MADANAPALLE INSTITUTE OF TECHNOLOGY & SCIENCE

ANGALLU, MADANAPALLE 517 325

ELECTRONIC DEVICES & CIRCUITS

LABORATORY MANUAL











DEPARTMENT

OF

ELECTRONICS & COMMUNICATION ENGINEERING

JULY 2012
MADANAPALLE INSTITUTE OF TECHNOLOGY & SCIENCE
ANGALLU, MADANAPALLE 517 325



































MITS MITS/ECE

LAB WISE - LAB MANUALS DEPARTMENT : ECE





ELECTRONIC DEVICES & CIRCUITS

LABORATORY MANUAL





DEPARTMENT

OF

ELECTRONICS & COMMUNICATION ENGINEERING

JULY 2012
Electronic Devices & Circuits Lab Manual


LIST OF EXPERIMENTS



LI ST OF EXPERI MENTS AS PER J NTUA, ANANTAPUR

1. P-N JUNCTION DIODE CHARACTERISTICS 2

2. ZENER DIODE CHARACTERISTICS 6

3. CB CHARACTERSTICS OF A TRANSISTOR 9

4. CE CHARACTERSTICS OF A TRANSISTOR 13
5. HALF-WAVE RECTIFIER WITH & WITHOUT FILTER 17
6. FULL-WAVE RECTIFIER WITH & WITHOUT FILTER 21
7. FET CHARACTERISTICS 24
8. h-PARAMETERS OF CE CONFIGURATION 27
9. TRANSISTOR CE AMPLIFIER 33
10. TRANSISTOR CC AMPLIFIER 37
11. COMMON SOURCE (FET) AMPLIFIER 41
12. SILICON-CONTROLLED RECTIFIER (SCR) CHARACTERISTICS 44
13. UJT CHARACTERISTICS 47
ADDI TI ONAL EXPERIMENTS

14. RC COUPLED AMPLIFIER 50
15. RC PHASE SHIFT OSCILLATOR 54
16. BRIDGE RECTIFER 58
17. CURRENT-SERIES FEEDBACK AMPLIFIER 61
18. VOLTAGE-SERTES FEEDBACK AMPLIFIER 65














Dept. of ECE, MITS
1
Electronic Devices & Circuits Lab Manual



1. P-N JUNCTION DIODE CHARACTERISTICS



AIM: To observe and draw the Forward and Reverse bias V-I Characteristics of a P-N
Junction diode.

APPARATUS:

P-N Diode 1N4007

Regulated Power supply (0-15V)

Resistor 1K

Ammeters (0-200mA, 0-200A)

Voltmeter (0-20V)

Breadboard
Connecting wires

THEORY:

A p-n junction diode conducts only in one direction. The V-I characteristics of the
diode are curve between voltage across the diode and current through the diode. When
external voltage is zero, circuit is open and the potential barrier does not allow the current to
flow. Therefore, the circuit current is zero. When P-type (Anode is connected to +ve terminal
and n- type (cathode) is connected to ve terminal of the supply voltage, is known as forward
bias. The potential barrier is reduced when diode is in the forward biased condition. At some
forward voltage, the potential barrier altogether eliminated and current starts flowing through
the diode and also in the circuit. The diode is said to be in ON state. The current increases
with increasing forward voltage.

When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected

ve terminal of the supply voltage is known as reverse bias and the potential barrier across
the junction increases. Therefore, the junction resistance becomes very high and a very small
current (reverse saturation current) flows in the circuit. The diode is said to be in OFF state.
The reverse bias current is due to the minority charge carriers.












Dept. of ECE, MITS
2
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:

FORWARD BIAS:




















REVERSE BIAS:











































Dept. of ECE, MITS
3
Electronic Devices & Circuits Lab Manual



MODEL GRAPH:































PROCEDURE:

FORWARD BIAS:

1. Connections are made as per the circuit diagram.

2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS ve is
connected to the cathode of the diode,

3. Switch on the power supply and increases the input voltage (supply voltage) in steps.

4. Note down the corresponding current flowing through the diode and voltage across
the diode for each and every step of the input voltage.

5. The reading of voltage and current are tabulated.

6. Graph is plotted between voltage and current.
















Dept. of ECE, MITS
4
Electronic Devices & Circuits Lab Manual



OBSERVATIONS:

S.NO V
f
(V) I
f
(mA)
















PROCEDURE:

REVERSE BIAS:

1. Connections are made as per the circuit diagram.

2. For reverse bias, the RPS +ve are connected to the cathode of the diode and RPS ve
is connected to the anode of the diode.

3. Switch on the power supply and increase the input voltage (supply voltage) in steps

4. Note down the corresponding current flowing through the diode voltage across the
diode for each and every step of the input voltage.

5. The readings of voltage and current are tabulated

6. Graph is plotted between voltage and current.


OBSEVATIONS:

S.NO V
r
(V) I
r
(mA)
















RESULT: Forward and Reverse Bias characteristics for a p-n diode is observed



Dept. of ECE, MITS
5
Electronic Devices & Circuits Lab Manual



2. ZENER DIODE CHARACTERISTICS



AIM: To observe and draw the regulator characteristics of a zener diode at supply and load

side.

APPARATUS:

Zener diode ECZ5V1

Regulated Power Supply (0-15V)

Voltmeter (0-20V)

Ammeter (0-200mA)

Resistor (1K)

Breadboard

Connecting wires

THEORY:

A zener diode is heavily doped p-n junction diode, specially made to operate in the
break down region. A p-n junction diode normally does not conduct when reverse biased. But
if the reverse bias is increased, at a particular voltage it starts conducting heavily. This
voltage is called Break down Voltage. High current through the diode can permanently
damage the device. To avoid high current, we connect a resistor in series with zener diode.
Once the diode starts conducting it maintains almost constant voltage across the terminals
whatever may be the current through it, i.e., it has very low dynamic resistance. It is used in
voltage regulators.

CIRCUIT DIAGRAM:

SUPPLY SIDE:


















Dept. of ECE, MITS
6
Electronic Devices & Circuits Lab Manual



LOAD SIDE:

















PROCEDURE:
SUPPLY SIDE:

1. Connections are made as per the circuit diagram.

2. The Regulated power supply voltage is increased in steps.
3. For different input voltages (V
i
) corresponding output voltages (V
o
) are observed and
then noted in the tabular form.
4. A graph is plotted between input voltage (V
i
) and the output voltage (V
o
).


LOAD SIDE:

1. Connection are made as per the circuit diagram
2. The load is placed in full load condition and the output voltage (V
o
), load current (I
L
)
are measured.
3. The above step is repeated by decreasing the value of the load in steps.
4. All the readings are tabulated and a graph is plotted between load current (I
L
) and the
output voltage (V
o
).


OBSERVATIONS:-
SUPPLY SIDE:-


S.NO V
i
(V) V
o
(V)



Dept. of ECE, MITS
7
Electronic Devices & Circuits Lab Manual



LOAD SIDE:-

S.NO I
L
(V) V
o
(V)




MODEL GRAPH:
SUPPLY SIDE:




















LOAD SIDE:




















RESULT: Regulator characteristics of zener diode are obtained and graphs are plotted for
load and supply side.




Dept. of ECE, MITS
8
Electronic Devices & Circuits Lab Manual



3. CB CHARACTERSTICS OF A TRANSISTOR



AIM: To observe and draw the input and output characteristics of a transistor connected in
common base configuration.


APPARATUS:

NPN-Transistor, BC107

Regulated Power Supply (0-15V)

Voltmeter (0-20V)

Ammeters (0-200mA)

Resistor, 1K

Breadboard

Connecting wires


THEORY:

A transistor is a three terminal active device. The terminals are emitter, base,
collector. In CB configuration, the base is common to both input (emitter) and output
(collector). For normal operation, the E-B junction is forward biased and C-B junction is
reverse biased.
In CB configuration, I
E
is +ve, I
C
is ve and I
B
is ve. So,
V
EB=
f1 (V
CB,
I
E
) and

IC=f2 (VCB,IB)

With an increasing the reverse collector voltage, the space-charge width at the output
junction increases and the effective base width W decreases. This phenomenon is known
as Early effect. Then, there will be less chance for recombination within the base region.
With increase of charge gradient with in the base region, the current of minority carriers
injected across the emitter junction increases. The current amplification factor of CB
configuration is given by,
= I
C
/ I
E









Dept. of ECE, MITS
9
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:
























PROCEDURE:

INPUT CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage V
CE
is kept constant at 0V and
for different values of V
EB
note down the values of I
E
.
3. Repeat the above step keeping V
CB
at 2V, 4V, and 6V.All the readings are tabulated.
4. A graph is drawn between V
EB
and I
E
for constant V
CB.



OUTPUT CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input I
E
is kept constant at 10mA and for
different values of V
CB
, note down the values of I
C.

3. Repeat the above step for the values of I
E
at 20 mA, 40 mA, and 60 mA, all the readings
are tabulated.
4. A graph is drawn between V
CB
and I
C
for constant I
E













Dept. of ECE, MITS
10
Electronic Devices & Circuits Lab Manual



OBSERVATIONS:

INPUT CHARACTERISTICS:


V
CB=
0V V
CB=
1V V
CB
=2V

S.No


V
EB
(V) I
E(
mA) V
EB
(V) I
E(
mA) V
EB
(V) I
E(
mA)









OUTPUT CHARACTERISTICS:


I
E=
2mA I
E=
4mA I
E
=6mA


S.No



V
CB
(V) I
C(
mA) V
CB
(V) I
C(
mA) V
CB
(V) I
C(
mA)











Dept. of ECE, MITS
11
Electronic Devices & Circuits Lab Manual



MODEL GRAPHS:

INPUT CHARACTERISTICS:


























OUTPUT CHARACTERISTICS:
























RESULT: The input and output characteristics of the transistor are drawn.












Dept. of ECE, MITS
12
Electronic Devices & Circuits Lab Manual



4. CE CHARACTERSTICS OF A TRANSISTOR


AIM: To draw the input and output characteristics of transistor connected in CE

configuration


APPARATUS:

NPN-Transistor (BC107)

Regulated Power Supply (0-15V)

Voltmeters (0-20V)

Ammeters (0-200A), (0-200mA)

Resistors 1K

Breadboard

Connecting wires


THEORY:

A transistor is a three terminal device. The terminals are emitter, base, collector. In
common emitter configuration, input voltage is applied between base and emitter terminals
and output is taken across the collector and emitter terminals. Therefore the emitter terminal
is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As compared to
CB arrangement I
B
increases less rapidly with V
BE.
Therefore input resistance of CE circuit
is higher than that of CB circuit.
The output characteristics are drawn between I
c
and V
CE
at constant I
B.
the collector
current varies with V
CE
unto few volts only. After this the collector current becomes almost
constant, and independent of V
CE.
The value of V
CE
up to which the collector current
changes with V
CE
is known as Knee voltage. The transistor always operated in the region
above Knee voltage, I
C
is always constant and is approximately equal to I
B.


The current amplification factor of CE configuration is given by
= I
C
/I
B









Dept. of ECE, MITS
13
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:





















PROCEDURE:

INPUT CHARECTERSTICS:

1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage V
CE
is kept constant at 1V
and for different values of V
BE.
Note down the values of I
C

3. Repeat the above step by keeping V
CE
at 2V and 4V.

4. Tabulate all the readings.
5. plot the graph between V
BE
and I
B
for constant V
CE



OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram
2. for plotting the output characteristics the input current I
B
is kept constant at 10A and
for different values of V
CE
note down the values of I
C


3. repeat the above step by keeping IB at 75 A, 100 A

4. tabulate the all the readings
5. plot the graph between V
CE
and I
C
for constant I
B














Dept. of ECE, MITS
14
Electronic Devices & Circuits Lab Manual



OBSERVATIONS:

INPUT CHARACTERISTICS:


V
CE
= 1V V
CE
= 2V V
CE
= 4V
S.NO
V
BE
(V) I
B
(A) V
BE
(V) I
B
(A) V
BE
(V) I
B
(A)




OUTPUT CHARACTERISTICS:


I
B
= 50 A I
B
= 75 A I
B
= 100 A
S.NO
V
CE
(V) I
C
(mA) V
CE
(V) I
C
(mA) V
CE
(V) I
C
(mA)



Dept. of ECE, MITS
15
Electronic Devices & Circuits Lab Manual



MODEL GRAPHS:

INPUT CHARACTERSTICS:

























OUTPUT CHARECTERSTICS:


























RESULT: The input and output characteristics of a transistor in CE configuration are
drawn








Dept. of ECE, MITS
16
Electronic Devices & Circuits Lab Manual



5. HALF WAVE RECTIFIER WITH & WITHOUT FILTER


AIM: To obtain the % regulation and ripple factor of a half wave rectifier with and without

filter.


APPARATUS:

AC Supply 12V

PN Diode, 1N4007

Capacitor, 470F

Variable Resistor (0-10) K

Connecting wires

Breadboard

Multimeter


THEORY:

During positive half-cycle of the input voltage, the diode D1 is in forward bias and
conducts through the load resistor R1. Hence the current produces an output voltage across
the load resistor R1, which has the same shape as the +ve half cycle of the input voltage.
During the negative half-cycle of the input voltage, the diode is reverse biased and there is no
current through the circuit. i.e., the voltage across R1 is zero.

The net result is that only the +ve half cycle of the input voltage appears across the
load. The average value of the half wave rectified o/p voltage is the value measured on dc
voltmeter. For practical circuits, transformer coupling is usually provided for two reasons.

1. The voltage can be stepped-up or stepped-down, as needed.

2. The ac source is electrically isolated from the rectifier. Thus preventing shock hazards
in the secondary circuit.
















Dept. of ECE, MITS
17
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAMS:

WITHOUT FILTER:
















WITH FILTER:















PROCEDURE:

1. Connections are made as per the circuit diagram.

2. Connect the primary side of the transformer to ac mains and the secondary side to the
rectifier input.

3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at
the output of the rectifier.

4. Find the theoretical of dc voltage by using the formula,


V
dc
=V
m
/


Where, V
m
=2Vrms, (V
rms
=output ac voltage.)

The Ripple factor is calculated by using the formula
r=ac output voltage/dc output voltage.





Dept. of ECE, MITS
18
Electronic Devices & Circuits Lab Manual



REGULATION CHARACTERSTICS:

1. Connections are made as per the circuit diagram.

2. By increasing the value of the rheostat, the voltage across the load and current flowing
through the load are measured.

3. The reading is tabulated.
4. Draw a graph between load voltage (V
L
and load current ( I
L
) taking V
L
on X-axis and
I
L
on y-axis

5. From the value of no-load voltages, the % regulation is calculated using the formula,


OBSERVATIONS:

WITHOUT FILTER:


R
L
Vac Vdc Ripple Factor % Regulation
(K) (Volts) (Volts) = V
ac
/ V
dc
(V
NL
-V
FL
)/V
FL
*100






WITH FILTER:


RL Vac Vdc Ripple Factor % Regulation
(K) (Volts) (Volts) = Vac/ Vdc (V
NL
-V
FL
)/V
FL
*100



Dept. of ECE, MITS
19
Electronic Devices & Circuits Lab Manual



MODEL GRAPHS:

HALFWAVE RECTIFIER (WITH & WITHOUT FILTER):





































RESULT: The Ripple factor and % regulation for the Half-wave Rectifier with and without
filters is measured.
























Dept. of ECE, MITS
20
Electronic Devices & Circuits Lab Manual



6. FULL WAVE RECTIFIER WITH & WITHOUT FILTER


AIM: To find the Ripple factor and regulation of a Full-wave Rectifier with and without

filter.

APPARATUS:

AC Supply (12V-0-12V)

PN Diodes 1N4007

Capacitor 470F

Connecting Wires

Variable resistor (0-10) K

Breadboard

Multimeter

THEORY:

The circuit of a center-tapped full wave rectifier uses two diodes D1&D2. During
positive half cycle of secondary voltage (input voltage), the diode D1 is forward biased and
D2is reverse biased. The diode D1 conducts and current flows through load resistor R
L
.
During negative half cycle, diode D2 becomes forward biased and D1 reverse biased. Now,
D2 conducts and current flows through the load resistor R
L
in the same direction. There is a
continuous current flow through the load resistor R
L
, during both the half cycles and will get
unidirectional current as show in the model graph. The difference between full wave and half
wave rectification is that a full wave rectifier allows unidirectional (one way) current to the
load during the entire 360 degrees of the input signal and half-wave rectifier allows this only
during one half cycle (180 degree).


CIRCUIT DIAGRAM:

WITHOUT FILTER:
















Dept. of ECE, MITS
21
Electronic Devices & Circuits Lab Manual



WITH FILTER:















PROCEDURE:

1. Connections are made as per the circuit diagram.

2. Connect the ac mains to the primary side of the transformer and the secondary side to
the rectifier.

3. Measure the ac voltage at the input side of the rectifier.

4. Measure both ac and dc voltages at the output side the rectifier.
5. Find the theoretical value of the dc voltage by using the formula V
dc
=2V
m
/
6. Connect the filter capacitor across the load resistor and measure the values of V
ac
and
V
dc
at the output.

7. The theoretical values of Ripple factors with and without capacitor are calculated.
8. From the values of V
ac
and V
dc
practical values of Ripple factors are calculated. The
practical values are compared with theoretical values.


OBSERVATIONS:
WITHOUT FILTER:

R
L
Vac Vdc Ripple Factor % Regulation
(Ohms) (Volts) (Volts) = V
ac
/ V
dc
(V
NL
-V
FL
)/V
FL
*100











Dept. of ECE, MITS
22
Electronic Devices & Circuits Lab Manual



WITH FILTER:

RL Vac Vdc Ripple Factor % Regulation
(Ohms) (Volts) (Volts) = V
ac
/ V
dc
(V
NL
-V
FL
)/V
FL
*100




MODEL GRAPHS:

FULLWAVE RECTIFIER (WITH & WITHOUT FILTER):
































RESULT:

The ripple factor of the Full-wave rectifier (with filter and without filter) is calculated.












Dept. of ECE, MITS
23
Electronic Devices & Circuits Lab Manual



7. FET CHARACTERISTICS


AIM: To draw the drain and transfer characteristics of a given FET.

APPARATUS:

JFET (BFW11)

Regulated Power Supply (0-15V)

Voltmeter (0-20V)

Ammeter (0-200mA)

Breadboard

Connecting wires

THEORY:

A FET is a three terminal device, having the characteristics of high input impedance and
less noise, the Gate to Source junction of the FET s always reverse biased. In response to small
applied voltage from drain to source, the n-type bar acts as sample resistor, and the drain current
increases linearly with V
DS.
With increase in I
D
the ohmic voltage drop between the source and
the channel region reverse biases the junction and the conducting position of the channel begins
to remain constant. The V
DS
at this instant is called pinch of voltage.

If the gate to source voltage (V
GS
) is applied in the direction to provide additional
reverse bias, the pinch off voltage ill is decreased. In amplifier application, the FET is always
used in the region beyond the pinch-off.
F
DS
= I
DSS
(1-V
GS
/V
P
)^2

CIRCUIT DIAGRAM:
























Dept. of ECE, MITS
24
Electronic Devices & Circuits Lab Manual



PROCEDURE:

1. All the connections are made as per the circuit diagram.
2. To plot the drain characteristics, keep V
GS
constant at 0V.
3. Vary the V
DD
and observe the values of V
DS
and I
D
.
4. Repeat the above steps 2, 3 for different values of V
GS
at 0.1V and 0.2V.

5. All the readings are tabulated.
6. To plot the transfer characteristics, keep V
DS
constant at 1V.
7. Vary V
GG
and observe the values of V
GS
and I
D
.
8. Repeat steps 6 and 7 for different values of V
DS
at 1.5 V and 2V.

9. The readings are tabulated.


OBSERVATIONS:

DRAIN CHARACTERISTICS:


V
GS
=0V V
GS
=-1V V
GS
=-2V
S.NO
V
DS
(V) I
D
(mA) V
DS
(V) I
D
(mA) V
DS
(V) I
D
(mA)




TRANSFER CHARACTERISTICS:


V
DS
=0.5V V
DS
=1V V
DS
=1.5V
S.NO
V
GS
(V) I
D
(mA) V
GS
(V) I
D
(mA) V
GS
(V) I
D
(mA)



Dept. of ECE, MITS
25
Electronic Devices & Circuits Lab Manual



MODEL GRAPH:

DRAIN CHARACTERISTICS:





























TRANSFER CHARACTERISTICS:































RESULT: The drain and transfer characteristics of a FET are drawn.

Dept. of ECE, MITS
26
Electronic Devices & Circuits Lab Manual



8. h-PARAMETERS OF CE CONFIGURATION


AIM: To calculate the h-parameters of a transistor in CE configuration.


APPRATUS:

Transistor BC 107

Resistors 100 K , 100

Ammeter (0-200A), (0-200mA)

Voltmeter (0-20V) - 2Nos

Regulated Power Supply (0-30V, 1A) - 2Nos

Breadboard

THEORY:


INPUT CHARACTERISTICS:


The two sets of characteristics are necessary to describe the behavior of the CE
configuration one for input or base emitter circuit and other for the output or collector
emitter circuit.

In input characteristics the emitter base junction forward biased by a very small
voltage V
BB
whereas collector base junction reverse biased by a very large voltage V
CC
.
The input characteristics are a plot of input current I
B
V
s
the input voltage V
BE
for a range
of values of output voltage V
CE
. The following important points can be observed from
these characteristics curves.

1. The characteristics resemble that of CE configuration.
2. Input resistance is high as I
B
increases less rapidly with V
BE


3. The input resistance of the transistor is the ratio of change in base emitter voltage
V
BE
to change in base current I
B
at constant collector emitter voltage ( V
CE)
i.e...
Input resistance or input impedance hie = V
BE
/ I
B
at V
CE
constant.





Dept. of ECE, MITS
27
Electronic Devices & Circuits Lab Manual



OUTPUT CHARACTERISTICS:


A set of output characteristics or collector characteristics are a plot of out put current
I
C
V
S
output voltage V
CE
for a range of values of input current I
B
.The following important
points can be observed from these characteristics curves:-

The transistor always operates in the active region. I.e. the collector current

I
C
increases with V
CE
very slowly. For low values of the V
CE
the I
C
increases rapidly
with a small increase in V
CE
.The transistor is said to be working in saturation region.

Output resistance is the ratio of change of collector emitter voltage V
CE ,
to change in
collector current I
C
with constant I
B.
Output resistance or Output impedance hoe = V
CE
/
I
C
at I
B
constant.

1. Input Impedance hie = V
BE
/ I
B
at V
CE
constant
2. Output impedance hoe = V
CE
/ I
C
at I
B
constant
3. Reverse Transfer Voltage Gain hre = V
BE
/ V
CE
at I
B
constant
4. Forward Transfer Current Gain hfe = I
C
/ I
B
at constant V
CE



CIRCUIT DIAGRAM:


































Dept. of ECE, MITS
28
Electronic Devices & Circuits Lab Manual



PROCEDURE:


1. Connect a transistor in CE configuration circuit for plotting its input and output
characteristics.
2. Take a set of readings for the variations in I
B
with V
BE
at different fixed values of
output voltage V
CE.


3. Plot the input characteristics of CE configuration from the above readings.
4. From the graph calculate the input resistance h
ie
and reverse transfer ratio h
re
by
taking the slopes of the curves.
5. Take the family of readings for the variations of I
C
with V
CE
at different values of
fixed I
B.


6. Plot the output characteristics from the above readings.
7. From the graphs calculate h
fe
and h
oe
by taking the slope of the curves.


TABULAR FORMS:


INPUT CHARACTERISTICS:


V
CE
=0V V
CE
=6V
S.NO
V
BE
(V) I
B
(A) V
BE
(V) I
B
(A)



Dept. of ECE, MITS
29
Electronic Devices & Circuits Lab Manual



OUTPUT CHARACTERISTICS:



I
B
= 20 A I
B
= 40 A I
B
= 60 A
S.NO
V
CE
(V) I
C
(mA) V
CE
(V) I
C
(mA) V
CE
(V) I
C
(mA)




MODEL GRAPHS:


INPUT CHARACTERISTICS:




































Dept. of ECE, MITS
30
Electronic Devices & Circuits Lab Manual






























OUTPUT CHARACTERISTICS:







































Dept. of ECE, MITS
31
Electronic Devices & Circuits Lab Manual





























RESULT:


The H-Parameters for a transistor in CE configuration are calculated from the input
and output characteristics.
1. Input Impedance h
ie
=
2. Reverse Transfer Voltage Gain h
re
=
3. Forward Transfer Current Gain h
fe
=
4. Output conductance h
oe
=


























Dept. of ECE, MITS
32
Electronic Devices & Circuits Lab Manual



9. TRANSISTOR CE AMPLIFIER


AIM:

a. To Measure the voltage gain of a CE amplifier

b. To draw the frequency response curve of the CE amplifier


APPARATUS:

Transistor BC107

Regulated Power Supply (0-15V)

Function Generator

CRO

Resistors - 10K, 1K, 4.7K

Variable Resistor 100K

Capacitors 22F, 47F

Breadboard

Connecting Wires


THEORY:

The CE amplifier provides high gain &wide frequency response. The emitter lead is
common to both input & output circuits and is grounded. The emitter-base circuit is forward
biased. The collector current is controlled by the base current rather than emitter current. The
input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current.

When +VE half-cycle is fed to the input circuit, it opposes the forward bias of the
circuit which causes the collector current to decrease, it decreases the voltage more VE.
Thus when input cycle varies through a -VE half-cycle, increases the forward bias of the
circuit, which causes the collector current to increases thus the output signal is common
emitter amplifier is in out of phase with the input signal.









Dept. of ECE, MITS
33
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:





























PROCEDURE:

1. Connect the circuit as shown in circuit diagram

2. Apply the input of 20mV peak-to-peak and 50Hz frequency using function generator.
3. Measure the Output Voltage V
O
(p-p).

4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression A
v
= (V
0
/V
i
)

6. For plotting the frequency response the input voltage is kept Constant at 20mV peak-to-
peak and the frequency is varied from 50Hz to 1MHz Using function generator.

7. All the readings are tabulated and voltage gain in dB is calculated by using the expression
A
v
=20 log
10
(V
0
/V
i
)

8. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis on Semi-log
graph.


The band width of the amplifier is calculated from the graph using the
expression, Bandwidth, BW=f
2
-f
1

Where f
1
lower cut-off frequency of CE amplifier,
and Where f
2
upper cut-off frequency of CE amplifier



Dept. of ECE, MITS
34
Electronic Devices & Circuits Lab Manual



The bandwidth product of the amplifier is calculated using the expression
Gain Bandwidth product = (3dB mid-band gain) X (Bandwidth)


OBSERVATIONS:

FREQUENCY RESPONSE:


Frequency (Hz) Input voltage (v
i
)
Output Gain in dB

voltage (v
0
) A
v
= 20 log
10
(v
0
/v
i
)











MODEL WAVEFORMS:

INPUT WAVEFORM:




























Dept. of ECE, MITS
35
Electronic Devices & Circuits Lab Manual



OUTPUT WAVEFORM:


















FREQUENCY RESPONSE:

















RESULT:

The voltage gain and frequency response of the CE amplifier are obtained. Also gain
bandwidth product of the amplifier is calculated.

























Dept. of ECE, MITS
36
Electronic Devices & Circuits Lab Manual



9. TRANSISTOR CC AMPLIFIER


AIM:

a. To measure the voltage gain of a CC amplifier

b. To draw the frequency response of the CC amplifier


APPRATUS:

Transistor BC107

Regulated Power Supply (0-15V)

Function Generator

CRO

Resistors - 1K, 33K, 2.2K

Variable Resistor (0-100) K

Capacitors - 22F

Breadboard

Connecting wires


THEORY:



In common-collector amplifier the input is given at the base and the output is taken at
the emitter. In this amplifier, there is no phase inversion between input and output. The
input impedance of the CC amplifier is very high and output impedance is low. The voltage
gain is less than unity. Here the collector is at ac ground and the capacitors used must have
a negligible reactance at the frequency of operation. This amplifier is used for impedance
matching and as a buffer amplifier. This circuit is also known as emitter follower.

















Dept. of ECE, MITS
37
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:































PROCEDURE:

1. Connect the circuit as shown in circuit diagram

2. Apply the input of 20mV peak-to-peak and 50Hz frequency using function generator.
3. Measure the Output Voltage V
O
(p-p).

4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression A
v
= (V
0
/V
i
)

6. For plotting the frequency response the input voltage is kept Constant at 20mV peak-to-
peak and the frequency is varied from 50Hz to 1MHz Using function generator.

7. All the readings are tabulated and voltage gain in dB is calculated by using the expression
A
v
=20 log
10
(V
0
/V
i
)

8. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis on Semi-log
graph.


The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth BW=f
2
-f
1

Where f
1
is lower cut-off frequency of CC amplifier
f
2
is upper cut-off frequency of CC amplifier

Dept. of ECE, MITS
38
Electronic Devices & Circuits Lab Manual



The gain Bandwidth product of the amplifier is calculated using the expression,
Gain -Bandwidth product = (3dB mid-band gain) X (Bandwidth)


OBSERVATIONS:

FREQUENCY RESPONSE:


Gain in dB
Frequency (Hz) Input Voltage (Vi) Output Voltage ( V0)
A
v
= 20*log
10
(V
o
/V
i
)

























MODEL WAVEFORMS:

INPUT WAVEFORM:
























Dept. of ECE, MITS
39
Electronic Devices & Circuits Lab Manual



OUTPUT WAVEFORM:



















FREQUENCY RESPONSE:
















RESULT:

The voltage gain and frequency response of the CC amplifier are obtained. Also gain
Bandwidth product is calculated.

























Dept. of ECE, MITS
40
Electronic Devices & Circuits Lab Manual



11. COMMON SOURCE (FET) AMPLIFIER


AIM: To find the frequency response and bandwidth of agiven single stage FET amplifier.


APPARATUS:

JFET - BFW11

Resistors - 1 K, 10 K, 10 K, 470

Capacitors - 1 F, 0.01 F, 47 F/40V

Regulated Power Supply (0-15V)

Signal Generator

CRO

THEORY:

A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless (signals). The device can amplify analog
or digital signals. It can also switch DC or function as an oscillator. In the FET, current flows
along a semiconductor path called the channel. At one end of the channel, there is an
electrode called the source. At the other end of the channel, there is an electrode called the
drain. The physical diameter of the channel is fixed, but its effective electrical diameter can
be varied by the application of a voltage to a control electrode called the gate. Field-effect
transistors exist in two major classifications. These are known as the junction FET (JFET)
and the metal-oxide- semiconductor FET (MOSFET). The junction FET has a channel
consisting of N-type semiconductor (N-channel) or P-type semiconductor (P-channel)
material; the gate is made of the opposite semiconductor type. In P-type material, electric
charges are carried mainly in the form of electron deficiencies called holes. In N-type
material, the charge carriers are primarily electrons. In a JFET, the junction is the boundary
between the channel and the gate. Normally, this P-N junction is reverse-biased (a DC
voltage is applied to it) so that no current flows between the channel and the gate. However,
under some conditions there is a small current through the junction during part of the input
signal cycle. The FET has some advantages and some disadvantages relative to the bipolar
transistor. Field-effect transistors are preferred for weak-signal work, for example in wireless,
communications and broadcast receivers. They are also preferred in circuits and systems
requiring high impedance. The FET is not, in general, used for high-power amplification,



Dept. of ECE, MITS
41
Electronic Devices & Circuits Lab Manual



such as is required in large wireless communications and broadcast transmitters.


CIRCUIT DIAGRAM:



























PROCEDURE:

1. As per the design specifications, connect the circuit as shown.

2. Set the frequency of I/P signal at 5 KHz and increase the amplitude, till O/P gets
distorted. The value of I/P signal is maximum signal handling capacity.

3. Set I/P signal at a constant value, less than the maximum signal handling capacity,
vary frequency in the range 50Hz to 1MHz and find O/P voltage for each and every
frequency.

4. Calculate voltage gain at each and every frequency.
5. Plot the frequency versus gain and determine f
H
and f
L
.
6. Calculate bandwidth f
H
- f
L
.

7. Procedure for measuring input impedance: Set the signal generator frequency at 2KHz
and measure V
s
and V
i
. Then I
i
= V
s
- V
i
/ R
S
.
I/P impedance = V
i
/ I
i


8. Procedure for measuring O/P impedance: Open the O/P circuit and measure voltage
(V open) across O/P using CRO. After connecting variable resistor at O/P terminals,
vary the resistance to make the O/P (V open) become to half of its value. Then



Dept. of ECE, MITS
42
Electronic Devices & Circuits Lab Manual



existing resistance is its O/P resistance.


OBSERVATIONS:


Gain in dB
S. No Frequency (Hz) O/P voltage (V0) Gain (V0/ VI)
20*log
10
(V
0
/ V
I
)











MODEL WAVEFORMS:













FREQUENCY PLOT:
A graph is plotted between f on X axis and 20*log
10
(V
0
/ V
I
) on Y-axis on a semi-
log sheet. It will be as shown in figure.
BW = f
H
f
L
















RESULT: The frequency response curve for a common source FET Amplifier is plotted and
its bandwidth is obtained.



Dept. of ECE, MITS
43
Electronic Devices & Circuits Lab Manual



12. SILICON CONTROLLED RECTIFIER (SCR) CHARACTERISTICS


AIM: To draw the V-I Characteristics of SCR


APPARATUS:


SCR - TYN616

Regulated Power Supply (0-15V)

Resistors 10k, 1k

Ammeter (0-200) mA

Voltmeter (0-20V)

Bread Board

Connecting Wires

THEORY:


It is a four layer semiconductor device being alternate of P-type and N-type silicon. It
consists of 3 junctions J
1
, J
2
, J
3
the J
1
and J
3
operate in forward direction and J
2
operates in
reverse direction and three terminals called anode A, cathode K, and a gate G. The
operation of SCR can be studied when the gate is open and when the gate is positive with
respect to cathode.















When gate is open, no voltage is applied at the gate due to reverse bias of the junction
J
2
no current flows through R
2
and hence SCR is at cutt off. When anode voltage is
increased J
2
tends to breakdown. When the gate positive, with respect to cathode J
3
junction
is forward biased and J
2
is reverse biased .Electrons from N-type material move across
junction J
3
towards gate while holes from P-type material moves across junction J
3
towards
cathode. So gate current starts flowing, anode current increase is in extremely small current

Dept. of ECE, MITS
44
Electronic Devices & Circuits Lab Manual


junction J
2
break down and SCR conducts heavily. When gate is open thee break-over
voltage is determined on the minimum forward voltage at which SCR conducts heavily.
Now most of the supply voltage appears across the load resistance. The holding current is
the maximum anode current gate being open, when break over occurs.

CIRCUIT DIAGRAM:

























PROCEDURE:


1. Connections are made as per circuit diagram.

2. Keep the gate supply voltage at some constant value

3. Vary the anode to cathode supply voltage and note down the readings of voltmeter and
ammeter. Keep the gate voltage at standard value.
4. A graph is drawn between V
AK
and I
AK
.


OBSERVATIONS:


S.No V
AK
(V) I
AK
( A)












Dept. of ECE, MITS
45
Electronic Devices & Circuits Lab Manual



MODEL GRAPH:
























RESULT:


SCR Characteristics are observed.






































Dept. of ECE, MITS
46
Electronic Devices & Circuits Lab Manual



13. UJT CHARACTERISTICS


AIM: To observe the characteristics of UJT and to find the negative resistance region.


APPARATUS:

Regulated Power Supply (0-15V)

UJT 2N2646

Resistors 10k, 47, 330

Multimeter

Breadboard

Connecting Wires

THEORY:


A Uni-junction Transistor (UJT) is an electronic semiconductor device that has only
one junction. The UJT Uni-junction Transistor (UJT) has three terminals, an emitter (E) and
two bases (B1 and B2). The base is formed by lightly doped n-type bar of silicon. Two
ohmic contacts B1 and B2 are attached at its ends. The emitter is of p-type and it is heavily
doped. The resistance between B1 and B2, when the emitter is open-circuit is called inter-
base resistance. The original uni-junction transistor, or UJT, is a simple device that is
essentially a bar of N type semiconductor material into which P type material has been
diffused somewhere along its length. The 2N2646 is the most commonly used version of the
UJT.














Circuit symbol


The UJT is biased with a positive voltage between the two bases. This causes a
potential drop along the length of the device. When the emitter voltage is driven


Dept. of ECE, MITS
47
Electronic Devices & Circuits Lab Manual



approximately one diode voltage above the voltage at the point where the P diffusion
(emitter) is, current will begin to flow from the emitter into the base region. Because the
base region is very lightly doped, the additional current (actually charges in the base region)
causes (conductivity modulation) which reduces the resistance of the portion of the base
between the emitter junction and the B2 terminal.

This reduction in resistance means that the emitter junction is more forward biased,
and so even more current is injected. Overall, the effect is a negative resistance at the
emitter terminal. This is what makes the UJT useful, especially in simple oscillator circuits.
When the emitter voltage reaches V
p
, the current starts to increase and the emitter voltage
starts to decrease. This is represented by negative slope of the characteristics which is
referred to as the negative resistance region, beyond the valley point; R
B1
reaches minimum
value and this region, V
EB
proportional to I
E.


CIRCUIT DIAGRAM:




























PROCEDURE:


1. Connection is made as per circuit diagram.

2. Output voltage is fixed at a constant level and by varying input voltage corresponding
emitter current values are noted down.


Dept. of ECE, MITS
48
Electronic Devices & Circuits Lab Manual



3. This procedure is repeated for different values of output voltages.
4. All the readings are tabulated and a graph is plotted between V
EE
and I
E
for different
values of V
BE.


MODEL GRAPH:


























OBSEVATIONS:

V
BB
=1V V
BB
=2V V
BB
=3V

S.No

V
EB
(V) I
E
(mA) V
EB
(V) I
E
(mA) V
EB
(V) I
E
(mA)








RESULT:

The characteristics of UJT are observed and the values of Intrinsic Stand-Off Ratio
are calculated.







Dept. of ECE, MITS
49
Electronic Devices & Circuits Lab Manual



14. RC COUPLED AMPLIFIER



AIM:

1. To calculate voltage gain,

2. To observe frequency response.

APPARATUS:

NPN Transistor BC107

Resistors - 3.3K, 33K, 330, 1K

Capacitors - 100uF, 10uF

Bread Board,

Regulated power supply (0-15V),

CRO

THEORY:

This is most popular type of coupling as it provides excellent audio fidelity. A
coupling capacitor is used to connect output of first stage to input of second stage.
Resistances R
1
, R
2
, R
E
form biasing and stabilization network. Emitter bypass capacitor
offers low reactance paths to signal coupling Capacitor transmits ac signal, blocks DC.
Cascade stages amplify signal and overall gain is increased total gain is less than product of
gains of individual stages. Thus for more gain coupling is done and overall gain of two
stages equals to A = A
1
* A
2

A
1
= voltage gain of first stage
A
2
= voltage gain of second stage.

When ac signal is applied to the base of the transistor, its amplified output appears
across the collector resistor R
C
. It is given to the second stage for further amplification and
signal appears with more strength. Frequency response curve is obtained by plotting a graph
between frequency and gain in dB .The gain is constant in mid frequency range and gain
decreases on both sides of the mid frequency range. The gain decreases in the low
frequency range due to coupling capacitor C
C
and at high frequencies due to junction
capacitance C
BE
.






Dept. of ECE, MITS
50
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:





























PROCEDURE:

1. Apply input by using function generator to the circuit.

2. Observe the output waveform on CRO.

3. Measure the voltage at

a. Output of first stage

b. Output of second stage.

4. From the readings calculate voltage gain of first stage, second stage and overall gain of

two stages. Disconnect second stage and then measure output voltage of first stage

and calculate voltage gain.

5. Compare it with voltage gain obtained when second stage was connected.

6. Note down various values of gain for different frequencies.

7. A graph is plotted between frequency and voltage gain.













Dept. of ECE, MITS
51
Electronic Devices & Circuits Lab Manual



OBSERVATIONS:



Frequency (Hz) I/P Voltage (V
i
) O/P Voltage (V
o
)
Voltage Gain

A
V
= 20 log
10
(V
o
/V
i
) dB








MODEL WAVEFORMS:

INPUT WAVEFORM:















FIRST STAGE OUTPUT:






















Dept. of ECE, MITS
52
Electronic Devices & Circuits Lab Manual



SECOND STAGE OUTPUT:















FREQUENCY RESPONSE:



















RESULT:

Thus voltage gain is calculated and frequency response is observed along with
loading affect.

























Dept. of ECE, MITS
53
Electronic Devices & Circuits Lab Manual



15. RC PHASE SHIFT OSCILLATOR




AIM: To calculate the frequency of the RC phase shift oscillator & to measure the phase
angles at different RC sections.


APPARATUS:

Transistor BC107

Resistors - 10K, 8K or 10K, 22K, 1.2K, 100K

Capacitors - 0.001f, 10F, 1f

Regulated power Supply (0-15V)

CRO


THEORY:



RC-Phase shift Oscillator has a CE amplifier followed by three sections of RC phase
shift feedback Networks the output of the last stage is return to the input of the amplifier.
The values of R and C are chosen such that the phase shift of each RC section is 60.Thus
The RC ladder network produces a total phase shift of 180 between its input and output
voltage for the given frequencies.

Since CE Amplifier produces 180 phases shift the total phase shift from the base of
the transistor around the circuit and back to the base will be exactly 360 or 0. This satisfies
the Barkhausen condition for sustaining oscillations and total loop gain of this circuit is
greater than or equal to 1, this condition used to generate the sinusoidal oscillations. The
frequency of oscillations of RC-Phase Shift Oscillator is,















Dept. of ECE, MITS
54
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:































PROCEDURE:


1. Make the connection as per the circuit diagram as shown above.
2. Observe the output signal and note down the output amplitude and time period (T
d
).
3. Calculate the frequency of oscillations theoretically and verify it practically (f=1/T
d
).
4. Calculate the phase shift at each RC section by measuring the time shifts (T
p
) between
the final waveform and the waveform at that section by using the below formula.


OBSERVATIONS:


THEORITICAL CALCULATIONS:

.

R = 10K, C = 0.001 f





Dept. of ECE, MITS
55
Electronic Devices & Circuits Lab Manual



PRACTICAL CALCULATIONS:


T
d
=

1)
2)
3)


MODEL WAVE FORMS:

OUT PUT WAVEFORM:














OUT PUT WAVEFORM: = 60
0















OUT PUT WAVEFORM: = 120
0

















Dept. of ECE, MITS
56
Electronic Devices & Circuits Lab Manual


OUT PUT WAVEFORM: = 180
0


















RESULT:

The frequency of RC phase shift oscillator is calculated and the phase shift at different
RC sections is noted.











































Dept. of ECE, MITS
57
Electronic Devices & Circuits Lab Manual



16. BRIDGE RECTIFER




AIM: To calculate the ripple factor of a bridge rectifier, with and without filters.


APPARATUS:

Breadboard

Diodes, 1N4007

Variable Resistor, (0-10) K

Capacitor 470F

Multimeter

Connecting Wires


THEORY:



The bridge rectifier is also a full-wave rectifier in which four p-n diodes are connected
in the form of a bridge fashion. The Bridge rectifier has high efficiency when compared to
half-wave rectifier. During every half cycle of the input, only two diodes will be conducting
while other two diodes are in reverse bias.


CIRCUIT DIAGRAM:

WITHOUT FILTER:
























Dept. of ECE, MITS
58
Electronic Devices & Circuits Lab Manual



WITH FILTER:
















PROCEDURE:

1. Connections are made as per the circuit diagram.

2. Connect the ac main to the primary side of the transformer and secondary side to the
bridge rectifier.

3. Measure the ac voltage at the input of the rectifier using the multi meter.

4. Measure both the ac and dc voltages at the output of the Bridge rectifier.

5. Find the theoretical value of dc voltage by using the formula.


OBSERVATIONS:

WITHOUT FILTER:


R
L
Vac Vdc Ripple Factor % Regulation
(KOhms) (Volts) (Volts) = V
ac
/ V
dc
(V
NL
-V
FL
)/V
FL
*100




WITH FILTER:


R
L
Vac Vdc Ripple Factor % Regulation
(KOhms) (Volts) (Volts) = V
ac
/ V
dc
(V
NL
-V
FL
)/V
FL
*100



Dept. of ECE, MITS
59
Electronic Devices & Circuits Lab Manual



MODEL WAVEFORM:






























RESULT: The Ripple factor of Bridge rectifier is with and without filter calculated.




































Dept. of ECE, MITS
60
Electronic Devices & Circuits Lab Manual



17. CURRENT-SERIES FEEDBACK AMPLIFIER




AIM: To measure the voltage gain of current - series feedback amplifier.


APPARATUS:


NPN Transistor BC107

Breadboard

Regulated Power Supply (0-15V)

Function Generator

CRO

Resistors 33k, 3.3k, 330, 1.5k, 2.2k , 4.7k , 1 k

Capacitors 10F, 100F


THEORY:


When any increase in the output signal results into the input in such a way as to cause
the decrease in the output signal, the amplifier is said to have negative feedback. The
advantages of providing negative feedback are that the transfer gain of the amplifier with
feedback can be stabilized against variations in the hybrid parameters of the transistor or the
parameters of the other active devices used in the circuit. The most advantage of the
negative feedback is that by using this, there is significant improvement in the frequency
response and in the linearity of the operation of the amplifier. This disadvantage of the
negative feedback is that the voltage gain is decreased. In Current-Series Feedback, the
input impedance and the output impedance are increased. Noise and distortions are reduced
considerably.















Dept. of ECE, MITS
61
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:































PROCEDURE:

1. Connections are made as per circuit diagram.

2. Keep the input voltage constant at 20mV peak-peak and 1 KHz frequency. For
different values of load resistance, note down the output voltage and calculate the
gain by using the expression

3. A
v
= 20*log
10
(V
0
/ V
i
) dB


4. Remove the emitter bypass capacitor and repeat STEP 2.And observe the effect of
feedback on the gain of the amplifier.

5. For plotting the frequency the input voltage is kept constant at 20mV peak-peak and
the frequency is varied from 100Hz to 1MHz.

6. Note down the value of output voltage for each frequency. All the readings are

tabulated and the voltage gain in dB is calculated by using expression A
v
= 20log (V
0

/ V
i
) dB




Dept. of ECE, MITS
62
Electronic Devices & Circuits Lab Manual



7. A graph is drawn by taking frequency on X-axis and gain on Y-axis on semi log
graph sheet

8. The Bandwidth of the amplifier is calculated from the graph using the expression
Bandwidth B.W = f
2
f
1
.

9. Where f
1
is lower cutoff frequency of CE amplifier

10. f
2
is upper cutoff frequency of CE amplifier


11. The gain-bandwidth product of the amplifier is calculated by using the expression
Gain-Bandwidth Product = (3dB mid-band gain) X (Bandwidth).

OBSERVATIONS:

VOLTAGE GAIN:

Output Voltage Output Voltage
Gain(dB) with
Gain(dB)

S.NO (V
o
) with (V
o
) without without

feedback


feedback feedback feedback









FREQUENCY RESPONSE:


S.NO Frequency (Hz)
Output Voltage (V
o
) Gain A = V
o
/V
i

Gain in dB


20log
10
(V
o
/V
i
)









Dept. of ECE, MITS
63
Electronic Devices & Circuits Lab Manual



MODEL WAVEFORM:





































FREQUENCY RESPONSE:

















RESULT:


The effect of negative feedback (Current-Series Feedback) on the amplifier is
observed. The voltage gain and frequency response of the amplifier are obtained. Also gain-
bandwidth product of the amplifier is calculated.

Dept. of ECE, MITS
64
Electronic Devices & Circuits Lab Manual



18. VOLTAGE-SERTES FEEDBACK AMPLIFIER




AIM: To study the effect of voltage series feedback on gain of the Amplifier.


APPARATUS:


NPN-Transistor BC107

Breadboard

Regulated Power Supply (0-15V)

Function Generator

CRO

Resistors 33k, 3.3k, 1.5k, 1k, 2.2k , 4.7k , 330

Capacitors 10F, 100F


THEORY:



When any increase in the output signal results into the input in such a way as to cause
the decrease in the output signal, the amplifier is said to have negative feedback. The
advantages of providing negative feedback are that the transfer gain of the amplifier with
feedback can be stabilized against variations in the hybrid parameters the transistor or the
parameters of the other active devices used in the circuit.

The most advantage of the negative feedback is that by using this, there is significant
improvement in the frequency response and in the linearity of the operation of the amplifier.
This disadvantage of the negative feedback is that the voltage gain is decreased. In Voltage-
Series feedback, the input impedance of the amplifier is decreased and the output
impedance is increased. Noise and distortions are reduced considerably.














Dept. of ECE, MITS
65
Electronic Devices & Circuits Lab Manual



CIRCUIT DIAGRAM:































PROCEDURE:

1. Connections are made as per circuit diagram.

2. Keep the input voltage constant at 20mV peak-peak and 1kHz frequency.For different
values of load resistance, note down the output voltage and calculate the gain by using
the expression
A
v
= 20*log
10
(V
0
/ V
i
) dB

3. Add the emitter bypass capacitor and repeat STEP 2.And observe the effect of
Feedback on the gain of the amplifier

4. For plotting the frequency the input voltage is kept constant at 20mV peak-peak and
the frequency is varied from 100Hz to 1MHz.

5. Note down the value of output voltage for each frequency. All the readings are

tabulated and the voltage gain in dB is calculated by using expression
A
v
= 20log(V
0
/ V
i
) dB

6. A graph is drawn by taking frequency on X-axis and gain on Y-axis on semi log
graph sheet

7. The Bandwidth of the amplifier is calculated from the graph using the expression



Dept. of ECE, MITS
66
Electronic Devices & Circuits Lab Manual


Bandwidth B.W = f
2
f
1
.

Where f
1
is lower cutoff frequency of CE amplifier

f
2
is upper cutoff frequency of CE amplifier


The gain-bandwidth product of the amplifier is calculated by using the expression
Gain-Bandwidth Product = (3dB mid-band gain) X (Bandwidth).

OBSERVATIONS:

VOLTAGE GAIN:



Output Voltage Output Voltage (V
o
) Gain(dB) with
Gain(dB)

S.NO without

(V
o
) with feedback without feedback feedback


feedback







FRQUENCY RESPONSE:


S.NO Frequency (Hz) Output Voltage (V
o
) Gain A = V
o
/V
i

Gain in dB

20*log
10
(V
o
/V
i
)








Dept. of ECE, MITS
67
Electronic Devices & Circuits Lab Manual



MODEL WAVEFORMS:






































RESULT:


The effect of negative feedback (Voltage - Series Feedback) on the amplifier is
observed. The voltage gain and frequency response of the amplifier are obtained. Also gain-
bandwidth product of the amplifier is calculated.



















Dept. of ECE, MITS
68