EE210: Microelectronics-I
Lecture-27 : MOSFET-1
B. Mazhari Dept. of EE, IIT Kanpur
B. Mazhari, IITK 1G-Number
Transistor
IO + VIN + Vo -
C Current t IO is i much h more sensitive iti t to VIN than th VO
I O I O Vin Vo
Field Effect Principle -2V
I O I O Vin Vo
5V
- - - - - - - - - -- - - - - - +
+ +
+ +
+ +
+ +
+ +
+ +
+ +
N-Type
Modulation of conductivity using electric field Transconductance
N-Type yp
Oxide
N-Type
Transistors
Transistor
BipolarJunction Transistor(BJT)
FieldEffectTransistor (FET)
MetalOxidesemiconductor fieldeffecttransistor (MOSFET)
Depletion-Mode Transistor
1V -1V
Gate Drain
Oxide
Source
0V
5V
n+
N-type
n+
p type p-type
0V
Body
In a depletion-mode p transistor, a channel exists without any y gate g voltage g being g applied and current flows when drain voltage is applied. Negative gate voltage is applied to deplete the channel of carriers and cause current to reduce.
Channel exists at zero gate voltage and is depleted by gate voltage -1V -3V
Gate
-2V
Source
Drain
Oxide
n+
n+
p-type Body
Channel is completely pinched off and current ~zero
NMOS Enhancement mode transistor: Inversion Mode
Transistor
G
Metal /Poly /Poly-Si Si SiO2
Al
N
+
Al
N
+
P-Silicon
Gate S Source
0V
Drain
5V
Oxide
n+
n+
p-type
0V
Body
No channel exists when gate voltage is zero and current is zero as well. ll
0.2V 0 2V Gate Source + + + + + + + + + + + 0V
Oxide
Drain +5V 5V
+ n+ + + + p-type + +
+ + + +
0V
+ + + +
+ n+ + + + + +
Body
Depletion Region is formed near the Si/SiO2 interface
0.4V 0 4V Gate Source + + + + + + + + + + + 0V
Oxide
Drain +5V 5V
- n+ + + + + + + p-type + +
Depletion width increases
- n+ + + + + + + + + +
Body
0V
n p n
2 i
But something interesting happens: electron density at the surface also increases
At a sufficiently large voltage (>VTHN) a channel of electrons forms at the Si/SiO2 interface.
Gate Source + + + + + + + + + + + + + +
Oxide
Drain
n+
------------------
n+
p-type Body
Depletion charge Sheet of electrons (inversion layer)
Conductivity modulation at the surface?
MOS capacitor constitutes the heart of a MOSFET
VG Gate
Oxide
+ + + + + + p-type +
p N A 10 cm
16 3
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
Body
ni2 n 104 cm 3 NA
Field Effect
ns ps n 10 cm
2 1 20
VG
0V
VT
Ps: 10 10
4
16
15
10 10
10
10 10
10 10
ns: 10 10
10
12
16
Inverted Surface P-Type Intrinsic Surface N-Type
10 Strong . Inversion
17
Surface carrier density can be changed from P-type to N-type
Surface Carrier Density
ps ns
NA
ps
ni ns VGB VT
Flat band condition
VG VFB
VG Gate
Whenever two different material are brought into contact contact, an internal potential difference develops like in a pn j junction. ti Th Thus even when no gate voltage is applied, there is a voltage across the mos capacitor.
Oxide
+ + + + + + + + + p-type + +
+ + + +
+ + + +
+ + + +
+ + + +
Body
VG = VFB ; Flat Flat-band band condition meaning no NET voltage across the capacitor. Uniform hole density everywhere
Depletion
VG VFB but VG VTHN
Gate
Oxide
+ + + + + + + + + + p-type + + + +
Body
Holes are depleted from the surface
+ + + + + +
Depletion region
pS pB
Although n S nB electron density is also very small
Strong Inversion
VG VTHN
Gate
Oxide
------------------------ + + + + + + + p-type + + + + + +
Body
Electrons are accumulated at the surface
Depletion region
nS N A
Accumulation
VG VFB
Gate
Oxide
++ + ++ + + + + + + + p-type + +
+ + + + +
+ + + +
++ + + + +
+ + + +
extra holes
Body
Holes are accumulated at the surface
pS pB
MetalOxideSemiconductorFieldEffectTransistor:
MOSFET
Depletion Mode
Enhancement Mode
N-Channel
P-Channel N-Channel
P-Channel
D G B
D B
B S
G S
Simplified Symbols and structure
D D
NMOS
S/B
Gate Source
Oxide
D i Drain
Body Source
Gate
Oxide
Drain
n+
n+
p+
n+
n+
p-type Body
p-type
Simplified Symbols and structure
Gate Source
D D
Drain
Oxide
B PMOS S
p+ p
p+ p
S/B
n-type n type Body
Gate Body n+ Source
Oxide
Drain
p+ p n-type yp
p+ p
G B p+ S D n+ B n+ S
G
Oxide
D p+ n-type
n+
p+
p-type
Body potential of NMOS transistors is same and is normally connected to the most negative voltage in the circuit to ensure that VBS < 0 and thus body-source PN junction is reverse biased. Each E h PMOS can b be f fabricated bi di in a separate i individual di id l N N-well ll and d thus h each pmos body terminal can have a distinct voltage. Normally body and source terminals of PMOS are shorted together.
G B p+ S
Oxide
G D n+ B p+ S
Oxide
D n+
n+
n+
p-type
Two NMOS side-by-side
G B n+ S
O id Oxide
G D p+ B n+ S
O id Oxide
D p+ n-type
p+
p+
Two PMOS side-by-side side by side in different n n-wells wells
p-type
