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Problem Set 1 Solutions Updated

This document contains a homework assignment on microelectronic devices and circuits from the Massachusetts Institute of Technology. It includes 4 problems: 1) Calculating carrier concentrations and types for silicon samples with different doping, and increasing the electron concentration of one sample. 2) Finding carrier concentrations for silicon doped with Nd at different temperatures corresponding to different intrinsic carrier concentrations. 3) Calculating sheet resistance and resistance of a layout for uniformly doped ion-implanted silicon layers. 4) Plotting the potential and calculating diffusion currents for a silicon slab with a linear electron concentration gradient, explaining how drift current balances the unequal diffusion currents.

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Muhammad Khiruzzaman
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186 views4 pages

Problem Set 1 Solutions Updated

This document contains a homework assignment on microelectronic devices and circuits from the Massachusetts Institute of Technology. It includes 4 problems: 1) Calculating carrier concentrations and types for silicon samples with different doping, and increasing the electron concentration of one sample. 2) Finding carrier concentrations for silicon doped with Nd at different temperatures corresponding to different intrinsic carrier concentrations. 3) Calculating sheet resistance and resistance of a layout for uniformly doped ion-implanted silicon layers. 4) Plotting the potential and calculating diffusion currents for a silicon slab with a linear electron concentration gradient, explaining how drift current balances the unequal diffusion currents.

Uploaded by

Muhammad Khiruzzaman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Massachusetts Institute of Technology

Department of Electrical Engineering and Computer Science


6.012
Microelectronic Devices and Circuits
Spring 2007
February 14, 2007 - Homework #1
Due - February 21, 2007
_____________________________________________________________

Problem 1

A piece of silicon is doped with N
a
= 2x10
15
cm
-3
and N
d
= 1x10
15
cm
-3


a) What is the majority carrier? Is the silicon type n or type p?
b) Find the electron and hole concentration and mobility at room temperature.
c) We want increase the electron concentration to 1x10
17
cm
-3
. What is the
additional dopant type and concentration? What is the new electron mobility?

a) N
a
> N
d
. Holes. P-type.
b) Total impurities = N
a
+ N
d
= 3x10
15
cm
-3
.
According to figure 2.8.

p
= 475 cm
2
(Vs)
-1

n
= 1300 cm
2
(Vs)
-1

N
a
N
d
>> n
i

p
0
= N
a
N
d
= 10
15
cm
-3

n
0
= n
i
2
/p
0
= 10
5
cm
-3

c) N
d
N
a
= 10
17
N
d
= N
d
(current) + N
d
(additional)
Need 1.01x10
17
additional donors per cm3.

n
= 775 cm
2
(Vs)-1

Problem 2

A piece of silicon is doped with N
d
= 1x10
15
cm
-3
. Below is a table for the intrinsic
electron concentration for three different temperatures.

n
i
Temperature
1x10
10
cm
-3
300 K (room temp.)
1x10
15
cm
-3
600 K
1x10
17
cm
-3
1150 K

a) Calculate the total hole and electron concentration for all three different
temperatures.

a)
T = 300, N
d
>> n
i

n = N
d
= 1x10
15
cm
-3
p = n
i
2
/n = 1x10
5
cm
-3
T = 600, N
d
~ n
i

n = N
d
/2 + N
d
/2(1 + 4 n
i
2
/ N
d
2
)
1/2
= 1.62x10
15
cm
-3
p = n
i
2
/n = 6.18x10
14
cm
-3
T = 1150, N
d
<< n
i

n = n
i
= 1x10
17
cm
-3
p = n
i
2
/n = 1x10
17
cm
-3



Problem 3

Given a uniformly n-type ion-implanted layer with thickness t = 1 um and doping
concentration N
d
= 10
17
cm
-3
.

a) What is the sheet resistance?
b) What is the resistance of the layout shown below? Assume that the contacts each
contribute .65 squares.



c) By adding additional dopants, we make a new n-type ion-implanted resistor with
an average doping concentration N
d1
= 2x10
17
cm
-3
over the depth 0 < d < 0.5 m
and N
d2
= 10
17
cm
-3
over the depth 0.5 m < d < 1 m. Find the new sheet
resistance.

a)(qN
d

n
t)
-1
= (1.6x10
-19
x 10
17
x 775 x 10
-4
) = 806 /
Note t = 10
-4
cm.
b) Total number of squares = .65x2 + 80/4 = 21.3
Resistance =

x number of squares = 806 x 21.3 =17.2 k


c) Think of this as two resistors in parallel; one on top and one on bottom.

top/
= (1.6x10
-19
x 2x10
17
x 600 x 5x10
-5
)
-1
= 1041 /

bot/
= (1.6x10
-19
x 10
17
x 775 x 5x10
-5
)
-1
= 1613 /
Total sheet resistance = (
top/
)//(
bot/
) = 1041 x 1613 / (1041 + 1613)= 633 /


Problem 4

A slab of silicon has the following electron distribution.



a) Assume thermal equilibrium. Plot the potential .
b) What is the electron diffusion current density? Hole diffusion current density?
Assume D
n
= 2 x D
p
= 26 cm
2
/s
c) The hole and electron diffusion current densities do not sum to zero; however, the
silicon cannot have a net current since it is an open circuit. Explain what is
happening.





a) Using (x) = 60 mV * log (n(x)/10
10
)

Silicon Slab


b) The slope of the line is 10
16
10
15
/ 10
-2
= 9x10
17
.
J
diff,n
= qD
n
(dn/dx) = 26 x 9x10
17
x 1.6x10
-19
= 3.744 A cm
-2


Assume room temperature, so p = n
i
2
/n. To simplify the problem, assume that the hole
concentration is also in a straight line. Using the endpoints, p(x=0) = 10
5
and p(x=10
-12
)
= 10
4
. Slope is -9x10
6
.

J
diff,p
= -qD
p
(dp/dx) = 0.5 x 26 x 9x10
6
x 1.6x10
-19
= 1.872x10
-11
A cm
-2


Notice J
diff,n
>> J
diff,p

c) The voltage difference across the silicon produces a drift current that cancels out the
diffusion current. Again, the electron drift current is much larger than the hole drift
current because the electron concentration is much greater.

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