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Mosfet Transistor Equations: University of Edinburgh EE4 Electrical Engineering

The document contains information about MOSFET transistor equations, small signal parameters, noise equations, physical constants, MOSFET capacitances, a generic CMOS process parameters, SPICE syntax and models. It provides the key electrical characteristics, parameters and equations for modeling and simulating MOS transistors and basic CMOS circuits.

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Shachi P Gowda
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73 views5 pages

Mosfet Transistor Equations: University of Edinburgh EE4 Electrical Engineering

The document contains information about MOSFET transistor equations, small signal parameters, noise equations, physical constants, MOSFET capacitances, a generic CMOS process parameters, SPICE syntax and models. It provides the key electrical characteristics, parameters and equations for modeling and simulating MOS transistors and basic CMOS circuits.

Uploaded by

Shachi P Gowda
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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University of Edinburgh

EE4
LSI Circuits

Electrical Engineering

MOSFET TRANSISTOR EQUATIONS


n-type V DS K' W I D = --------- V GS V t -------- V ( 1 + V DS ) L 2 DS K' W I D = --------- ( V V t ) 2 ( 1 + V DS ) 2 L GS V t = V t 0 + ( ( V BS ) ) p-type V DS K' W I D = --------- V GS V t -------- V ( 1 V DS ) L 2 DS K' W I D = --------- ( V V t ) 2 ( 1 V DS ) 2 L GS V t = V t 0 ( ( + V BS ) ) both (in saturation) 2 ID W ---- -------------------------------L K' ( V GS V t ) 2 V GS 2 ID L V t + ----------K' W n type V GS 2 ID L V t ----------K' W p type linear saturation 0 > VDS > VGS - Vt VDS < VGS - Vt VGS < Vt VGS < Vt linear saturation 0 < VDS < VGS - Vt VDS > VGS - Vt VGS > Vt VGS > Vt

Small signal parameters of MOSFETs in Saturation - assuming | VDS | << 1


nMOS Transconductance g m = ( V GS V t ) ( 1 + V DS ) 2 ID g m 2 I D ---------------------V GS V t Bulk transconductance gm g mb = ---------------------------2 V BS 2 g ds = ------ ( V GS V t ) 2 g ds I D pMOS g m = ( V GS V t ) ( 1 V DS ) gm 2 ID gm g mb = ---------------------------2 + V BS 2 g ds = ------ ( V GS V t ) 2 g ds I D

Drain conductance

Other Useful Equations


K = 0 C OX n = 2 ( kT q ) ln ( N D n i )
18 September 1994
Modified 1/12/08

= K(W L) p = 2 ( kT q ) ln ( n i N A )
D. Renshaw

C OX = OX t OX = ( 2 Si qN ) C OX

VE = 1 ( L )

page 1 of 5

[email protected]:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm

University of Edinburgh

EE4
LSI Circuits

Electrical Engineering

NOISE, PHYSICAL CONSTANTS & MOS CAPACITANCE


Noise Equations
4 kT S iR = -------R 8 kTg m ( 1 + ) S iRS = --------------------------------3 S if
AF K F I DQ = ---------------fC ox L 2

thermal thermal 1/f noise

ohmic saturation both where g mb = -------gm

Miscellaneous Physical Constants & Other Process Information


Symbol q k 0 Si ox Eg Value 1.610-19 1.3810-23 8.8510-12 11.70 3.90 1.16 Units coulombs joule/Kelvin farad/meter farad/meter farad/meter Volts Tnom ni Nsub_n Nsub_p AF KF Symbol 27 1.451010 91015 71015 1 10-28 farad*amps Value C cm-3 cm-3 cm-3 Units

MOSFET Capacitances (where : Leff = L - 2LD )


Region Cut-off
CGC CGD CGS CBG CBD CBS 0 CoxWLD CoxWLD CoxWLeff AD Cj + PDCjSW AS Cj + PSCjSW

Saturation
CoxWLeff CoxWLD CoxW(LD + 2Leff / 3) 0 AD Cj + PDCjSW AS Cj + PSCjSW + 2WLeff Cj / 3

Ohmic
CoxWLeff CoxW(LD + Leff / 2) CoxW(LD + Leff / 2) 0 AD Cj + PDCjSW + WLeff Cj / 2 AS Cj + PSCjSW + WLeff Cj / 2

where

Cj0 C j = C j ( V ) = -------------------------n (1 V )

V = V BD or V = V BS or V = V BC

1 1 and n = -- -3 2

18 September 1994
Modified 1/12/08

D. Renshaw
[email protected]:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm

page 2 of 5

University of Edinburgh

EE4
LSI Circuits

Electrical Engineering

GENERIC CMOS PROCESS - Electrical Characteristics


Transistor Characteristics
Parameter Vt0 Transistor n p K n p Value +1.0 -1.0 35 14 0.8 0.7 0.01 0.02 0.7 0.6 500 200 4 (8) 8 (4)

20%
Units V V

Interlayer Capacitances
Layers poly-diff gateoverlap capacitance poly-subs diff-subs Value 0.7 0.3 0.02 0.2 0.4 diff-subs in well M2 - subs M2 - diff M2 - poly M2 - M1 M1 - subs M1 - diff M1 - poly well 0.3 0.5 0.02 0.03 0.03 0.05 0.02 0.04 0.04 0.2 1.6 Units fF/(m)2 fF/(m) fF/(m)2 fF/(m)2 fF/(m) fF/(m)2 fF/(m) fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)2 fF/(m)

20%
Comment gate oxide gate-source gate-drain

A/V2 A/V2
V1/2 V1/2 V-1 V-1 V V cm2/(V.s) cm2/(V.s) V/m V/m

0 VE

n p n p n p n p n p

area (Cj) perimeter (CjSW) area (Cj) perimeter (CjSW)

(L10m)

Operating Voltage = 5 Volts ; n-well , p-well processes

area (Cj) perimeter (CjSW)

Sheet & Contact Resistances


diff in well diff poly M1 M2 well M2-M1 M1 - poly M1 - diff substrate 40 80 25 0.005 0.005 5000 1 10 5 25

20%

/sq. /sq. /sq. /sq. /sq. /sq. /via /contact /contact /sq.
2m2m 2m2m 2m2m bulk Si

Maximum current densities


poly M2 M1 M2 - M1 M1 - poly M1 - diff 40 1 1 40 1 1

A/m
mA/m mA/m

A/via
mA/contact mA/contact

2m2m 2m2m 2m2m per bond

bond wire inductance

7.5

nH

18 September 1994
Modified 1/12/08

D. Renshaw
[email protected]:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm

page 3 of 5

University of Edinburgh

EE4
LSI Circuits

Electrical Engineering

SUMMARY OF SPICE SYNTAX & MODELS


Abbreviated List of Syntax
Rxxx n1 n2 Rval <TC=tcval> Cxxx n1 n2 Cval <IC=icval> Lxxx n1 n2 Lval <IC=icval> Vxxx n+ n- <DC=dcval> + <AC=acmag, acphase> Ixxx n+ n- <DC=dcval> +<AC=acmag, acphase> Dxxx n+ n- mname <area> Qxxx nc nb ne ns mname <area> Jxxx nd ng nb mname <area> Mxxx nd ng ns nb mname L=Lval W=wval + <AD=adval> <AS=asval> + <PD=pdval> <PS=psval> Exxx n+ n- <VCVS> cin+ cin- gain Fxxx n+ n- <CCCS> vname gain Gxxx n+ n- <VCCS> cin+ cin- transcon Hxxx n+ n- <CCVS> vname transres .SUBCKT subname n1 <n2 n3 ... > + <param=val1 val2 ... > .ENDS <subname> Xyyy n1 <n2 n3 ... > subname <param=val1 val2 ... > + <M=val> PULSE(v1 v2 td tr pw per) SIN(vo va freq td theta) PWL(t1 v1 <t2 v2 ... >) * comment .ALTER .AC type nopts fstart fstop .DATA dataname pname1 <pname2 ... > .DC srcnam vstart vstop vincr .DEL LIB <filepath>filename entryname .DISTO rload .END .FOUR freq ov1 <ov2 ... > .GLOBAL node1 <node2 ... > .GRAPH .IC V(nodnam1)=val <V(nodnam2)=val ... > .INCLUDE <filepath>filename .LIB <filepath>filename entryname .MEASURE .MODEL mname TYPE <Pname1=pval1 ... > .NOISE outv insrc nums .OP <format> <time> .OPTIONS opt1 <opt2 ... > .PARAM paramnam1=val1 <parmnam2=val2 ... > .PLOT pltype ov1 <ov2 ... > .PRINT prtype ov1 <ov2 ... > .PROBE .SENS ov1 <ov2 ... > .TEMP T1 <T2 <T3 ...>> .TF outvar insrc .TRAN tstep tstopn <tstart <tmax>> <UIC>

SCALE FACTORS: T = 1E12 M = 1E-3 G = 1E9 U = 1E-6 MEG = 1E6 N = 1E-9 K = 1E3 P = 1E-12 MIL = 25.4E-6 F = 1E-15

MOSFET Level 1 Models [ simple instance syntax:


.MODEL NMOSL1 NMOS + LEVEL=1 + TOX=5.0E-8 U0=500 + XJ=0.3U LD=0.3U WD=0.2U + LAMBDA=0.01 GAMMA=0.8 PHI=0.7 VT0=1.0 + CJ=400U CJSW=300P CGDO=300P CGSO=300P RSH=50

Mxx nd ng ns nb model W=xx L=xx ]


.MODEL PMOSL1 PMOS + LEVEL=1 + TOX=5.0E-8 U0=200 + XJ=0.3U LD=0.3U WD=0.2U + LAMBDA=0.02 GAMMA=0.7 PHI=0.6 VT0=-1.0 + CJ=400U CJSW=300P CGDO=300P CGSO=300P RSH=100

18 September 1994
Modified 1/12/08

D. Renshaw
[email protected]:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm

page 4 of 5

University of Edinburgh

EE4
LSI Circuits

Electrical Engineering

18 September 1994
Modified 1/12/08

D. Renshaw
[email protected]:\D430dar2oo8-9\ee3\Part2\src\MOSData-2.fm

page 5 of 5

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