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    AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor

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    dreyes3773
    The document provides information on the AO4800 dual N-channel enhancement mode field effect transistor (MOSFET). Key details include: - It uses advanced trench technology to provide excellent RDS(ON) and low gate charge for use in buck converters. - Electrical characteristics include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and static drain-source on-resistance below 27mΩ at 10V gate voltage. - It comes in an 8-pin SOIC package and is available on tape and reel for surface mount applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    dreyes3773
    45 views6 pages
    The document provides information on the AO4800 dual N-channel enhancement mode field effect transistor (MOSFET). Key details include: - It uses advanced trench technology to provide excellent RDS(ON) and low gate charge for use in buck converters. - Electrical characteristics include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and static drain-source on-resistance below 27mΩ at 10V gate voltage. - It comes in an 8-pin SOIC package and is available on tape and reel for surface mount applications.

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    AO4800

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    © Attribution Non-Commercial (BY-NC)

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    The document provides information on the AO4800 dual N-channel enhancement mode field effect transistor (MOSFET). Key details include: - It uses advanced trench technology to provide excellent RDS(ON) and low gate charge for use in buck converters. - Electrical characteristics include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and static drain-source on-resistance below 27mΩ at 10V gate voltage. - It comes in an 8-pin SOIC package and is available on tape and reel for surface mount applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    45 views6 pages

    AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor

    Uploaded by

    dreyes3773
    The document provides information on the AO4800 dual N-channel enhancement mode field effect transistor (MOSFET). Key details include: - It uses advanced trench technology to provide excellent RDS(ON) and low gate charge for use in buck converters. - Electrical characteristics include a maximum drain-source voltage of 30V, continuous drain current of 6.9A, and static drain-source on-resistance below 27mΩ at 10V gate voltage. - It comes in an 8-pin SOIC package and is available on tape and reel for surface mount applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    July 2001

    AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor


    General Description
    The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

    Features
    VDS (V) = 30V ID = 6.9A RDS(ON) < 27m (VGS = 10V) RDS(ON) < 32m (VGS = 4.5V) RDS(ON) < 50m (VGS = 2.5V)

    D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1

    D2

    G1 S1

    G2 S2

    SOIC-8

    Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C A Current TA=70C ID Pulsed Drain Current
    B

    Maximum 30 12 6.9 5.8 40 2 1.44 -55 to 150

    Units V V A

    IDM PD TJ, TSTG

    TA=25C TA=70C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

    W C

    Symbol t 10s Steady-State Steady-State RJA RJL

    Typ 48 74 35

    Max 62.5 110 40

    Units C/W C/W C/W

    Alpha & Omega Semiconductor, Ltd.

    AO4800

    Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A VGS=2.5V, ID=5A 12 0.7 25 1 22.6 33 27 42 16 0.71 Min 30 1 5 100 1.4 27 40 32 50 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC

    gFS VSD IS

    Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current

    1 3

    DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time Qrr Body Diode Reverse Recovery charge

    VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz

    858 110 80 1.24 9.6 1.65 3 5.7 13 37 4.2 15.5 7.9

    VGS=4.5V, VDS=15V, ID=6.9A

    VGS=10V, VDS=15V, RL=2.2, RGEN=6 IF=5A, dI/dt=100A/s IF=5A, dI/dt=100A/s

    A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.

    Alpha & Omega Semiconductor, Ltd.

    AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

    30 25 20 ID (A) 15 10 5 0 0

    10V

    20 3V 4.5V 2.5V ID(A) 16 12 8 VGS=2V 4 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 VDS (Volts) Fig 1: On-Region Characteristics VGS (Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V

    60 50 RDS(ON) (m ) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V VGS=2.5V Normalized On-Resistance

    1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=2.5V

    ID=5A
    VGS=4.5V VGS=10V

    VGS=10V

    70 60 RDS(ON) (m ) 50 40 30 20 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C

    1.0E+01

    ID=5A
    IS Amps

    1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.00

    125C

    25C

    0.25

    0.50

    0.75

    1.00

    1.25

    1.50

    VSD (Volts) Figure 6: Body diode characteristics

    Alpha & Omega Semiconductor, Ltd.

    AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge characteristics 1500 VDS=15V ID=6.9A Capacitance (pF) 1250 1000 750 500 250 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss f=1MHz VGS=0V

    100.0 RDS(ON) limited 10.0 ID (Amps) 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 TJ(Max)=150C TA=25C 100 s Power W

    40 TJ(Max)=150C TA=25C 30

    20

    10

    0 0.001

    0.01

    0.1

    10

    100

    1000

    Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

    10 Z JA Normalized Transient Thermal Resistance

    D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W

    In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

    0.1

    PD Ton

    Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1

    T 100 1000

    10

    Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

    Alpha & Omega Semiconductor, Ltd.

    ALPHA & OMEGA


    SEMICONDUCTOR, INC.

    SO-8 Package Data

    DIMENSIONS IN MILLIMETERS SYMBOLS

    DIMENSIONS IN INCHES

    A A1 A2 b c D E1 e E h L aaa

    MIN 1.45 0.00 0.33 0.19 4.80 3.80 5.80 0.25 0.40 0

    NOM 1.50 1.45 1.27 BSC

    MAX 1.55 0.10 0.51 0.25 5.00 4.00 6.20 0.50 1.27 0.10 8

    MIN 0.057 0.000 0.013 0.007 0.189 0.150 0.228 0.010 0.016 0

    NOM 0.059 0.057 0.050 BSC

    MAX 0.061 0.004 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8

    NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE

    PACKAGE MARKING DESCRIPTION

    RECOMMENDED LAND PATTERN

    NOTE: LG PARTN F A Y W LN

    - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE

    SO-8 PART NO. CODE


    UNIT: mm

    PART NO. AO4400 AO4401

    CODE 4400 4401

    PART NO. AO4800 AO4801

    CODE 4800 4801

    PART NO. AO4700 AO4701

    CODE 4700 4701

    ALPHA & OMEGA


    SEMICONDUCTOR, INC.
    SO-8 Carrier Tape

    SO-8 Tape and Reel Data

    SO-8 Reel

    SO-8 Tape
    Leader / Trailer & Orientation

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