive, thus reducing the number of process steps. As a summary, Table 2 shows a comparison of the Multi Chip Module techniques. 3. The ATLAS MCM-D Pixel Detector Module concept The ATLAS Pixel Detector will consist of two dierent types of hybrid pixel modules [1]. Following the current plans, the larger part will Table 1 Dielectric materials used for MCM-Deposited Material Trade name Manufacturer e r Cure temp. PI Pyralin DuPont 3.3 3504001C Epoxy Probelec Ciba 4.1 1201C BCB Cyclotene Dow 2.65 2501C 1 Kapton is a registered trade mark of Dow Chemical. 2 Upilex is a registered trade mark of UBE. P. Gerlach et al. / Nuclear Instruments and Methods in Physics Research A 473 (2001) 102106 103 consist of an MCM-L based hybrid. Details of this design may be found in Ref. [2]. The innermost barrel layer at a radius of 5 cm will be removable, so handling issues become more important. Taking this into account, a module concept based on the MCM-D technology was prototyped. The main idea of the ATLAS MCM-D Pixel Detector Module concept is to use the sensor (see Ref. [11]) as substrate for the thin lm structures. These structures provide all module intra-connec- tions. As illustrated in Fig. 1, this allows the integration of the signal-lines and the power- supply connections within the module, using bump-bonding=ip-chip as the only assembly technique. The signal-lines are placed above a ground-plane in a micro-strip conguration, guar- anteeing a dened impedance. All the module intra-connections are placed on an additional, insensitive area of the sensor, which is covered after ip-chipping by the data-buering and collecting part of the electronic circuits (see Refs. [3,4,10]). Major requirements for the thin lm technique are: * highest process temperature below 3001C; * 50 O micro-strip signal lines, * low power-supply connection resistance, * high inter-connection density. The rst item is caused by the sensitivity of the high resistive, oxygen-enriched silicon substrate. (Above 3001C the generation of thermal donors starts.) The second and third items are needed to ensure the proper functionality of the module. The last item is caused by the need for a connection between each sensor cell through the thin lms towards the bump-bond connecting the corre- sponding electronic cell. These connections, called feed throughs in the following, have to be built with a 50 mm pitch in the ATLAS pixel geometry. Feed throughs give an additional capacitive and resistive load to the electronics front-end. But they give the freedom to segmentise the sensor equally, determined only by the area and the number of channels provided by the electronics. In addition, the feed throughs may be used to connect the readout cells to a sensor segmented in a bricked way, improving the mean resolution in the long direction of the pixels. To achieve the items given above, a process using Benzocyclobutene (BCB, see Chapter 2:3) and electro-plated copper was chosen. In colla- boration with the Fraunhofer Institut f . uur Zuverl . aassigkeit und Mikrointegration (IZM, Berlin, Germany) a successful prototype program has Fig. 1. Schematic cross-section of the four layer bus and signal system. On the right-hand side, the feed through connections from the detector to the read out chip are illustrated. Table 2 Exemplary numbers of the dierent Multi Chips Module techniques MCM-C MCM-L MCM-D Max. no. of layers > 50 20 5 Dened waveguides Dicult Possible Easy Min. line-width=space mm 75=200 75=75 10=20 Min. via-diam.=pitch mm 90=200 50=100 20=50 Max. proc. temp. 1C 8501300 350 250 e r 710 34 2.65 Moisture absorption (wt%) F 12 0.2 P. Gerlach et al. / Nuclear Instruments and Methods in Physics Research A 473 (2001) 102106 104 been carried out, showing that high performing modules can be built following this concept. 3.1. Prototyping results To determine the inuence of the thin lm structures on the performance of the module, a comparison has been done with the results of the measurements of conventional hybrids. Here, only the results of the testbeam measurements of the charge collection and the spacial resolution are shown for the MCM-D hybrids. The results of the conventional hybrids can be found in Ref. [5] and detailed information about other measurements done with MCM-D hybrids in Refs. [69]. 3.1.1. Charge collection The increased coupling capacity between adja- cent pixels may result in a reduced charge seen by each electronic cell individually. The charge seen may be reconstructed using the calibrated pulse height information given by the pixel unit cell [4]. Selecting the appropriate single and double hit events of a testbeam measurement, the Landau distribution can be reconstructed as shown in Fig. 2. The maxima of these distributions are at the expected value and not changed compared to conventional hybrids. The maxima of the single and the added double hit information is at the same value, meaning that there is no additional charge loss for double hits. The ratio between the number of single and double hits is also not changed. 3.1.2. Spacial resolution The position of a hit pixel may be subtracted from the track position given by the testbeam set- up. This residual gives the spacial resolution of the pixel system. In Fig. 3, the resolutions in the short pixel dimension of 50 mm are shown. The single hit resolution, shown on the left-hand side, results in a plateau of 37:6 mm; representing the middle of the pixel. Here, single hits are most probable. The tails with a width of 5:2 mm are caused by the increasing charge sharing between the neighbour- ing pixels. Therefore, the number of single hits in this region decreases. For double hits, on the right- hand side of Fig. 3, the coordinates of the hit pixels may be weighted with the charge informa- tion, resulting in a resolution of 5:1 mm: Both the single and double hit resolutions agree with the ones measured with conventional hybrids [2,5]. 4. Conclusion The technologies developed in connection with electronic packaging (as MCM-D) may be adapted to the needs of Vertex-Detectors. But their specic requirements are not always covered by industry, i.e. there is still no exible MCM-L using aluminium as commercially available conductor. The upcoming developments driven by the mobile telecommunication have the potential to integrate passive components in the modules intra-connec- tion structures and new dielectric materials, and large area processing techniques will result in new ways of building Vertex-Detectors. Fig. 2. Reconstructed energy deposition seen by an MCM-D Single Chip assembly. P. Gerlach et al. / Nuclear Instruments and Methods in Physics Research A 473 (2001) 102106 105 Acknowledgements The prototyping program of MCM-D pixel detector modules has been done in the context of the ATLAS Pixel Project (CERN), in close collaboration with the Fraunhofer Institut f . uur Zuverl . aassigkeit und Mikrointegration (IZM, Berlin, Germany). References [1] ATLAS Pixel Detector, Technical Design Report, CERN=LHCC=98-13, (5=1998). [2] F. Ragusa, Recent Developments in the ATLAS Pixel Detector, Proceedings of the Eighth International Work- shop on Vertex Detectors, VERTEX 99, 2025 June 1999, Texel, Netherlands, Nucl. Instr. and Meth. A 447 (2000) 184. [3] K. Einsweiler, et al., On the performance and limitations of a dual threshold discriminator pixel readout circuit for LHC, Proceedings of the IEEE Nuclear Science Sympo- sium, Toronto, Canada, 1998. [4] S.I. Meuser, Pixel Readout Chip for the ATLAS experi- ment, Proceedings of the IEEE Nuclear Science Sympo- sium, Toronto, Canada, 1998. [5] C. Troncon, Detailed studies of the ATLAS Pixel Detector, Proceedings of the IEEE Nuclear Science Symposium, October 1999, Seattle, Wash., IEEE Trans. Nucl. Sci. 47 (2000) 737. [6] K.-H. Becks, et al., A Multi Chip Module, the basic building block for large area pixel detectors, Procee- dings of the IEEE Mutli-Chip Module Conference, 1996, p. 16. [7] K.-H. Becks, et al., A MCM-D type module for the ATLAS Pixel Detector, Proceedings of the IEEE Nuclear Science Symposium, Toronto, Canada, 1998. [8] M. T. oopper, et al., Fabrication of a high-density system using BCB=Cu technology, Proceedings of the Interna- tional Conference on High Density Packaging and MCMs, Denver, Colorado, April 1999. [9] C. Grah, Pixel Detector Modules using MCM-D technol- ogy, Proceedings of the Pixel 2000, Genova, Italy, 2000 Nucl. Instr. and Meth. A 465 (2001) 211. [10] R. Beccherle, The Module Controller Chip (MCC) of the ATLAS Pixel Detector, Proceedings of the IEEE Nuclear Science Symposium, Toronto, Canada, 1998. [11] M.S. Alam, et al., The ATLAS silicon sensors, Nucl. Instr. and Meth. A 456 (2001) 217. Fig. 3. Residuals expectedFmeasured position of single hits and weighted double hits, with the latter resulting in a resolution of s 5:1 mm: P. Gerlach et al. / Nuclear Instruments and Methods in Physics Research A 473 (2001) 102106 106