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Diode Experiment

This document describes an experiment to draw the voltage-current (V-I) characteristics of a p-n junction diode. The procedure involves applying forward and reverse bias to the diode and measuring the corresponding current. The diode equation is provided which describes the relationship between voltage, current, and other factors. Graphs of the forward and reverse V-I characteristics will be plotted from the experimental data, and the static and dynamic resistances of the diode will be calculated. Precautions are noted such as ensuring tight connections and not exceeding the breakdown voltage.

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Shubham Goel
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2K views4 pages

Diode Experiment

This document describes an experiment to draw the voltage-current (V-I) characteristics of a p-n junction diode. The procedure involves applying forward and reverse bias to the diode and measuring the corresponding current. The diode equation is provided which describes the relationship between voltage, current, and other factors. Graphs of the forward and reverse V-I characteristics will be plotted from the experimental data, and the static and dynamic resistances of the diode will be calculated. Precautions are noted such as ensuring tight connections and not exceeding the breakdown voltage.

Uploaded by

Shubham Goel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Engineering Physics Lab (PHY102)

Experiment No:-
__________________________________________________________________________________

Objective: To draw the (V-I) characteristics of p-n junction diode and to estimate the dynamic and
static resistance.
Apparatus Required: Diode trainer, Power supply, voltmeter, ammeter and connecting wires etc.
Theory and Formula Used: An equation describes the exact current through a diode, given the
voltage dropped across the junction, the temperature of the junction, and several physical constants. It
is commonly known as the diode equation:
I
D
= I
s
{exp. (eV
D
/k
B
T) -1},
where I
D
is diode current in amps and I
s
is total saturation current in amps.
V
D
= Voltage applied across diode in Volts, It is positive for forward bias and negative for reverse
bias.
k
B
= Boltzmann's constant (1.38 10
-33
)
T = Junction temperature in Kelvin
Suppose a forward bias is applied such that
exp. (eV
D
/k
B
T) 1, then
I
D
= I
s
exp(eV
D
/k
B
T)
This shows that in forward bias, current increases exponentially as shown (V-I) graph in figure 3.
When a reverse bias is applied such that
exp. (-eV
D
/k
B
T) 1, then
I
D
= -I
s
Which shows that in reverse bias current remains constant at I
s
as shown (V-I) graph in figure-3.




Figure 1. A P-N junction diode



Figure 2. Diode operation: (a) Current flow is permitted the diode is forward biased. (b)
Current flow is prohibited; the diode is reversed biased.

Engineering Physics Lab (PHY102)

When the polarity of the battery is such that electrons are allowed to flow through the diode, the diode
is said to be forward-biased. Conversely, when the battery is backward and the diode blocks the
current, the diode is said to be reverse-biased. A diode may be thought of as like a switch: closed
when forward-biased and open when reverse-biased.
Circuit Diagram: The circuit diagram is as shown below in Figure 3.
(A) For forward bias:



(B) Reverse Bias

Figure 3
Engineering Physics Lab (PHY102)




Procedure:
(A) Forward Bias:
1. Before switching on the supply rotate the potentiometer P1 fully in CCW (counter clockwise
direction).
2. Connect the ammeter between TP4 and TP10 to measure the diode current I
D
(mA) and set the
ammeter to 200 mA range.
3. Connect the voltmeter across TP3 and TP11 to measure the diode voltage V
D
and set the voltmeter
to 2 V range.
4. Switch on the power supply.
5. Vary the potentiometer P1 so as to increase the value of diode voltage V
D
from 0 to 1V (0.83V) in
steps and measure the corresponding values of diode current I
D
in mA and note down in the
Observation Table- 1. From 0.5 V to 0.7 V, take readings in steps of 0.02 V.
6. Plot a curve between diode voltage V
D
and diode current I
D
as shown in Figure 4 (First quadrant)
using suitable scale, with the help of Observation Table- 1. This curve is the required forward
characteristics of Si diode.
7. Switch off the supply.

(B) Reverse Bias:
1. Before switching on the supply rotate potentiometer P1 fully in CCW (counter clockwise
direction).
2. Connect the ammeter between TP5 and TP10 to measure the diode current I
D
(A) & and set the
ammeter to 20A range.
3. Connect the voltmeter across TP3 and TP11 to measure the diode voltage V
D
and set the voltmeter
to 20V range.
4. Switch on the power supply.
5. Vary the potentiometer P1 so as to increase the value of the diode voltage V
D
from 0 to 7 V in steps
of 0.5 V . Measure the corresponding values of diode current I
D
in A and note down in the
Observation Table- 2.
6. Plot a curve between diode voltage V
D
and diode current I
D
as shown in Figure 4 (third quadrant)
using suitable scale with the help of Observation Table -2. This curve is the required reverse
characteristics of the Ge diode.
7. Switch off the supply.

Observation Tables:
(A) Forwad Bias (Table-1) (B) Reverse Bias(Table-2)
S. no. Diode Voltage
(V
D
)
Diode current I
D

(mA)
S. no. Diode Voltage
(V
D
)
Diode current I
D

(A)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8
9 9
10 10
11 11
12 12
Engineering Physics Lab (PHY102)

Graph: (V-I) Characteristics of p-n junction diode





Figure 4. Diode curve: showing knee at 0.7 V forward bias for Si, and reverse breakdown.

Calculations: The static and dynamic resistance can be determined by:

Static Resistance: R
D
=V
D
/I
D
ohms

Dynamic Resistance: r
D
= V
D
/I
D
ohms

Error: %error = 100
.
. exp .
x
value std
value value std

Precautions and Sources of Error:
1. Make sure that all the connections are tight.
2. The voltage should not exceed the specified breakdown voltage in the reverse bias.
3. The voltage should be increased gradually in small steps.

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