2PG009 AED Discon

IGBT
Publication date: February 2009 SJN00007AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).
2PG009
Silicon N-channel enhancement IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: V
CE(sat)
< 2.5 V
High-speed switching:

t
f
= 185 ns (typ.)
Absolute Maximum Ratings T
C
= 25C
Parameter Symbol Rating Unit
Collector-emitter voltage (E-B short) V
CES
510 V
Gate-emitter voltage (E-B short) V
GES
30 to +35 V
Collector current I
C
40 A
Peak collector current
*
I
CP
230 A
Power dissipation P
C
40 W
T
a
= 25C 2.0 W
Junction temperature T
j
150 C
Storage temperature T
stg
55 to +150 C
Note)
*
: Assurance of repetitive pulse. (Repetitive period 5 ms on-duty 20%)
But, it must stay within 40% of all that the time impressed pulse repetitively.
T
5.0
s, On-duty
20%
Electrical Characteristics T
C
= 25C3C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (E-B short) V
CES
I
C
= 1 mA, V
GE
= 0 510 V
Collector-emitter cutoff current (E-B short)
*
I
CES
V
CE
= 408 V, V
GE
= 0 5.0 mA
Gate-emitter cutoff current (E-B short) I
GES
V
GE
= 35 V, 30 V, V
CE
= 0 1.0 mA
Gate-emitter threshold voltage V
GE(th)
V
CE
= 10 V, I
C
= 1.0 mA 3.0 5.5 V
Collector-emitter saturation voltage V
CE(sat)
V
GE
= 15 V, I
C
= 40 A 1.95 2.5 V
Collector-emitter reverse break down voltage V
CE
I
C
= 100 mA, V
GE
= 15 V 18 22.5 V
Short-circuit input capacitance (Common emitter) C
ies
V
CE
= 25 V, V
GE
= 0, f = 1 MHz
1210 pF
Short-circuit output capacitance (Common emitter) C
oes
125 pF
Reverse transfer capacitance (Common emitter) C
res
21 pF
Gate charge load Q
g
V
CC
= 250 V, I
C
= 40 A, V
GE
= 15 V
51 nC
Gate-emitter charge Q
ge
9 nC
Gate-collector charge Q
gc
20 nC
Turn-on delay time t
d(on)
V
CC
= 250 V, I
C
= 40 A,
RL 6.25 , V
GE
= 15 V
75 ns
Rise time t
r
610 ns
Turn-off delay time t
d(off)
200 ns
Fall time t
f
185 300 ns
Thermal resistance (ch-c) R
th(ch-c)
3.13 C/W
Thermal resistance (ch-a) R
th(j-a)
63 C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
TO-220D-A1
Marking Symbol: 2PG009
Pin Name
1. Gate
2. Collector
3. Emitter
Internal Connection
G
C
E
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2PG009
2 SJN00007AED
P
C
T
a
Safe operation area
10
2
10
3
10
1
10
2
1
10
2PG009_I
C
-V
CE
C
o
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c
t
o
r

c
u
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n
t

I
C

(
A
)
Collector-emitter voltage V
CE
(V)
10
1
10 1 10
2
10
3
Non repetitive pulse
T
C
= 25C
I
CP
t = 10 ms 1 s 100 s 1 ms
I
C
DC

0 50 150 100
0
80
100
40
20
60
T
C
= T
a
Without a heat shink
2PG009_P
C
-T
a
P
o
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d
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P
C

(
W
)
Ambient temperature T
a
(C)
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2PG009
SJN00007AED 3
TO-220D-A1 Unit: mm
5.08 0.50
S
o
l
d
e
r
D
i
p
9.9 0.3
1
5
.
0

0
.
5
1
3
.
7

0
.
2
1.4 0.2
1.6 0.2
0.8 0.1
3.2 0.1
0.55 0.15
1 2 3
3
.
0

0
.
5
4
.
2

0
.
2
4.6 0.2
2.9 0.2
2.6 0.1
2.54 0.30
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
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IGBT

Publication date: February 2009 SJN00007AED 1

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