kG4FC50U

UllroFosl Spood lG8T

lNSULATED GATE 8lPCLAP TPANSlSTCP
PD T470F
E
C
G
n-channel
TO-247AC
Features Features Features Features Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.65V
@V
GE
= 15V, I
C
= 27A
Parameter Typ. Max. Units
R
JC
Junction-to-Case ---- 0.64
R
CS
Case-to-Sink, Flat, Greased Surface 0.24 ---- C/W
R
JA
Junction-to-Ambient, typical socket mount ---- 40
Wt Weight 6 (0.21) ---- g (oz)
Thermal Resistance
Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 600 V
I
C
@ T
C
= 25C Continuous Collector Current 55
I
C
@ T
C
= 100C Continuous Collector Current 27 A
I
CM
Pulsed Collector Current Q 220
I
LM
Clamped Inductive Load Current R 220
V
GE
Gate-to-Emitter Voltage 20 V
E
ARV
Reverse Voltage Avalanche Energy S 20 mJ
P
D
@ T
C
= 25C Maximum Power Dissipation 200
P
D
@ T
C
= 100C Maximum Power Dissipation 78
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
C
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Absolute Maximum Ratings
W
12/30/00
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Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ---- 180 270 I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on) ---- 25 38 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) ---- 61 90 V
GE
= 15V
t
d(on)
Turn-On Delay Time ---- 32 ----
t
r
Rise Time ---- 20 ---- T
J
= 25C
t
d(off)
Turn-Off Delay Time ---- 170 260 I
C
= 27A, V
CC
= 480V
t
f
Fall Time ---- 88 130 V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss ---- 0.12 ---- Energy losses include "tail"
E
off
Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
E
ts
Total Switching Loss ---- 0.66 0.9
t
d(on)
Turn-On Delay Time ---- 31 ---- T
J
= 150C,
t
r
Rise Time ---- 23 ---- I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ---- 230 ---- V
GE
= 15V, R
G
= 5.0
t
f
Fall Time ---- 120 ---- Energy losses include "tail"
E
ts
Total Switching Loss ---- 1.6 ---- mJ See Fig. 13, 14
L
E
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
C
ies
Input Capacitance ---- 4000 ---- V
GE
= 0V
C
oes
Output Capacitance ---- 250 ---- pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance ---- 52 ---- = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/C V
GE
= 0V, I
C
= 1.0mA
---- 1.65 2.0 I
C
= 27A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage ---- 2.0 ---- I
C
= 55A See Fig.2, 5
---- 1.6 ---- I
C
= 27A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage 3.0 ---- 6.0 V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance U 16 24 ---- S V
CE
15V, I
C
= 27A
---- ---- 250 V
GE
= 0V, V
CE
= 600V
---- ---- 2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25C
---- ---- 5000 V
GE
= 0V, V
CE
= 600V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current ---- ---- 100 nA V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T Pulse width 80s; duty factor 0.1%.
U Pulse width 5.0s, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
kG4FC50U
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Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
0. 1
1
10
100
1000
0 1 10
CE
C
I



,

C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
V , Coll ector-to-Emitter Voltage (V)
T = 1 5 0 C
T = 2 5 C
J
J
A
V = 1 5 V
2 0 s PUL SE W IDTH
GE
1
10
100
1000
4 6 8 10 12
C
I



,

C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
GE
T = 25C
T = 150C
J
J
V , Gate-to-Emi tter Vol tage (V)
A
V = 10V
5s PULSE WIDTH
CC
0
20
40
60
80
0. 1 1 10 100
f, Frequency (kHz)
L
o
a
d

C
u
r
r
e
n
t

(
A
)
A
60% of rated
vol tage
I deal diodes
Squar e wave:
For bo t h:
Dut y c yc le: 50%
T = 125C
T = 90C
Gate dr ive as spec ifi ed
s i nk
J
Power Dis sip atio n = 40W
Tri angular wave:
Clamp voltage:
80% of rated
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1. 0
1. 5
2. 0
2. 5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
C
E
V





,

C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e

(
V
) V = 15V
80s PULSE WIDTH
GE
A
T , Juncti on Temperature (C)
J
I = 54A
I = 27A
I = 14A
C
C
C
0
10
20
30
40
50
60
25 50 75 100 125 150
M
a
x
i
m
u
m

D
C

C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

(
A
)
T , Case Temperature (C)
C
V = 15V
GE
0. 01
0. 1
1
0.00001 0. 0001 0. 001 0. 01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
t
h
J
C
D = 0.5 0
0.01
0.02
0 .0 5
0.1 0
0.2 0
SIN GL E PU LS E
( T H ER MA L R ES PON SE ) T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

(
Z







)
P
t
2
1
t
D M
Not es:
1 . Dut y f act or D = t / t
2. Peak T = P x Z + T
1 2
J DM t hJC C
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Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
2000
4000
6000
8000
1 10 100
CE
C
,

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
V , Col l ector -to-Emitter Vol tage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ie s
C
res
C
oes
G E
i es g e g c c e
r es gc
o es c e g c
0
4
8
12
16
20
0 40 80 120 160 200
G
E
V





,

G
a
t
e
-
t
o
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e

(
V
)
g
Q , Tot al Gat e Char ge ( nC)
A
V = 400V
I = 27A
CE
C
0. 1
1
10
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
A
T , Juncti on Temperature (C)
J
I = 5 4A
I = 2 7A
I = 1 4 A
R = 5 .0
V = 1 5V
V = 4 80 V
C
C
C
G
GE
C C
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1. 8
2. 0
2. 2
0 10 20 30 40 50 60
G
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
R , Gate Resistance (

)
A
V = 480V
V = 15V
T = 25C
I = 27A
CC
GE
J
C
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Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0. 0
1. 0
2. 0
3. 0
0 10 20 30 40 50
C
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
I , Col l ector-to-Emi tt er Current (A)
A
R = 5.0
T = 150C
V = 480V
V = 15V
G
J
CC
GE
1
10
100
1000
1 10 100 1000
C
CE
GE
V , Col lector-to-Emitter Voltage (V)
I



,

C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
SAFE OPERATING AREA
V = 20V
T = 125C
GE
J
kG4FC50U
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480V
4 X I
C
@25C
D.U.T.
50V
L
V *
C
Q
R
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated I d.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480F
960V
0 - 480V
RL =



t=5s d (o n)
t
t
f t r
90%
t
d(o ff )
10%
90%
10%
5%
V
C
I
C
E
o n
Eo f f
t s o n off
E = ( E +E )
Q
R
S
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
Q
R S
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
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Cose Outline ond Dimensions ~ TO-247AC
Dime n si on s i n Mi ll ime t e rs a n d (I n ch es )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5 .30 ( .20 9)
4 .70 ( .18 5)
3. 65 ( .1 43 )
3. 55 ( .1 40 )
2.50 ( . 089)
1.50 ( . 059)
4
3X
0.80 ( .03 1)
0.40 ( .01 6)
2 .60 ( .10 2)
2 .20 ( .08 7)
3. 40 ( .1 3 3)
3. 00 ( .1 1 8)
3 X
0.25 ( . 010) M C A S
4.30 ( .1 70)
3.70 ( .1 45)
- C -
2X
5.5 0 ( .2 17)
4.5 0 ( .1 77)
5.5 0 ( .2 17)
0. 25 ( .01 0)
1.40 ( . 056)
1.00 ( . 039)
D M M B
- A -
15 .90 ( .6 26)
15 .30 ( .6 02)
- B -
1 2 3
20 .30 (.8 00)
19 .70 (.7 75)
14 .80 ( . 583 )
14 .20 ( . 559 )
2. 40 ( .094)
2. 00 ( .079)
2 X
2 X
5. 45 ( .2 15 )
*
NOTES:
1 DIMENSIONS & T OLERANCING
PER ANSI Y14.5M, 1982.
2 CONTR OLLIN G DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETER S (IN CHES).
4 CONFORMS TO JEDEC OUTLINE
T O-247AC .
LEAD ASSIGNMENT S
1 - GAT E
2 - COLLECTOR
3 - EMIT TER
4 - COLLECTOR
*
LONGER LEADED (20m m)
VERSION AVAILABLE ( TO- 247AD)
T O ORDER ADD "-E" SU FF IX
T O PART NUMBER
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.