Fermi Surface III

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Chapter Nine Fermi surfaces and Metals

To get band structure of real crystals, turns on weak periodic potential.


Band gaps open up at BZ edges.
To calculate electronic properties, put in electrons (Fermions).
fill them up to Fermi energy
F
.
At T=0, the Fermi surface separates the unfilled orbits from the filled orbits.
The electrical properties of the metal are determined by the shape of the
Fermi surface, because the current is due to change in the occupancy of
states near the Fermi surface.
Aluminum (v=3)
Copper (v=1)
Zone 2 Zone 3 Zone 1 Zone 1
-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

k(2/a)
(
2
h
2
/2ma
2
)
1
9
25
1D chain
4
16
Extended-zone scheme
1 1 2 3 4 5 2 5 4 3
k
/a -/a
-1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0

k(/a)
(
2
h
2
/2ma
2
)
1
4
9
16
25
Reduced-zone scheme
Free electrons (k) :
modulated by lattice
periodicity
All in the first BZ.
-1.0
-0.5
0.0
0.5
1.0
0.0
0.5
1.0
1.5
2.0
-1.0
-0.5
0.0
0.5
1.0
E
(

2
h
2
/
2
m
a
2
)
k
y
(

/
a
)
k
x
(

/
a
)
Two dimensional square lattice
Construction of Brillouin zones : bisect all G
1 1 2 3 4 5 2 5 4 3
/a -/a
1D
k
2D
1
2a
2d
2b
2c
3
3a
3 3
3d
3
3 3
k
x
k
y translate region into 1st zone by G
to form reduced zones
1st zone
3a
3d
3rd zone
2a
2c
2d
2b
2nd zone
Construction of free electron Fermi surface
1
2
2
2
2
3
3
3 3
3
3
3 3
k
x
k
y
k
F
1st zone
Fully occupied
2nd zone
3a
3d
The shaded regions are filled with
electrons and are lower in energy
than the unshaded regions.
3rd zone
electron-like
hole-like
One electron per primitive cell v=1
Free electron
+ weak periodic Potential
So the Fermi surface is extended
toward the zone boundary as it get
closer.
constant
With the crystal potential,
the energy inside the first Brillouin zone
is lower close to the zone boundary.
Fermi surface
[010]
[100]
Fermi surface is distorted
from a sphere
near the zone boundary.
BCC Li
A cusp is caused by interaction
Two electrons per primitive cell v=2
1st band Fermi surface
Free electron
[110]
2nd band Fermi surface
[100]
(1) k
F
<< k
BZ
No dispersion
Constant contours are spheres.
k
F
a

BZ boundary
k
F
(2) k
F
<~ k
BZ
Fermi surface bulges toward BZ boundary
f
r
e
e

e
l
e
c
t
r
o
n

k
0
/a
k
F
k > k
F
K bulges toward
BZ boundary
due to dispersion.
a

(3) k = k
BZ
Bragg scatterings open energy gap
0 (k)
1
v(k)
k
= =
h
at zone boundary. Standing waves
(4) k > k
BZ
electron states in second or higher bands
corresponding to higher order Brillouin zones of k space.
Nearly free electrons
The interaction of the electron with periodic potential of the crystal
causes energy gaps at the zone boundary.
Fermi surfaces will intersect zone boundaries perpendicularly.
The crystal potential will round out sharp corners in the Fermi surface.
Fermi surface: surface in k-space separates filled and unfilled states
Only metals have Fermi surfaces.
Important because electronic properties depend on electron states near
F
within k
B
T
T )k D(
3

C
2
B F
2
e
=
) D( v e
3
1
F
2
F
2
=
T L =
Heat capacity
Electric conductivity
Thermal conductivity
Volume of Fermi surface only depends on conduction electron density.
Shape of Fermi surface depends on strength of periodic potential and
size of k
F
relative to k
BZ
h
r
r
v
k
g

= Density of states depends on (k) , actually
State number between and +d in band
In two dimensions, uniform in k-space
L
) k ( D
|
|

|
=
2
2
. \
kdk 2 ) k D( dk )dk k D( )d D(
y x
r r
= =
+d

=

=
g
v
d
dk
d
d
dk
dk
dkk
h
Area of k-space


|
.
|

\
|
=

1
dk
2
L
2 ) D(
k
2
Therefore,
path integral along constant contour
In three dimensions, uniform in k-space
L
) k ( D
|
|

|
=
3
2
. \


|
.
|

\
|
=

1
dS
2
L
2 ) D(
k
3
area integral over constant surface
P
Q
R

D()
P
Q
R

D()
multiple peaks
Crystal is not cubic,
[100]
[010]
Crystal is cubic,
How to determine the Fermi surface?
Magnetic field response direct probe of the Fermi surface
dt
k d
B v q F
r
h
r
r
r
= =
0 v F =
r
r
Magnetic field drives electrons in k-space along constant contours.
and
Nearly free electron
B
r
dt
k d
F
r
r

v
k

r
electron orbit
B
r
dt
k d
F
r
r

electron orbit
v
k

r
Free electron
hole orbit
dt
k d
F
r
r

B
r
v
k

r
Free hole
hole orbit
Period of orbit
Lorentz force
Period


= =

= = =

1
dk
qB
dt T
dk
B v q
dt B v q
dt
k d
F
k
2
h
r
r
h
r
r
r
h
r
constant

k
k

k
k

k
k

1
=
|
.
|

\
|

|
.
|

\
|

=


) k , S(
qB
k
dk
qB k

dk
qB
z
2 2
1
2

=
|
.
|

\
|

h h h
T Period
and
where S is the k-space area enclosed by the orbit in its plane
Free electron
F
F
v
m
k
v = =
h
( )
m
eB
T
2

eB
m 2
k 2
eBv
T
c
F
F
= =
= =
h
cyclotron
frequency
De Haas-van Effect : oscillation of the magnetic moment of a metal
as a function of magnetic field (1930)
-M/H (10
6
)
Bi (1930)&(1932)
H is along [111] direction noble metal
Bi
R()
Magnetoresistance of Ga
T=1.3K
A
111
(belly)/A
111
(neck)=51 Ag
Calculation of energy bands
The tight-binding method
The Wigner-Seitz method
The pseudopotential method extension of the OPW method
Orthogonalized plane-wave
Push isolated atoms together to form crystal
An isolated atom
very far away
two isolated atoms
Two atoms move closer to each other.
Two energy levels

A
-
B

A
+
B
-6 -4 -2 0 2 4 6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2

A
+
B

A
-
B
r
Solid with N atoms has N allowed energy states.
When more atoms are brought together,
the degeneracies are further split to form
bands ranging from fully bonding to fully
antibonding.
Different orbitals can lead to band overlap.
There are two idealized situations for which wave functions can be
expressed in a simple manner and
an energy band calculation can be carried out with relative case.
Energies are far above the maxima of potential energy.
Nearly Free Electrons
Energies are deep within the potential wells at nuclei.
Tightly Bound Electrons
Influence of the periodic potential depends both on
the magnitude of this potential and on the opportunities for atoms
to interact which varies with the interatomic spacing.
Tight binding method (Linear Combination of Atomic Orbitals)
For an interatomic spacing which permits some overlaps between atoms
(but not very much), the bands can be stimulated.
It is quite good for the inner electrons of atoms, but not for the
conduction electrons.
the d bands of the transition metals
the valence band of diamond-like materials
inert gas crystals
Free atoms s Overlapping s
) r ( E ) r ( ) r U(
2m
) r ( H
k
k
k
2
2
k
atom
r r r h r
r r r
=
(

+ =
Let is the ground state of an electron moving in the potential U(r)
of an isolated atom.
) r (
k
r
r

1952
1905~1983
Tight binding method
introduced by Bloch in 1928
( ) | |

=
j
j k j
j
j
k k k
) r r ( r k exp
N
1

) r r ( C ) r (
j
r r r
r
r r r
r r r

i
N linear combinations
Let is for the electron moving in the whole crystal that contains
N isolated atoms. Atoms are at lattice sites (j=1,.,N)
j
r
r
) r (
k
r
r

A trial wavefunction
( ) | |
( ) ( ) ( ) | |
( ) ) r ( T k exp
) r T r ( T r k exp T k exp
N
1

) r T r ( r k exp
N
1
) T r (
k
j
j
k
j
j
j
k
j
k
r
r r
r
r
r
r
r
r r r
r
r
r r
r r
r
r
r
r r

+ =

+ = +
i
i i
i
satisfying Bloch condition
r-(r
j
-T)
| | ) r ( ) r ( ) r U( H ) r ( H
k
k
k
atom
k
crystal
r r r r
r r r
= + =
Schrdinger equation
Where contains all corrections to the atomic potential required to
produce the full periodic potential of the crystal.
) r U(
r

First order energy


( ) ( )

=
j m
j crystal m m j
k
crystal
k
H r k exp r k exp
N
1
H
r
r
r
r
r r
i i
where and
( )
j j
r r
r r
=
( )
m m
r r
r r
=
) r r U(
n
r r

) r ( U
lattice
r

=
n m
m lattice n
) r r ( U ) r r U(
r r r r
| | ) r r ( ) r U( H ) r r ( dV H
j atom m j crystal m
r r r r r
+

=


( ) ( ) ( ) ( )| |
( ) ( )| | ) r ( ) r U( H r dV k exp
) r ( ) r r U( H r r r dV r r k exp
N
1
H
atom m
m
m
j atom
j m
j m m j
k
crystal
k
r r r r r
r
r r r r r r r r
r
r r


+


=
+ +

i
i
Rewrite the first order energy
) r ( )H r ( dV ) r ( )H r ( dV
atom atom m
r r r r r

on the same atom


) r ( ) r U( ) r ( dV ) r ( ) r U( ) r ( dV ) r ( ) r U( ) r ( dV
m
r r r r r r r r r r r


-
Overlap, up to nearest neighbors
-

m
=0
m
0, n.n.
) r ( )H r ( dV
crystal
r r

( )

= =
n.n.
k crystal k k
k i exp H
r
r
Therefore,
For a simple cubic,
the nearest neighbor atoms = (a, 0,0), (0, a, 0), (0, 0, a)
( )
( ) ( ) ( ) ( ) ( ) ( ) | |
( ) ( ) ( ) | | a k 2cos a k 2cos a k 2cos
a ik - exp a ik exp a ik - exp a ik exp a ik - exp a ik exp
k i exp
z y x
z z y y x x
n.n.
k
+ + =
+ + + + + =

=



r
r
6 6
k
+
Along L, [111]
-
12
An energy band width is 12 .
The weaker the overlap is, the narrower the energy band is.
Constant energy surfaces in the BZ of a SC lattice
( ) ( ) ( ) | | a k cos a k cos a k cos 2
z y x k
+ + =
Reduced zone scheme
Periodic zone scheme
For ka<<1,
...
! 4 ! 2
1 cos
4 2
+ =
x x
x
2 2
2 2
2 2
z
2 2
y
2 2
x
k
a k 6
2
a k
3 2
2
a k
1
2
a k
1
2
a k
1 2



+ =
|
|
.
|

\
|
=
(
(

|
|
.
|

\
|
+
|
|
.
|

\
|
+
|
|
.
|

\
|
=
By series expansion
The constant energy surfaces in the neighborhood of k=0 are spherical.
| |
2 2
2
2
2 2 2
2
2
k
2
2
a 2

dk
a k 6 d
dk
d


h
h h
=
+
= =

m Effective mass
The weaker the overlap is, the narrower the energy band is and
the higher the effective mass is.
For a face-centered cubic,
the nearest neighbor atoms = .5a(1, 1,0), .5a(0, 1, 1), .5a(1, 0, 1)
( )
(

|
.
|

\
|
|
.
|

\
|
+
|
.
|

\
|
|
|
.
|

\
|
+
|
|
.
|

\
|
|
.
|

\
|
=
(
(
(
(

|
.
|

\
|

+
|
.
|

\
|
+
|
.
|

\
|

+
|
|
.
|

\
|
+
|
|
.
|

\
|

+
|
.
|

\
|
=
(
(
(
(
(
(
(

|
.
|

\
|

+
|
.
|

\
|

+
|
.
|

\
|
+
+
|
.
|

\
|
+
+
|
|
.
|

\
|

+
|
|
.
|

\
|

+
|
|
.
|

\
|
+
+
|
|
.
|

\
|
+
+
|
|
.
|

\
|

+
|
|
.
|

\
|

+
|
|
.
|

\
|
+
+
|
|
.
|

\
|
+
=

=
2
a k
cos
2
a k
cos
2
a k
cos
2
a k
cos
2
a k
cos
2
a k
cos 4
2
a ik
exp
2
a ik
exp
2
a k
cos 2
2
a ik
exp
2
a ik
exp
2
a k
cos 2
2
a ik
exp
2
a ik
exp
2
a k
2cos

2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp
2
a ik a ik
exp

k i exp
x z z
y y
x
x x z
z z
y y y
x
x z x z x z x z
z y z y z y z y
y x y x y x y x
n.n.
k




r
r
r- space
The energies
of an s-band in a FCC crystals
k- space
Along [ k
x
=2/a, (01), k
y
=k
z
= 0 ]
( ) | | cos 2 1 4 + =
Along L [ k
x
= k
y
=k
z
= 2/a, (00.5) ]
( )
2
cos 12 =
Along K [ k
x
= k
y
= 2/a, (03/4), k
z
= 0 ]
( ) ( ) | | cos 2 cos 4
2
+ =
quite successful for the weakest type of interaction bet. neighboring atoms
d states
Based upon the Slater-Koster tight-binding calculations, we investigated
electronic properties of the "metallic" single-walled carbon nanotubes
(SWNTs) in detail. Our results show that tube curvature may produce an
energy gap at the Fermi level for zigzag and chiral "metallic" SWNTs, and
this effect decreases with the increasing of either the radius or the chiral
angle. Our calculated results are in good agreement with experiments
Energy gap of the "metallic" single-walled carbon nanotubes
Mod. Phys. Lett. B18, 769 (2004)
Calculations and applications of the complex band structure for
carbon nanotube field-effect transistors PRB70, 045322 (2004)
Using a tight binding transfer matrix method, we calculated the complex
band structure for armchair and zigzag carbon nanotubes (CNTs). The
imaginary part of the complex band structure connecting the conduction and
valence band forms a loop, which can profoundly affect the characteristics of
nanoscale electronic devices made with CNTs. We then study the quantum
transport in carbon nanotube field-effect transistors (CNTFETs) with the
complex band structure effects. A complete picture of the complex band
structure effect on the performance of semiconductor zigzag CNTFETs is
drawn.
The cellular method by Wigner and Seitz in 1933
polyhedron structure in real space
quite successful for the simple alkali metals
1935 Kimball extended to nonmetallic materials such as diamond, Si, Ge,
1963
1902~1995
Wigner-Seitz method
(r) (r) U(r)
2m
k k k
2
2
=
(

+
h
(r) (r)
k
r k
k
u e
i
r
r

=
and Bloch function
( ) (r) (r) U(r) k
2m
1
k k k
2
u u i =
(

+ + h h
start with the easiest-found solution at k=0, u
o
(r) within a single primitive cell
then, construct the approximation solution
Wigner-Seitz
(r) (r)
o
r k
k
u e
i
r
r

=
boundary condition: , are continuous
The first approximation of the cellular method is the replacement of
periodic potential U(r) within the WS primitive cell by a potential V(r)
with spherical symmetry about the origin.
Radial functions for
r (Bohr units)
3S orbital of free Na atom
3S conduction band in metal Na
k=0, metal Na
as r
eigenenergy -5.15eV (atom)
-8.20eV (k=0)
In real metal Na,
2m
k
and ) r ( u
2 2
o k o
r k
k
h r
r
r
+ = =


i
e
average energy
-6.3eV
0eV
Fermi level
metal
1.15eV less
Metal is more
stable than
free atom.
As we know,
F
=3.1eV for Na.
The average KE per e
-
is 0.6
F
=1.86eV
-8.2eV
k=0 state
Two major difficulties with the cellular method :
The computational difficulties involved in numerically satisfying
the boundary condition over the surface of the WS primitive cell.
The cellular method potential has a discontinuous derivative midway
between lattice points but the actual potential is quite flat there.
Later, a modification
muffin-tin potential
Pseudopotential methods
The orthogonalized plane-wave (OPW)
k
valence electrons + core electrons
The theory of pseudopotential began as an extension of OPW method.

+ =

c
c
k c
r k
k
(r) b (r)
i
e
satisfying Bloch condition w/. wavevector k
Outside the core, the potential energy that acts on conduction electron is
relatively weak. Potential due to the singly charged positive ion cores is
reduced markedly by the electrostatic screening of other conduction
electrons.
by C. Herring (1940)
( ) (r) ) r ( ) r ( (r) (r)
c
c
v
k
c v v
k k k k



=

r d
exact valence wave function
and
v
k
v
k
v
k
H =
( ) ( )
(


c
c
v
k
c v
k
c
c
v
k
c v
k k k k k k
) r ( ) r ( H ) r ( ) r ( r d r d H
and
c
k
c
k
c
k
H =
( )
v pseudo 2
2
v v v
R
k k k k
V
2
V H
|
|
.
|

\
|
+ = = +
m
h
adding V
R
to U : partial cancellation
cancellation theorem
( )( )
c
c
k
c c v v
k k k k k
) r ( ) r (



=

r d V
R
effective Schrdinger eq.
The pseudopotential for a problem
is neither unique nor exact.
On Empty Core Model (ECM)
Unscreened potential :
V(r)={
0, for r<R
e
-e
2
/r, for r>R
e
Na
Later, screening effect :
Thomas-Fermi dielectric function
Empirical Pseudopotential Method (EPM) band structure
Coefficients V(G) are deduced from theoretical fits to
measurements of the optical reflectance and absorption of crystal.
Chapter 15.
Charge density map can be plotted from the wavefunctions
generated by the EPM, in excellent agreement with X-ray
diffraction determination,
giving an understanding of the bonding and have great
predictive value for proposed new structures and compounds.
Numerical calculation of band structures using the first-principal
non-local pseudo-potential.
A. Zunger and M.L. Cohen, Phys. Rev. B20, 4082 (1979).
Si W
Numerical calculation of Density of states
Some physical quantities obtained from
numerical calculation and experimental
measurement , respectively.
4.33
4.43
8.10
7.35
3.60
3.57
Diamond
0.73
0.77
4.26
3.85
5.66
5.65
Ge
0.98
0.99
4.84
4.63
5.45
5.43
Si
Bulk
modulus
(Mbar)
Cohesive
energy
(eV)
Lattice
constant
()
APPROACHES
Free atoms
Atomic s
Metallic crystals
Free electrons
Tight-Binding model
Overlapping s
Nearly Free electron model
Free electrons + periodic potential
Essence of
energy gaps /
transport
Essence of
crystal binding
Many body Treatments
Pseudopotentials
Band structures
Full treatment
Experimental methods in Fermi Surface studies
H is along [111] direction noble metal
de Haas-van effect :
Oscillation of the magnetic moment
of a metal as a function of
magnetic field (H). (1930)
A
111
(belly)/A
111
(neck)=51 Ag
Quantization of orbits in a magnetic field
Review:
a charge q of mass m in a magnetic field B
A B where , A
c
q
p
2m
1
H
2
r r r
r
=
|
.
|

\
|
= Hamiltonian
A
c
q
k p p p
field kinetic total
r r
h
r r
v
+ = + =
Total momentum
Bohr-Sommerfeld relation orbits are quantized in a magnetic field

+ =
+ =
r d A
c
q
r d k
2 )
2
1
n ( r d p
total
r
r
r
r
h
h
r r

B r
c
q
k
B
dt
r d
c
q
B v
c
q
dt
k d
r
r
r
h
r
r
r
r
r
h
=
= =
( )
B
= =
= =

c
q
2 n

2(area) B
c
q

r d r B
c
q
r d B r
c
q
r d k
r
r r
r
r
r
r r
r
h
( )
B
a d B
a d A r d A
= =
=


r
r
r
r
v
r
the first term
the second term
h
r r
2
2
1
n
c
q
r d p
B total
|
.
|

\
|
+ = =

2 7
B
m Tesla 10 14 . 4
2
1
n
q
c 2
2
1
n

|
.
|

\
|
+ =
|
.
|

\
|
+ =
h
magnetic flux through the orbit in real space
How about in k- space ?
n
2
n
S
qB
c
A
|
|
.
|

\
|
=
h
k
qB
c
r =
h
q
c 2
2
1
n S
qB
c
B BA
n
2
n B
h h
|
.
|

\
|
+ =
|
|
.
|

\
|
= =
Therefore,
the area of an orbit in k space S
n
is quantized in magnetic field B
B
c
q 2
2
1
n
B
1
c
qB
q
c 2
2
1
n S
2
n
h h
h
|
.
|

\
|
+ =
|
.
|

\
|
|
.
|

\
|
+ =
Different orbits can have the same area by changing magnetic field B.
For instance,
The nth orbit in magnetic field B
n
The (n+1)th orbit in magnetic field B
n+1
c
q 2
2
1
n
B
S
n
h

|
.
|

\
|
+ =
c
q 2
B
1
B
1
S
n 1 n
h

=
|
|
.
|

\
|

+
Equal increments of 1/B reproduce orbits w/ the same area.
Bi, T=1.6K
Steele and
Babiskin,
PR98, (1955)
-M/H (10
6
)
Bi (1930)&(1932)
oscillation of the magnetic moment of a metal as a function of magnetic field
Low temperature and high magnetic field
De Haas-van Effect
Onsager: the change in 1/B through a single period (1/B)
was determined by
where S is any extremal cross-sectional area of the Fermi
surface in a plane normal to magnetic field.
(1952)
S
1
c
q 2
B
1
h

=
|
.
|

\
|

B
c
q 2
2
1
n S
n
h

|
.
|

\
|
+ =
The normal line of the orbital area is along the
direction of magnetic field B.
Quantized of the closed orbits in a magnetic field B. (L.D. Landau)
Free electrons model
an electron in a cubical box of side L in magnetic field B
z

cyclotron frequency
n=1,2,positive integer
mc
eB
where
2
1
n k
2m
) k (
c c
2
z
2
z n
=
|
.
|

\
|
+ = h
h
only need to consider k
x
and k
y
The number of levels with energy for a given n and k
z
( )
c
eB 2 m 2 m 2
k k 2 k
c
2
2
h h h

= = = =
2
2
L
D(k)
|
.
|

\
|
=

B
c 2 c
eB 2
2
L
2
2
h h

eL
=
|
.
|

\
|
|
.
|

\
|
depending on B
the area between
successive orbits
the number of level per unit area
in k-space
in the absence of B in the presence of B
The number of orbital levels on a circle is a constant,
independent of n.
Does Fermi level change with magnetic field B?
States w/. k k
F
are occupied at T=0, N is conserved.
Fermi sphere volume in k-space occupied
by electrons in the ground states

F
B=0
B
1
h
c
s+1

F
partly
filled
s-1
s
empty
B
2
splitting into many Landau levels
g()
s
0.5h
c
increasing
slightly

F
At the critical fields B
s
,
no partly filled level
and
c
2
B
c 2
s N
h
eL
=
How to put electrons in the energy levels?
B
c 2 c
eB 2
2
L
2
2
h h

eL
=
|
.
|

\
|
|
.
|

\
|
The number of levels with energy for a given n
= 0.5B (assumption)
w/o. consideration of spin
In a 2D system with N=50
When all levels are fully occupied from n=1 to s, total energies of e
-
c c

h
h
h
h
B
c 2
eL
2
s
)
2
1
B(n
c 2
eL
2 2
s
1 n
2
=

=
When s+1 level is partly occupied by decreasing B slightly,
Energy for e
-
in s+1 level
Energy for e
-
in the lower levels
)
2
1
s ( B
c 2
eL
s N
2
+
|
|
.
|

\
|

h
h
U(B)
c

h
h
B
c 2
eL
2
s
2 2
Oscillation of total
electronic energy
Magnetic moment at T=0K
B
U

=
cS
e 2
B
1
h

=
|
.
|

\
|

where S is the extremal


area of the Fermi surface
normal to the direction of B
Information of the Fermi surface
shape and size
oscillates.
w/. period
Oscillation of the magnetic moment
De Haas van Alphen effect
What are the extremal areas ?
When magnetic field is along z-axis,
the area of a Fermi surface cross section at height k
z
is S(k
z
), and
the extremal area S
e
are the values of S(k
z
) at the k
z
where
dS/dk
z
=0, stationary wrt. small changes in k
z.
Along k
1
-axis,
three extremal orbits :
(1),(2) area peaks and (3) area dip
Along k
2
-axis,
only one extremal orbit : (4) area peak
Cu, Ag, Au, monovalent metal w/. FCC structure
( )
a
4.90
a
4
3 n 3 k
1/3
3
2
3 / 1
2
F
=
|
.
|

\
|
= =
Fermi surface
FCC lattice BCC reciprocal lattice
The distance between hexagonal faces is
a
10.88
3
a
2
=

The distance between square faces is


a
12.57
2
a
2
=

The Fermi surface does not neck out to meet these faces.
The Fermi surface neck out to meet these faces.
Experimental data on Au by Shoenberg
Period of 1/B for the magnetic moment
1/B
111
=2.0510
-9
gauss
-1
S=4.66 10
16
cm
-2
(belly)
1/B
111
=6.10
-8
gauss
-1
S=1.6 10
15
cm
-2
(neck)
1/B
100
=1.9510
-9
gauss
-1
S=4.90 10
16
cm
-2
a: a closed particle orbit
b: a closed hole orbit
c: an open orbit
S
belly
/S
neck
=29
-6 -4 -2 0 2 4 6
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0

R
x
x

(
k

)
T=0.4K
R
xx
=45/(LT), 5k/ (RT)
n=1.4x10
11
(cm
-2
)
=0.99x10
6
( cm
2
/Vsec)

R
x
y

(
h
/
e
2
)
H (Tesla)
0.0 0.2 0.4 0.6 0.8
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14


2DEG
E
1
energy
E
c
E
F
0.2eV
10 nm, GaAs Cap
15 nm, - doping layer, Si
60 nm, spacer AlGaAs
1500 nm, GaAs
buffer layer
8 nm, spacer AlGaAs
1 2 3 4 5
0.0
0.1
0.2
0.3
T=0.4K


R
x
x

(

)
H
-1
(Tesla
-1
)
2DEG
0.3m
0.45m
0.6m
Source Drain
Quantized Conductance Transport
GaAs/AlGaAs heterostructures
n=1.410
11
/cm
2
=2.210
6
cm
2
/Vs (0.3K)
(Dr.Umansky provided)
Mean free path l=13.6 m
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4
0
1
2
3
4
5
6
7
8
9
10
11
12


G

(
2
e
2
/
h
)
V
SG
(V)
Split gates confined QPC
d
gap
=0.3m and l
channel
=0.5 m
R h

=
|
|
.
|

\
|
=
2900 1
N ;
2e
N G
2
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
0.0
2.0k
4.0k
6.0k
8.0k
10.0k
12.0k
14.0k
16.0k
18.0k
20.0k


R

(

)
V
SG
(V)
1D
2D
T=0.3K

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