ELECTRONIC ENGINEERING I Lab VIVA Questions

SEMICONDUCTOR PHYSICS:
1. What are intrinsic and extrinsic semiconductors?
2. List the properties of semiconductors.
3. Draw the energy band diagram of germanium and a metal.
4. What do you mean by alance electron?
!. "ow drift current is produced?
#. Define $electron %olt&.
'. (he relationship between field intensity and potential is gi%en by )))))))))))))).
*. What is the %alue of +xample for ,e and -i at room temperature .3//01?
2. Draw the energy band diagram of a semiconductor and conductor.
1/. What is drift current? 3pon what factors it depends?
11. Why do we go for +xtrinsic semiconductor?
12. "ow is extrinsic semiconductor formed?
13. List the penta%alent and tri%alent impurities.
14. What is diffusion current?
1!. Distinguish between Drift and Diffusion current.
1#. Differentiate insulators4 semiconductors and metals.
1'. +xplain what is hole. "ow do they mo%e in intrinsic semiconductor?
1*. What does doping in semiconductor mean?
12. +xplain ma5ority and minority carrier in semiconductor?
2/. What is fermi le%el? "ow is it useful in the analysis of semiconductors?
21. Define the term&s conducti%ity and mobility in semiconductor.
22. -tate +instein relationship.
23. Define carrier lifetime.
24. -tate mass action law.
2!. Write down the expressions4 which are used for finding the electron and hole
concentration.
2#. Deri%e the continuity e6uation from the first principle.
2'. +xplain drift and diffusion current and write the expressions for total 7urrent density
due to holes and electrons
2*. Deri%e the e6uation for the concentration for holes and electrons.
22. +xplain in detail the classification of solids with energy band diagram.
3/.+xplain about8
a1 Donor atoms b1 9cceptor atoms c1 :ntrinsic semiconductors d1 ;<type +xtrinsic
-emiconductor e1 =<type semiconductor
31. +xplain about8
a1 alence shell b1 alence electron c1 >ree electrons d1 "oles
e1 7o%alent bond with suitable diagram
I! PN"#io#e
1. Define depletion region of a diode?
2. What is meant by transition ? space charge capacitance of a diode?
3. :s the <: relationship of a diode Linear or +xponential?
4. Define cut<in %oltage of a diode and specify the %alues for -i and ,e diodes?
!. What are the applications of a p<n diode?
#. Draw the ideal characteristics of =<; 5unction diode?
'. What is the diode e6uation?
*. What is =:?
2. What is the brea0 down %oltage?
1/. What is the effect of temperature on =; 5unction diodes?
1. What is the need for doping?
2. "ow depletion region is formed in the =; 5unction?
3. What is lea0age current?
4. What is brea0 down %oltage?
!. What is an ideal diode? "ow does it differ from a real diode?
#. What is the effect of temperature in the diode re%erse characteristics?
'. What is cut<in or 0nee %oltage? -pecify its %alue in case of ,e or -i?
*. What are the difference between ,e and -i diode.
2. What is the capacitance formed at forward biasing?
1/. What is the relationship between depletion width and the concentration of impurities?
1. 7omment on diode operation under @ero biasing condition
2. "ow does =;<5unction diode acts as a switch?
3. What is pea0 in%erse %oltage?
4. What is the need for connecting Aesistance As in series with =; diode.
!. What are the applications of =; 5unction diode?
II! $ENER DIODE
1. What type of temperature 7oefficient does the @ener diode ha%e?
2. :f the impurity concentration is increased4 how the depletion width effected?
3. Does the dynamic impendence of a @ener diode %ary?
4. +xplain briefly about a%alanche and @ener brea0downs?
!. Draw the @ener e6ui%alent circuit?
#. Differentiate between line regulation ? load regulation?
'. :n which region @ener diode can be used as a regulator?
*. "ow the brea0down %oltage of a particular diode can be controlled?
2. What type of temperature coefficient does the 9%alanche brea0down has?
1/. By what type of charge carriers the current flows in @ener and a%alanche
brea0down diodes?
1. +xplain the concept of @ener brea0down?
2. "ow depletion region gets thin by increasing doping le%el in @ener diode?
3. -tate the reason why an ordinary diode suffers a%alanche brea0down rather than @ener brea0down?
4. ,i%e the reasons why @ener diode acts as a reference element in the %oltage regulator circuits.
1. 7an we use Cener diode for rectification purpose?
2. What happens when the Cener diodes are connected in series?
3. "ow will you differentiate the diodes whether it is Cener or a%alanche when you are gi%en two
diodes of rating #.2 % and 24?
III! %&T C% Con'i(u)ation
1. What is the range of D for the transistor?
2. Draw the input and output characteristics of the transistor in 7B configuration?
3. :dentify %arious regions in output characteristics?
4. What is the relation between D and E?
!. What are the applications of 7B configuration?
#. What are the input and output impedances of 7B configuration?
'. Define D.alpha1?
*. What is +9ALF effect?
2. Draw diagram of 7B configuration for =;= transistor?
1/. What is the power gain of 7B configuration?
IV! %&T"CE *on'i(u)ation
1. What is the range of E for the transistor?
2. What are the input and output impedances of 7+ configuration?
3. :dentify %arious regions in the output characteristics?
4. what is the relation between D and E
!. Define current gain in 7+ configuration?
#. Why 7+ configuration is preferred for amplification?
'. What is the phase relation between input and output?
*. Draw diagram of 7+ configuration for =;= transistor?
2. What is the power gain of 7+ configuration?
1/. What are the applications of 7+ configuration?
1. What is the significance of arrow in the transistor symbol?
2. Define current amplification factor?
3. What is the function of a transistor?
4. ,i%e the doping le%els and the width of the layers of BG(.
!. (wo discrete diodes connected bac0<to<bac0 can wor0 as a transistor? ,i%e comments.
#. >or amplification4 7+ configuration is preferred4 why?
'. (o operate a transistor as amplifier4 the emitter 5unction is forward biased and the collector
5unction is re%ersed biased4 why?
*. With the rise in temperature4 the lea0age collector current increases4 why?
2. 7an a transistor base emitter 5unction be used as @ener diode?
1. ;=; transitors are more preferable for amplification purpose than =;= transistors. Why?
2. +xplain the switching action of a transistor?
3. 9t what region of the output characteristics4 a transistor can act as an amplifier?
4. What happens when we change the biasing condition of the transistors.
!. Why the output is phase shifted by 1*/ H only in 7+ configuration.
V! +",a)a-ete)s
1. What are the h<parameters?
2. What are the limitations of h<parameters?
3. What are its applications?
4. Draw the +6ui%alent circuit diagram of " parameters?
!. Define " parameter?
#. What are tabular forms of " parameters monoculture of a transistor?
'. What is the general formula for input impedance?
*. What is the general formula for 7urrent ,ain?
2. What is the general formula for oltage gain?
VI! HAL."/AVE )e*ti'ie)
1. What is the =: of "alf wa%e rectifier?
2. What is the efficiency of half wa%e rectifier?
3. What is the rectifier?
4. What is the difference between the half wa%e rectifier and full wa%e Aectifier?
!. What is the oIp fre6uency of Bridge Aectifier?
#. What are the ripples?
'. What is the function of the filters?
*. What is (3>?
2. What is the a%erage %alue of oIp %oltage for "WA?
1/. What is the pea0 factor?
1. Why are rectifiers used with a filter at their output?
2. What is the %oltage regulation of the rectifier?
3. What is the ideal %alue of regulation?
4. What does no load condition refer to?
!. What are the ad%antages of bridge rectifier?
#. What are the ad%antages and disad%antages of capacitor filter?
'. What are the applications of rectifiers?
*. What is the regulation for a
.i1 "alf < wa%e circuit .ii1 >ull<wa%e circuit
2. What is =:? -tate it %alue in case of .i1 "alf wa%e .ii1 >ull wa%e .iii1 Bridge rectifier.
1/. What is the need for rectification?
VII! .ULL"/AVE )e*ti'ie)
1. Define regulation of the full wa%e rectifier?
2. Define pea0 in%erse %oltage .=:1? 9nd write its %alue for >ull<wa%e rectifier?
3. :f one of the diode is changed in its polarities what wa%e form would you get?
4. Does the process of rectification alter the fre6uency of the wa%eform?
!. What is ripple factor of the >ull<wa%e rectifier?
#. What is the necessity of the transformer in the rectifier circuit?
'. What are the applications of a rectifier?
*. What is meant by ripple and define Aipple factor?
2. +xplain how capacitor helps to impro%e the ripple factor?
1/. 7an a rectifier made in :;D:9 .J23/%4 fJ!/"@1 be used in 3-9 .J11/%4
fJ#/"@1?
1. 9 diode should not be employed in the circuits where it is to carry more than its maximum forward
current4 why?
2. While selecting a diode4 the most important consideration is its =:4 why?
3. (he rectifier diodes are ne%er operated in the brea0down region4 why?
4. "ow big should be the %alue of capacitor to reduce the ripple to /.1?
!. What happens when we remo%e capacitor in the rectifier circuit?
#. :f a transformer is remo%ed from the rectifier circuit4 what happens to the circuit?
VIII! .ET A-,0i'ie)s
1. What are the ad%antages of >+(?
2. :s >+( is unipolar or bipolar? Why is it called so?
3. +xplain different regions of <: characteristics of >+(?
4. What are the applications of >+(?
!. What are the types of >+(?
#. Draw the symbol of >+(.
'. What are the disad%antages of >+(?
*. What is the difference between >+( and BG(?
2. :s >+( a %oltage controlled or current controlled de%ice?
1/. :s >+( a current source or a %oltage source?
11. Draw the e6ui%alent circuit of common source >+( amplifier?
12. What is the %oltage gain of the >+( amplifier?
13. What is the input impedance of >+( amplifier?
14. What is the output impedance of >+( amplifier?
1!. What are the parameters of >+(?
4. Why thermal runaway does not occur in >+(?
!. What is the difference between KL->+( and >+(?
1. What is trans conductance?
2. Why current gain is important parameter in BG( whereas conductance is important parameter in
>+(?
3. What is pinch off %oltage
4. "ow can a%alanche brea0down be a%oided in >+(
!. Why does >+( produce less electrical noise than BG(.
I1! CE A-,0i'ie)
1. What is phase difference between input and output wa%eforms of 7+ amplifier?
2. What type of biasing is used in the gi%en circuit?
3. :f the gi%en transistor is replaced by a p<n<p4 can we get output or not?
4. What is effect of emitter<bypass capacitor on fre6uency response?
!. What is the effect of coupling capacitor?
#. What is region of the transistor so that it is operated as an amplifier?
'. "ow does transistor acts as an amplifier?
*. Draw the h<parameter model of 7+ amplifier?
2. What type of transistor configuration is used in intermediate stages of a multistage amplifier?
1/. What is +arly effect?
1! CC a-,0i'ie)
1. What are the applications of 77 amplifier?
2. What is the %oltage gain of 77 amplifier?
3. What are the %alues of input and output impedances of the 77 amplifier?
4. (o which ground the collector terminal is connected in the circuit?
!. :dentify the type of biasing used in the circuit?
#. ,i%e the relation between D4 E and M.
'. Write the other name of 77 amplifier?
*. What are the differences between 7+47B and 77?
2. When compared to 7+4 77 is not used for amplification. Gustify your answer?
1/. What is the phase relationship between input and output in 77?
1. Why 77 7onfiguration is called emitter follower?
2. 7an we use 77 configuration as an amplifier?
3. What is the need for analy@ing the transistor circuits using different parameters?
4. What is the significance of hybrid model of a transistor?
!. :s there any phase shift between input and output in 77 configuration.
1. What are the applications of 77 configuration?
2. 7ompare the %oltage gain and input and output impedances of 7+ and 77 configurations.
3. BG( is a current controlled de%ice. Gustify.
1I! Si0i*on Cont)o00e# Re*ti'ie) SCR!
1. What the symbol of -7A?
2. :; which state -7A turns of conducting state to bloc0ing state?
3. What are the applications of -7A?
4. What is holding current?
!. What are the important type&s thyristors?
#. "ow many numbers of 5unctions are in%ol%ed in -7A?
'. What is the function of gate in -7A?
*. When gate is open4 what happens when anode %oltage is increased?
2. What is the %alue of forward resistance offered by -7A?
1/. What is the condition for ma0ing from conducting state to non<conducting state?
1II! Uni2un*tion T)ansisto) U&T!
1. What is the symbol of 3G(?
2. Draw the e6ui%alent circuit of 3G(?
3. What are the applications of 3G(?
4. >ormula for the intrinsic stand<off ratio?
!. What does it indicates the direction of arrow in the 3G(?
#. What is the difference between >+( and 3G(?
'. :s 3G( is used an oscillator? Why?
*. What is the Aesistance between B1 and B2 is called as?
2. What is its %alue of resistance between B1 and B2?
1/. Draw the characteristics of 3G(?
+xperiment N 1
.-tudy of 7AL1
1. "ow do you measure fre6uency using the 7AL?
2. 7an you measure signal phase using the 7AL?
3. -uggest a procedure for signal phase measurement using the data from 7AL?
4. 7an you comment on the wa%elength of a signal using 7AL?
!. "ow many channels are there in a 7AL?
#. 7an you measure D7 %oltage using a 7AL?
+xperiment N 2
.7omparison of diodes1
1. What is doping?
2. What is cut<in or 0nee %oltage and specify its %alue in ,ermanium and -ilicon.
3. What is re%erse saturation current of a diode?
4. What is depletion region?
!. What is meant by transition ? space charge capacitance of a diode?
#. What happens to depletion region on forward biasing and re%erse biasing?
'. What are the specifications of a diode?
*. What is the maximum forward current and maximum re%erse %oltage? Why is it
re6uired?
2. What is the effect of temperature on diode re%erse characteristics?
1/. What is an ideal diode and how does it differ from a real diode?
11. What is meant by a diode model? ;ame any two models.
12. What is diode e6uation?
13. What are the applications of a diode?
14. What is =:? What is brea0down %oltage?
1!. What is the effect of temperature on =; 5unction diodes?
1#. :f the impurity concentration is increased4 how does the depletion width get effected?
1'. What is @ener diode? "ow is it different from an ordinary diode?
1*. What are Cener and 9%alanche brea0down mechanisms?
12. What type of biasing must be used when a Cener diode is used as a regulator?
2/. What is the region of operation in which the Cener diode wor0s?
21. What types of temperature coefficient does the Cener diode ha%e?
22. 7an Cener be used as a rectifier?
23. What are the ad%antages of the Cener diode?
24. What is the application of Cener diode?
2!. What are the factors that affect the stability?
2#. Does the dynamic impedance of a Cener diode %ary?
2'. Define oltage Aegulator.
2*. +xplain how the Cener diode acts as a %oltage regulator.
22. Differentiate between the line and load regulation?
3/. "ow can the brea0down %oltage of a particular diode be controlled?
31. What type of temperature coefficient does the 9%alanche brea0down ha%e?
32. By what type of charge carriers the current flows in Cener and 9%alanche brea0down
diodes?
+xperiment N 3
."alf<wa%e and >ull<wa%e rectifiers without filters1
1. Define rectifier.
2. What are the disad%antages of half<wa%e rectifier?
3. What are the disad%antages of full<wa%e rectifier?
4. 7ompare half<wa%e and full<wa%e rectifiers.
!. Why is the bridge wa%e rectifier preferred o%er the full<wa%e rectifier?
#. What is the difference between center<tapped and ordinary transformer?
'. What is the difference between rectifier and regulator?
*. Define pea0 factor4 form factor and transformer utili@ation factor.
2. Define pea0 in%erse %oltage .=:1.
1/. What is the %alue of =: for half<wa%e and full<wa%e rectifiers.
+xperiment N 4
."alf<wa%e and full<wa%e rectifiers with filters1
1. What does $no load& condition refer to?
2. What is the need for filters in rectifier circuits?
3. What are the applications of rectifiers?
4. What is the use of bleeder resistor?
+xperiment N ! ? #
.-tatic characteristics of BG( in 7+ ? 7B configurations1
1. Draw the symbols of ;=; and =;= transistors.
2. Define D4 E and M and gi%e the relation between them.
3. What is the maximum %alue of D?
4. What is the meaning of bipolar 5unction transistor?
!. :s BG( a current controlled de%ice or a %oltage controlled de%ice?
#. What are the three regions of operations of a transistor?
'. What is early effect?
*. Why is base of a BG( made thin?
2. What is the significance of arrow in a transistor symbol?
1/. Which region is useful for amplification?
11. ,i%e the range of D and E.
12. What are the applications of a transistor?
13. What is the relation between :
B
and :
7
in acti%e region?
14. ,i%e some important specifications of a transistor.
1!. Why is the 7+ configuration more important than the other configurations?
1#. Why high input resistance and low output resistances are preferred in transistor circuits?
1'. :n saturation region of 7+ configuration4 as :
B
increases what happens to :
7
.
1*. What are the %alues of
B+.cut<off1
4
B+.acti%e1
and
B+.sat1
of a -ilicon and ,ermanium
transistors.
12. What are the %alues of
7+.sat1
of a -ilicon and ,ermanium transistors.
2/. What is the power gain of 7B and 7+ configurations?
21. Define current gain in 7+ configuration.
22. What is the phase relation between input and output?
+xperiment N '
.-tatic characteristics of >+(1
1. Why >+( is called a unipolar transistor?
2. What are the ad%antages of >+(?
3. What are the disad%antages of >+(?
4. 7ompare >+( and BG(.
!. :s >+( a current controlled or %oltage controlled de%ice?
#. What is meant by pinch<off %oltage?
'. Why should gate<to<source %oltage be negati%e?
*. What are the applications of >+(?
2. Define the >+( parameters.
1/. What do mean by drain<to<source saturation current?
+xperiment N *
.-tatic characteristics of 3G( ? -7A1
1. What is the symbol of 3G(?
2. Draw the e6ui%alent circuit of 3G(?
3. What are the applications of 3G(?
4. What is the formula for the intrinsic stand<off ratio?
!. What does the direction of arrow indicate in the 3G(?
#. What is the difference between >+( and 3G(?
'. :s 3G( used as an oscillator? Why?
*. What is the resistance between B1 and B2 called?
2. What is it %alue of resistance between B1 and B2
1/. Draw the characteristics of 3G(.
11. What is meant by the term brea0 o%er %oltage in -7A?
12. "ow many 5unctions are there in -7A?
13. Define holding current.
14. +xplain -7A >iring.
1!. ;ame few applications of -7A.
1#. What is meant by holding %oltage and holding current in -7A?
1'. :s brea0 o%er %oltage in -7A a function of gate current? Discuss.
1*. ;ame %arious regions of -7A characteristics.
12. ;ame different terminals of -7A.
2/. What are the specifications of -7A?
21. :n which state -7A turns on conducting state to bloc0ing state?
22. What is the function of gate in -7A?
23. When gate is open4 what happens when anode %oltage is increased?
24. What is the %alue of forward resistance offered by -7A?
2!. What is the condition for ma0ing from conducting state to non<conducting state.

+xperiment N 2
.A7 coupled amplifier BG( fre6uency response1
1. What is an amplifier?
2. What are the features of 7+ amplifier?
3. Does phase re%ersal exist in 7+ amplifier?
4. Define lower and upper cut<off fre6uencies.
!. What do you mean by 3<dB point?
#. Define bandwidth.
'. "ow transistor acts as an amplifier?
*. What is the significance of operating point?
2. Draw the h<parameter model for a 7+ amplifier.
1/. What is the effect of coupling capacitor on low fre6uency response?
+xperiment N 1/
.+mitter >ollower N 771
1. What are the features of 77 amplifier?
2. Does phase re%ersal exist in 77 amplifiers?
3. Why 77 amplifier is also called as emitter follower?
4. What are the applications of an emitter follower?
!. 7ompare the input and output resistances and performance of all the 3 configurations.
#. "ow do the biasing resistor %alues affect the input resistance of the circuit?
'. Draw the h<parameter model for a 77 amplifier.
*. What are the ad%antages of hybrid parameters?
2. Why hybrid parameters are called so?
1/. What is the purpose of bloc0ing capacitor?
11. Draw the +bers<Koll model for a =;= transistor.
12. :s it possible to construct a transistor by placing two isolated diodes bac0 to bac0?
13. Define current amplification factor M.
14. Why 77 configuration is preferred for buffering?
+xperiment N 11
.-ource >ollower N 7D1
1. Why a field effect transistor called so?
2. "ow does >+( beha%e for small and large %alues of
D-
?
3. +xplain how a >+( is used as a %oltage %ariable resistor?
4. What are the applications of >+( amplifier?
!. 7an you name the analogous configuration in transistors?
#. Draw the small signal model of >+(.
'. What do you mean by depletion and enhancement type of KL->+(s?
*. What is the difference between G>+(s and KL->+(s?
2. What is the difference between depletion and enhancement type of KL->+(s?
1/. What is an in%ersion layer in KL->+(s?
11. 7ompare n<channel and p<channel >+(s.
+xperiment N 12
.Biasing of BG(1
1. What are the ad%antages of self<bias?
2. What are the %arious other configurations a%ailable for bias?
3. What are the applications of fixed bias configuration?
4. What are the applications of collector to base bias configuration?
!. What are the disad%antages of fixed bias configuration?
#. "ow to o%ercome the abo%e disad%antages?
E1PLANATION O. IMPORTANT POINTS
UNIT I :: ELECTRON DYNAMICS: CRO

12 31
1.#/2 1/ 4 2.1 1/ e C m kg

, F force on electron in uniform electric field E
UNIT II :: SEMICONDUCTOR JUNCTION

4
i e
S G
have 4 electrons in covalent bands. Valency of 4. Doping with trivalent
elements maes O O p , !entavalent elements maes O O n semiconductor.
"onductivity ( )
n p
e n p +
where
4 n p
are concentrations of Dopants.
?
n p


are mobilitys of electron and hole respectively.
Diode e#uation

1
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d s
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/
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s
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1/ C
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of forward biased diode it is I
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T
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n
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m
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UNIT III :: FILTERS
1armonic "omponents in F2 -utput,
/
2 4 1 1
cos 2 cos 4 .....
3 1!
m
V
v wt wt


+ +
' ;


"apacitance +nput Filter,
+nductor +nput Filter,
"ritical inductance is that value at which
diode conducts continuously, in or half cycle.
(" F+()E*,
2
2
12 LC

or
1.2
4 !/ 4 4 . for H Lin H Cin !
LC

F+()E*,
*" F+()E*,
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c c c
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UNIT - IV
&7), &ipolar 7unction )ransistor has 3 7unctions8 &E, &"
"omponents of current are
4
n$ p$
I I
at $% 9unction where
n$ n$
n$ p$ $
I I
I I I

+

Emitter efficiency,
S nc
n$
I
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transportation factor.

I P I %$ f & %C r &
F2D &ias 0ormal
Diode :.; V Drop
*everse &ias
e & c
I I I +
P
c c
e &
I I
I I

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&ase (owest
e c &
I I I > >
(eaage currents 8 4 4
C%' C$' $%'
I I I ( ) 1
C$' C%'
I I +
< "onfigurations are used on &7), "E, "& = ""

"ommon Emitter, V+ characteristics

C$
C
V
%
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ce %$
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AC Equivalent Ciruit
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i
# (-2 .ED 1+51
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o
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AC Equivalent Ciruit
UNIT - V
hA parameters originate from e#uations of amplifier
2 2 / 2
4
i i i r f i
v (i ( v i ( i ( v + +
?
i i
v i are input voltage and current
2 2
? v i are output voltage and current

i
(
input impedance
4 4
ie i& ic
( ( ( ( ) 4 4 1
e e e
r r r + 1
]

f
(
current gain
4 4
fe f& fc
( ( (
( ) 4 4 1 + 1
]

r
(
reverse voltage transfer
4 4
re r& rc
( ( (

o
(
output admittance
4 4
oe o& oc
( ( (
F+E(D EFFE") )*/0,+,)-*, FE) is 6nipolar Device

C"n#truti"n n-C$annel %-C$annel
,%,ource, 5%5ate, D%Drain
5, 7unction in *everse &ias /lways

gs
V
"ontrols 5ate 2idth
V+ "1/*/")E*,)+",

Tran#&er C$arateri#ti# Ciruit F"r'ar( C$arateri#ti#

,hocley E#uation

2
1
gs
d dss
p
V
I I
V
_



,
,
/
1
gs
m m
p
V
g g
V
_



,
.-,FE)8 .etal -Bide ,emiconductor FE), +5FE)

De%leti"n T)%e M"#&et S)*+"l# En$ane*ent M"#&et

Depletion )ype .-,FE) can wor width
/
gs
V >
and
/
gs
V <
Tran#&er F"r'ar(
C$arateri#ti# C$arateri#ti#

Enhancement .-,FE) operates with,
gs t
V V >
,
t
V T(res(o)d Vo)tage
MOSFET J!ET
1igh
1/
1/
i
#
*
1/
/
!/ # k
1m
Depletion
Enhancement .ode
Depletion
.ode
Delicate *ugged

F"r'ar( C$arateri#ti# Tran#&er C$arateri#ti#

UNIT VI :: ,IASIN- in ,JT . JFET
FiBing -perating !oint C is biasing

FiBed &ias Emitter ,tabili'ed Feedbac &ias
CC % % %$
V I # V + FiBed &ias ( ) 1
CC C % % % %$
V # I I # V + + +
( ) 1 Ae
CC % % %$
V I # V + + +
D
*!$T I Ta&)e
gs
V
D
I
:
DSS
I
:.<
P
V
2
DSS
I
:.D
P
V
4
DSS
I
P
V :
COM!ARISIONS
,JT FET
"urrent controlled Voltage controlled
1igh gain .ed gain
&ipolar 6nipolar
)emp sensitive (ittle effect of )
1igh 5&2! (ow 5&2!
. 1 4
DS GS T
V sat V V ( )
2
. 1
ds GS T
I 'N + V V




V-()/5E D+V+DE* &+/, E.+))E* ,)/&+(+4ED
F+EED &+/,
STA,ILITY E/UATIONS

1 / 2 3 c c %$
I S I S V S + +
1 2 3
P P
C C C
C' %$
I I I
S S S
I V



, ,)/&+(+)F F/")-*
( ) 1
1
%
C
S
dI
dI

, must be as small as possible, .ost ideal value %@

,
i
, measured with output shorted

/
C
measured with input shorted

7+ amplifier

:
9
fe
( or
H
P
i
, re P
T
e
V
r
I
P
L
v
e
#
A
r

7B amplifier
1
9 P P
L
v i e
e
#
A , r
r

77 amplifier
( )
:
9 1 P 1 P
ie
V
i
(
A
#
+
( )
1
i fe $ ie
# ( # ( + +
1 !arameter .odel "E

P
1
fe
I
oe )
(
A
(

+

L
V fe
ie
,
A (
(

7B amplifier

P P .
L
i i& I f& V f&
i&
#
# ( A ( A (
(

FET
2
1 2
CC
%
V #
V
# #

+
,
P
$
$ % %$ C
$
V
V V V I
#

( ) ( ) 1 Ae
.
Vcc #c I&
I& #& V&e
+ +
+ +
", amplifier ( )
/
TT P
V m d d d
A g # r , #
"ommon 5ate /mplifier
4
1
s
V m d i
m s
#
A g # ,
g #

+
"ommon Drain
1
P
1
m s
V o
m s m
g #
A ,
g # g

+
*" "oupled /mplifiers
+f cut off fre#uency
1
1
2
f
#C
,
1
1
1
1
tan P
1
f
A
f
f
-
f

_


, _
+

,

# I 4 2/ I S)ope d% octave d% decade

is beta cut off fre#uency where

is

cut off fre#uency where /.'/'

t
f is
1
fe
(
gain bandwidth product.