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Lec 15

The document discusses MOSFET transistors, including their structure, operation, and key characteristics. Specifically: - MOSFETs are three-terminal devices that use a metal gate to control current flow in a channel between a source and drain. Millions can be integrated on a chip. - They come in depletion and enhancement types, with enhancement type generally used. An n-channel enhancement MOSFET structure is described. - Applying a positive voltage to the gate above a threshold voltage forms a conducting channel that allows current to flow between source and drain. - The drain current is initially linear but saturates once the drain-source voltage exceeds the overdrive voltage.

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Mohammed Ahmad Osama
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127 views9 pages

Lec 15

The document discusses MOSFET transistors, including their structure, operation, and key characteristics. Specifically: - MOSFETs are three-terminal devices that use a metal gate to control current flow in a channel between a source and drain. Millions can be integrated on a chip. - They come in depletion and enhancement types, with enhancement type generally used. An n-channel enhancement MOSFET structure is described. - Applying a positive voltage to the gate above a threshold voltage forms a conducting channel that allows current to flow between source and drain. - The drain current is initially linear but saturates once the drain-source voltage exceeds the overdrive voltage.

Uploaded by

Mohammed Ahmad Osama
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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30-Apr-14

1
Electronic Devices and
Circuits
Lecture 15
MOS Field-Effect Transistors
(MOSFETs)
Usman Younis
MOSFETs Introduction
MOSFET = Metal Oxide Semiconductor Field Effect
Transistor
Three terminal device
MOSFETS are much popular in IC design where the entire
transistor logic is implemented on a single Silicon chip
MOSFET require small areas on ICs, and their fabrication is
relatively simple as compared to BJTs
Their operations require low powers
All these properties enable millions of MOSFETs to be
fabricated on a single IC chip to implement very-large-
scale-integrated (VLSI) circuits, such as microprocessors
and memory chips
30-Apr-14
2
Usman Younis
MOSFETs Device Structure
MOSFETs can be of two types when characterized by
their physical structure:
Depletion Type MOSFET
Remain in on-state at zero gate voltage
Enhancement Type MOSFET
Remain in off-state at zero gate voltage
Generally enhancement type MOSFETs are used
Usman Younis
MOSFETs
Device Structure
nchannel enhancement
type MOSFET
Typical length L = 30 nm to
1 m, Width W = 100 nm to
100 m. Oxide layer
thickness is in 1 to 10 nm
30-Apr-14
3
Usman Younis
MOSFET
Another name for the MOSFET is the insulated-gate FET or
IGFET
This insulation causes the current in the gate terminal to be
extremely small (of the order of 10
15
A)
Substrate/body forms pn junctions with the source and drain
regions, which are kept reverse-biased at all times in normal
operations
A voltage applied to the gate controls current flow between
source and drain
Current flows in the longitudinal direction from drain to
source in the channel region
MOSFET is a symmetrical device, its source and drain can be
interchanged with no change in device characteristics
Usman Younis
Device Structure
Applying +ve potential at
the gate causes the
majority concentration
holes to be pushed
downwards, thus
creating a negatively
charged space charge
region (ionized acceptor
atoms)
Secondly, the +ve
potential attracts the
electrons from source
and drain to form a thin
n-channel (under gate)
which is available for
conduction
30-Apr-14
4
Usman Younis
Device Structure
The structure is thus called n-channel MOSFET or NMOS
The value of V
GS
at which sufficient electrons are
available to form the conduction channel is called
threshold voltage V
t
V
t
is in the range of 0.3 V to 1 V
Gate electrode along with the
channel beneath is a capacitor,
where the oxide layer acts as a
dielectric
The accumulated +ve charge on
the electrode and ve charge in
the channel causes an electric
field thus the name field
effect transistor
Usman Younis
MOSFET Capacitance
The gate electrode along with the channel underneath is a
parallel plate capacitor
If an excess voltage V
GS
above V
t
is applied, then
capacitance can given as

ox
= 3.9
0
= 3.9 8.854 10
12
= 3.45 10
11
F/m
ox
ox
ox OV ox
OV t GS
t
C where V WL C Q
V V V

= =
=
, ) ( | |
Over-drive voltage
Permittivity of SiO
2
Thickness of SiO
2
30-Apr-14
5
Usman Younis
Current Flow
We assume a small V
DS
above the threshold
voltage in order to
have uniform
application of field
across the channel
The electron flow is
from source to drain,
however, the
conventional current is
from drain to source
Usman Younis
MOSFET Drain Current
The charge per unit length of the channel is
The voltage V
DS
creates a field E across the channel length in
order to cause the electrons to drift from source to drain
Finally, the drain current i
D
is the charge per unit channel
length electron drift velocity
OV ox
V W C
L
Q
channel the of length
Q
) (
| | | |
= =
L
V
E velocity drift Electron and
L
V
E
DS
n n
DS
= = = | | , | |
DS t GS ox n DS OV ox n D
V V V
L
W
C V V
L
W
C i
(

\
|
=
(

\
|
= ) (
30-Apr-14
6
Usman Younis
Channel Conductance
The channel conductance can be given as:
This conductance depends upon:

n
C
ox
(process transconductance parameter A/V
2
) electron
mobility and oxide conductance both are physical parameters
defined by the process technology used.
W/L (aspect ratio) - for a given fabrication process the channel
length is limited to some standard, e.g., the 2009 state-of-the-
art commercially available MOS technology has 45 nm minimum
possible channel length
The product of process transconductance parameter and aspect
ratio is called MOSFET transconductance parameter k
n

\
|
= =
OV ox n DS DS DS D
V
L
W
C g where V g i ,
|

\
|
=
L
W
C k
ox n n

Usman Younis
MOSFET Linear Resistance
For a small V
DS
, MOSFET acts as a liner resistor
) )( / )( (
1
) / )( (
1 1
t GS ox n OV ox n DS
DS
V V L W C V L W C g
r

= = =

30-Apr-14
7
Usman Younis
Applying V
DS
OV t GS
V V V + =
DS OV t GD
V V V V + = ) (
Usman Younis
Applying V
DS
Application of V
DS
will make the
channel thinner on
the drain side as
compared to the
source side this
causes a linear
voltage drop across
the channel
Since V
GD
is greater than
V
t
, the channel still exist
at the drain side
30-Apr-14
8
Usman Younis
Applying V
DS
The drain current is proportional to the charge accumulated
in the channel and its cross-sectional area, whereas this
area depends upon the applied voltage V
OV
V
DS
DS DS OV ox n D
V V V
L
W
C i
(

\
|
|

\
|
=
2
1

Usman Younis
Applying V
DS
>= V
OV
Channel pinch-off
30-Apr-14
9
Usman Younis
Applying V
DS
>= V
OV
Increasing V
DS
beyond V
OV
saturates the
drain current: 2
2
OV
ox n D
V
L
W
C i
|

\
|
=
MOSFET is termed to have entered in saturation region
{which is equivalent to that of active region in case of BJT}
t GS OV Dsat
V V V V = =
It should be noted
that channel pinch-
off does not mean
channel blockage,
and current
continues to flow

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