Ex 2,3

EXPERIMENT-2
DATE-17st Jan 2014
CHARACTERISTICS OF P-N DIODE

AIM - To simulate the for
ar! an! re"erse #hara#teristi#s of P-N !io!e
APPARATUS REQUIRED$R%AD P&PI%E %APT'RE (
PROCEDURE1. Open ORCAD- Capture 2. Create a project and give new project name 3. Select analog or mixed A/D mode and create a lan! project ". Select #$lace part%-and add nece&&ar' loc!&. (. Select #$lace )round% *. Connect all t+e placed part& u&ing wire&. ,. Create -ew Simulation $ro.ile under /$Spice0 and edit parameter& 1. Add /2oltage/level mar!er0 3+ere voltage needed to e mar!ed. 4. 5+en clic! /Run $Spice0
THEORYP-N junction diode hen t o !ifferent la)ers P*t)+e an! N*t)+e are ,oine! an! +resse! to-ether (this is sometimes called as hermetic sealing of PN layers) a PN ,un#tion !io!e is forme!( The ,oint of P . N la)ers is #alle! ,un#tion( /hen the ,un#tion is forme!0 some of the ele#trons near the surfa#e of N*la)er #ross the ,un#tion an! o##u+) holes in P*la)er( &ome of the atoms in N*la)er loose their ele#trons an! the) 1e#ome 2"e ions( At the same time0 some of the atoms a##e+t these ele#trons0 so the) 1e#ome *"e ions( In this a)0 o++osite t)+es of ions are a##umulate! near the e!-e of ,un#tion( No these ions o++ose the +ro#ess further an! it sto+s( This o++osin- for#e of ions along the junction is #alle! as +otential 1arrier an! this area of ions
is #alle! as !e+letion la)er( To o"er#ome (i.e. to jump across) this 1arrier an! +ass the ele#trons throu-h it the potentia o! "atte#$ %u&t "e ' ()*+ !o# an$ Si icon diode) The t o terminals from P an! N la)ers are #alle! ano!e an! #atho!e Concept o! "ia&in, 1iasin- means to #onne#t D% "olta-e 31atter)4 a#ross the PN ,un#tion( No hen 1atter) is #onne#te! there ill 1e t o #on!itions in PN ,un#tion * If ano!e is 2"e an! #atho!e is *"e0 then #urrent flo s throu-h the PN ,un#tion( This is #alle! as for ar! 1iasin-( In this #on!ition0 the ma,orit) #har-e #arriers ill 1e e5#han-e! 1et een P an! N la)ers throu-h the ,un#tion( If ano!e is *"e an! #atho!e is 2"e0 practically no #urrent flo s throu-h PN ,un#tion (in all normal conditions. This is #alle! as re"erse 1iasin-( In this #on!ition0 practically ma,orit) #har-e #arriers 1et een P an! N la)ers are not e5#han-e! throu-h the ,un#tion( Fo#-a#d . #e/e#&e "ia&in, o! diode Fo#-a#d 0ia&in, in this metho!0 ano!e is #onne#te! to +ositi"e an! #atho!e is #onne#te! to ne-ati"e terminals of 1atter)(
CIRCUIT DIA1RAM
P-N DIODE 2FOR3ARD 0IAS4
R 2 1k
P-N DIODE 2RE+ERSE 0IAS4

R 2 1k
V1 0Vdc
D 1 D 1N 4002
V1 20Vdc
D 1 D 1N 4002
SIMU5ATION 1RAPHS FOR3ARD CHARACTERISTICS OF P-N DIODE
RE+ERSE CHARACTERISTICS OF P-N DIODE
RESU5T
Thus0 the for ar! an! re"erse #hara#teristi#s of P-N !io!e an! 6ener !io!e $R%AD P&PI%E( ere stu!ie! usin-
EXPERIMENT-7
DATE-28st Jan 2017
CHARACTERISTICS OF 6ENER DIODE

AIM - To simulate the for
ar! an! re"erse #hara#teristi#s of 9ener !io!e
APPARATUS REQUIRED$R%AD P&PI%E %APT'RE (
PROCEDURE1. Open ORCAD- Capture 2. Create a project and give new project name 3. Select analog or mixed A/D mode and create a lan! project ". Select #$lace part%-and add nece&&ar' loc!&. (. Select #$lace )round% *. Connect all t+e placed part& u&ing wire&. ,. Create -ew Simulation $ro.ile under /$Spice0 and edit parameter& 1. Add /2oltage/level mar!er0 3+ere voltage needed to e mar!ed. 4. 5+en clic! /Run $Spice0
T7eo#$8
The 6ene# diode is li:e a -eneral-+ur+ose si-nal !io!e #onsistin- of a sili#on PN ,un#tion( /hen 1iase! in the for ar! !ire#tion it 1eha"es ,ust li:e a normal si-nal !io!e +assin- the rate! #urrent0 1ut as soon as a re"erse "olta-e a++lie! a#ross the 9ener !io!e e5#ee!s the rate! "olta-e of the !e"i#e0 the !io!es 1rea:!o n "olta-e ;< is rea#he! at hi#h +oint a +ro#ess #alle! Avalanche Breakdown o##urs in the semi#on!u#tor !e+letion la)er an! a #urrent starts to flo throu-h the !io!e to limit this in#rease in "olta-e( The #urrent no flo in- throu-h the 9ener !io!e in#reases !ramati#all) to the ma5imum #ir#uit "alue 3 hi#h is usuall) limite! 1) a series resistor4 an! on#e a#hie"e! this re"erse saturation #urrent remains fairl) #onstant o"er a i!e ran-e of a++lie! "olta-es( This 1rea:!o n "olta-e +oint0 ;< is #alle! the =9ener "olta-e= for 9ener !io!es an! #an ran-e from less than one "olt to hun!re!s of "olts( The +oint at hi#h the 9ener "olta-e tri--ers the #urrent to flo throu-h the !io!e #an 1e "er) a##uratel) #ontrolle!
3to less than 1> toleran#e4 in the !o+in- sta-e of the !io!es semi#on!u#tor #onstru#tion -i"inthe !io!e a s+e#ifi# zener reakdown voltage0 3 ;9 4 for e5am+le0 4(7; or 7(?;( This 9ener 1rea:!o n "olta-e on the I-; #ur"e is almost a "erti#al strai-ht line(
6ENER DIODE 2FOR3ARD 0IAS4 0IAS4
6ENER DIODE 2RE+ERSE
R 2 1k
R 2 1k
D 2 D 1N 750
V 1 0V dc
V1 15Vdc
D 2 D 1N 750
SIMU5ATION 1RAPHS FOR3ARD CHARACTERISTICS OF 6ENER DIODE
RE+ERSE CHARACTERISTICS OF 6ENER DIODE
RESU5T
Thus0 the for ar! an! re"erse #hara#teristi#s of 6ener !io!e P&PI%E( ere stu!ie! usin- $R%AD

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EXPERIMENT-2

DATE-17st Jan 2014

CHARACTERISTICS OF P-N DIODE

APPARATUS REQUIRED$R%AD P&PI%E %APT'RE (

P-N DIODE 2RE+ERSE 0IAS4

SIMU5ATION 1RAPHS FOR3ARD CHARACTERISTICS OF P-N DIODE

RE+ERSE CHARACTERISTICS OF P-N DIODE

CHARACTERISTICS OF 6ENER DIODE

APPARATUS REQUIRED$R%AD P&PI%E %APT'RE (

6ENER DIODE 2FOR3ARD 0IAS4 0IAS4

6ENER DIODE 2RE+ERSE

SIMU5ATION 1RAPHS FOR3ARD CHARACTERISTICS OF 6ENER DIODE

RE+ERSE CHARACTERISTICS OF 6ENER DIODE

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