2N6344, 2N6349

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Blocking Voltage to 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in all Four Quadrants For 400 Hz Operation, Consult Factory Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating * Peak Repetitive OffState Voltage(1) (TJ = 40 to +110C, Sine Wave 50 to 60 Hz, Gate Open) 2N6344 2N6349 *OnState RMS Current (TC = +80C) Full Cycle Sine Wave 50 to 60 Hz (TC = +90C) *Peak NonRepetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25C) Preceded and followed by rated current Circuit Fusing Consideration (t = 8.3 ms) *Peak Gate Power (TC = +80C, Pulse Width = 2 s) *Average Gate Power (TC = +80C, t = 8.3 ms) *Peak Gate Current (TC = +80C, Pulse Width = 2.0 s) *Peak Gate Voltage (TC = +80C, Pulse Width = 2.0 s) *Operating Junction Temperature Range *Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 8.0 4.0 ITSM 100 Amps Amps Value Unit Volts 1

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TRIACS 8 AMPERES RMS 600 thru 800 VOLTS

MT2 G MT1

TO220AB CASE 221A STYLE 4

PIN ASSIGNMENT
1 I2t PGM PG(AV) IGM VGM TJ Tstg 40 20 0.5 2.0 10 40 to +125 40 to +150 A2s Watts Watt 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2

ORDERING INFORMATION
Amps Volts C C
Preferred devices are recommended choices for future use and best overall value.

Device 2N6344 2N6349

Package TO220AB TO220AB

Shipping 500/Box 500/Box

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 1999

March, 2000 Rev. 1

Publication Order Number: 2N6344/D

2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic *Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC TL Max 2.2 260 Unit C/W C

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
* Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 100C IDRM, IRRM 10 2.0 A mA

ON CHARACTERISTICS
* Peak OnState Voltage (ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle

"

p2%)

VTM IGT

1.3

1.55

Volts mA

Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) *MT2(+), G(+); MT2(), G() TC = 40C *MT2(+), G(); MT2(), G(+) TC = 40C Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) *MT2(+), G(+); MT2(), G() TC = 40C *MT2(+), G(); MT2(), G(+) TC = 40C Gate NonTrigger Voltage (Continuous dc) (VD = Rated VDRM, RL = 10 k Ohms, TJ = 100C) *MT2(+), G(+); MT2(), G(); MT2(+), G(); MT2(), G() * Holding Current (VD = 12 Vdc, Gate Open) (Initiating Current = 200 mA)

VGT VGD 0.2 TC = 25C *TC = 40C IH tgt

12 12 20 35

50 75 50 75 100 125 Volts

0.9 0.9 1.1 1.4

2.0 2.5 2.0 2.5 2.5 3.0 Volts

6.0 1.5

mA 40 75 2.0 s

"

* Turn-On Time (VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 80C) *Indicates JEDEC Registered Data. dv/dt(c) 5.0 V/s

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2N6344, 2N6349
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current Quadrant 1 MainTerminal 2 +

Symbol
VDRM IDRM VRRM IRRM VTM IH

Parameter
Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 IRRM at VRRM on state

VTM IH

off state

+ Voltage IDRM at VDRM

Quadrant Definitions for a Triac

MT2 POSITIVE (Positive Half Cycle) +

(+) MT2

(+) MT2

Quadrant II

() IGT GATE MT1 REF

(+) IGT GATE MT1 REF

Quadrant I

IGT () MT2 () MT2

+ IGT

Quadrant III

() IGT GATE MT1 REF

(+) IGT GATE MT1 REF

Quadrant IV

MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used.

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2N6344, 2N6349
100 60 90 92 84 80 = CONDUCTION ANGLE dc 120 180 88 PAV , AVERAGE POWER (WATTS) = 30 TC , CASE TEMPERATURE ( C) 96 10 8.0 = CONDUCTION ANGLE 60 TJ 100C 30 90 dc = 180 120

6.0

4.0

2.0

0 0 1.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT, (AMP) 2.0 7.0 8.0

1.0

5.0 2.0 3.0 4.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP)

7.0

8.0

Figure 1. RMS Current Derating

Figure 2. OnState Power Dissipation

1.8 Vgt , GATE TRIGGER VOLTAGE (VOLTS) 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 0.6 0.4 60 40 20 1 QUADRANTS 2 3 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 I GT , GATE TRIGGER CURRENT (mA) OFF-STATE VOLTAGE = 12 V

50 OFF-STATE VOLTAGE = 12 V 30 20

10 7.0

QUADRANT

1 2 3 4

5.0 60

40

20

0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C)

120 140

Figure 3. Typical Gate Trigger Voltage

Figure 4. Typical Gate Trigger Current

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2N6344, 2N6349
100 I H , HOLDING CURRENT (mA) 70 50 30 20 i TM , INSTANTANEOUS ON-STATE CURRENT (AMP) TJ = 100C 10 7.0 5.0 3.0 2.0 100 1.0 0.7 0.5 0.3 0.2 I TSM , PEAK SURGE CURRENT (AMP) 80 25C 20 GATE OPEN MAIN TERMINAL #1 POSITIVE

10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 60

40

20

0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C)

120

140

Figure 6. Typical Holding Current

60 CYCLE TJ = 100C f = 60 Hz Surge is preceded and followed by rated current 1.0 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10

40

20 0

0.1 0.4

0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

4.4

Figure 5. OnState Characteristics

Figure 7. Maximum NonRepetitive Surge Current

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 0.5

0.2 0.1 0.05

ZJC(t) = r(t) RJC

0.02 0.01 0.1

0.2

0.5

1.0

2.0

5.0

20 50 t,TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 8. Typical Thermal Response

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2N6344, 2N6349
PACKAGE DIMENSIONS

TO220AB CASE 221A07 ISSUE Z

T B F C

SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04

Q
1 2 3

A U K

H Z L V G D N J R

STYLE 4: PIN 1. 2. 3. 4.

MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2

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2N6344, 2N6349

Notes

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2N6344/D